IMP C3025 Process c3025 cmos 3um 10 volt analog Datasheet

®
ISO 9001 Registered
Process C3025
CMOS 3µm
10 Volt Analog
Electrical Characteristics
T=25oC Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTN
γN
βN
LeffN
∆WN
BVDSSN
VTFP(N)
Minimum
0.65
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γP
βP
LeffP
∆WP
BVDSSP
VTFP(P)
Minimum
–0.7
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Passivation Thickness
Symbol
ρP-well(f)
ρN+
xjN+
ρP+
xjP+
TGOX
TP1P2
ρPOLY1
ρPOLY2
ρM1
TPASS
Minimum
3.25
13
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CP1P2
Minimum
0.68
0.047
0.027
0.453
© IMP, Inc.
40
3.05
Typical
0.85
0.87
48
3.40
0.550
Maximum
1.05
Typical
–0.9
0.75
16
3.35
0.8
Maximum
–1.1
Typical
5.25
20
0.8
80
0.7
48
66
22
22
50
200+900
Maximum
7.25
27
Typical
0.72
0.0523
0.30
0.523
Maximum
0.78
0.0575
0.034
0.617
56
3.75
16.5
12
13
3.00
19
3.70
–16.5
–12
50
45
56
15
15
100
51
76
30
30
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
Unit
KΩ/o
Ω/o
µm
Ω/o
µm
nm
nm
Ω/o
Ω/o
mΩ/o
nm
Comments
P-well
Unit
fF/µm2
fF/µm2
fF/µm2
fF/µm2
Comments
oxide+nit.
93
Process C3025
Physical Characteristics
Starting Material
Starting Mat. Resistivity
Typ. Operating Voltage
Well Type
Metal Layers
Poly Layers
Contact Size
Metal-1 Width/Space
Gate Poly Width/Space
P <100>
15 - 25 Ω-cm
10V
P-well
1
2
2.0x2.0µm
3.5 / 2.5µm
3.0 / 3µm
N+/P+ Width/Space
N+ To P+ Space
Contact To Poly Space
Contact Overlap Of Active
Contact Overlap Of Poly
Metal-1 Overlap Of Contact
Minimum Pad Opening
Minimum Pad-to-Pad Spacing
Minimum Pad Pitch
Special Feature of C3025 Process: 10 Volt P-well single metal analog process.
94
C3025-4-98
3.0 / 3.0µm
12µm
2.5µm
1.5µm
1.0µm
1.0µm
100x100µm
5.0µm
80.0µm
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