polyfet rf devices F1427 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance 250 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 440 Watts Maximum Junction Temperature 0.4 o C/W 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage -65 o C to 150o C 10 A 150 V 150 V 30V RF CHARACTERISTICS ( 250 WATTS OUTPUT ) SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficienc VSWR MIN TYP MAX 13 65 Load Mismatch Toleranc 20:1 UNITS TEST CONDITIONS dB Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz % Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz Relative Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN Bvdss Drain Breakdown Voltag 125 Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson TYP MAX UNITS V 1 TEST CONDITIONS Ids = 0.1 A, Vgs = 0V 12 mA Vds = 50.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.15 A, Vgs = Vds 4.8 Mho Vds = 10V, Vgs = 5V Saturation Resistanc 0.25 Ohm Vgs = 20V, Ids = 12 A Idsat Saturation Curren 28.8 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 270 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 13.2 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 120 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1427 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1E 6 DICE CAPACITANCE 1000 Ciss Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1E6DICE IV F1E 6 DICE ID & GM Vs VG 30 Id in amps; Gm in mhos 100.00 25 ID IN AMPS 20 15 10 5 Id 10.00 gM 1.00 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDSINVOLTS Vg=6v vg=8v 14 vg=10v S11 AND S22 SMITH CHART 16 18 20 0 2 4 6 8 10 12 14 16 18 20 Vgs in Volts vg=12v PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com