AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AO8830 is Pbfree (meets ROHS & Sony 259 specifications). AO8830L is a Green Product ordering option. AO8830 and AO8830L are electrically identical. VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 41mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D2 D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ 1.6KΩ G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A ID IDM TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 30 1.5 W 0.94 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 4.8 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 6 Pulsed Drain Current B A Maximum 20 RθJA RθJL Typ 64 115 70 Max 83 140 85 Units °C/W °C/W °C/W AO8830 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=1mA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C Gate resistance Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 27 31 32 41 mΩ VGS=1.8V, ID=2A 42 55 mΩ VDS=5V, ID=6A 21 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=6A VGS=4.5V, VDS=10V, RL=1.7Ω, RGEN=3Ω 0.75 S 1 V 2.5 A 290 pF 120 pF 40 1.6 pF kΩ 5.2 nC 2.1 nC 1.9 nC 280 ns 972 2.35 ns µs 2.2 µs ns nC tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs, VGS=-9V 25 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs, VGS=-9V 8 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The currentand power rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 2: Aug 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. mΩ VGS=2.5V, ID=4A DYNAMIC PARAMETERS Ciss Input Capacitance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A mΩ IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg V 30 Forward Transconductance Reverse Transfer Capacitance 1 25 gFS Output Capacitance 0.6 VGS=4.5V, ID=5A VSD Crss µA V 22 TJ=125°C Coss 5 10 VGS=10V, ID=6A IS Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ AO8830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VGS=5V 3V 25°C 25 4V VGS =2V 125°C 20 ID(A) ID(A) 20 VGS =1.5V 10 15 10 5 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 1.5 2.0 1.6 60 Normalize ON-Resistance VGS =1.8V 50 RDS(ON)(mΩ) 1.0 VGS =2.5V 40 30 20 VGS =10V VGS =4.5V 10 2.5 3.0 3.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 0 VGS=4.5V VGS=2.5V 1.4 ID=5A ID=4A 1.2 VGS=10V 1.0 VGS=1.8V ID=6A ID=2A 0.8 0.6 0 5 10 15 20 -50 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 80 1E+01 ID=6A 70 1E+00 60 125°C 1E-01 50 IS(A) RDS(ON)(mΩ) 0.5 125°C 40 1E-02 1E-03 30 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO8830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=10V Capacitance (pF) 4 VGS(Volts) Ciss ID=6A 3 2 300 200 Coss Crss 100 1 0 0 0 1 2 3 4 5 0 6 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 30 100 TJ(Max)=150°C, TA=25°C Power (W) ID (Amps) 10 1ms 1 RDS(ON) limited 10ms 100m DC 10s 1 10 20 15 10 5 0 0.001 0.1 0.1 TJ(Max)=150°C TA=25°C 25 10µs 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=83°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000