FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET Features General Description ■ –14.5 A, –30 V. RDS(ON) = 7.2 mΩ @ VGS = –10 V RDS(ON) = 11 mΩ @ VGS = – 4.5 V This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. ■ Extended VGSS range (–25V) for battery applications ■ ESD protection diode (note 3) ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D D D SO-8 S S S G 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation – Continuous Ratings Units –30 V (Note 1a) – Pulsed TJ, TSTG +25 V –14.5 A –50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1.0 Operating and Storage Junction Temperature Range W –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6673AZ FDS6673AZ 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS6673AZ Rev. C(W) 1 www.fairchildsemi.com FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET April 2005 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±10 µA –30 V mV/°C –25 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 5.8 RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –14.5 A VGS = –4.5 V, ID = –12 A VGS = –4.5 V, ID = –14.5A, TJ = 125°C 6.0 8.8 7.8 gFS Forward Transconductance VDS = –5 V, ID = –14.5 A 50 VDS = –15 V, VGS = 0 V, f = 1.0 MHz 4480 pF 1190 pF 615 pF –1 –1.6 –3 V mV/°C 7.2 11 10.4 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.8 VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 22 Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –15 V, ID = –14.5 A, VGS = –10 V 35 ns 8 16 ns 134 214 ns 79 126 ns 84 118 nC 12 nC 19 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A tRR Reverse Recovery Time QRR Reverse Recovery Charge IF = –14.5 A, diF/dt = 100 A/µs –2.1 (Note 2) (Note 2) –0.7 –1.2 A V 44 ns 29 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W (10 sec) 62.5° C/W steady state when mounted on a 1 in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 2 FDS6673AZ Rev. C(W) www.fairchildsemi.com FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 80 3.8 -4.5V -4.0V -ID, DRAIN CURRENT (A) -6.0V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -3.5V 60 40 -3.0V 20 0 3 V GS = - 3.0V 2.6 2.2 -3.5V 1.8 -4.0V -4.5V 1.4 -5.0V 0.5 1 1.5 2 -10V 0 20 40 60 80 -V DS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.7 0.02 ID = -14.5A VGS = -10V I D = -7.3A RDS(ON), ON-RESISTANCE (OHM) 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.02 0.02 TA = 125 o C 0.01 0.01 T A = 25 oC 0.00 -50 -25 0 25 50 75 100 125 150 175 2 4 T J, JUNCTION TEMPERATURE (°C) 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 80 100 VGS = 0V -IS , REVERSE DRAIN CURRENT (A) 25°C TA = -55°C VDS = -5V -ID, DRAIN CURRENT (A) -6.0V 1 0.6 0 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.4 125°·C 60 40 20 0 10 T A = 125°C 1 25°C 0.1 -55°C 0.01 0.001 1.5 2 2.5 3 3.5 0 4 -V GS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDS6673AZ Rev. C(W) 0.2 www.fairchildsemi.com FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET Typical Characteristics 6000 I D = -14.5A VDS = -10V 5000 8 -20V 6 4 4000 3000 2000 COSS 2 1000 CRSS 0 0 0 10 20 30 40 50 60 70 80 90 0 10 15 20 25 30 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) 50 100 µs RDS(ON) LIMIT 1ms 10ms 10 10s 1 100ms 1s DC VGS = -10V SINGLE PULSE 0.1 RθJA = 125°C/W TA = 25°C 0.01 0.01 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 Q g, GATE CHARGE (nC) 100 -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 0.1 1 10 SINGLE PULSE RθJA = 125°C/W T A = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 1000 -V DS , DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 0.1 D = 0.5 R θJA (t) = r(t) * R θJA 0.2 R θJA = 125°C/W 0.1 P(pk) 0.05 t1 0.02 t2 T J - T A = P * R θJA (t) Duty Cycle, D = t1/t 2 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 4 FDS6673AZ Rev. C(W) www.fairchildsemi.com FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 FDS6673AZ Rev. C(W) www.fairchildsemi.com FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET TRADEMARKS