CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Gain & RLoss (dB) 25 20 Main Features 15 10 Performances : 22-26GHz 29dBm output power 20 dB ± 1.5dB gain DC power consumption, 600mA @ 6V Chip size : 3.27 x 2.47 x 0.10 mm 5 0 -5 S22 -10 -15 S11 -20 -25 15 20 25 30 Frequency Typical on Wafer Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Fop Operating frequency range 22 G Small signal gain 18 20 dB P1dB Output power at 1dB gain compression 28 29 dBm Id Bias current 600 Max Unit 26 GHz 900 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA50930129 -09 May-00 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 22-26GHz High Power Amplifier CHA5093 Electrical Characteristics Tamb = +25°C, Vd = 6V Symbol Fop G ∆G Parameter Min Operating frequency range (1) 22 Small signal gain (1) 18 Small signal gain flatness (1) Is Reverse isolation (1) P1dB Pulsed output power at 1dB compression (1) 28 Typ Max Unit 26 GHz 20 dB ±1.5 dB 50 dB 29 dBm 29.5 dBm P03 Output power at 3dB gain compression IP3 3rd order intercept point (2) 40 dBm PAE Power added efficiency at 1dB comp. 19 % VSWRin Input VSWR 2.3:1 VSWRout Output VSWR 2.3:1 Tj Junction temperature for 80°C backside 170 Id Bias current 600 °C 900 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 6 V Id Drain bias current 1200 mA Vg Gate bias voltage -2.5 to +0.4 V Vgd Negative gate drain voltage ( = Vg - Vd) -8 V Pin Maximum peak input power overdrive (2) +12 dBm Ta Operating temperature range -40 to +80 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA50930129 -09 May-00 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 22-26GHz High Power Amplifier CHA5093 Typical On Wafer Scattering Parameters Bias Conditions : Vd = +2V, Vg = -0.1V Freq GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 dB -0,59 -0,38 -0,57 -0,92 -1,81 -3,56 -6,86 -11,49 -11,08 -7,5 -5,5 -4,65 -4,49 -4,54 -5,01 -5,95 -7,54 -10,08 -13,87 -18,32 -21,53 -13,29 -10,62 -12,11 -23,82 -11,02 -5,56 -3,27 -2,09 -1,33 -0,78 -0,62 -0,41 -0,4 -0,38 -0,37 -0,42 -0,6 -0,71 -0,75 S11 /° 169,8 158,6 146,5 131,5 112,8 88,7 56,1 2 -75,8 -122,7 -150,3 -170,2 174,7 161,9 149 137,3 125,2 116,3 114,1 120,1 -166,1 -152,4 -174,2 161,8 -175,5 -104,7 -127,3 -144,5 -159,2 -170,7 178,1 168,3 159,5 151,3 144 136,5 129,1 121,2 114,6 106,8 Ref. : DSCHA50930129 -09 May-00 S12 dB -83,89 -94,7 -90,83 -87,53 -91,02 -88,88 -93,06 -89,41 -77,69 -73,31 -67,65 -64,52 -60,09 -57,15 -54,69 -52,41 -54,05 -54,29 -53,07 -55,69 -55,41 -53,16 -56,67 -64,73 -61,49 -55,53 -53,1 -49,46 -49,07 -47,23 -47,06 -50,11 -55,89 -61,66 -66,3 -59,52 -57,63 -46,51 -45,63 -50,77 S12 /° -9,2 -97,3 40,1 -65,9 -172,1 -109,5 -18,3 -123,6 -57,9 -105,8 -103,5 -128,8 -138,2 -165,4 165,9 131,9 103,3 99,6 70 61,4 49,3 28,6 -23,7 -101,8 109,9 89,3 73 59,2 21,2 2,2 -20,4 -56,1 -68,4 -95,4 -14,3 15,6 -6 1,1 -40,8 -87,7 S21 dB -51,47 -66,17 -62,89 -55,62 -54,96 -49,83 -45,68 -28,33 -13,56 -4,53 2,35 9,41 15,11 13,29 12,35 13,33 15,41 17,95 20,07 21,69 22,71 23,28 23,74 23,55 22,98 21,32 18,44 15,1 11,56 7,22 2,57 -2,99 -9,66 -22,01 -14,55 -14,65 -18,82 -23,23 -27,11 -29,94 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S21 /° 60 -14,6 156,2 -37,1 70,7 87,6 47 121,7 56,8 -7,7 -66,5 -125,1 147,6 74,3 33,4 -1,5 -38,2 -81,4 -128,3 179,9 128,5 77,4 24,1 -30,6 -88,4 -147 157,6 107,4 59,1 12,8 -29,9 -69,1 -104 -110,4 -69,1 -130,2 -168,4 162,3 137,4 111,9 S22 dB -0,31 -0,04 -0,04 -0,07 -0,08 -0,09 -0,1 -0,12 -0,2 -0,29 -0,45 -0,84 -1,9 -2,08 -2,48 -3,31 -4,38 -5,87 -7,16 -8,31 -9,09 -8,63 -8,36 -7,39 -6,07 -4,94 -4,11 -3,64 -3,14 -2,61 -2,29 -2,08 -1,96 -1,99 -1,86 -1,68 -1,73 -1,74 -1,8 -1,92 S22 /° -10,4 -22,2 -33,3 -44,6 -55,8 -66,9 -78,2 -90 -102,3 -114,9 -128,5 -143,5 -157 -168,6 174,5 155,3 133,5 109,1 81 49 15,1 -13,6 -36,8 -53 -67,6 -82,5 -97 -109,9 -121,3 -131,9 -143,6 -154,5 -165,5 -175,4 175,9 164,4 153,9 143,6 132 121,4 Specifications subject to change without notice 22-26GHz High Power Amplifier CHA5093 Typical on Wafer Measurements Bias Conditions: Vd=2V, Vg= -0.2V, Id= 400mA Gain & RLoss (dB) 25 20 15 10 5 0 -5 S22 -10 S11 -15 -20 -25 15 20 25 30 Frequency Typical on Jig Measurements Bias conditions: Vd=6V, Vg =-0.4V, Id=580mA Gain & Rloss. ( dB) 24 20 16 12 8 4 0 -4 -8 S22 -12 -16 S11 -20 -24 -28 -32 20 22 24 26 28 30 Frequency (GHz) Ref. : DSCHA50930129 -09 May-00 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 22-26GHz High Power Amplifier CHA5093 Typical on Jig Measurements Bias conditions: Vd=6V, Vg =-0.4V, Id=600mA 30 28 26 Gain (dB) 24 26GHz 22 24GHz 20 27GHz 18 22GHz 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output power (dBm) 40 Freq= 24GHz Output power (dBm) 32 24 16 8 0 -8 3rd interm. (dBm)* -16 -24 -32 -40 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 Input power (dBm) * It is a standard 2 tones measurement with an input signal F1 + F2, (F2 = F1 + 10MHz). The third order is measured at the 2F2-F1 frequency. Ref. : DSCHA50930129 -09 May-00 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 22-26GHz High Power Amplifier CHA5093 Chip Assembly and Mechanical Data To Vg1,2,3 DC Gate supply feed 1nF To Vd3 DC Drain supply feed 100pF 100pF Out In 100pF 100pF To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA50930129 -09 May-00 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 22-26GHz High Power Amplifier CHA5093 Application note The given DC Bias condition in table or curves are for optimum output power. To optimize the gain a drain voltage of 5V could be apply. With this biasing point , the output power at 1dB compression decreases by around 1dBm. The curves below show typical jig measurements versus drain & gate voltages. 24 22 20 18 16 14 12 10 8 Gain with Vd=5V, Vg=-0,4V 6 Gain with Vd=5V, Vg=-0,2V 4 Gain with Vd=6V, Vg=-0,4V 2 0 20 22 24 26 28 30 Frequency (GHz) Ref. : DSCHA50930129 -09 May-00 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 22-26GHz High Power Amplifier CHA5093 Ordering Information Chip form : CHA5093-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA50930129 -09 May-00 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice