APT56M60B2 APT56M60L 600V, 56A, 0.13Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT56M60B2 APT56M60L Single die MOSFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 56 Continuous Drain Current @ TC = 100°C 35 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1580 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 28 A 1 210 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 10-2006 Typ Rev B Min Characteristic 050-8086 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 600 ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance TJ = 125°C 0.57 0.11 4 -10 0.13 5 25 500 ±100 Min f = 1MHz Co(er) 5 Effective Output Capacitance, Energy Related Typ Max 55 11300 115 1040 VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related Unit V V/°C Ω V mV/°C µA nA Unit S pF 550 VGS = 0V, VDS = 0V to 400V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tf VGS = 0V Test Conditions VDS = 50V, ID = 28A 4 td(off) TJ = 25°C Max TJ = 25°C unless otherwise specified Co(cr) tr VDS = 600V Typ VGS = ±30V Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Reference to 25°C, ID = 250µA VGS = 10V, ID = 28A 3 APT56M60B2_L Current Rise Time Turn-Off Delay Time 285 280 60 120 65 75 190 60 VGS = 0 to 10V, ID = 28A, VDS = 300V Resistive Switching VDD = 400V, ID = 28A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage ISD = 28A, TJ = 25°C, VGS = 0V trr Reverse Recovery Time ISD = 28A 3 Qrr Reverse Recovery Charge Peak Recovery dv/dt Typ Max Unit 56 A G VSD dv/dt Min D 210 S diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 28A, di/dt ≤1000A/µs, VDD = 100V, TJ = 125°C 1.0 745 19 V ns µC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 4.03mH, RG = 2.2Ω, IAS = 28A. 050-8086 Rev B 10-2006 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 250 V GS = 10V TJ = -55°C ID, DRIAN CURRENT (A) J 150 TJ = 25°C 100 50 TJ = 150°C V 60 6V 50 40 30 5.5V 20 10 TJ = 125°C 0 30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 5V 4.5V 0 NORMALIZED TO ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 140 120 TJ = -55°C 100 TJ = 25°C 80 TJ = 125°C 60 40 20 0 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature Ciss 10,000 TJ = 125°C 60 40 20 60 50 40 30 20 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 10 1000 Coss 100 Crss 10 600 500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 70 200 14 VDS = 120V 10 VDS = 300V 8 6 VDS = 480V 4 2 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 180 160 140 120 TJ = 25°C 100 80 TJ = 150°C 60 40 20 0 1.0 1.2 1.4 0.6 0.8 0.2 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 10-2006 ID = 28A 12 0 Rev B 0 16 0 8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics TJ = 25°C 80 0 0 20,000 TJ = -55°C C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 160 100 VGS, GATE-TO-SOURCE VOLTAGE (V) VDS> ID(ON) x RDS(ON) MAX. 180 ISD, REVERSE DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 200 VGS = 10V @ 28A 2.5 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics Figure 1, Output Characteristics 3.0 = 7&8V GS 70 050-8086 ID, DRAIN CURRENT (A) T = 125°C 80 200 0 APT56M60B2_L 90 100 I ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DM 13µs 10 100µs 1ms 10ms Rds(on) 100ms DC line 1 DM 13µs 10 100µs 1ms Rds(on) 0.1 10ms TJ = 150°C TC = 25°C 1 TJ = 125°C TC = 75°C 1 I 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25 C)*(TJ - TC)/125 ° C 800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 800 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area TJ (°C) 1 TC (°C) 0.00787 0.0416 0.0709 ZEXT 100 0.1 APT56M60B2_L 250 250 Dissipated Power (Watts) 0.0105 0.0341 0.510 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 11, Transient Thermal Impedance Model 0.12 D = 0.9 0.10 0.7 0.08 0.04 0.3 0.02 0.1 0 Note: 0.5 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 t2 t1 = Pulse Duration t SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10 t1 10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 -5 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 10-2006 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8086 Rev B Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 1.0