Kexin BAW56S High-speed double diode array Datasheet

Diodes
SMD Type
High-Speed Double Diode Array
BAW56S
SOT-363
Unit: mm
+0.1
1.3-0.1
0.65
0.525
Features
+0.15
2.3-0.15
+0.1
1.25-0.1
Small plastic SMD package
0.36
High switching speed: max. 4 ns
Continuous reverse voltage:max. 75 V
+0.05
0.95-0.05
Repetitive peak forward current:max. 450 mA.
+0.05
0.1-0.02
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
Repetitive peak reverse voltage:max. 85 V
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Max
Unit
85
V
Per diode
repetitive peak forward current
continuous reverse voltage
continuous forward current
repetitive peak forward current
VRRM
75
V
single diode loaded;
250
mA
all diodes loaded;
100
mA
450
mA
VR
IF
IFRM
square wave; Tj = 25
non-repetitive peak forward current
IFSM
prior to surge;
s
4
t = 1 ms
1
t=1
t=1s
0.5
Ts = 60 ; note 1
350
total power dissipation
Ptot
storage temperature
Tstg
-65
+150
Tj
-65
+150
junction temperature
thermal resistance from junction to ambient
Rth j-a
255
A
mW
K/W
Note
1. One or more diodes loaded.
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1
Diodes
SMD Type
BAW56S
Electrical Characteristics Ta = 25
Parameter
Symbol
forward voltage
Conditions
VF
reverse current
t rr
Marking
Marking
2
A1t
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V fr
I F = 50 mA
1
I F = 150 mA
1.25
V R = 25 V
30
mV
nA
1
A
V R = 25 V; T j = 150
A
V R = 75 V; T j = 150
50
A
V R = 0; f = 1 MHz;
when switched from I F = 10 mA to I R = 10 mA;
R L = 100
forward recovery voltage
715
855
Unit
30
Cd
reverse recovery time
I F = 1 mA
I F = 10 mA
V R = 75 V
IR
diode capacitance
Max
2
pF
4
ns
1.75
V
; measured at I R = 1 mA;
when switched from I F = 10 mA; t r = 20 ns
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