DCR3990A52 Phase Control Thyristor DS5940-2 April 2013 (LN30254) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 3990A 53400A 2000V/µs 400A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR3990A52* DCR3990A50 DCR3990A45 Repetitive Peak Voltages VDRM and VRRM V 5200 5000 4500 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. o o *5000V @ -40 C, 5200V @ 0 C Outline type code: A (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3990A52 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 3990 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 6270 A Continuous (direct) on-state current - 5640 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 53.4 kA VR = 0 14.25 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00603 °C/W Single side cooled Anode DC - 0.01024 °C/W Cathode DC - 0.01467 °C/W Double side - 0.001 °C/W - 0.002 °C/W - 125 °C Clamping force 83.0kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 74.0 91.0 kN 2/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 300 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 2000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 400 A/µs Gate source 30V, 10, Non-repetitive - 1000 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 1000 to 2600A at Tcase = 125°C - 0.85 V Threshold voltage – High level 2600 to 9000A at Tcase = 125°C - 0.99 V On-state slope resistance – Low level 1000 to 2600A at Tcase = 125°C - 0.2115 m On-state slope resistance – High level 2600 to 9000A at Tcase = 125°C - 0.1578 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 750 µs 4030 5420 µC 49 59 A Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 3000A, Tj = 125°C, dI/dt – 1A/µs, VRpeak ~3100V, VR ~ 2100V IRR Reverse recovery current IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 400 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES 9000 min @ 125ºC max @ 125ºC max @ 25ºC min @ 25ºC Instantaneous on-staate current,TI- (A) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 0.5 1 1.5 2 2.5 Instantaneous on-state voltage , VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.061592 B = 0.115333 C = 0.000119 D = 0.002394 these values are valid for Tj = 125°C for IT 250A to 9000A 4/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR 130 12 180 120 90 60 30 Maximum case temperature, Tcase ( o C ) Mean power dissipation - (kW) 10 180 120 90 60 30 120 8 6 4 2 110 100 90 80 70 60 50 40 30 20 10 0 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 180 120 90 60 30 100 75 50 25 16 Mean power dissipation - (kW) T - ( ° C) Maximum heatsink temperature,Heatsink 125 d.c. 180 120 90 60 30 14 12 10 8 6 4 2 0 0 0 0 1000 2000 3000 4000 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR 125 100 75 50 d.c. 180 120 90 60 30 25 T -(o C) Maximum heatsink temperature heatsink T -(° C) Maximum permissible case temperature ,case 125 100 75 50 d.c. 180 120 90 60 30 25 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 3500 4000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled Anode side cooled Cathode side cooled Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) Ri (°C/kW) Ti (s) 1 3.01541 2 3 4 1.048955 0.983519 0.983519 0.703874 1.904794 0.059 0.059 3.156003 4.092806 1.556555 1.623962 2.69023 13.79162 0.059 0.205916 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119 0.08069 i 4 Zth [Ri (1 exp(T / Ti )] i 1 Rth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Zth (z) ° sine. rect. 180 0.44 0.31 120 0.49 0.43 90 0.55 0.49 60 0.60 0.55 30 0.64 0.61 15 0.66 0.64 Anode Side Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.61 0.58 15 0.62 0.61 Cathode Sided Cooling Zth (z) ° sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.60 0.58 15 0.62 0.60 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR 10 140 28 130 26 120 24 110 22 100 20 ITSM 90 18 80 16 I2t 70 14 60 12 50 10 Conditions: Tcase= 125°C VR = 0 half-sine wave 40 30 20 8 6 4 10 2 0 1 1 10 1 100 I2t (MA2s) Conditions: Tcase = 125°C VR =0 Pulse width = 10ms Surge current, ITSM - (kA) Surge current, TI SM- (kA) 100 0 100 10 Pulse width, tP - (ms) Number of cycles Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 600 25000 Qsmax = 5413.5*(di/dt)0.4762 IRRmax = 58.296*(di/dt)0.7559 500 I - (A) Reverse recovery current,RR Stored Charge, Qs - (uC) 20000 15000 Qsmin = 4030.8*(di/dt)0.5002 10000 Conditions: Tj= 125ºC VRpeak ~ 3100V VRM ~ 2100V snubber as appropriate to control reverse voltage 5000 400 300 IRRmin = 49.567*(di/dt)0.7701 200 Conditions : Tj = 125ºC VRpeak ~ 3100V VRM ~ 2100V snubber as appropriate to control reverse voltage 100 0 0 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Device 22CT93A 28CT93A 42CT93A DCR3990A52 DCR3220A65 DCR2560A85 Maximum Minimum Thickness Thickness (mm) (mm) 35.165 34.555 35.24 34.63 35.47 34.86 35.61 35 35.85 35.24 36.19 35.58 Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A Fig.16 Package outline 9/10 www.dynexsemi.com DCR3990A52 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Provisional Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Some initial development work has been performed. The datasheet represents a view of the end product based on very limited information. Certain details will change. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Dynex Semiconductor Ltd. CUSTOMER SERVICE Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Technical Documentation – Not for resale. 10/10 www.dynexsemi.com