AP4501GSD
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
▼ Simple Drive Requirement
N-CH BVDSS
D2
D1
▼ Low On-resistance
30V
RDS(ON)
D1
▼ Fast Switching Characteristic
27mΩ
ID
P-CH BVDSS
G2
S2
PDIP-8
7A
G1
-30V
RDS(ON)
S1
Description
49mΩ
ID
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-5A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
±20
±20
V
3
7
-5
A
3
5.8
-4.2
A
40
-30
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
62.5
℃/W
Data and specifications subject to change without notice
201030073-1/7
AP4501GSD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
30
-
-
V
VGS=10V, ID=7A
-
-
27
mΩ
VGS=4.5V, ID=5A
-
-
50
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=7A
-
12
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
ID=7A
-
9
13
nC
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
645
800
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min. Typ. Max. Units
IS=1.7A, VGS=0V
-
-
1.2
V
IS=7A, VGS=0V,
-
16
-
ns
dI/dt=100A/µs
-
10
-
nC
2/7
AP4501GSD
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
IGSS
VGS=0V, ID=-250uA
2
VGS(th)
IDSS
Test Conditions
Min. Typ. Max. Units
-30
-
-
V
VGS=-10V, ID=-5A
-
-
49
mΩ
VGS=-4.5V, ID=-3A
-
-
75
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-5A
-
5
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current ( Tj =70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
Drain-Source Leakage Current ( Tj =25 C)
2
±100 nA
Qg
Total Gate Charge
ID=-5A
-
8
15
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
VDS=-15V
-
6.7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
21
-
ns
tf
Fall Time
RD=15Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
595 730
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Min. Typ. Max. Units
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
AP4501GSD
N-Channel
36
40
10V
8.0V
6.0V
5.0V
ID , Drain Current (A)
30
20
V G =4. 0 V
5.0V
24
12
V G =4.0V
10
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
2
3
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
100
I D =7A
V G = 10V
Normalized RDS(ON)
I D =7A
T A =25 ℃
70
RDS(ON) (mΩ )
10V
8.0V
6.0V
T A =150 o C
ID , Drain Current (A)
T A =25 o C
40
1.4
0.8
0.2
10
2
5
8
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
3
2.5
2
T J =150 o C
VGS(th) (V)
1
o
IS(A)
T J =25 C
0.1
1.5
1
0.5
0.01
0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4501GSD
N-Channel
f=1.0MHz
1000
12
9
C iss
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =7.0A
6
C oss
C rss
100
3
0
10
0
4
8
12
16
1
7
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
19
25
31
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
100us
10
1ms
ID (A)
13
V DS , Drain-to-Source Voltage (V)
10ms
100ms
1
1s
10s
DC
0.1
T A =25 o C
Single Pulse
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =90o C/W
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5/7
AP4501GSD
P-Channel
40
40
-10V
-7.0V
-5.0V
-ID , Drain Current (A)
30
30
-4.5V
20
V G = -3 . 0 V
10
-10V
-7.0V
-5.0V
o
T A =150 C
-ID , Drain Current (A)
T A =25 o C
-4.5V
20
V G = -3 . 0 V
10
0
0
0
1
2
3
4
5
0
6
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.8
I D =-5.0A
T A =25 ℃
I D =-5.0A
V G = -10V
Normalized RDS(ON)
1.6
RDS(ON) (mΩ)
60
50
1.4
1.2
1
0.8
0.6
40
2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
Normalized -VGS(th) (V)
1.2
1
-IS(A)
T j =150 o C
T j =25 o C
0.1
1
0.8
0.6
0.01
0.4
0.1
0.4
0.7
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4501GSD
P-Channel
f=1.0MHz
14
1000
I D =-5.0A
V DS =-24V
C iss
10
C (pF)
-VGS , Gate to Source Voltage (V)
12
8
100
C oss
C rss
6
4
2
0
10
0
4
8
12
16
20
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
100us
10
-ID (A)
1ms
10ms
1
100ms
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
1s
10s
DC
0.1
o
T A =25 C
Single Pulse
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Gate Charge Characteristics
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Typical Capacitance Characteristics
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7/7