AOSMD AO3407 P-channel enhancement mode field effect transistor Datasheet

Aug 2002
AO3407
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3407 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS (V) = -30V
ID = -4.1 A
RDS(ON) < 52mΩ (VGS = -10V)
RDS(ON) < 87mΩ (VGS = -4.5V)
D
TO-236
(SOT-23)
Top View
G
D
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
-20
1.4
W
1
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
-3.5
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
-4.1
TA=25°C
Power Dissipation A
Maximum
-30
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
AO3407
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VGS(th)
ID(ON)
Conditions
Min
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
-30
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-4.1A
Static Drain-Source On-Resistance
gFS
VSD
IS
VGS=-4.5V, ID=-3A
Forward Transconductance
VDS=-5V, ID=-4A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge (10V)
Qg
Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
trr
Qrr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Units
V
µA
-1.8
±100
-3
nA
V
40.5
57
64
52
73
87
mΩ
-1
S
V
-2.2
A
-10
TJ=125°C
5.5
A
8.2
-0.77
mΩ
700
pF
VGS=0V, VDS=-15V, f=1MHz
120
75
pF
pF
VGS=0V, VDS=0V, f=1MHz
10
Ω
14.3
nC
VGS=-4.5V, VDS=-15V, ID=-4A
7
3.1
nC
nC
VGS=-10V, VDS=-15V, RL=3.6Ω,
RGEN=3Ω
3
8.6
5
28.2
13.5
27
nC
ns
ns
ns
ns
Turn-Off Fall Time
IF=-4A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
-1
Max
-1
-5
TJ=55°C
RDS(ON)
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Typ
15
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
ns
nC
AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
-10V
-5V
-4.5V
-4V
6
10
-ID(A)
-ID (A)
VDS=-5V
8
15
-3.5V
5
VGS=-3V
0
0.00
4
125°C
2
25°C
0
1.00
2.00
3.00
4.00
5.00
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
100
Normalized On-Resistance
RDS(ON) (mΩ)
3
4
1.6
80
VGS=-4.5V
60
VGS=-10V
40
20
VGS=-4.5V
1.4
VGS=-10V
1.2
1
ID=-2A
0.8
0
2
4
6
8
10
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
160
140
1E+00
ID=-2A
120
1E-01
100
1E-02
-IS (A)
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
125°C
80
125°C
1E-03
25°C
1E-04
60
25°C
40
1E-05
1E-06
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=-15V
ID=-4A
800
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
600
400
Coss
Crss
200
0
0
0
4
8
12
16
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=150°C
TA=25°C
15
20
25
30
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100µs 10µs
Power (W)
-ID (Amps)
100
5
1ms
0.1s
10ms
1
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
SOT-23 Package Data
SYMBOLS
GAUGE PLANE
PACKAGE MARKING DESCRIPTION
SEATING PLANE
θ
A
A1
A2
b
C
D
E
E1
e
e1
L
θ1
DIMENSIONS IN MILLIMETERS
MIN
1.00
0.00
1.00
0.35
0.10
2.80
2.60
1.40
−−−
−−−
0.40
1°
NOM
−−−
−−−
1.10
0.40
0.15
2.90
2.80
1.60
0.95 BSC
1.90 BSC
−−−
5°
MAX
1.25
0.10
1.15
0.50
0.25
3.04
2.95
1.80
−−−
−−−
0.60
8°
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
RECOMMENDATION OF LAND PATTERN
SOT-23 PART NO. CODE
PNDLN
PART NO.
CODE
AO3407
A7
NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SOT-23 Carrier Tape
SOT-23 Reel
SOT-23 Tape
Leader / Trailer
& Orientation
SOT-23 Tape and Reel Data
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