Ordering number : ENA0522A CPH6532 Bipolar Transistor http://onsemi.com 50V, 1A, Low VCE(sat) NPN Dual CPH6 Applications • Relay drivers, lamp drivers, motor drivers, flash Features • • • Composite type with two NPN transistors contained in one package facilitating high-density mounting The two chips contained are equivalent to the CPH3216 Ultrasmall package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCES 80 V 80 V VCEO VEBO 50 V 5 V 1.0 A Collector Current (Pulse) IC ICP Base Current IB 200 mA Collector Dissipation When mounted on ceramic substrate (600mm2×0.8mm) 1unit 0.9 W Total Power Dissipation PC PT When mounted on ceramic substrate (600mm2×0.8mm) 1.1 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current 2 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7018A-006 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. ET 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6532-TL-E 0.15 2.9 6 TL 3 0.4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Electrical Connection 6 5 4 1 2 3 CPH6 Semiconductor Components Industries, LLC, 2013 August, 2013 62712 TKIM/11007EA TIIM TC-00000428 No. A0522-1/6 CPH6532 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ Unit max ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=100mA VCE=10V, IC=300mA Output Capacitance Cob VCE(sat)1 VCB=10V, f=1MHz IC=500mA, IB=10mA VCE(sat)2 IC=300mA, IB=6mA VBE(sat) V(BR)CBO IC=500mA, IB=10mA IC=10μA, IE=0A 80 V V(BR)CES V(BR)CEO IC=100μA, RBE=0Ω 80 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 5 tstg tf See specified Test Circuit. Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 200 0.1 μA 0.1 μA 560 420 MHz 6 pF 130 190 mV 90 135 mV 0.81 1.2 V V 38 ns 332 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IC OUTPUT IB2 INPUT RB VR RL + 50Ω + 100μF 470μF VBE= --5V VCC=25V 20IB1= --20IB2=IC=500mA Ordering Information Shipping memo CPH6 3,000pcs./reel Pb Free mA 2 0 Collector Current, IC -- A 0.7 6mA 0.6 4mA 0.5 2mA 0.4 VCE=2V 0.9 10mA 8mA 30 50mA 0.8 mA A 40m 0.9 IC -- VBE 1.0 0.3 0.8 0.7 0.6 0.5 0.4 0.3 Ta= 7 0.2 0.2 0.1 0.1 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT11441 25°C --25° C IC -- VCE 1.0 Collector Current, IC -- A Package 5°C Device CPH6532-TL-E 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Base-to-Emitter Voltage, VBE -- V 0.9 1.0 IT11416 No. A0522-2/6 CPH6532 hFE -- IC 1000 VCE=2V Ta=75°C DC Current Gain, hFE 3 --25°C 2 VCE=10V 3 Gain-Bandwidth Product, f T -- MHz 7 5 f T -- IC 5 25°C 100 7 5 3 2 2 1000 7 5 3 2 100 7 5 3 10 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 2 0.01 3 5 7 2 0.1 3 5 7 2 1.0 3 IT01650 VCE(sat) -- IC 3 f=1MHz IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 Output Capacitance, Cob -- pF 3 Collector Current, IC -- A Cob -- VCB 100 2 IT01648 5 3 2 10 7 5 2 0.1 7 5 5°C 7 Ta= 3 25 C --25° 2 °C 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 0.01 5 7 100 IT01652 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 0.1 °C =75 Ta C 25° 3 2 0.01 2 3 5 7 2 0.1 3 5 1.0 IT11420 Collector Current, IC -- A 3 s DC 10 0m op s er 2 ms 10 Collector Current, IC -- A μs 100 0μs 50 1m 3 ati on 0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.1 2 3 7 1.0 IT11418 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 2 3 5 7 2 0.1 3 5 7 1.0 IT01658 PC -- Ta Mounted on a ceramic board (600mm2✕0.8mm) 1.2 IC=1A 1.0 7 5 5 IC / IB=50 1.4 ICP=2A 2 3 Collector Current, IC -- A ASO 5 2 0.1 VBE(sat) -- IC 0.1 0.01 7 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 °C --25 7 7 3 5 5 10 IC / IB=50 7 3 Collector Current, IC -- A VCE(sat) -- IC 5 2 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 1.1 1.0 0.9 To ta 0.8 ld 1u nit 0.6 iss ipa tio n 0.4 0.2 0 3 5 7 IT11541 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10764 No. A0522-3/6 CPH6532 Embossed Taping Specification CPH6532-TL-E No. A0522-4/6 CPH6532 Outline Drawing CPH6532-TL-E Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A0522-5/6 CPH6532 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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