APT30M70BVR
48A 0.070Ω
300V
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
TO-247
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M70BVR
UNIT
300
Volts
Drain-Source Voltage
48
Continuous Drain Current @ T C = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ T C = 25°C
370
Watts
Linear Derating Factor
2.96
W/°C
VGSM
PD
TJ,TSTG
192
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
48
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (V GS = 0V, I D = 250µA)
300
Volts
48
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.] )
MAX
0.070
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (V GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V DS = VGS , ID = 1.0mA)
UNIT
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-802 8
FAX: (541) 388-036 4
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5502 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M70BVR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
4890
5870
Coss
Output Capacitance
VDS = 25V
882
1235
Reverse Transfer Capacitance
f = 1 MHz
277
415
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
152
225
VDD = 0.5 VDSS
35
52
ID = ID[Cont.] @ 25°C
66
99
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
14
28
VDD = 0.5 VDSS
21
42
ID = ID[Cont.] @ 25°C
57
85
RG = 1.6Ω
10
20
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
ISM
VSD
MIN
48
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
192
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.] )
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs)
440
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
5.8
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
TYP
MAX
0.34
40
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.13mH, R = 25Ω, Peak I = 48A
j
G
L
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5502 Rev C
0.4
0.01
0.005
t2
SINGLE PULSE
0.001
10-5
t1
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT30M70BVR
100
100
VGS =15V
6V
80
5.5V
60
40
5V
20
4.5V
I , DRAIN CURRENT (AMPERES)
D
V GS=10V
80
60
5.5V
40
5V
20
4.5V
4V
4V
0
0
T J = +125°C
V DS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ < 0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
T J = +25°C
T J = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
40
30
20
DSS
10
0
BV
I , DRAIN CURRENT (AMPERES)
D
50
DS
TJ = +25°C
80
R
I , DRAIN CURRENT (AMPERES)
D
TJ = -55°C
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
30
60
90
120
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
DS
25
1.3
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.2
1.1
V GS=10V
VGS=20V
1.0
0.9
0
20
40
60
80
100
ID , DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.20
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
T J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
-50
1.2
ID = 0.5 I D [Cont.]
V GS = 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
T C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
6V
VGS=7V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
T C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5502 Rev C
I , DRAIN CURRENT (AMPERES)
D
VGS =7V, 10V & 15V
APT30M70BVR
200
OPERATION HERE
LIMITED BY R DS (ON)
15,000
100µS
10,000
Ciss
50
C, CAPACITANCE (pF)
ID , DRAIN CURRENT (AMPERES)
100
10µS
1mS
10
5
10mS
1
100mS
DC
T C =+25°C
T J =+150°C
SINGLE PULSE
.5
.1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1,000
C rss
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
ID = ID [Cont.]
VDS =60V
VDS =150V
12
V DS=240V
8
4
0
Coss
100
1
5
10
50 100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
5,000
0
50
100
150
200
250
300
Qg , TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
T J =+150°C
50
TJ =+25°C
10
5
1
.5
.1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
050-5502 Rev C
2.21 (.087)
2.59 (.102)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058