HITFETBTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance R DS(on) 18 mΩ • Thermal Shutdown Current limit I D(lim) 9.5 A • Overload protection Nominal load current I D(ISO) 19 A • Short circuit protection Clamping energy EAS 6000 mJ • Overvoltage protection • Current limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD 2 M NC dv/dt limitation 1 IN 4 Drain 3 Source 5 Overvoltage protection Current limitation CC ESD R CC Overload protection Overtemperature protection Short circuit circuit Short protection protection HITFET Semiconductor Group Page 1 02.12.1998 BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Drain source voltage VDS Drain source voltage for short circuit protection RCC = 0 Ω VDS(SC) 60 Unit V 15 without RCC Continuous input current Value 50 mA I IN 1) -0.2V ≤ V IN ≤ 10V no limit VIN < -0.2V or VIN > 10V | IIN | ≤ 2 Operating temperature Tj - 40 ... +150 °C Storage temperature T stg - 55 ... +150 Power dissipation Ptot 240 W EAS 6000 mJ 3000 V T C = 25 °C Unclamped single pulse inductive energy I D(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection V LoadDump2) = V A + VS VIN=low or high; V A=13.5 V VLD t d = 400 ms, RI = 2 Ω, ID=0,5*19A 110 t d = 400 ms, RI = 2 Ω, ID= 19A 92 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: RthJC 0.7 junction - ambient: RthJA 75 SMD version, device on PCB: 3) RthJA 45 K/W 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical without blown air. Semiconductor Group Page 2 02.12.1998 BTS 949 Electrical Characteristics Parameter Symbol at Tj=25°C, unless otherwise specified Values Unit min. typ. max. 60 - 73 V - - 25 µA 1.3 1.7 2.2 V IIN(1) - - 100 µA Input current - current limitation mode, I D=ID(lim): I IN(2) - 400 1000 1500 3000 6000 T j = 25 °C 500 - - T j = 150 °C 300 - - Characteristics Drain source clamp voltage VDS(AZ) T j = - 40 ...+ 150°C, ID = 10 mA Off state drain current I DSS VDS = 32 V, T j = -40...+150 °C, V IN = 0 V Input threshold voltage VIN(th) I D = 3,9 mA Input current - normal operation, ID<ID(lim): VIN = 10 V VIN = 10 V Input current - after thermal shutdown, ID=0 A: VIN = 10 V I IN(3) Input holding current after thermal shutdown I IN(H) On-state resistance RDS(on) mΩ I D = 19 A, VIN = 5 V, Tj = 25 °C - 18 22 I D = 19 A, VIN = 5 V, Tj = 150 °C - 30 44 I D = 19 A, VIN = 10 V, T j = 25 °C - 14 18 I D = 19 A, VIN = 10 V, T j = 150 °C - 25 36 19 - - On-state resistance RDS(on) Nominal load current (ISO 10483) I D(ISO) A VIN = 10 V, V DS = 0.5 V, TC = 85 °C Semiconductor Group Page 3 02.12.1998 BTS 949 Electrical Characteristics Symbol Parameter at Tj=25°C, unless otherwise specified Values Unit min. typ. max. - 175 - 9.5 19 40 150 220 270 t on - 40 100 t off - 70 170 G9 '6GWRQ - 1 3 G9'6GW RII - 1 3 150 165 - Characteristics Initial peak short circuit current limit ID(SCp) A VIN = 10 V, VDS = 12 V Current limit 1) ID(lim) VIN = 10 V, VDS = 12 V, tm = 350 µs, Tj = -40...+150 °C, without RCC VIN = 10 V, VDS = 12 V, tm = 350 µs, Tj = -40...+150 °C, RCC = 0 Ω Dynamic Characteristics Turn-on time VIN to 90% I D: µs RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V Turn-off time V IN to 10% ID: RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V 70 to 50% Vbb: RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V Slew rate on Slew rate off 50 to 70% Vbb: V/µs RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V Protection Functions Thermal overload trip temperature T jt Unclamped single pulse inductive energy EAS °C mJ I D = 19 A, Tj = 25 °C, Vbb = 32 V 6000 - - I D = 19 A, Tj = 150 °C, Vbb = 32 V 1800 - - - 1,1 - Inverse Diode Inverse diode forward voltage VSD V I F = 5*19A, t m = 300 µS, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim) . Dependant on the application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition Semiconductor Group Page 4 02.12.1998 BTS 949 Block Diagramm Terms Inductive and overvoltage output clamp RL I IN V Z 3 1 D IN ID VDS Vbb S HITFET RCC V IN V D 4 CC S 5 CC HITFET Short circuit behaviour The ground lead impedance of RCC should be as low as possible V IN Input circuit (ESD protection) I D(SCp) I D(Lim) ID IN ESD-ZD I Source t0 ESD zener diodes are not designed for DC current > 2 mA @ VIN>10V. t0: tm: t1: t2: Semiconductor Group Page 5 tm t1 t2 Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. 02.12.1998 BTS 949 Maximum allowable power dissipation On-state resistance Ptot = f(Tc) RON = f(Tj ); ID=19A; VIN =10V BTS 949 40 260 W mΩ 220 200 RDS(on) 30 Ptot 180 160 140 25 max. 20 120 typ. 15 100 80 10 60 40 5 20 0 0 20 40 60 80 100 120 °C 0 -50 160 -25 0 25 50 75 100 °C 150 Tj 150 On-state resistance Typ. input threshold voltage RON = f(Tj ); ID= 19A; VIN=5V VIN(th) = f(Tj); ID =3,9A; VDS=12V 45 2.2 mΩ V 1.8 1.6 VIN(th) RDS(on) 35 30 max. 25 1.4 1.2 1.0 typ. 20 0.8 15 0.6 10 0.4 5 0 -50 0.2 -25 0 25 50 75 100 °C 150 Tj Semiconductor Group 0.0 -50 -25 0 25 50 75 100 °C 150 Tj Page 6 02.12.1998 BTS 949 Typ. transfer characteristics Typ. short circuit current I D = f(V IN); V DS=12V; Tj=25°C IDlim = f(Tj); RCC =0Ω, VDS =12V Parameter: VIN 250 160 A 10V A 9V 120 ID ID 8V 100 150 7V 80 6V 100 60 5V 40 4V 50 20 0 0 3V 1 2 3 4 5 V 0 -50 7 -25 0 25 50 75 100 VIN °C 150 Tj Typ. output characteristic Safe Operating Area ID = f(VDS); T j=25°C ID(SC) = f(VDS ); Tj =25°C Parameter: VIN 150 300 10V A A 6V 100 ID ID 200 5V 75 150 4V 50 100 25 50 VIN=3V 0 0 1 2 3 4 5 V 0 0 7 VDS Semiconductor Group 10 20 30 V 50 VDS Page 7 02.12.1998 BTS 949 Typ. current limit versus R CC Typ. current sense characteristics I D(lim) = f(RCC); T j=25°C VCC = f(ID); VIN=10V Parameter: VIN Parameter: RCC , Tj 250 A 600 mV 10V no Rcc 500 200 450 25°C VCC ID 175 150 400 125 300 100 250 5V 82 Ohm 350 125°C 47 Ohm 200 75 150 22 Ohm 50 100 25 0 -2 10 50 -1 10 10 0 10 1 10 2 10 Ω RCC 4 0 0 10 20 30 40 50 A 65 ID Transient thermal impedance ZthJC = f(tP) Parameter: D=t P/T 10 0 K/W 10 -1 D=0.5 0.2 Z thJC 0.1 0.05 0.02 10 -2 0.01 0.005 10 -3 0 10 -4 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 2 tP Semiconductor Group Page 8 02.12.1998 BTS 949 Application examples: Current Sense Features and Status Signals IN D HITFET µC CC V bb S RCC V CC IN open load thermal shutdown V cc V cc reached triptemperature The accuray of Vcc is at each temperature about ±10 % Status signal of thermal shutdown by monitoring input current R St IN µC V IN D HITFET CC V bb S ∆V V IN thermal shutdown ∆V = RST *IIN(3) Semiconductor Group Page 9 02.12.1998 BTS 949 Package and ordering code all dimensions in mm Ordering code: Q67060-S6703-A4 Ordering Code: Q67060-S6703-A2 Ordering Code: Q67060-S6703-A3 Semiconductor Group Page 10 02.12.1998 BTS 949 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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Semiconductor Group Page 11 02.12.1998