TriQuint AGR21125EF 125 w, 2.110 ghz-2.170 ghz, n-channel e-mode, lateral mosfet Datasheet

AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
Table 1. Thermal Characteristics
The AGR21125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access
(W-CDMA), single and multicarrier class AB wireless
base station power amplifier applications.
Parameter
Thermal Resistance,
Junction to Case:
AGR21125EU
AGR21125EF
Sym
Value
Unit
Rı JC
Rı JC
0.5
0.5
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
7
AGR21125EU (unflanged)
48
5
AGR21125EF (flanged)
Figure 1. Available Packages
Features
Typical performance for two carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1 – 10 MHz and
F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 28 W.
— Power gain: 14 dB.
— Efficiency: 27%.
— IM3: –34.5 dBc.
— ACPR: –38 dBc.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 125 W continuous wave (CW) output power.
Large signal impedance parameters available.
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C:
AGR21125EU
AGR21125EF
Derate Above 25 ˇC:
AGR21125EU
AGR21125EF
Operating Junction Temperature
Storage Temperature Range
Sym Value Unit
VDSS
65
Vdc
VGS –0.5, +15 Vdc
PD
PD
350
350
W
W
—
—
TJ
2.0
2.0
200
W/°C
W/°C
°C
TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T C = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
V(BR)DSS
IGSS
IDSS
65
—
—
—
—
—
—
4
200
12
Vdc
µAdc
µAdc
GFS
—
—
—
—
9
—
3.8
0.08
—
4.8
—
—
S
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
CRSS
—
3.0
—
pF
12
14
—
dB
—
–34.5
–33
dBc
ACPR
—
–38
–37
dBc
IRL
—
–10
–9
dB
Off Characteristics
200 µA)
Drain-source Breakdown Voltage (VGS = 0, ID = 400
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
Gate Threshold Voltage (VDS = 10 V, ID = 400 µA)
Gate Quiescent Voltage (VDS = 28 V, ID = 1200 mA)
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VGS(TH)
VGS(Q)
VDS(ON)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2140.0 MHz)
Output Mismatch Stress
(VDD = 28 V, POUT = 125 W (CW), IDQ = 1200 mA, fC = 2140.0 MHz
VSWR = 10:1; [all phase angles])
GPS
η
IM3
P1dB
ψ
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135.0 MHz, and f2 = 2145 MHz.
VDD = 28 Vdc, IDQ = 1200 mA, and POUT = 28 W avg.
25
115
27
125
—
—
%
W
No degradation in output power.
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21125E
FB1
VGG R1
VDD
R3
+
R2
C2
+
+
C3
C12D C9D C8D C6A C7A C8A C9A C10A C11A C12A C13A C14A C15A
C4
C5
Z6
Z7
Z1
C1
Z2
+
Z3
Z4
2
Z5
RF INPUT
Z8
Z9
Z10
Z11
Z12
C16
Z14
C18
1
DUT
3
Z13
RF
OUTPUT
VDD
+
+
C12C C9C C8C C6B C7B C8B C9B C10B C11B C12B C13B C14B C15B
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
2
■
■
■
■
3
1
Parts List:
■ Microstrip Line:
Z1 0.785 in. x 0.065 in.
Z2 0.205 in. x 0.065 in.
Z3 0.070 in. x 0.255 in.
Z4 0.315 in. x 0.065 in.
Z5 0.240 in. x 0.860 in.
Z6 0.050 in. x 0.467 in.
Z7 0.050 in. x 0.367 in.
Z8 0.500 in. x 1.050 in.
Z9 0.248 in. x 0.185 in.
Z10 0.075 in. x 0.320 in.
Z11 0.465 in. x 0.115 in.
Z12 0.075 in. x 0.065 in.
Z13 0.252 in. x 0.065 in.
Z14 0.050 in. x 0.367 in.
■ WB1, WB2; 10 mil thick, 0.6 in. x 0.18 in.
®
■ Fair-Rite ferrite bead: FB1 2743019447.
®
■ Vitramon 1206 size chip capacitor:
C3, C9A, C9B, C9C, C9D 22000 pF.
■ 1206 size chip capacitor: 22000 pF
C12A, C12B, C12C, C12D, C13A, C13B.
■ 1206 size chip resistor:
R1 1 kΩ;
R2 560 kΩ;
R3 4.7 Ω.
®
■ Taconic ORCER RF-35 board material,
2 oz. copper, 30 mil thickness, εr = 3.5.
ATC® chip capacitor: C1 10 pF 100B100JW500X; C5, C14A, C14B, C15A, C15B 5.6 pF100B5R6BW500X;
C6A, C6B 6.8 pF 100B6R8JW500X; C7A, C7B 1.2 pF 100B1R2BW500X; C16 15 pF 100B150JW500X.
Murata® 0805 size chip capacitor: C8A, C8B, C8C, C8D 0.01 µF GRM40X7R103K100AL.
Sprague® tantalum surface-mount chip capacitor: C2, C4, C10A, C10B, C11A, C11B 22 µF, T491, 35 V.
Johanson Giga-Trim® variable capacitor: C18 0.6 pF to 4.5 pF 27271SL.
B. Component Layout
Figure 2. AGR21125E Test Circuit
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
U CT
8
0.6
20
f1
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.2
0.1
0.2
0.3
0.1
0.2
20
0.4
0.1
)
/ Yo
(-jB
CE
1.
0
R
0
5
0.14
-80
0.36
0.11
-100
-90
0.13
0.1
9
0.0
-70
40
-1
0.
5
0.
07
30
-1
43
0.
8
0.0
2
0.4
.41
0
0.4
0.39
0.38
F
0.37
0.12
0.
2.
1.8
1.6
1.4
1.0
0.9
1.2
0.15
0.35
-110
0
-12
(-j
06
Z
X/
0.7
0
-4
-4
4
-70
0
6
-5
5
-3
0.1
0.3
0.8
3
-60
5
0.3
7
-5
0.1
VE
-60
32
CA P
AC
I TI
T
5
,O
o)
0.2
-30
CE
CO
M
0.6
18
0.
RE
AC
TA
N
EN
-65
0.
PO
N
4
0
-5
-25
31
0.
19
0.
4
0.
0.4
0.0
0.6
0
3.
-20
-75
IN
DU
IV
CT
0.8
5
0.4
4.0
-85
AN
PT
CE
US
ES
0
1.
-15
0.3
0
ZS
0.2
8
0.2
f1
f3
-4
4
0.
0.2
2
0.3
0.2
9
0.2
1
-30
6
0.4
4
0.0
0
-15 -80
8
0.
5.0
0.2
-10
0.48
10
0.6
-20
D L OA D <
OW A R
7
HST
0.4
N GT
-170
EL E
V
WA
<Ð
-90
-160
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.49
10
0.4
90
IN D
0.
f3 ZL
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 10 Ω
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
± 180
170
Typical Performance Characteristics
MHz (f )
2110 (f1)
2140 (f2)
2170 (f3)
ZL Ω
ZS Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
3.8 – j8.7
1.4 + j0.7
3.4 – j8.2
1.4 + j0.8
3.3 – j7.7
1.3 + j0.9
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
15.00
IDQ = 1600 mA
POWER GAIN (dB) S
14.50
IDQ = 1400 mA
14.00
13.50
13.00
IDQ = 1200 mA
12.50
IDQ = 1000 mA
12.00
IDQ = 800 mA
11.50
11.00
1
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
TWO-TONE
MEASUREMENT
10 MHz TONE
SPACING
10
100
1000
OUTPUT POWER (W) PEP
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
-20.00
IMD3, THIRD ORDER (dBc) s
-25.00
-30.00
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
IDQ = 800 mA
-35.00
IDQ = 1000 mA
-40.00
IDQ = 1600 mA
TWO-TONE
MEASUREMENT
-45.00
-50.00
10 MHz TONE
SPACING
-55.00
IDQ = 1200 mA
-60.00
-65.00
-70.00
1
10
IDQ = 1400 mA
100
OUTPUT POWER (W) PEP
Figure 5. IMD3 vs. Output Power and IDQ
1000
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
0
-5
-10
-15
IMD (dBc)
-20
-25
IM3
-30
IM5
-35
-40
IM7
VDD = 28 V, POUT = 130 W PEP, FO = 2140 MHz
-45
-50
-55
-60
0.1
1
10
100
TWO-TONE SPACING (MHz)
Figure 6. IMD vs. Tone Spacing
20
50
45
18
40
DRAIN EFF
35
16
25
GAIN (dB)S
14
20
GAIN
12
15
10
2 CARRIER W-CDMA 3 GPP,
PEAK TO AVG. = 8.5 dB @ 0.01% CCDF,
10 MHz SPACING 3.84 MHz CBW, POUT = 28 W,
VDD = 28 V, IDQ = 1200 mA
10
8
5
0
-5
-10
-15
6
-20
-25
4
2
0
-30
IMD3
-35
-40
ACPR
15
20
25
30
35
OUTPUT POWER (WATTS-AVERAGE)S
Figure 7. Gain, Efficiency, IMD3, and ACPR vs. Output Power
-45
40
-50
EFF (%), IMD3 (dBc), ACPR (dBc)S
30
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
20
18
EFF
16
GAIN
GAIN (dB)S
14
2 CARRIER W-CDMA 3 GPP,
PEAK TO AVG. = 8.5 dB @ 0.01% CCDF,
10 MHz SPACING, 3.84 MHz CBW, POUT = 28 W,
VDD = 28 V, IDQ = 1200 mA
12
10
8
RL
6
4
IMD3
2
ACPR
0
2100
2110
2120
2130
2140
2150
2160
2170
50
45
40
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
2180
FREQUENCY (MHz)S
Figure 8. Broadband Performance
20
10
F1
0
F2
-10
-20
-30
IMD3
IMD3
-40
-50
-60
-70
-80
ACPR
ACPR
2 CARRIER W-CDMA 3GPP, PEAK-TO-AVG = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW, POUT = 28 W,
VDD = 28 V, IDQ = 1200 mA
Carrier 2.1625 GHz
5 MHz
Figure 9. Spectral Plot
Span 50 MHz
EFF (%), RL (dB), IMD3 (dBc), ACPR (dBc)S
Typical Performance Characteristics (continued)
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
14
POWER GAIN (dB)
4
AM-AM
(POWER GAIN [dB])
2
0
-2
13.5
13
-6
-8
VDD = 28 Vdc
FO = 2140 MHz
IDQ = 1200 mA
CW INPUT
12.5
12
-4
AM-PM
(PHASE [DEGREES])
0
10
20
-10
-12
-14
30
40
INPUT POWER PIN (dBm)
Figure 10. AM-AM and AM-PM Characteristics
50
-16
PHASE (DEGREES)
14.5
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain.
AGR21125EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
PEAK DEVICES
M-AGR21125U
AGR21125XU
YYWWUR
XXXXX
YYWWUR
ZZZZZZZ
1
3
3
ZZZZZZZ
2
2
AGR21125EF
1
AGERE
PEAK DEVICES
M-AGR21125F
AGR21125XF
YYWWUR
YYWWUR XXXXX
ZZZZZZZ
ZZZZZZZ
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
3
2
3
2
Label Notes:
■ M before the part number denotes model program. X before the part number denotes engineering prototype.
■
■
■
■
The last two letters of the part number denote wafer technology and package type.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.