Jiangsu DTC114TE Digital transistors (built-in resistors) Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC114TE/DTC114TUA
DTC114TKA/DTC114TCA /DTC114TSA
DIGITAL TRANSISTOR (NPN)
FEATURES
∙ Built-in bias resistors enable the configuration of an
inverter circuit without connecting extemal input resistors.
∙ The bias resistors conisit of thin-film resistors with
complete isolation to without connecting extemal input.
They also have the advantage of almost completely
Eliminating parasitic effects.
∙ Only the on/off conditions need to be set for operation,
marking device design easy.
PIN CONNENCTIONS AND MARKING
DTC114TE
SOT-523
DTC114TUA
(1) Base
(1)(1)
Base
Base
(2) Emitter
(2)(2)
Emitter
Emitter
(3) Collector
(3)(3)
Collector
Collector
SOT-323
Addreviated symbol: 04
DTC114TKA
(1) Base
Addreviated symbol: 04
DTC114TCA
DTA114ECA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
(2) Emitter
(3) Collector
SOT-23-3L
SOT-23
Addreviated symbol:04
DTC114TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
Addreviated symbol: 04
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
LIMITS(DTC114T□)
Parameter
E
UA
KA
Units
CA
SA
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
100
mA
PC
Collector Dissipation
Tj
Junction temperature
TJ, Tstg
Junction and Storage Temperature
150
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless
200
300
mW
150
℃
-55~+150
℃
otherwise
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
Ic=50µA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.5
uA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
uA
DC current gain
hFE
VCE=5V,IC=1mA
VCE(sat)
IC=10mA,IB=1mA
Collector-emitter saturation voltage
Transition frequency
fT
Imput resistor
R1
Typical Characteristics
conditions
specified)
MIN
100
TYP
300
MAX
600
0.3
VCE=10V,IE=-5mA, f=100MHz
250
7
10
UNIT
V
MHz
13
kΩ
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