Comchip CDBB5100-G Smd schottky barrier rectifier Datasheet

SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBB540-G Thru. CDBB5100-G
Reverse Voltage: 40,60,100 Volts
Forward Current: 5.0 Amp
RoHS Device
Features
-Batch process design, excellent powe
dissipation offers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
SMB-1
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.168(4.2)
0.150(3.8)
Mechanical data
-Case: Molded plastic, JEDEC SMB.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.09 gram(approx.).
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings(at TA=25°C unless otherwise noted)
Symbol
CDBB540-G
CDBB560-G
CDBB5100-G
Unit
Repetitive peak reverse voltage
VRRM
40
60
100
V
Maximum RMS voltage
VRMS
28
42
70
V
Continuous reverse voltage
VR
40
60
100
V
Maximum forward voltage @IF=1.0A
VF
0.55
0.75
0.85
V
Forward rectified current
IO
5.0
A
IFSM
150
A
Parameter
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
@TA=25°C
@TA=125°C
Typ. thermal resistance, junction to ambient air
0.5
IR
mA
50
RθJA
12
°C/W
Typ. diode junction capacitance (Note 1)
CJ
380
pF
Operating junction temperature
TJ
Storage temperature
-55 to +125
TSTG
-55 to +150
-65 to +175
°C
°C
Note 1: f=1MHz and applied 4V DC reverse voltage.
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Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Rating and Characteristic Curves (CDBB540-G Thru. CDBB5100-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
56
BB
CD
1
TJ=75°C
0.1
BB
5
10
10
0-
G
CD
ΙF, Forward Current (A)
IR, Reverse Current (mA)
40
-G
100
C
1
B5
DB
00
-G
1
0.1
TJ=25°C
0.01
0.01
0
40
80
120
0.1
200
0.5
0.9
1.3
2.1
1.7
Percent of Rated Peak Reverse Voltage (%)
VF, Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Current Derating Curve
7
1400
1200
1000
800
5
BB
60
.C
-G
1
B5
DB
2
00
-G
0
0.01
3
-G
200
4
40
400
5
CD
600
6
5
BB
IO, Average Forward Current (A)
f=1MHz
Applied 4VDC
reverse voltage
CD
CJ, Junction Capacitance (pF)
160
1
0
0.1
1
10
100
20
VR, Reverse Voltage (V)
40
60
80
100
120
140
160
TA, Ambient Temperature (°C)
Fig.5 Non-repetitive Forward
Surge Current
IFSM, Peak Forward Surge Current (A)
150
TJ=25°C
8.3ms single half sine
wave, JEDEC method
120
90
60
30
0
1
10
100
Number of Cycles at 60Hz
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Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SMB
SMB
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.81 ± 0.10
5.74 ± 0.10
2.24 ± 0.10
1.50 ± 0.10
330 ± 2.00
50.0 MIN.
13.0 ± 0.50
(inch)
0.150 ± 0.04
0.226 ± 0.04
0.088 ± 0.04
0.059 ± 0.004
12.99 ± 0.079
1.969 MIN.
0.512 ± 0.020
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
5.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.23 ± 0.10
12.0 ± 0.30
18.0 ± 1.00
(inch)
0.689 ± 0.004
0.217 ± 0.004
0.315± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.004
0.472 ± 0.012
0.709 ± 0.040
REV:A
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Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Marking Code
Marking Code
Part Number
CDBB540-G
SS54
CDBB560-G
SS56
XXX
SS510
CDBB5100-G
Suggested PAD Layout
SMB
SIZE
A
(mm)
(inch)
4.50
0.177
D
A
B
1.50
0.059
C
3.60
0.142
D
6.00
0.236
E
3.00
0.118
E
C
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
Case Type
SMB
4000
13
REV:A
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Comchip Technology CO., LTD.
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