AP9960GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 40V RDS(ON) 16mΩ ID G 42A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9960GJ) are available for low-profile applications. GD S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 42 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 26 A 195 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 45 W Linear Derating Factor 0.36 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 201007042 AP9960GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 40 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - - 16 mΩ VGS=4.5V, ID=18A - - 25 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=20A - 30 - S VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=150 C) VDS=32V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= ±20V - - ±100 nA ID=20A - 18 - nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (T j=25 C) o IGSS 2 VGS=0V, ID=250uA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 12 - nC VDS=20V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=20A - 110 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 23 - ns tf Fall Time RD=1Ω - 10 - ns Ciss Input Capacitance VGS=0V - 1500 - pF Coss Output Capacitance VDS=25V - 250 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=20A, VGS=0V - 22 - Qrr Reverse Recovery Charge dI/dt = 100A/us - 27.4 - ns nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9960GH/J 120 200 10V 8.0V o 150 ID , Drain Current (A) ID , Drain Current (A) T C =25 C 6.0V 100 50 80 6.0V 40 V G =4.0V V G =4.0V 0 0 0.0 1.0 2.0 3.0 4.0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 1.8 I D =20A V G =10V Normalized R DS(ON) I D =20A T C =25 ℃ 40 RDS(ON) (mΩ ) 10V 8.0V o T C =150 C 30 20 1.4 1.0 10 0 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 100 2.0 o T j =150 C VGS(th) (V) IS(A) 10 T j =25 o C 1.5 1 1.0 0 0.5 0.0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 25 100 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 175 AP9960GH/J f=1.0MHz 14 10000 I D =20A V DS =12V V DS =16V V DS =20V 10 8 C (pF) VGS , Gate to Source Voltage (V) 12 C iss 1000 6 4 C oss C rss 2 100 0 0 10 20 30 40 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 ID (A) 10us 100us 10 1ms o T c =25 C Single Pulse 10ms 100ms 1 Normalized Thermal Response (R thjc) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse PDM t Duty factor = t/T Peak Tj = P DM x Rthjc + Tc T 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q