AF4835P P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Product Summary BVDSS (V) RDS(ON) (mΩ) ID (A) -30 20 -8 Pin Descriptions Pin Assignments S 1 8 D Pin Name Description S 2 7 D S 3 6 D S G D Source Gate Drain G 4 5 D SOP-8 Ordering information Feature F :MOSFET A X 4835P X X X PN Package Lead Free Packing S: SOP-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.2 Nov 19, 2004 1/6 AF4835P P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ TA=25ºC Rating -30 ±20 -8 -6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V Maximum 50 Units ºC/W A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Min. Typ. Max. Units -30 - - V - -0.037 - V/oC -1 - 20 20 35 -3 - VDS=-30V, VGS=0V - - -1 VDS=-24V, VGS=0V - - -25 VGS=±20V ID=-4.6A, VDS=-15V, VGS=-10V VDS=-15V, ID=-1A, RG=6Ω, VGS=-10V RD=15Ω VGS=0V, VDS=-15V, f=1.0MHz - 36 5.5 3.5 12 8 75 40 1530 900 280 ±100 - VGS=0V, ID=-250uA Reference to 25oC, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-15V, ID=-8A mΩ V S uA nA nC ns pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current (Body Diode) Forward On Voltage (Note 3) 2 Test Conditions VD=VG=0V, VS=-1.2V Min. Typ. Max. Unit - - -2.08 A - -0.75 -1.2 V o TJ=25 C, IS=-2.1A, VGS=0V o Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.2 2/6 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Typical Power Dissipation Anachip Corp. www.anachip.com.tw Rev. 1.2 3/6 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.2 4/6 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.2 5/6 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Marking Information SOP-8L ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 4835 P AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information H E Package Type: SOP-8L L VIEW "A" D 0.015x45 7 (4X) B e A1 C A A2 7 (4X) VIEW "A" y A A1 A2 B C Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 D 4.80 5.05 5.30 0.189 0.199 0.209 E 3.70 3.90 4.10 0.146 0.154 0.161 e H L y θ 5.79 0.38 0O 1.27 5.99 0.71 - 6.20 1.27 0.10 8O 0.228 0.015 0O 0.050 0.236 0.028 - 0.244 0.050 0.004 8O Symbol Anachip Corp. www.anachip.com.tw Rev. 1.2 6/6 Nov 19, 2004