FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). • –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ V GS = –4.5 V RDS(ON) = 0.057 Ω @ V GS = –2.5 V. Applications • ESD protection diode (note 3). • Load switch • High performance trench technology for extremely low RDS(ON) . • Extended V GSS range (±12V) for battery applications. • Motor drive • DC/DC conversion • Low profile TSSOP-8 package. • Power management G2 S2 S2 D2 G1 S1 S1 D1 TSSOP-8 1 8 2 7 3 6 4 5 Pin 1 Absolute Maximum Ratings Symbol T A=25oC unless otherwise noted Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed PD Units –20 V ±12 V –4.4 A –30 Power Dissipation for Single Operation TJ , TSTG Ratings (Note 1a) 1.0 (Note 1b) 0.6 W -55 to +150 °C (Note 1a) 125 °C/W (Note 1b) 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2502PZ FDW2502PZ 13’’ 12mm 3000 units 2000 Fairchild Semiconductor Corporation FDW2502PZ Rev. B (W) FDW2502PZ March 2000 PRELIMINARY Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient V GS = 0 V, ID = –250 µA Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = –12 V, V DS = 0 V –10 µA IGSSR Gate–Body Leakage, Reverse V GS = 12 V V DS = 0 V 10 µA –1.5 V On Characteristics –20 ID = –250 µA, Referenced to 25°C V mV/°C –17 (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) gFS V DS = V GS , ID = –250 µA –0.4 -1.0 ID = –250 µA, Referenced to 25°C 3.1 0.028 0.039 0.043 On–State Drain Current V GS = –4.5 V, ID = –4.4 A V GS = –4.5 V, ID = –4.4 ,TJ =125°C V GS = –2.5 V, ID = –3.3 A V GS = –4.5 V, V DS = –5 V Forward Transconductance V DS = –5 V, ID = –4.4 A V DS = –10 V, f = 1.0 MHz V GS = 0 V, V DD = –10 V, V GS = –4.5 V, ID = –1 A, RGEN = 6 Ω mV/°C 0.035 0.056 0.057 –30 Ω A 17 S 1330 pF 552 pF 153 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf (Note 2) 12 25 ns 19 40 ns 60 100 ns Turn–Off Fall Time 37 70 ns Qg Total Gate Charge 14 20 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –5 V, V GS = –4.5 V ID = –4.4 A, 3.0 nC 3.9 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –0.83 A Voltage V SD (Note 2) -0.7 –0.83 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while Rθ CA is determined by the user's board design. a) RθJA is 125°/W (steady state) when mounted on 1 inch² copper pad on FR-4. b) RθJA is 250°/W (steady state) when mounted on minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDW2502PZ Rev. B (W) FDW2502PZ Electrical Characteristics FDW2502PZ Typical Characteristics 2 30 -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE – ID , DRAIN CURRENT (A) V GS = -4.5V -3.0V -4.0V 20 -2.5V 10 -2.0V 1.8 V GS = -2.5V 1.6 -3.0V 1.4 -3.5V 1.2 -4.0V 1 -4.5V 0.8 0 0 1 2 0 3 5 10 Figure 1. On-Region Characteristics. 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. ID = -4.4A V GS = - 4.5V ID = -4.4 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 0.12 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.1 0.08 0.06 T A = 125o C 0.04 TA = 25o C 0.02 0 150 1 2 T J, JUNCTION TEMPERATURE ( oC) 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55o C V DS = - 5V 25o C -IS, REVERSE DRAIN CURRENT (A) 30 25 -ID, DRAIN CURRENT (A) 15 -ID , DRAIN CURRENT (A) – V DS, DRAIN-SOURCE VOLTAGE (V) 125o 20 15 10 5 TA = 125o C V GS = 0V 10 1 0.1 25o C 0.01 -55o C 0.001 0.0001 0 0 1 2 3 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2502PZ Rev. B (W) FDW2502PZ Typical Characteristics 2100 VDS = - 5V ID = - 4.4A f = 1MHz V GS = 0 V 1800 4 -10V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 –15V 3 2 CISS 1500 1200 900 COSS 600 1 300 0 CRSS 0 0 3 6 9 12 15 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 P(pk), PEAK TRANSIENT POWER (W) 20 100µ s 1ms 10ms RDS(ON) LIMIT ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 10 100ms 1s 1 10s DC V GS = -4.5V SINGLE PULSE R θJA = 250o C/W 0.1 TA = 25 oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 250°C/W T A = 25°C 15 10 5 0 0.01 100 0.1 V DS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) + RθJA R θJA = 250 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 T J - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDW2502PZ Rev. B (W) TSSOP-8 Package Dimensions TSSOP-8 (FS PKG Code S4) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in millimeters Part Weight per unit (gram): 0.0334 January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D