AVD002F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG(B) A The ASI AVD002F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System E F G H I MAXIMUM RATINGS 250 mA IC VCC 37 V PDISS 10 W @ TC ≤ 100 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 10 °C/W CHARACTERISTICS K DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 H .003 / 0.08 .007 / 0.18 I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 MAXIMUM .255 / 6.48 .285 / 7.24 G .210 / 5.33 K ORDER CODE: ASI10552 TC = 25 °C NONETEST CONDITIONS SYMBOL J BVCBO IC = 1 mA BVCER IC = 5 mA BVEBO IE = 1 mA ICES VCE = 35 V hFE VCE = 5.0 V PG ηC VCC = 35 V RBE = 10 Ω IC = 100 mA POUT = 2 W MINIMUM TYPICAL MAXIMUM V 45 V 3.5 V 30 f = 1025 - 1150 MHz UNITS 45 9.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 300 --dB % REV. B 1/1