BC807/BC808 BC807/BC808 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Value Units : BC807 : BC808 -50 -30 V V : BC807 : BC808 -45 -25 V V Collector-Emitter Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation -310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC807 : BC808 Test Condition IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage : BC807 : BC808 IC= -0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 ICES Collector Cut-off Current VCE= -25V, VBE=0 IEBO Emitter Cut-off Current VEB= -4V, IC=0 hFE1 hFE2 DC Current Gain VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA f=50MHz Cob Output Capacitance VCB= -10V, f=1MHz BVCES ©2002 Fairchild Semiconductor Corporation Min. Typ. Max. Units -45 -25 V V -50 -30 V V -5 V 100 60 -100 nA -100 nA 630 100 MHz 12 pF Rev. A2, August 2002 Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60- 100- 170- Marking Code Type 807-16 807-25 807-40 808-16 808-25 808-40 Marking 9FA 9FB 9FC 9GA 9GB 9GC ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC807/BC808 hFE Classification BC807/BC808 Typical Characteristics -20 IB= mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB = -400 -300 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -500 A 1.5m IB = - -200 PT = 60 0mW IB = - 1.0mA IB = - 0.5mA -100 µA - 80 µA - 70 I = B -16 IB= µA - 60 IB= P T µA - 50 -12 IB= µA - 40 IB = - -8 30µA µA IB = - 20 -4 IB = - 10µA IB = 0 -0 -0 -1 -2 -3 -4 IB = 0 -0 -5 -0 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE PULSE hFE, DC CURRENT GAIN VCE = - 2.0V 100 - 1.0V 10 -1 -10 -100 -20 -30 -40 -50 Figure 2. Static Characteristic 1000 1 -0.1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic -1000 -10 IC = 10 IB PULSE V CE(sat) -1 -0.1 V BE(sat) -0.01 -0.1 IC[mA], COLLECTOR CURRENT -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 -1000 f = 1.0MHz VCE = -1V PULSE Cib, Cob[pF], CAPACITANCE IC[mA], COLLECTOR CURRENT =6 00 mW -100 -10 -1 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 Cib Cob 10 1 -0.1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation VEB[V], EMITTER-BASE VOLTAGE Figure 6. Input Output Capacitance Rev. A2, August 2002 BC807/BC808 Typical Characteristics (Continued) fT[MHz], GAIN BANDWIDTH PRODUCT 1000 VCE = -5.0V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC807/BC808 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1