APT8056BVFR
800V
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
0.560Ω
16A
TO-247
• 100% Avalanche Tested
D
FREDFET
• Lower Leakage
• Popular TO-247 Package
G
• Faster Switching
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8056BVFR
UNIT
800
Volts
Drain-Source Voltage
16
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
370
Watts
Linear Derating Factor
2.96
W/°C
VGSM
PD
TJ,TSTG
64
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
16
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
Volts
16
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.56
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1-2005
BVDSS
Characteristic / Test Conditions
050-5593 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8056BVFR
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
3700
4440
Coss
Output Capacitance
VDS = 25V
370
515
Crss
Reverse Transfer Capacitance
f = 1 MHz
180
270
Qg
Total Gate Charge
VGS = 10V
185
275
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
Qgd
Gate-Drain ("Miller") Charge
ID = ID [Cont.] @ 25°C
16
90
24
135
VGS = 15V
12
24
t d(on)
3
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
10
20
ID = ID [Cont.] @ 25°C
50
75
RG = 1.6Ω
10
20
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
dv/
MIN
16
Continuous Source Current (Body Diode)
Peak Diode Recovery
dt
1
2
dv/
64
(Body Diode)
dt
UNIT
Amps
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
5
18
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
400
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
0.8
Tj = 125°C
2.9
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
18
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
TYP
MAX
0.34
40
VR = 200V.
D=0.5
0.05
0.1
0.05
0.01
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5593 Rev C
1-2005
0.4
0.2
0.01
0.005
0.001
10-5
t1
t2
SINGLE PULSE
10-4
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 10.16mH, R = 25Ω, Peak I = 16A
j
G
L
5 I - -I [Cont.], di/ = 100A/µs, V
S
D
DD - VDSS, Tj - 150°C, RG = 2.0Ω,
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT8056BVFR
VGS=6.5V, 7V, 10V & 15V
30
VGS=6.5V, 7V, 10V & 15V
6V
25
20
5.5V
15
10
5V
5
ID, DRAIN CURRENT (AMPERES)
6V
25
20
5.5V
15
10
5V
5
4.5V
4.5V
0
0
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
32
24
16
TJ = +125°C
8
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
16
12
8
4
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.2
1.1
VGS=10V
VGS=20V
1.0
0.9
0
6
12
18
24
30
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
1.3
1.1
1.0
0.9
0.8
1-2005
ID, DRAIN CURRENT (AMPERES)
40
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
100
200
300
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5593 Rev C
ID, DRAIN CURRENT (AMPERES)
30
APT8056BVFR
15,000
10µS
50
10,000
100µS
OPERATION HERE
LIMITED BY RDS (ON)
10
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
1mS
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.5
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
D
VDS=100V
VDS=250V
12
VDS=400V
8
4
0
Coss
100
I = I [Cont.]
16
1,000
Crss
1
5 10
50 100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Ciss
DC
0.1
20
5,000
0
50 100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.2 0.4
0.6 0.8
1.0 1.2
1.4
1.6
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
050-5593 Rev C
1-2005
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.