Advanced Monolithic Systems AMS264 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • High Collector-Emitter Breakdown • High Frequency of 1.2GHz at 50mA • Available in TO-220 Package APPLICATIONS 120V Min. • High density Television • Computer Monitors GENERAL DESCRIPTION The AMS264 is an RF type small signal bipolar transistor designed for use in high performance applications such as advanced color CRT monitor drivers that require both high frequency and high voltage. The use of fully ion implanted technology and silicon nitride passivation makes the AMS264 a highly reliable device. For a complimentary NPN transistor in applications where the matching characteristics are important use AMS232. ORDERING INFORMATION: PACKAGE TYPE TO-220 AMS264 OPERATING JUNCTION TEMP. RANGE -40°C to +150°C PIN CONNECTIONS FRONT VIEW 1- Emitter 2- Collector 3- Base 3 2 1 ABSOLUTE MAXIMUM RATINGS (Note 1) Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current 125V 130V 3.5V 250mA Operating Junction Temperature Storage Temperature Power Dissipation @ TC =75°C Thermal Resistance, Junction to Case 150°C -40°C to +150°C 5W 25°C/W Note1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS264 ELECTRICAL CHARACTERISTICS Electrical Characteristics at TC = 25°C, unless otherwise specified Parameter Symbol Conditions AMS264 Typ Min Max Units Off Characteristics Collector - Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 120 V Collector - Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 120 V Emitter - Base Breakdown Voltage V(BR)EBO IE = 100nA, IC = 0 3 V Collector Cutoff Current ICES VCE = 110V, VBE = 0 100 nA HFE IC = 50mA, VCE = 15V Output Capacitance COB VCB = 10V, IE = 0, f = 1MHz 2.8 pF Collector Base Capacitance CCB VCB = 10V, IE = 0, f = 1MHz 2.2 pF Input Capacitance CIB VEB = 3V, f = 1MHz 5.8 pF On Characteristics DC Current Gain 30 - Dynamic Characteristics Transistor Frequency fT VCE = 15V, IC = 50mA 1.2 GHz TYPICAL PERFORMANCE CHARACTERISTICS Gain Bandwidth Product vs Collector Current Input Capacitance vs Voltage Junction Capacitance vs Voltage 1200 8 16 1000 800 600 400 f =250MHz VCE = 25V 4 C OB C CB 2 12 8 C IB 4 0 0 0 15 30 45 60 75 90 105 120 135 150 COLLECTOR CURRENT (mA) Advanced Monolithic Systems, Inc. 6 CAPACITANCE (pF) 20 CAPACITANCE (pF) 10 GAIN BANDWIDTH PRODUCT (MHz) 1400 0 3 6 9 12 15 18 21 24 27 30 COLLECTOR BASE VOLTAGE (V) 0 1 2 3 4 5 EMITTER BASE VOLTAGE (V) 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS264 PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted. 3 LEAD TO-220 PLASTIC PACKAGE (T) 0.147-0.155 (3.734-3.937) DIA 0.390-0.415 (9.906-10.541) 0.165-0.180 (4.191-4.572) 0.045-0.055 (1.143-1.397) 0.230-0.270 (5.842-6.858) 0.570-0.620 (14.478-15.748) 0.460-0.500 (11.684-12.700) 0.330-0.370 (8.382-9.398) 0.980-1.070 (24.892-27.178) 0.218-0.252 (5.537-6.401) 0.520-0.570 (13.208-14.478) 0.090-0.110 (2.286-2.794) 0.028-0.038 (0.711-0.965) 0.050 (1.270) TYP 0.013-0.023 (0.330-0.584) 0.095-0.115 (2.413-2.921) T (TO-220) AMS DRW# 042193 Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140