BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com Specification Features • • • • • • • 3 Cathode 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 X 20 s) Pb−Free Package is Available 1 Anode 3 SOT−23 CASE 318 STYLE 8 1 2 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM 260°C for 10 Seconds xxxM POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 xxx = Specific Device Code M = Date Code MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 s (Note 1) @ TL ≤ 25°C Ppk 225 Watts Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C PD Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C RJA 225 1.8 mW mW/°C 556 °C/W ORDERING INFORMATION Device Package Shipping† BZX84CxxxET1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel BZX84CxxxET1G BZX84CxxxET3 PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 3 1 Publication Order Number: BZX84C2V4ET1/D BZX84C2V4ET1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) IF Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ C I VZ VR V IR VF IZT Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (V) @ IZT1 = 5 mA (Note 4) Device Marking Min Nom Max ZZT1 () @ IZT1 = 5 mA BZX84C3V3ET1 BA4 3.1 3.3 3.5 BZX84C4V7ET1 BA9 4.4 4.7 5 BZX84C5V1ET1 BB1 4.8 5.1 BZX84C5V6ET1 BB2 5.2 BZX84C6V2ET1, G* BB3 5.8 BZX84C6V8ET1 BB4 BZX84C7V5ET1 BB5 BZX84C10ET1 BB8 BZX84C12ET1 BZX84C15ET1 VZ2 (V) @ IZT2 = 1 mA (Note 4) Min Max ZZT2 () @ IZT2 = 1 mA 95 2.3 2.9 80 3.7 4.7 5.4 60 4.2 5.6 6 40 6.2 6.6 10 6.4 6.8 7.2 7 7.5 7.9 9.4 10 BC1 11.4 BC3 14.3 BZX84C16ET1 BC4 BZX84C18ET1 BC5 BZX84C24ET1 BC8 Device Max Reverse Leakage Current VZ C (pF) (mV/k) @ @ IZT1=5 mA VR = 0 f= Min Max 1 MHz Min Max ZZT3 () @ IZT3= 20 mA 600 3.6 4.2 40 5 1 −3.5 0 450 500 4.5 5.4 15 3 2 −3.5 0.2 260 5.3 480 5 5.9 15 2 2 −2.7 1.2 225 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 VZ1 Below @ IZT1 = 2 mA Device Marking Min Nom Max BZX84C27ET1 BC9 25.1 27 28.9 BZX84C43ET1 BK6 40 43 46 Device VZ3 (V) @ IZT3=20 mA (Note 4) ZZT1 Below @ IZT1 = 2 mA VZ2 Below @ IZT2 = 0.1 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA 80 25 28.9 150 39.7 46 VZ3 Below @ IZT3 = 10 m A Min Max ZZT3 Below @ IZT3 = 10 mA 300 25.2 29.3 375 40.1 46.5 * The “G” suffix indicates Pb−Free package available. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C http://onsemi.com 2 V IR @ R A (V) Max Reverse Leakage Current VZ (mV/k) Below @ IZT1 = 2 mA V IR @ R A (V) Min Max C (pF) @ VR =0 f= 1 MHz 45 0.05 18.9 21.4 25.3 70 80 0.05 30.1 37.6 46.6 40 BZX84C2V4ET1 Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 TYPICAL TC VALUES VZ @ IZT 10 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 255C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 3 1.1 1.2 BZX84C2V4ET1 Series TYPICAL CHARACTERISTICS 1000 1000 0 V BIAS I R , LEAKAGE CURRENT (µA) TA = 25°C C, CAPACITANCE (pF) 1 V BIAS 100 BIAS AT 50% OF VZ NOM 1 10 1 +150°C 0.1 0.01 10 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 5. Typical Capacitance 100 I Z, ZENER CURRENT (mA) TA = 25°C 10 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 1 0.1 0.01 12 10 TA = 25°C 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 s tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tP 20 10 0 0 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) 80 Figure 6. Typical Leakage Current 100 0.01 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 20 40 60 t, TIME (s) Figure 9. 8 × 20 s Pulse Waveform http://onsemi.com 4 80 90 BZX84C2V4ET1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−09 ISSUE AJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 BZX84C2V4ET1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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