BCR16PM-12LG Triac Medium Power Use REJ03G1511-0200 Rev.2.00 Jun 28, 2007 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Insulated Type • Planar Type • UL Recognized : Yellow Card No. E223904 File No.E80271 IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 3 1 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 2 3 Applications AC no junction Switching, light dimmer, electronic blanket, Control of household electrical appliance such as electric fans, solenoid driver, small motor control, and other general purpose control applications Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G1511-0200 Page 1 of 7 Rev.2.00 Jun 28, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR16PM-12LG Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 160 A I2 t 106.5 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 2.0 2000 W W V A °C °C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360°conduction, Tc = 87°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current Symbol IDRM Min. — Typ. — Max. 2.0 Unit mA VTM — — 1.5 V Tc = 25°C, ITM = 25 A, instantaneous measurement On-state voltage Test conditions Tj = 150°C, VDRM applied Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 30 30 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 3.5 V °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –8.0 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1511-0200 Page 2 of 7 Rev.2.00 Jun 28, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16PM-12LG Performance Curves 103 7 5 3 2 102 7 5 3 2 Tj = 150°C 101 7 5 3 2 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 180 160 140 120 100 80 60 40 20 0 100 4.0 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 101 7 5 3 VGT = 1.5V 2 PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 10–1 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 103 7 5 4 3 2 Typical Example IRGT III 102 7 5 4 3 2 IFGT I, IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G1511-0200 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) On-State Voltage (V) 3 2 VGM = 10V Gate Voltage (V) Surge On-State Current (A) 200 100 0.5 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current Rev.2.00 Jun 28, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 4.0 103 104 100 101 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 102 Conduction Time (Cycles at 60Hz) BCR16PM-12LG 103 7 5 3 2 Maximum On-State Power Dissipation 40 No Fins On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 25 20 15 10 5 0 4 6 8 10 12 14 16 18 20 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 120 100 80 60 40 360° Conduction Resistive, inductive loads 20 0 2 4 6 Ambient Temperature (°C) Curves apply regardless of conduction angle 8 10 12 14 16 18 20 140 All fins are black painted aluminum and greased 120 100 80 120 120 t2.3 100 100 t2.3 60 60 t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 2 RMS On-State Current (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) REJ03G1511-0200 Page 4 of 7 Rev.2.00 Jun 28, 2007 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 360° Conduction Resistive, inductive loads Conduction Time (Cycles at 60Hz) 140 Ambient Temperature (°C) 30 0 160 0 35 5 3 Typical Example 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140160 Junction Temperature (°C) BCR16PM-12LG 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) REJ03G1511-0200 Page 5 of 7 Rev.2.00 Jun 28, 2007 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 102 7 5 3 2 Time Main Voltage Typical Example (dv/dt)c VD Tj = 125°C Main Current (di/dt)c IT = 4A IT τ = 500µs τ Time VD = 200V f = 3Hz 101 7 Minimum 5 Characteristics Value I Quadrant 3 2 100 7 III Quadrant 3 5 7 101 2 3 5 7 102 2 3 Rate of Decay of On-State Commutating Current (A/ms) BCR16PM-12LG Gate Trigger Current vs. Gate Current Pulse Width 102 7 Typical Example Main Voltage (dv/dt)c 5 Tj = 150°C Main Current IT = 4A IT 3 τ = 500µs τ 2 VD = 200V f = 3Hz 101 7 I Quadrant 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=150°C) Time VD (di/dt)c Time III Quadrant 3 2 100 7 Minimum Characteristics Value 3 5 7 101 2 3 5 7 102 2 3 Rate of Decay of On-State Commutating Current (A/ms) Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 103 7 5 4 3 2 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V V 6Ω A V 330Ω Test Procedure III REJ03G1511-0200 Page 6 of 7 330Ω Test Procedure II Test Procedure I 6V R1 A 6V 330Ω Rev.2.00 Jun 28, 2007 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR16PM-12LG Package Dimensions Package Name TO-220F JEITA Package Code SC-67 Previous Code RENESAS Code PRSS0003AA-A MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Quantity Vinyl sack Plastic Magazine (Tube) 100 50 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G1511-0200 Page 7 of 7 Rev.2.00 Jun 28, 2007 Standard order code example BCR16PM-12LG BCR16PM-12LG-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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