DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS28 High-speed double diode Product specification Supersedes data of April 1996 1996 Sep 10 Philips Semiconductors Product specification High-speed double diode BAS28 FEATURES DESCRIPTION • Small plastic SMD package The BAS28 consists of two high-speed switching diodes, fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V PINNING PIN DESCRIPTION 1 cathode (k1) 2 cathode (k2) 3 anode (a2) 4 anode (a1) • Repetitive peak forward current: max. 500 mA . handbook, halfpage 4 3 APPLICATIONS 4 3 1 2 • High-speed switching in e.g. surface mounted circuits. 1 2 Top view MAM059 Marking code: JTp. Fig.1 Simplified outline (SOT143) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current − 215 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 − 250 storage temperature −65 +150 °C junction temperature − 150 °C Ptot total power dissipation Tstg Tj Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 2 mW Philips Semiconductors Product specification High-speed double diode BAS28 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. MAX. UNIT see Fig.3 IF = 1 mA − 715 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 150 mA − 1.25 V see Fig.5 − VR = 25 V 30 nA VR = 75 V − 1 µA VR = 25 V; Tj = 150 °C − 30 µA VR = 75 V; Tj = 150 °C − 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 3 VALUE UNIT 360 K/W 500 K/W Philips Semiconductors Product specification High-speed double diode BAS28 GRAPHICAL DATA MSA562 -1 MBG382 300 250 handbook, halfpage IF (mA) IF (mA) 200 (1) (2) (3) 200 150 100 100 50 0 0 0 50 100 150 200 Tamb (oC) 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 4 104 Philips Semiconductors Product specification High-speed double diode BAS28 MGA884 105 Cd (pF) IR (nA) 10 V R = 75 V 4 max 103 10 MBG446 0.8 handbook, halfpage 0.6 75 V 0.4 25 V 2 0.2 typ typ 10 0 0 100 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 1996 Sep 10 Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diode BAS28 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 6 t tp output signal Philips Semiconductors Product specification High-speed double diode BAS28 PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 2 0 0.1 0.88 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. Fig.9 SOT143. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 10 7