APM2307 P-Channel Enhancement Mode MOSFET Features Pin Description D • -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SOT-23 Package G Top View of SOT-23 Applications • S Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information A P M 23 07 Package Code A : S O T -23 O peration Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel H andling C ode T em p. R an ge Package Code A P M 2307 A : X - D ate C ode M 07X Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous -3 IDM Maximum Drain Current – Pulsed -12 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 1 www.anpec.com.tw APM2307 Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TJ (TA = 25°C unless otherwise noted) Rating TA=25°C 1.25 TA=100°C 0.5 Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol Parameter Unit W 150 °C -55 to 150 °C 100 °C/W (TA = 25°C unless otherwise noted) Test Condition APM2307 Typ. Max. Min. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa VGS=0V , IDS=-250µA -30 V VDS=-24V , VGS=0V VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V -1 -1 µA -3 ±100 V nA Drain-Source On-state VGS=-10V , IDS=-3A 100 120 Resistance VGS=-4.5V , IDS=-2.5A 140 170 Diode Forward Voltage ISD=-1.25A , VGS=0V 0.6 1.3 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Tr Turn-on Delay Time Turn-on Rise Time td(OFF) Turn-off Delay Time VDS=-15V , IDS=-3A VGS=-10V 8 13 1.9 nC 1.1 VDD=-15V , IDS=-1A , VGEN=-10V , RG=6Ω RL=15Ω Tf Turn-off Fall Time Ciss Input Capacitance Coss Crss Output Capacitance VDS=-25V Reverse Transfer Capacitance Frequency=1.0MHz VGS=0V 10 8 20 20 25 50 5 15 ns 550 120 75 pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 2 www.anpec.com.tw APM2307 Typical Characteristics Output Characteristics Transfer Characteristics 10 10 -VGS=5,6,7,8,9,10V -ID-Drain Current (A) -ID-Drain Current (A) 8 -V GS=4V 6 4 -V GS=3V 2 0 0 2 4 6 8 6 4 TJ=125°C 2 8 0 10 TJ=-55°C TJ=25°C 0 1 -VDS - Drain-to-Source Voltage (V) 2 3 4 5 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.30 1.50 1.25 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250uA 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 0.20 -VGS=4.5V 0.15 -VGS=10V 0.10 0.05 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 0.25 0 1 2 3 4 5 6 7 8 -ID - Drain Current (A) 3 www.anpec.com.tw APM2307 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 2.00 -ID=3A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.5 On-Resistance vs. Junction Temperature 0.4 0.3 0.2 0.1 1.75 -V GS=10V -ID=3A 1.50 1.25 1.00 0.75 0.50 0.25 0.0 0 2 4 6 8 0.00 -50 10 -VGS - Gate-to-Source Voltage (V) -25 50 75 100 125 150 Capacitance 800 10 -V DS=10V 9 -ID=3A 700 8 7 Capacitance (pF) -VGS-Gate-Source Voltage (V) 25 TJ - Junction Temperature (°C) Gate Charge 6 5 4 3 2 600 Ciss 500 400 300 200 Coss Crss 100 1 0 0 0 1 2 3 4 5 6 7 0 8 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 0 5 10 15 20 25 30 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2307 Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 12 10 Power (W) -IS-Source Current (A) 10 1 TJ=150°C TJ=25°C 8 6 4 2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 100 500 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 500 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 5 www.anpec.com.tw APM2307 Packaging Information SOT-23 D B 3 E H 2 1 S e A L A1 Dim C M illim et er s Inc he s A M in. 1. 0 0 M ax. 1. 3 0 M in. 0. 0 39 M ax. 0. 0 51 A1 0. 0 0 0. 1 0 0. 0 00 0. 0 04 B 0. 3 5 0. 5 1 0. 0 14 0. 0 20 C 0. 1 0 0. 2 5 0. 0 04 0. 0 10 D 2. 7 0 3. 1 0 0. 1 06 0. 1 22 E 1. 4 0 1. 8 0 0. 0 55 0. 0 71 3. 0 0 0. 0 94 e 1. 9 0 B SC H 2. 4 0 L 0. 3 7 Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 0. 0 75 B SC 0. 11 8 0. 0 01 5 6 www.anpec.com.tw APM2307 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature Convection or IR/ Convection VPR 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 10 °C /second max. 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. 215~ 219°C or 235 +5/-0°C 10 °C /second max. 60 seconds Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2307 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOT-23 A B 178±1 72 ± 1.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 1.5 +0.1 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 C J 13.0 + 0.2 2.5 ± 0.15 8 T1 T2 P E 1.5± 0.3 W 8.0+ 0.3 - 0.3 8.4 ± 2 4 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 3.2± 0.1 1.4± 0.1 0.2±0.03 2.0 ± 0.1 3.15 ± 0.1 www.anpec.com.tw APM2307 Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - Jun., 2003 9 www.anpec.com.tw