SIDAC Bilateral Voltage triggered Switch Breakover Voltage:95-330Volts Mini-MELF(DO-213AA) General Description JJC' s SIDAC (Silicon Diode for Alternating Current) represents an unique set of thyristor qualities. The SIDAC is a bidirectional voltage triggered switch. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. conduction will continue until the current is interrupted or drops below the minimum holding current of the device. At present, JINGHENG can offer three kinds of package in DO-41,R-1，Mini-MELF,SMA,SOD-123FL JINGHENG's sidacs feature glass passivated junctions to ensure a rugged and dependable device capable of withstanding harsh environments. Inches (millimeters) SOLDERABLE ENDS 1st BAND 0.067(1.7) 0.059(1.5) 0.018(0.45) 0.010(0.25) 0.144(3.65) 0.136(3.45) SOD-123FL SMA(DO-214AC) Features 0.110(2.79) 0.100(2.54) Bilateral Voltage triggered 0.039(1.00 ) 0.020(0.50) 0.077(1.95 ) 0.054(1.38) AC circuit oriented Glass-passivated junctions 0.065(1.65) 0.049(1.25) High surge current capabilities Applications 0.090(2.29) High voltage lamp ignitors 0.078(1.98) Xenon ignitors 0.060(1.52) Natural gas ignitors 0.030(0.76) Over voltage protector Gas oil ignitors High voltage power supply Pulse generators Fluorescent lighting ignitors HID (high intensity discharge) lighting ignitors 0.114(2.90 ) 0.098(2.50) 0.181(4.60) 0.157(3.99) 0.154(3.90) 0.138(3.50) 0.012(0.305) 0.006(0.152) 5° 0.010(0.25) MAX 0.052(1.33) 0.031(0.8) 0.008(0.203) MAX 0.208(5.28) 0.189(4.80) 0.010(0.25) MIN DO-41 R-1 1.0(25.4) MIN. 0.102(2.6) 0.091(2.3) DIA. 0.025(0.65) 0.021(0.55) DIA. 1.0(25.4) MIN 0.107(2.7) 0.080(2.0) DIA. 0.205(5.20) 0.161(4.10) 0.140(3.5) 0.116(2.9) 1.0(25.4) MIN. www.shunyegroup.com.cn 1.0(25.4) MIN 0.034(0.85) 0.026(0.65) DIA. Electrical Specifications PART NUMBER IT(RMS) VDRM On-state RMS Current Tj≦110 C Repetitive Peak Off-state Voltage 50/60Hz DO-41 R-1 SMA DB105A DB105R DB105S SOD -123FL DB105K Mini -MELF IDRM VBO Breakover voltage 50/60Hz sine wave IBO Repetitive Peak Off-state Current 50/60hz Sine Wave V=VDRM Breakover Current 50/60Hz sine wave Amps Amps Amps Volts MAX MIN MIN MAX LL105 1.0 ±90 95 113 5 10 ±90 104 118 5 10 Volts MAX MAX DB110S DB110K LL110 1.0 DB120A DB120R DB120S DB120K LL120 1.0 ±90 110 125 5 10 DB130A DB130R DB130S DB130K LL130 1.0 ±90 120 138 5 10 DB140A DB140R DB140S DB140K LL140 1.0 ±90 130 146 5 10 DB150A DB150R DB150S DB150K LL150 1.0 ±90 140 170 5 10 DB200A DB200R DB200S DB200K LL200 1.0 ±180 190 215 5 10 LL220 1.0 ±180 205 230 5 10 220 250 5 10 DB110A DB110R DB220A DB220R DB220S DB220K DB240K LL240 1.0 ±190 DB250S DB250K LL250 1.0 ±190 240 280 5 10 DB300A DB300R DB300S DB300K LL300 1.0 ±190 270 330 5 10 DB240A DB240R DB250A DB250R IH DB240S VTM Dynamic Holding Current 50/60hz Sine Wave R=100 OHMS Peak On-state Voltage IT=1Amp Volts MAX mAmps RS ITSM Peak One Cycle Surge Current 50/60Hz Sine Wave (Non-Repetitive) Amps 60Hz 50Hz Switching Resistance (VBO-VS) Rs = (IS-IBO) 50/60Hz Sine Wave KΩ MIN 0.1 0.1 0.1 0.1 dv/dt Critical Rate-of-rise Of Off-state Voltage at Rate VDRM Tj ≦100 C Volts/ second MIN TYP 40 40 40 40 MAX 100 100 100 100 2.0 2 .0 2 .0 2.0 20 20 20 20 16.7 16.7 16.7 16.7 40 40 40 40 40 100 100 100 100 100 2 .0 2 .0 2 .0 20 20 20 20 20 16.7 16.7 16.7 16.7 16.7 0.1 1500 1500 0.1 0.1 0.1 0.1 1500 1500 1500 1500 40 40 100 100 20 20 16.7 16.7 0.1 0.1 1500 1500 2 .0 2 .0 2.0 2.0 www.shunyegroup.com.cn 1500 1500 1500 di/dt Critical Rate-of-Rise Of On-State Current Amps/ second TYP 150 150 150 150 150 150 150 150 150 150 150 Electrical Specifications V-I Characteristics FIG.1 Normalized DC Holding Current vs case/Lead Temperature +I IT IH IH (Tc=25 C) RS IH Ratio of IS IBO IDRM -V +V VT VDRM VSVBO Case Temperature(TC) RS= C (VBO-VS) (IS-IBO) FIG.3 Normalized Repetitive Peak Breakover Current vs Junction Temperature -I Peak surge (Non-repetitive) on-state current (ITSM)-Amps 100 SUPPLY FREQUENCY: 60Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated value at Special junction temperature 40 30 20 10 8.0 6.0 4.0 1.0 1.0 10 100 1000 FIG.4 Repetitive Peak On-State Current (ITRM) vs Pulse Width at Various Frequencies Non Repetitive Peak On-State Current (ITRM)-Amps 200 100 80 60 40 f=1 f=1 20 2X10-3 2 00H pea VBO Firing Current wavetorm ted pe vt titio nF z req ue z nc yf =5 Hz kHz kHz Hz 6 50 60 70 80 90 100 110 120 0 -2 -4 -6 -8 -10 Hz TJ=110 C Max 4 40 +2 to f=5 f=20k 30 FIG.5 Normalized CBO Changes vs Case Temperature ITRM f=1 f=10k 20 +4 -Re Re 0H V=VBO 3 Percentage of VBO Changes-% 400 1 0.8 0.6 4 di/dt Limit Line 600 2 5 Junction Temperature (TJ)- C Surge Current Duration- Full Cycles 10 8 6 4 9 8 7 6 1 BLOCKING CAPABILITY MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT IMTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE 2.0 Repetitive Peak Breakover Current (IBO) Multiplier FIG.2 Peak surge current vs surge current duration 8 1X10-2 2 4 6 8 1X10-1 2 4 6 8 1 -12 -40 -20 0 +20 +25 +40 +60 Junction Temperature(TJ) C Pulse base width (to)-mSec. www.shunyegroup.com.cn +80 +100 +120 Electrical Specifications FIG.7 Typical High Pressure Sodium Lamp Firing Circuit FIG.6 Ignitor Circuit (Low Voltage Input) 4.7mF BALLAST BALLAST 4.7KW 10mF 0.47mF 400V SIDAC - + 50V 0.22mF SIDAC SIDAC + - 4.7mF 100V 1.2mF LAMP 3.3KW 7.5KW LAMP 200V 24VAC 60Hz 120VAC 60Hz 220VAC 50Hz 16mH H.V. IGNITOR 120VAC FIG.8 Comparison of SIDAC vs SCR 220VAC FIG.9 Xenon Lamp Flashing Circuit 100 - XENON LAMP 10 F - + 250V 100-250 VAC 60Hz 100-250 VAC 60Hz S1 100 1% 0.1 F 400V VBO VBO IH TRACE STOPES IH + SIDAC VBO Ipk DEVICE UNDER TEST 4KV FIG.11 Basic SIDAC Circuit SWITCH TO TEST IN EACH DIRECTIONS 100-250 VAC 60Hz 20M 10 F 250V - FIG.10 Dynamic Holding Current Test Circuit for SIDAC PUSH TO TEST 120VAC 60Hz SIDAC 100-250 VAC 60Hz SCOPE www.shunyegroup.com.cn LOAD VVBO BO IH IH 125-145 CONDUCTION ANGLE LOAD CURRENT Electrical Specifications FIG.12 Relaxation Oscillator Using a SIDAC (a) Circuit (b) Waveforms VBO VC R SIDAC t VC VDC(IN) VBO IL C IL RL t Rmax VIN-VBO IBO VIN-VTM IH(MIN) Rmin FIG.13 SIDAC Added To Protect Transistor For Typical Transistor Inductive Load Switching Requirements INPUT VOLTAGE 0V VCE MONITOR TW=3ms (See Note A) TW (See Note B) INPUT 2N6127 (or equivalent) 5V 100mH COLLECTOR CURRENT RBB1=150W TIP-47 50W VCC=20V RBB2=100W 50W 100mS 0.63A + 0 SIDAC VBO + VBB1=10V RS=0.1W VBB2=0 IC MONITOR - COLLECTOR VOLTAGE 10V VCE(sat) TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTE A: Input pulse width is increased until ICM=0.63A. NOTE B: Sidac (or Diac or series of diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed. www.shunyegroup.com.cn