POINN BD646 Pnp silicon power darlington Datasheet

BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
●
MAY 1993 - REVISED MARCH 1997
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
TO-220 PACKAGE
(TOP VIEW)
●
62.5 W at 25°C Case Temperature
●
8 A Continuous Collector Current
B
1
●
Minimum hFE of 750 at 3 V, 3 A
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD646
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BD648
BD650
VCBO
-100
-140
-60
BD650
VCEO
BD652
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
-120
BD652
BD648
UNIT
-80
BD646
Emitter-base voltage
NOTES: 1.
2.
3.
4.
VALUE
-80
V
-100
-120
V EBO
-5
V
IC
-8
A
ICM
-12
A
IB
-0.3
A
Ptot
62.5
W
Ptot
2
W
½LIC 2
50
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BD646
V (BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
V BE(sat)
VBE(on)
Collector-emitter
MAX
BD648
-80
BD650
-100
BD652
-120
IC = -30 mA
IB = 0
VCE = -30 V
IB = 0
BD646
-0.5
Collector-emitter
V CE = -40 V
IB = 0
BD648
-0.5
cut-off current
V CE = -50 V
IB = 0
BD650
-0.5
V CE = -60 V
IB = 0
BD652
-0.5
VCB = -60 V
IE = 0
BD646
-0.2
V CB = -80 V
IE = 0
BD648
-0.2
V CB = -100 V
IE = 0
BD650
-0.2
Collector cut-off
V CB = -120 V
IE = 0
BD652
-0.2
current
V CB = -40 V
IE = 0
TC = 150°C
BD646
-2.0
V CB = -50 V
IE = 0
TC = 150°C
BD648
-2.0
V CB = -60 V
IE = 0
TC = 150°C
BD650
-2.0
V CB = -70 V
IE = 0
TC = 150°C
BD652
-2.0
VEB =
-5 V
IC = 0
(see Notes 5 and 6)
VCE =
-3 V
IC =
-3 A
breakdown voltage
Emitter cut-off
current
Forward current
transfer ratio
(see Note 5)
TYP
(see Notes 5 and 6)
UNIT
-60
V
-5
mA
mA
mA
750
Collector-emitter
IB =
-12 mA
IC =
-3 A
saturation voltage
IB =
-50 mA
IC =
-5 A
IB =
-50 mA
IC =
-5 A
(see Notes 5 and 6)
-3
V
-3 V
IC =
-3 A
(see Notes 5 and 6)
-2.5
V
Base-emitter
saturation voltage
Base-emitter
VCE =
voltage
-2
(see Notes 5 and 6)
-2.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
2.0
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
PRODUCT
2
INFORMATION
MIN
TYP
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AD
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = -3 V
t p = 300 µs, duty cycle < 2%
100
-0·5
-1·0
-10
TCS135AB
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-0·5
-0·5
IC - Collector Current - A
-1·0
-10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AC
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS135AC
-1·0
-0·1
BD646
BD648
BD650
BD652
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AC
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
125
150
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT
MDXXBE
INFORMATION
5
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION
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