SILICON BIDIRECTIONAL DIAC DO-35(GLASS) FEATURES The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is within three volts. These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control ,and heat control. DB4 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's ABSOLUTE RATINGS(LIMITING VALUES) PC Power Dissipation on Printed Circuit(L=10mm) TA=50 C ITRM Repetitive Peak on-state Current tp=10µs F=100Hz TSTG /TJ Dimensions in inches and (millimeters) mW 150 2.0 Storage and Operating Junction Temperature 2.0 2.0 -40 to+125/-40 to 110 16 A C ELECTRICAL CHARACTERISTICS VBO I +VBO II - VBO I I+ VI Breakover Voltage (Note 2 ) C=22nF(Note 2) See diagram 1 Min Typ Max Breakover Voltage Symmetry C=22nF(Note 2) See diagram 1 Max I=(IBO to IF=10mA) See Diagram 1 Min Dynamic Breakover Voltage (Note1) 35 40 45 +3 V V V VO Output Voltage (Note 1 ) See Diagram 2 Min 5 V IBO Breakover Current (Note1) C=22nF(Note 2) Max 100 µA See Diagram 3 Typ 1.5 µS VB=0.5 VBO max see diagram 1 Max 10 µA tr IB Rise Time (Note1) Leakage Current (Note1) Notes: 1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices. Wing Shing Computer Components Co., (H.K .)L td. Homepage: http: / / www.wingshing.com Tel: (852)2341 92 7 6 Fax : (852)27 9 7 8153 E-mail: [email protected]