ON BC848CPDW1 Dual general purpose transistor Datasheet

BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
Dual General Purpose
Transistors
http://onsemi.com
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
SOT−363
CASE 419B
STYLE 1
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
(3)
(2)
Q1
Q2
(4)
MAXIMUM RATINGS − NPN
Rating
Symbol
Value
Unit
(1)
(5)
(6)
MARKING DIAGRAM
6
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO
Emitter−Base Voltage
VEBO
6.0
V
XX = Device Code
M = Date Code
G = Pb−Free Package
IC
100
mAdc
(Note: Microdot may be in either location)
Symbol
Value
Unit
Collector Current − Continuous
V
65
45
30
XX MG
G
V
80
50
30
MAXIMUM RATINGS − PNP
Rating
ORDERING INFORMATION
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO
Emitter−Base Voltage
VEBO
−5.0
V
IC
−100
mAdc
Collector Current − Continuous
V
−65
−45
−30
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
October, 2013 − Rev. 9
Device
Mark Package
1
Shipping†
BC846BPDW1T1G,
SBC846BPDW1T1G
BB
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SBC846BPDW1T2G
BB
SOT−363
3,000 /
(Pb−Free) Tape & Reel
BC847BPDW1T1G
BF
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SBC847BPDW1T1G
BF
SOT−363
3,000 /
(Pb−Free) Tape & Reel
SBC847BPDW1T3G
BF
SOT−363
10,000 /
(Pb−Free) Tape & Reel
BC847BPDW1T2G
BF
SOT−363
3,000 /
(Pb−Free) Tape & Reel
BC848CPDW1T1G
BL
SOT−363
3,000 /
(Pb−Free) Tape & Reel
V
−80
−50
−30
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
380
250
3.0
mW
mW/°C
mW/°C
RqJA
328
°C/W
TJ, Tstg
−55 to +150
°C
Total Device Dissipation Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
V
65
45
30
−
−
−
−
−
−
V
80
50
30
ICBO
−
−
−
V
80
50
30
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC84B7
BC848C
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
−
−
−
150
270
−
−
200
420
290
520
475
800
−
−
−
−
0.25
0.6
−
−
0.7
0.9
−
−
580
−
660
−
700
770
100
−
−
−
−
4.5
−
−
10
V
V
mV
SMALL− SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
http://onsemi.com
2
MHz
pF
dB
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
V(BR)EBO
V
−65
−45
−30
−
−
−
−
−
−
V
−80
−50
−30
ICBO
−
−
−
V
−80
−50
−30
Collector Cutoff Current
(VCB = −30 V)
(VCB = −30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−15
−4.0
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
(IC = −2.0 mA, VCE = −5.0 V)
BC846B, SBC846B, BC847B, SBC847B
BC848C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
−
−
150
270
−
−
200
420
290
520
475
800
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
100
−
−
−
−
4.5
−
−
10
V
V
V
SMALL− SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
http://onsemi.com
3
MHz
pF
dB
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
0.30
500
VCE = 5 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.05
−55°C
0.0001
25°C
0.5
150°C
0.3
0.1
0.0001
0.001
0.01
0.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
2.0
-1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
1.2
1.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.001
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
0.6
0.2
25°C
Figure 1. DC Current Gain vs. Collector
Current
−55°C
0.4
150°C
0.10
IC, COLLECTOR CURRENT (A)
0.9
0.7
0.15
IC, COLLECTOR CURRENT (A)
IC/IB = 20
0.8
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
-1.4
-1.8
qVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
0.2
Figure 5. Collector Saturation Region
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 6. Base−Emitter Temperature Coefficient
http://onsemi.com
4
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
1.0 2.0
10 20
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 7. Capacitance
Figure 8. Current−Gain − Bandwidth Product
http://onsemi.com
5
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
0.30
500
400
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.20
25°C
0.15
0.10
−55°C
0.05
0.0001
0.1
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
−55°C
IC/IB = 20
25°C
0.6
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
-2.0
-1.0
-1.6
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
Figure 9. DC Current Gain vs. Collector
Current
0.7
-1.2
0.001
IC, COLLECTOR CURRENT (A)
0.8
0.2
150°C
IC, COLLECTOR CURRENT (A)
1.0
0.9
IC/IB = 20
0.25
0
1
VBE(on), BASE−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 5 V
-20
Figure 13. Collector Saturation Region
-1.4
-1.8
qVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 14. Base−Emitter Temperature Coefficient
http://onsemi.com
6
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TJ = 25°C
20
Cib
10
8.0
6.0
Cob
4.0
2.0
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
VCE = -5.0 V
500
200
100
50
20
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
-50 -100
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
http://onsemi.com
7
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
0.30
500
VCE = 5 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.1
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
−55°C
IC/IB = 20
25°C
150°C
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.01
Figure 17. DC Current Gain vs. Collector
Current
0.8
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.001
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.9
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
Figure 21. Collector Saturation Region
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
http://onsemi.com
8
100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 23. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 24. Current−Gain − Bandwidth Product
http://onsemi.com
9
50
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
0.35
150°C
VCE = 5 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
500
400
25°C
300
200
−55°C
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
−55°C
IC/IB = 20
25°C
150°C
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.1
1.2
1.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -20 mA
-0.4
0
0.01
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
0.7
-0.8
0.001
Figure 25. DC Current Gain vs. Collector
Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.8
0.2
0.20
IC, COLLECTOR CURRENT (A)
1.0
0.9
150°C
0.25
0
1
IC/IB = 20
0.30
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
IC = -200 mA
IC = -100 mA
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
Figure 29. Collector Saturation Region
-0.2
-10
-1.0
IC, COLLECTOR CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
http://onsemi.com
10
-100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 31. Capacitances
Figure 32. Current−Gain − Bandwidth Product
http://onsemi.com
11
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
1000
0.30
hFE, DC CURRENT GAIN
900
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 5 V
800 150°C
700
600
25°C
500
400
300 −55°C
200
100
0
0.001
0.01
0.1
−55°C
0.05
0.0001
IC/IB = 20
−55°C
25°C
0.7
150°C
0.6
0.5
0.4
0.3
0.1
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
Figure 36. Base Emitter Voltage vs. Collector
Current
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.01
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
0.8
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.001
Figure 33. DC Current Gain vs. Collector
Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.10
IC, COLLECTOR CURRENT (A)
0.9
0.2
25°C
0.15
IC, COLLECTOR CURRENT (A)
1.1
1.0
150°C
0.20
0
1
IC/IB = 20
0.25
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
Figure 37. Collector Saturation Region
10
1.0
IC, COLLECTOR CURRENT (mA)
Figure 38. Base−Emitter Temperature
Coefficient
http://onsemi.com
12
100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 39. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 40. Current−Gain − Bandwidth Product
http://onsemi.com
13
50
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
1000
0.30
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
150°C
900
hFE, DC CURRENT GAIN
VCE = 5 V
800
700
25°C
600
500
400
−55°C
300
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
−55°C
IC/IB = 20
25°C
150°C
0.5
0.4
0.3
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 43. Base Emitter Saturation Voltage vs.
Collector Current
Figure 44. Base Emitter Voltage vs. Collector
Current
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.1
Figure 42. Collector Emitter Saturation Voltage
vs. Collector Current
0.6
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -20 mA
-0.4
0
0.01
Figure 41. DC Current Gain vs. Collector
Current
0.7
-0.8
0.001
IC, COLLECTOR CURRENT (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
0.8
0.2
150°C
0.20
0
1
1.0
0.9
IC/IB = 20
0.25
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
IC = -200 mA
IC = -100 mA
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
Figure 45. Collector Saturation Region
-0.2
-10
-1.0
IC, COLLECTOR CURRENT (mA)
Figure 46. Base−Emitter Temperature
Coefficient
http://onsemi.com
14
-100
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 47. Capacitances
Figure 48. Current−Gain − Bandwidth Product
http://onsemi.com
15
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
1.0
10
100
1.0k
10k
100k
1.0M
t, TIME (ms)
Figure 49. Thermal Response
The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 50 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure
49. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values
less than the limitations imposed by the secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 50. Active Region Safe Operating Area
http://onsemi.com
16
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
PACKAGE DIMENSIONS
SC−88/SOT−363/SC70−6
CASE 419B−02
ISSUE Y
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
ddd
M
A2
A
ccc C
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
TOP VIEW
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
A1
C
SIDE VIEW
C A-B D
DETAIL A
SEATING
PLANE
END VIEW
c
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
17
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC846BPDW1T1/D