ASI BLX96 Npn silicon rf power transistor Datasheet

BLX96
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .280 4L STUD
The BLX96 is Designed for Class A
Television Band IV- V Amplifier
Applications Requiring High Linearity.
A
45°
C
E
B
E
FEATURES:
B
• PG = 7.0 dB Typical at 860 MHz
• IMD3 = -63 dBc Typ. at PREF = 0.5 W
• Omnigold™ Metallization System
C
D
J
E
I
F
G
H
K
MAXIMUM RATINGS
IC
1.0 A
VCB
45 V
PDISS
16 W @ TC = 25 C
O
DIM
MINIMUM
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
O
O
O
.137 / 3.48
.130 / 3.30
G
-65 C to +200 C
TSTG
MAXIMUM
.572 / 14.53
F
TJ
.245 / 6.22
H
O
.255 / 6.48
.640 / 16.26
I
-65 C to +150 C
#8-32 UNC
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
O
θJC
11 C/W
CHARACTERISTICS
SYMBOL
ORDER CODE: ASI10784
O
TC = 25 C
TEST CONDITIONS
BVCEO
IC = 40 mA
BVCER
IC = 40 mA
BVCBO
MINIMUM TYPICAL MAXIMUM
UNITS
24
V
50
V
IC = 2 mA
45
V
BVEBO
IE = 0.5 mA
3.5
V
hFE
VCE = 20 V
COB
VCB = 20 V
PG
VCE = 25 V
IC= 250 mA
PREF = 0.5 W
F = 860 MHz
Vision = -8.0 dB Sound = -7.0 dB Chroma = -16 dB
IMD3
RBE = 10 Ω
IC = 250 mA
20
f = 1.0 MHz
6.0
---
10
pF
7.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
150
dB
-60
dBc
REV. A
1/1
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