SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBB540-G Thru. CDBB5100-G Reverse Voltage: 40,60,100 Volts Forward Current: 5.0 Amp RoHS Device Features -Batch process design, excellent powe dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage dorp. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 SMB-1 0.213(5.4) 0.197(5.0) 0.016(0.4) Typ. 0.142(3.6) 0.126(3.2) 0.168(4.2) 0.150(3.8) Mechanical data -Case: Molded plastic, JEDEC SMB. -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight:0.09 gram(approx.). 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040(1.0) Typ. Dimensions in inches and (millimeter) Maximum Ratings(at TA=25°C unless otherwise noted) Symbol CDBB540-G CDBB560-G CDBB5100-G Unit Repetitive peak reverse voltage VRRM 40 60 100 V Maximum RMS voltage VRMS 28 42 70 V Continuous reverse voltage VR 40 60 100 V Maximum forward voltage @IF=1.0A VF 0.55 0.75 0.85 V Forward rectified current IO 5.0 A IFSM 150 A Parameter Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM @TA=25°C @TA=125°C Typ. thermal resistance, junction to ambient air 0.5 IR mA 50 RθJA 12 °C/W Typ. diode junction capacitance (Note 1) CJ 380 pF Operating junction temperature TJ Storage temperature -55 to +125 TSTG -55 to +150 -65 to +175 °C °C Note 1: f=1MHz and applied 4V DC reverse voltage. REV:A Page 1 QW-BB028 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CDBB540-G Thru. CDBB5100-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 56 BB CD 1 TJ=75°C 0.1 BB 5 10 10 0- G CD ΙF, Forward Current (A) IR, Reverse Current (mA) 40 -G 100 C 1 B5 DB 00 -G 1 0.1 TJ=25°C 0.01 0.01 0 40 80 120 0.1 200 0.5 0.9 1.3 2.1 1.7 Percent of Rated Peak Reverse Voltage (%) VF, Forward Voltage (V) Fig.3 Junction Capacitance Fig.4 Current Derating Curve 7 1400 1200 1000 800 5 BB 60 .C -G 1 B5 DB 2 00 -G 0 0.01 3 -G 200 4 40 400 5 CD 600 6 5 BB IO, Average Forward Current (A) f=1MHz Applied 4VDC reverse voltage CD CJ, Junction Capacitance (pF) 160 1 0 0.1 1 10 100 20 VR, Reverse Voltage (V) 40 60 80 100 120 140 160 TA, Ambient Temperature (°C) Fig.5 Non-repetitive Forward Surge Current IFSM, Peak Forward Surge Current (A) 150 TJ=25°C 8.3ms single half sine wave, JEDEC method 120 90 60 30 0 1 10 100 Number of Cycles at 60Hz REV:A Page 2 QW-BB028 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers SMD Diodes Specialist Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SMB SMB SYMBOL A B C d D D1 D2 (mm) 3.81 ± 0.10 5.74 ± 0.10 2.24 ± 0.10 1.50 ± 0.10 330 ± 2.00 50.0 MIN. 13.0 ± 0.50 (inch) 0.150 ± 0.04 0.226 ± 0.04 0.088 ± 0.04 0.059 ± 0.004 12.99 ± 0.079 1.969 MIN. 0.512 ± 0.020 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 5.50 ± 0.10 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.23 ± 0.10 12.0 ± 0.30 18.0 ± 1.00 (inch) 0.689 ± 0.004 0.217 ± 0.004 0.315± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.004 0.472 ± 0.012 0.709 ± 0.040 REV:A Page 3 QW-BB028 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers SMD Diodes Specialist Marking Code Marking Code Part Number CDBB540-G SS54 CDBB560-G SS56 XXX SS510 CDBB5100-G Suggested PAD Layout SMB SIZE A (mm) (inch) 4.50 0.177 D A B 1.50 0.059 C 3.60 0.142 D 6.00 0.236 E 3.00 0.118 E C B Standard Package Qty per Reel Reel Size (Pcs) (inch) Case Type SMB 4000 13 REV:A Page 4 QW-BB028 Comchip Technology CO., LTD.