BAS70TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 (SC70-6L) 4 FEATURES 5 6 Maximum forward voltage @ 1.0mA of 0.41V 3 Maximum leakage current @ 50V of 100nA 2 1 Reverse voltage rating of 70V In compliance with EU RoHS 2002/95/EC directives SOT- 363 APPLICATIONS Rail-to-rail ESD protection Various Configurations (See Diagrams Below) Overshoot and undershoot switching control Mobile phones and accessories Video game consoles connector ports BAS70TW BAS70ADW BAS70CDW Isolated Triple Common Anode Common Cathode 6 5 4 1 2 3 6 5 4 1 2 3 Marking Code: 70A Marking Code: 70T 6 5 4 1 2 3 BAS70SDW Series 6 5 4 1 2 3 Marking Code: 70S Marking Code: 70C MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted Rating Symbol Value VRRM 70 V Continuous Reverse Voltage VR 70 V Continuous Forward Current IF 200 mA Non-repetitive Peak Forward Current, t = 1sec, Square Wave I FSM 0.6 A Total Power Dissipation (Note 1) P tot 225 mW Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range8 Tstg -55 to +125 °C Repetitive Peak Reverse Voltage Units Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient 9/1/2009 Symbol Value Units R thja 556 °C/W Page 1 www.panjit.com BAS70TW/ADW/CDW/SDW ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted Parameter Breakdown Voltage (Note 1) Symbol Conditions Min Typ Max Units V BR I BR = 100 uA 70 - - V I F = 1.0 mA - - 0.41 I F = 10 mA - - 0.75 I F = 15 mA - - 1.0 VF Forward Voltage (Note 1) V Reverse Leakage Current (Note 1) IR V R = 50 V - - 100 nA Junction Capacitance CD 0Vdc Bias, f =1 MHz - 1.25 2.0 pF Reverse Recovery Time (See Figure 1) t rr I F = 10mA, I R= 10mA R L= 100 Ohms; measured at IRrec = 1mA - - 5 ns Note 1: Short duration (<300us) test pulse to minimize self heating 820 Ω +10 V 2 .0 k Ω 100 µH 0 .1 µ F 0 .1 µ F IF ? DUT 5 0 Ω O u tp u t P u ls e G e n e ra to r 5 0 Ω In p u t S a m p li n g O s c il lo s c o p e Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT 9/1/2009 Page 2 www.panjit.com BAS70TW/ADW/CDW/SDW TYPICAL CHARACTERISTIC CURVES (Per Diode) 100 100 o 10 Revers e Curren t,I R ( m A) Forward Current,I F (mA) T J =125 C T J =75 oC o T J =25 C 1 T J =-40 oC 10 T J =125 oC 1 T J =75 oC 0.1 0.01 T J =25 oC 0.001 0.1 0 0.2 0.4 0.6 0.8 1.0 0 20 Forward Voltage,V F (V) 40 60 80 Reverse Voltage,V R (V) Fig.2 Typical Forward Characteristics Fig.3 Typical Reverse Characteristics 1.4 Capacitance,C(pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 Reverse Voltage,V R (V) Fig.4 Typical Reverse Characteristics 9/1/2009 Page 3 www.panjit.com BAS70TW/ADW/CDW/SDW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BAS70xxx T/R7 - 7" reel, 3K units per reel BAS70xxx T/R13 - 13" reel, 10K units per reel Copyright PanJit International, Inc 2009 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 9/1/2009 Page 4 www.panjit.com