Transistors SMD Type NPN Transistors BC849W ~ BC850W (KC849W ~ KC850W) ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● Complements to BC859W/BC860W C 1.Base 2.Emitter 3.Collector B E ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Symbol BC849W BC850W BC849W BC850W VCBO VCEO Rating Unit 30 50 30 V 45 VEBO 5 Collector Current - Continuous IC 100 Collector Current - Pulsed ICP 200 Base Current - Pulsed IBP 200 Collector Power Dissipation PC 200 mW RθJA 625 ℃/W TJ 150 Tstg -65 to 150 Emitter - Base Voltage Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature Range mA ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BC849W ~ BC850W (KC849W ~ KC850W) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current BC849W ICBO Collector-base cut-off current BC850W Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage VBE BC849BW,BC850BW DC current gain 30 BC850W 50 BC849W 30 BC850W 45 VCB= 50 V , IE= 0 0.1 VCB= 50 V , IE= 0 ,TJ = 150℃ 0.5 VEB= 5V , IC=0 0.1 IC=10 mA, IB=0.5mA 250 IC=100 mA, IB=5mA (Note.1) 600 IC=100 mA, IB=5mA (Note.1) 1.2 Emitter output capacitance Coe VEB= 0.5V, IC=ic=0,f=1MHz 700 770 200 450 420 800 3 11 IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz 4 IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 4 VCE= 5V, IC= 10mA,f=1MHz Note.1: Pulse test: tp ≤ 300 μs; δ ≤ 0.02. ■ Marking NO BC849BW BC849CW BC850BW BC850CW Range 200-450 420-800 200-450 420-800 Marking 2B* 2C* 2F* 2G* www.kexin.com.cn 580 VCE= 5V, IC= 10 mA VCB= 10V, IE=ie=0,f=1MHz fT 5 0.5 VCE= 5V, IC= 2 mA Unit V VCB= 30 V , IE= 0 ,TJ = 150℃ Cob Transition frequency Max 0.1 Collector output capacitance NF Typ VCB= 30 V , IE= 0 VCE= 5V, IC= 2mA Noise Figure 2 BC849W hFE BC849CW,BC850CW Min uA mV V mV pF dB 100 MHz Transistors SMD Type NPN Transistors BC849W ~ BC850W (KC849W ~ KC850W) ■ Typical Characterisitics 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 102 IC (mA) 103 BC849BW; BC850BW. Fig.1 DC current gain; typical values. 600 VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 BC849CW; BC850CW. Fig.2 DC current gain; typical values. www.kexin.com.cn 3