UMS CHA5093-99F/00 22-26ghz high power amplifier Datasheet

CHA5093
22-26GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5093 is a high gain three-stage
monolithic high power amplifier. It is designed
for a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Gain & RLoss (dB)
25
20
Main Features
15
10
Performances : 22-26GHz
29dBm output power
20 dB ± 1.5dB gain
DC power consumption, 600mA @ 6V
Chip size : 3.27 x 2.47 x 0.10 mm
5
0
-5
S22
-10
-15
S11
-20
-25
15
20
25
30
Frequency
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Typ
Fop
Operating frequency range
22
G
Small signal gain
18
20
dB
P1dB
Output power at 1dB gain compression
28
29
dBm
Id
Bias current
600
Max
Unit
26
GHz
900
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50930129 -09 May-00
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
22-26GHz High Power Amplifier
CHA5093
Electrical Characteristics
Tamb = +25°C, Vd = 6V
Symbol
Fop
G
∆G
Parameter
Min
Operating frequency range (1)
22
Small signal gain (1)
18
Small signal gain flatness (1)
Is
Reverse isolation (1)
P1dB
Pulsed output power at 1dB compression (1)
28
Typ
Max
Unit
26
GHz
20
dB
±1.5
dB
50
dB
29
dBm
29.5
dBm
P03
Output power at 3dB gain compression
IP3
3rd order intercept point (2)
40
dBm
PAE
Power added efficiency at 1dB comp.
19
%
VSWRin
Input VSWR
2.3:1
VSWRout Output VSWR
2.3:1
Tj
Junction temperature for 80°C backside
170
Id
Bias current
600
°C
900
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6
V
Id
Drain bias current
1200
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vgd
Negative gate drain voltage ( = Vg - Vd)
-8
V
Pin
Maximum peak input power overdrive (2)
+12
dBm
Ta
Operating temperature range
-40 to +80
°C
Storage temperature range
-55 to +155
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA50930129 -09 May-00
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
22-26GHz High Power Amplifier
CHA5093
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +2V, Vg = -0.1V
Freq
GHz
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
S11
dB
-0,59
-0,38
-0,57
-0,92
-1,81
-3,56
-6,86
-11,49
-11,08
-7,5
-5,5
-4,65
-4,49
-4,54
-5,01
-5,95
-7,54
-10,08
-13,87
-18,32
-21,53
-13,29
-10,62
-12,11
-23,82
-11,02
-5,56
-3,27
-2,09
-1,33
-0,78
-0,62
-0,41
-0,4
-0,38
-0,37
-0,42
-0,6
-0,71
-0,75
S11
/°
169,8
158,6
146,5
131,5
112,8
88,7
56,1
2
-75,8
-122,7
-150,3
-170,2
174,7
161,9
149
137,3
125,2
116,3
114,1
120,1
-166,1
-152,4
-174,2
161,8
-175,5
-104,7
-127,3
-144,5
-159,2
-170,7
178,1
168,3
159,5
151,3
144
136,5
129,1
121,2
114,6
106,8
Ref. : DSCHA50930129 -09 May-00
S12
dB
-83,89
-94,7
-90,83
-87,53
-91,02
-88,88
-93,06
-89,41
-77,69
-73,31
-67,65
-64,52
-60,09
-57,15
-54,69
-52,41
-54,05
-54,29
-53,07
-55,69
-55,41
-53,16
-56,67
-64,73
-61,49
-55,53
-53,1
-49,46
-49,07
-47,23
-47,06
-50,11
-55,89
-61,66
-66,3
-59,52
-57,63
-46,51
-45,63
-50,77
S12
/°
-9,2
-97,3
40,1
-65,9
-172,1
-109,5
-18,3
-123,6
-57,9
-105,8
-103,5
-128,8
-138,2
-165,4
165,9
131,9
103,3
99,6
70
61,4
49,3
28,6
-23,7
-101,8
109,9
89,3
73
59,2
21,2
2,2
-20,4
-56,1
-68,4
-95,4
-14,3
15,6
-6
1,1
-40,8
-87,7
S21
dB
-51,47
-66,17
-62,89
-55,62
-54,96
-49,83
-45,68
-28,33
-13,56
-4,53
2,35
9,41
15,11
13,29
12,35
13,33
15,41
17,95
20,07
21,69
22,71
23,28
23,74
23,55
22,98
21,32
18,44
15,1
11,56
7,22
2,57
-2,99
-9,66
-22,01
-14,55
-14,65
-18,82
-23,23
-27,11
-29,94
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S21
/°
60
-14,6
156,2
-37,1
70,7
87,6
47
121,7
56,8
-7,7
-66,5
-125,1
147,6
74,3
33,4
-1,5
-38,2
-81,4
-128,3
179,9
128,5
77,4
24,1
-30,6
-88,4
-147
157,6
107,4
59,1
12,8
-29,9
-69,1
-104
-110,4
-69,1
-130,2
-168,4
162,3
137,4
111,9
S22
dB
-0,31
-0,04
-0,04
-0,07
-0,08
-0,09
-0,1
-0,12
-0,2
-0,29
-0,45
-0,84
-1,9
-2,08
-2,48
-3,31
-4,38
-5,87
-7,16
-8,31
-9,09
-8,63
-8,36
-7,39
-6,07
-4,94
-4,11
-3,64
-3,14
-2,61
-2,29
-2,08
-1,96
-1,99
-1,86
-1,68
-1,73
-1,74
-1,8
-1,92
S22
/°
-10,4
-22,2
-33,3
-44,6
-55,8
-66,9
-78,2
-90
-102,3
-114,9
-128,5
-143,5
-157
-168,6
174,5
155,3
133,5
109,1
81
49
15,1
-13,6
-36,8
-53
-67,6
-82,5
-97
-109,9
-121,3
-131,9
-143,6
-154,5
-165,5
-175,4
175,9
164,4
153,9
143,6
132
121,4
Specifications subject to change without notice
22-26GHz High Power Amplifier
CHA5093
Typical on Wafer Measurements
Bias Conditions:
Vd=2V, Vg= -0.2V, Id= 400mA
Gain & RLoss (dB)
25
20
15
10
5
0
-5
S22
-10
S11
-15
-20
-25
15
20
25
30
Frequency
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg =-0.4V, Id=580mA
Gain & Rloss. ( dB)
24
20
16
12
8
4
0
-4
-8
S22
-12
-16
S11
-20
-24
-28
-32
20
22
24
26
28
30
Frequency (GHz)
Ref. : DSCHA50930129 -09 May-00
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
22-26GHz High Power Amplifier
CHA5093
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg =-0.4V, Id=600mA
30
28
26
Gain (dB)
24
26GHz
22
24GHz
20
27GHz
18
22GHz
16
14
12
10
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Output power (dBm)
40
Freq= 24GHz
Output power (dBm)
32
24
16
8
0
-8
3rd interm. (dBm)*
-16
-24
-32
-40
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
Input power (dBm)
* It is a standard 2 tones measurement with an input signal F1 + F2,
(F2 = F1 + 10MHz). The third order is measured at the 2F2-F1 frequency.
Ref. : DSCHA50930129 -09 May-00
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
22-26GHz High Power Amplifier
CHA5093
Chip Assembly and Mechanical Data
To Vg1,2,3 DC Gate supply feed
1nF
To Vd3 DC Drain supply feed
100pF
100pF
Out
In
100pF
100pF
To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100µm. All dimensions are in micrometers )
Ref. : DSCHA50930129 -09 May-00
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
22-26GHz High Power Amplifier
CHA5093
Application note
The given DC Bias condition in table or curves are for optimum output power.
To optimize the gain a drain voltage of 5V could be apply. With this biasing point , the
output power at 1dB compression decreases by around 1dBm.
The curves below show typical jig measurements versus drain & gate voltages.
24
22
20
18
16
14
12
10
8
Gain with Vd=5V, Vg=-0,4V
6
Gain with Vd=5V, Vg=-0,2V
4
Gain with Vd=6V, Vg=-0,4V
2
0
20
22
24
26
28
30
Frequency (GHz)
Ref. : DSCHA50930129 -09 May-00
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
22-26GHz High Power Amplifier
CHA5093
Ordering Information
Chip form
:
CHA5093-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for
use as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA50930129 -09 May-00
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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