AP9579GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
-60V
RDS(ON)
25mΩ
ID
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
G
-45A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-45
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-28.7
A
1
IDM
Pulsed Drain Current
-160
A
PD@TC=25℃
Total Power Dissipation
89.3
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
o
C
-55 to 150
o
C
Operating Junction Temperature Range
TJ
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
1.4
o
C/W
62
o
C/W
1
201010111
AP9579GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-60
-
-
V
VGS=-10V, ID=-20A
-
-
25
mΩ
VGS=-4.5V, ID=-15A
-
-
30
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-20A
-
36
-
S
IDSS
Drain-Source Leakage Current
VDS=-48V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-20A
-
45
72
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
7.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
26
-
nC
VDS=-30V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-20A
-
38
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
70
-
ns
tf
Fall Time
VGS=-10V
-
94
-
ns
Ciss
Input Capacitance
VGS=0V
-
3600 5760
pF
Coss
Output Capacitance
VDS=-25V
-
375
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
270
-
pF
Min.
Typ.
IS=-20A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-20A, VGS=0V,
-
43
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
63
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9579GP-HF
100
160
-10V
-7.0V
-6.0V
-5.0V
-ID , Drain Current (A)
120
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
o
T C =150 C
80
-ID , Drain Current (A)
o
T C = 25 C
V G = -4.0V
80
60
40
40
20
0
0
0
4
8
12
16
0
2
Fig 1. Typical Output Characteristics
6
8
10
12
Fig 2. Typical Output Characteristics
25
2.0
I D = - 20 A
V G = -10V
I D = -15 A
T C =25 o C
Normalized RDS(ON)
23
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
21
19
1.6
1.2
0.8
17
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
Normalized -VGS(th) (V)
-IS(A)
16
12
T j =150 o C
T j =25 o C
8
1.2
0.8
0.4
4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9579GP-HF
f=1.0MHz
10
5000
-VGS , Gate to Source Voltage (V)
V DS = - 48 V
I D = - 20 A
8
4000
C (pF)
C iss
6
3000
4
2000
2
1000
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
10us
100
Operation in this area
limited by RDS(ON)
-ID (A)
100us
1ms
10
10ms
100ms
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4