Monolithic Hall Effect ICs EM-series EM-0712 Shipped in packet-tape reel(5000pcs/Reel) EM-0712 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC. Bipolar Hall Supply Voltage Power down Effect Latch 1.6〜5.5Ｖ Function Output Ultra High Sensitivity Bop：1.8mT SON CMOS Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Operational Characteristics Vout N H VoH Marking 1：VDD 1 2 2：VSS Bh 3：PDN L VOL S 4：OUT S-pole 0 Brp Bop N-pole Magnetic flux density ●Absolute Maximum Ratings（Ta=25℃） Item Symbol Limit Unit −0.1 〜 6.0 V ●Functional Block Diagram 1：VDD 3：PDN PDN input voltage Vin −0.1 〜 VDD＋0.1 PDN input current Iin Switch V ±10 mA Output Current Iout ±0.5 mA Operating Temperature Range Topr −30 〜 ＋85 ℃ Storage Temperature Range Tstg −40 〜 ＋125 ℃ Dynamic Offset Cancellation Supply Voltage VDD 4：OUT Oscillator Hall Chopper Amplifier & Element Stabilizer Timing Schmitt Trigger & Latch Logic 2：VSS Output Stage ●Magnetic q and Electrical Characteristics（Ta=25℃ VDD=3.0V） Item Symbol Conditions Supply Voltage VDD Min. Brp Hysteresis Bh Unit 5.5 V 4.0 mT PDN input Pluse Width −1.8 mT Pulse Drive Time TPD4 3.6 mT 1.6 Operating Point BOP Release Point Max. Typ. 1.8 −4.0 PDN input High voltage VIH 0.7VDD V PDN input Low voltage VIL 0.3 Output High Voltage VOH Io=−0.5mA VDD −0.4 Output Low Voltage VOL Io=＋0.5mA Supply Current1*2 IDD1 PDN=L Supply Current2*2 IDD2 PDN=H,Average V V 0.4 V 1 μA 150 μA 1 μA PDN mode transition time１ TPD1 Active→PDN (36.6) μsec PDN mode transition time2 TPD2 PDN→Active 100 μsec PDN input Current Iin 60 −1 Item Symbol Pulse Drive Period TPD3 Conditions Min. PDN=H 0.5 1.0 1.5 100 TW PDN=H 12.2 msec μsec 24.4 36.6 μsec ●Magnetic Characteristics w（Ta=−30〜＋85℃ VDD=3.0V） Item Symbol Conditions Min. Operating Point BOP Release Point Brp Hysteresis Bh Typ. Max. Unit 1.8 −4.2 −1.8 Note) The above specifications are design targets. 1［mT］=10［Gauss］ *1: Positive( + ) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor（Bop， Brp） *2: In case of PDN pin is held at VDD or VSS. *3: This transition time is not guarantee 17 Typ. Max. Unit 3.6 4.2 mT mT mT EM-0712 •Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the advance written approval of our sales staff. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such applications is understood to be fully at the risk of the customer using our devices or systems. ●Package（Unit:mm) φ0.3 Sensor Center 0.15±0.1 2 3 0.3 0.75 4 0.05 2 Pin No. 1 2 3 4 0.50＋0 −0.1 0.3 3 c 1 1.3 0.3 4 0.75 1 1.8±0.1 1 0.45±0.1 0.25±0.1 1.2±0.1 ●(For reference only)Land Pattern（Unit:mm) Pin Name Function VDD Supply Voltage VSS GND PDN Power Down OUT Output Voltage ※Note1) The sensor center is located within the φ0.3mm circle. Note2) The tolerances of dimensions with no mentions is ±0.1mm. Note3) Coplanarity:The differnces between standoff of terminals are max.50μm. Note4) Shaded area is plating area Note5) The center shadow area of the bottom of HIC does not need to be soldered. This area shares the lead frame with VSS inside the package and please be careful not to short this area to pins except No.2. ●Application Circuit VDD VDD Bypass Capacitor 0.1μF GND VSS OUT CMOS OUTPUT EM-0712 PDN CMOS INPUT g ●Function Timing Chart2（PDN＝H） ●Function Timing Chart1 IDD Bop 0 Brp IDD TPD3 Time TPD4 PDN t B t B Brp Bop OUT H or L t Vout TPD 2（〜100μs） TPD 2（〜100μs） t Vout k High High IDD Low Low TPD1（〜36.6μs） TPD1（〜36.6μs） t Operating Point Timing Release Point Timing t Note1) In power down mode, Output is kept current status. Note2) When VDD is supplied ,output settling time after power supply voltage exceeds 1.6V is equal to TPD2. ●Supply Voltage ●Temparature Dependence of Bop. Brp 4 6 Operating Point［mT］ Supply Voltage［V］ 4 3 2 1 n VDD＝3V 3 5 Bop 2 o 1 0 p −1 Brp −2 −3 0 −40 −20 0 20 40 60 Ambient Temperature［℃］ 80 100 −4 −40 −20 0 20 40 60 80 100 Ambient Temperature［℃］ 18 IMPORTANT NOTICE These products and their specifications are subject to change without notice. When you consider any use or application of these products, please make inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or authorized distributors as to current status of the products. Descriptions of external circuits, application circuits, software and other related information contained in this document are provided only to illustrate the operation and application examples of the semiconductor products. You are fully responsible for the incorporation of these external circuits, application circuits, software and other related information in the design of your equipments. AKM assumes no responsibility for any losses incurred by you or third parties arising from the use of these information herein. AKM assumes no liability for infringement of any patent, intellectual property, or other rights in the application or use of such information contained herein. Any export of these products, or devices or systems containing them, may require an export license or other official approval under the law and regulations of the country of export pertaining to customs and tariffs, currency exchange, or strategic materials. AKM products are neither intended nor authorized for use as critical componentsNote1) in any safety, life support, or other hazard related device or systemNote2), and AKM assumes no responsibility for such use, except for the use approved with the express written consent by Representative Director of AKM. As used here: Note1) A critical component is one whose failure to function or perform may reasonably be expected to result, whether directly or indirectly, in the loss of the safety or effectiveness of the device or system containing it, and which must therefore meet very high standards of performance and reliability. Note2) A hazard related device or system is one designed or intended for life support or maintenance of safety or for applications in medicine, aerospace, nuclear energy, or other fields, in which its failure to function or perform may reasonably be expected to result in loss of life or in significant injury or damage to person or property. It is the responsibility of the buyer or distributor of AKM products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the above content and conditions, and the buyer or distributor agrees to assume any and all responsibility and liability for and hold AKM harmless from any and all claims arising from the use of said product in the absence of such notification. June 2, 2010