Central CS55DZ Silicon controlled rectifier Datasheet

DATA SHEET
CS55BZ
CS55DZ
SILICON CONTROLLED RECTIFIER
0.8 AMPS, 200 AND 400 VOLTS
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed
for applications requiring extremely low gate sensitivity.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=60oC)
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
CS55BZ
VDRM,VRRM
IT(RMS)
ITSM
I2t
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
PGM
PG(AV)
Peak Gate Current (tp=10µs)
IGM
VGM
Tstg
TJ
Peak Gate Voltage (tp=10µs)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
CS55DZ
200
UNITS
400
V
0.8
10
A
A
A2s
0.24
2.0
0.1
W
W
1.0
A
8.0
-40 to +125
-40 to +125
ΘJA
ΘJC
V
°C
°C
200
°C/W
100
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IDRM,IRRM
IDRM,IRRM
Rated VDRM,VRRM, RGK=1KΩ
IGT
IH
VGT
VTM
VD=12V
RGK=1KΩ
VD=12V
ITM=1.0A
dv/dt
VD=.67 x VDRM, RGK=1KΩ, TC=125°C
MIN
TYP
MAX
UNITS
µA
1.00
Rated VDRM,VRRM, RGK=1KΩ, TC=125°C
µA
100
25
20
µA
5.00
0.8
1.70
mA
V
V
V/µs
(SEE REVERSE SIDE)
R1
CS55BZ / CS55DZ
SILICON CONTROLLED RECTIFIER
RMS ON-STATE CURRENT vs. CASE
TEMPERATURE
MAXIMUM ON-STATE
CHARACTERISTICS
2
0.8
ITM, ON-STATE CURRENT (A)
IT (RMS), RMS ON-STATE CURRENT (A)
1
0.6
0.4
0.2
0
1.5
1
TC=125°C
0.5
TC=25°C
0
0
25
50
75
100
125
150
0
0.5
1
1.5
TO-92 PACKAGE - MECHANICAL OUTLINE
A
B
123
SYMBOL
A (DIA)
B
C
D
E
F
G
H
I
C
D
E
F
G
H
I
2
VTM, ON-STATE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.175 0.205 4.45
5.21
0.170 0.210 4.32
5.33
0.500
12.70
0.016 0.022 0.41
0.56
0.100
2.54
0.050
1.27
0.125 0.165 3.18
4.19
0.080 0.105 2.03
2.67
0.015
0.38
TO-92 (REV: R1)
Lead Code:
R1
1) Anode
2) Gate
3) Cathode
2.5