EDZ18B Diodes Zener diode EDZ18B zApplications Constant voltage control zExternal dimensions (Unit : mm) 0.8±0.05 zLand size figure (Unit : mm) 0.12±0.05 0.6 0.8 1.6±0.1 1.2±0.05 1.7 zFeatures 1) 2-pin ultra mini-mold type for high-density mounting (EMD2). 2) High reliability. 3) Can be mounted automatically, using chip mounter. EMD2 zStructure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 Mark EX. EDZ3.6B zConstruction Silicon epitaxial planar zTaping specifications (Unit : mm) 0.2±0.05 2.0±0.05 φ1.5±0.05 1.26±0.05 0 3.5±0.05 0.6 2.45±0.1 1.3±0.06 0 8.0±0.15 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0 4.0±0.1 空ポケット Empty poc ket 2.0±0.05 0.76±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation Junction temperature Storage temperature Operating temperature Symbol P Tj Tstg Topr Limits 150 150 -55 to +150 -55 to +150 Unit mW ℃ ℃ ℃ Rev.C 1/4 EDZ18B Diodes zElectrical characteristics (Ta=25°C) Symbol Zener voltage :Vz(V) TYP. EDZ 3.6B EDZ 3.9B EDZ 4.3B EDZ 4.7B EDZ 5.1B EDZ 5.6B EDZ 6.2B EDZ 6.8B EDZ 7.5B EDZ 8.2B EDZ 9.1B EDZ 10B EDZ 11B EDZ 12B EDZ 13B EDZ 15B EDZ 16B EDZ 18B EDZ 20B EDZ 22B EDZ 24B EDZ 27B EDZ 30B EDZ 33B EDZ 36B MIN. 3.600 3.890 4.170 4.550 4.980 5.490 6.060 6.650 7.280 8.020 8.850 9.770 10.760 11.740 12.910 14.340 15.850 17.560 19.520 21.540 23.720 26.190 29.190 32.150 35.070 MAX. 3.845 4.160 4.430 4.750 5.200 5.730 6.330 6.930 7.600 8.360 9.230 10.210 11.220 12.240 13.490 14.980 16.510 18.350 20.390 22.470 24.780 27.530 30.690 33.790 36.870 Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0 Operating resistance :Zz(Ω) MAX. 100 100 100 100 80 60 60 40 30 30 30 30 30 30 37 42 50 65 85 100 120 150 200 250 300 Iz(mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0 Rising operating resistance :Zz(Ω) Reverse current : IR(uA) MAX. 1000.0 1000.0 1000.0 800.0 500.0 200.0 100.0 60.0 60.0 60.0 60.0 60.0 60.0 80.0 80.0 80.0 80.0 80.0 100.0 100.0 120.0 150.0 200.0 250.0 300.0 MAX. 10.0 5.0 5.0 2.0 2.0 1.0 1.0 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Iz(mA) 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VR(V) 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 zType No. TYPE EDZ 3.6B EDZ 3.9B EDZ 4.3B EDZ 4.7B EDZ 5.1B EDZ 5.6B EDZ 6.2B EDZ 6.8B EDZ 7.5B EDZ 8.2B EDZ 9.1B EDZ 10B EDZ 11B TYPE NO. 62 72 82 92 A2 C2 E2 F2 H2 J2 L2 05 15 TYPE EDZ 12B EDZ 13B EDZ 15B EDZ 16B EDZ 18B EDZ 20B EDZ 22B EDZ 24B EDZ 27B EDZ 30B EDZ 33B EDZ 36B TYPE NO. 25 35 45 55 65 75 85 95 A5 C5 E5 F5 Rev.C 2/4 EDZ18B Diodes zElectrical characteristic curves (Ta=25°C) 10 0.1 4.7 0.01 5.1 4.3 6.2 10 6.8 3.9 11 12 13 7.5 5.6 15 16 3.6 20 18 8.2 9.1 24 22 27 36 33 30 0.001 0 5 10 15 20 25 30 35 40 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 10000 140 REVERSE SURGE MAXIMUM POWER:PRSM(W) POWER DISSIPATION:Pd(mW) 160 PRSM 1000 120 100 80 60 40 20 0 25 50 75 100 125 150 10 1 AMBIENT TEMPERATURE:Ta(℃) Pd-Ta CHARACTERISTICS 0.1 1 10 100 0.08 30 0.06 25 0.04 20 0.02 15 0 10 -0.02 -0.04 5 -0.06 0 -5 -0.08 40 1000 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 35 TEMP.COEFFICIENCE:γz(mV/℃) 40 0.1 10 20 30 ZENER VOLTAGE:Vz(V) γz-Vz CHARACTERISTICS 0.01 TIME:t(ms) PRSM-TIME CHARACTERISTICS 0.12 0 t 100 0.1 0.001 0 TEMP.COEFFICIENCE:γz(%/℃) ZENER CURRENT:Iz(mA) 1 100 Rth(j-c) 10 Mounted on epoxy board IM=10mA IF=100mA 1 1ms time 300us 0.1 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 Rev.C 3/4 EDZ18B Diodes Ta=75℃ Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=125℃ Ta=-25℃ 0.01 0.001 15 16 17 18 19 20 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 21 10 f=1MHz Ta=75℃ Ta=75℃ 1 Ta=25℃ 0.1 Ta=25℃ 0.01 Ta=-25℃ Ta=-25℃ 0.001 10 1 0.0001 0 18.3 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 100 Ta=125 ℃ REVERSE CURRENT:IR(nA) 1 2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 3 4 5 6 7 8 9 10 11 12 13 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 Ta=25℃ REVERSE CURRENT:IR(nA) 18.2 18.1 18 AVE:18.05V 17.9 100 Ta=25℃ VR=13V n=30pcs 0.9 Ta=25℃ IZ=5mA n=30pcs IZ=5mA n=30pcs AVE:9.996V σ:0.0125V 17.8 Vz DISPERSION MAP 0.8 0.7 0.6 0.5 0.4 0.3 AVE:0.0962nA 0.2 80 70 60 50 40 AVE:31.10pF 30 20 0.1 10 0 0 IR DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA) Ta=25℃ ZENER VOLTAGE:Vz(V) Ta=125℃ 100 10 Ct DISPERSION MAP DYNAMIC IMPEDANCE:Zz(Ω) 1000 100 10 1 0.1 1 10 ZENER CURRENT:Iz(mA) Rev.C 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1