Anachip AF4835P P-channel enhancement mode power mosfet Datasheet

AF4835P
P-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Simple Drive Requirement
- Low On-resistance
- Fast Switching
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOP-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Product Summary
BVDSS (V)
RDS(ON) (mΩ)
ID (A)
-30
20
-8
„ Pin Descriptions
„ Pin Assignments
S
1
8
D
Pin Name
Description
S
2
7
D
S
3
6
D
S
G
D
Source
Gate
Drain
G
4
5
D
SOP-8
„ Ordering information
Feature
F :MOSFET
A X
4835P X X X
PN
Package
Lead Free
Packing
S: SOP-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.2 Nov 19, 2004
1/6
AF4835P
P-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
TA=25ºC
Rating
-30
±20
-8
-6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
Maximum
50
Units
ºC/W
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient (Note 1)
Max.
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance (Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
Drain-Source Leakage Current
(TJ=70oC)
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
∆BVDSS / ∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Min.
Typ.
Max.
Units
-30
-
-
V
-
-0.037
-
V/oC
-1
-
20
20
35
-3
-
VDS=-30V, VGS=0V
-
-
-1
VDS=-24V, VGS=0V
-
-
-25
VGS=±20V
ID=-4.6A,
VDS=-15V,
VGS=-10V
VDS=-15V,
ID=-1A,
RG=6Ω, VGS=-10V
RD=15Ω
VGS=0V,
VDS=-15V,
f=1.0MHz
-
36
5.5
3.5
12
8
75
40
1530
900
280
±100
-
VGS=0V, ID=-250uA
Reference to 25oC,
ID=-1mA
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-5A
VDS=VGS, ID=-250uA
VDS=-15V, ID=-8A
mΩ
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current
(Body Diode)
Forward On Voltage (Note 3)
2
Test Conditions
VD=VG=0V, VS=-1.2V
Min.
Typ.
Max.
Unit
-
-
-2.08
A
-
-0.75
-1.2
V
o
TJ=25 C, IS=-2.1A,
VGS=0V
o
Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.2
2/6
Nov 19, 2004
AF4835P
P-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction
Temperature
Fig 5. Maximum Drain Current v.s. Case
Temperature
Fig 6. Typical Power Dissipation
Anachip Corp.
www.anachip.com.tw
Rev. 1.2
3/6
Nov 19, 2004
AF4835P
P-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Reverse
Diode
Fig 12. Gate Threshold Voltage v.s. Junction
Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.2
4/6
Nov 19, 2004
AF4835P
P-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.2
5/6
Nov 19, 2004
AF4835P
P-Channel Enhancement Mode Power MOSFET
„ Marking Information
SOP-8L
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
4835 P
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
„ Package Information
H
E
Package Type: SOP-8L
L
VIEW "A"
D
0.015x45
7 (4X)
B
e
A1
C
A
A2
7 (4X)
VIEW "A"
y
A
A1
A2
B
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.40
1.60
1.75
0.10
0.25
1.30
1.45
1.50
0.33
0.41
0.51
0.19
0.20
0.25
Dimensions In Inches
Min.
Nom.
Max.
0.055
0.063
0.069
0.040
0.100
0.051
0.057
0.059
0.013
0.016
0.020
0.0075
0.008
0.010
D
4.80
5.05
5.30
0.189
0.199
0.209
E
3.70
3.90
4.10
0.146
0.154
0.161
e
H
L
y
θ
5.79
0.38
0O
1.27
5.99
0.71
-
6.20
1.27
0.10
8O
0.228
0.015
0O
0.050
0.236
0.028
-
0.244
0.050
0.004
8O
Symbol
Anachip Corp.
www.anachip.com.tw
Rev. 1.2
6/6
Nov 19, 2004
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