AH125 ½ W High Linearity InGaP HBT Amplifier Applications • Repeaters • Mobile Infrastructure • LTE / WCDMA / EDGE / CDMA 3-pin SOT-89 Package Product Features • • • • • • • • • Functional Block Diagram 400 − 3600 MHz +28 dBm P1dB +45 dBm Output IP3 16.2 dB Gain @ 2140 MHz 150 mA current draw +5 V Single Supply MTTF > 100 Years Lead-free/Green/RoHS-compliant SOT-89 Package Class 2 HBM ESD rating (>2kV) General Description GND 4 1 2 3 RF IN GND RF OUT Pin Configuration The AH125 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +45 dBm OIP3 and +28 dBm of compressed 1dB power while drawing 150 mA current. The AH125 is available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. Pin No. Symbol 1 Vbias 3 RFin 2,4 RFout/Vcc The AH125 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. Internal biasing allows the AH125 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations or repeaters. Not Recommended for New Designs Recommended Replacement Part: TQP7M9102 Ordering Information Part No. Description ½W High Linearity Amplifier AH125-89G Standard T/R size = 1000 pieces on a 7” reel. Datasheet: Rev B 05-02-13 © 2013 TriQuint - 1 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Parameter Storage Temperature RF Input Power, CW, 50Ω, T=25°C Device Voltage Rating −65 to 150°C Input P10dB +6 V Case Temperature 6 Tj for >10 hours MTTF Min −40 Typ Max Units +85 +200 °C °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss W-CDMA Channel Power Output P1dB Output IP3 Noise Figure Quiescent Collector Current Thermal Resistance, θJC Conditions Min 400 14 At -50dBc ACLR, Note 1 Pout=+12 dBm/tone, Δf=1 MHz +41 130 Typ 2140 16.2 12 12 +19 +28 +45 4.4 150 Junction to case Max 3600 18 170 64.3 Units MHz MHz dB dB dB dBm dBm dBm dB mA °C / W Performance Summary Table Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Parameter Conditions W-CDMA Channel Power At -50 dBc ACLR, Note 1 Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure 920 20 20 9.9 Note 2 Typical 1960 17 16 9 2140 16.2 12 12 Units MHz dB dB dB +19 +19 +19 dBm +28.1 +47 7.7 +27.8 +47 4.6 +28.0 +45 4.4 dBm dBm dB Notes: 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz. 2. OIP3 is measured with two tones separated by 1 MHz. Measured at Pout=+17dBm/tone for 900 MHz, +14 dBm/tone for 1960 MHz, and +12 dBm/tone for 2140 MHz. Datasheet: Rev B 05-02-13 © 2013 TriQuint - 2 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Device Characterization Data Note: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. S-Parameters Test Conditions: VDEVICE=+5 V, ICQ=150 mA, T=+25°C, unmatched 50 ohm system Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 -2.51 -6.65 -0.47 -0.50 -0.56 -0.65 -0.78 -0.82 -0.93 -0.93 -0.94 -0.91 -0.93 -0.90 -0.96 -1.07 -1.18 -1.18 -1.11 176.96 -179.55 -166.72 179.58 173.91 170.52 166.87 163.90 161.34 157.61 154.21 151.59 149.24 145.94 143.87 139.90 136.50 133.80 132.39 19.12 16.82 19.86 16.95 15.09 13.68 12.37 11.21 10.11 9.40 8.47 7.66 7.06 6.70 6.12 5.74 5.09 4.62 4.12 153.71 171.45 129.11 110.14 99.64 91.32 83.49 76.80 71.12 64.93 58.83 53.42 49.26 43.87 39.45 34.00 29.36 24.20 20.26 -33.85 -41.51 -32.54 -32.11 -32.29 -32.15 -32.04 -32.11 -31.97 -31.94 -31.97 -31.80 -32.04 -31.63 -31.18 -31.37 -31.25 -31.12 -31.25 -7.98 -51.50 37.90 15.12 6.66 2.53 -2.50 -4.03 -7.89 -9.93 -10.87 -14.20 -16.18 -16.91 -18.50 -23.47 -20.88 -27.12 -26.33 -4.58 -3.50 -6.46 -4.57 -4.14 -3.89 -3.71 -3.64 -3.70 -3.64 -3.54 -3.48 -3.67 -3.72 -3.54 -3.52 -3.70 -3.72 -3.64 -168.55 167.66 -173.90 -177.11 177.58 173.40 169.83 167.10 164.08 160.19 156.60 153.92 152.18 147.67 143.63 141.32 140.24 135.07 130.47 Datasheet: Rev B 05-02-13 © 2013 TriQuint - 3 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier R4 869-960 MHz Application Circuit C8 R1 R2 C9 C1 C10 L1 C3 C2 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω jumpers can be replaced with copper trace in target application. 4. The edge of R2 is placed at 280 mil from AH125 RFout pin. (14.3o at 920 MHz) 5. The edge of C9 is placed 35 mil from the edge of R2. (1.8o at 920 MHz) 6. The edge of R1 is placed at 100 mil from AH125 RFin pin. (5.1o at 920 MHz) 7. The edge of C10 is placed 130 mil from the edge of R1. (6.6o at 920 MHz) Typical Performance 869-960 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Frequency Gain Input Return Loss Output Return Loss ACLR Output P1dB Output IP3 Noise Figure 869 Conditions Pout = +18 dBm, Note 1 Pout=+17 dBm/tone, Δf=1 MHz 20 14 10 -52 +27.4 +44 7.9 920 20 20 9.9 -52.5 +28.1 +47 7.7 960 20 22 9.9 -52 +27.9 +49 7.5 MHz dB dB dB dBc dBm dBm dB Notes: 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz. Datasheet: Rev B 05-02-13 © 2013 TriQuint - 4 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Performance Plots 869-960 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Gain vs. Frequency 22 -5 19 |S22| (dB) |S11| (dB) 20 -10 -15 +25°C +85°C -40°C 18 840 860 880 900 920 940 Frequency (MHz) 960 -25 840 980 Gain vs. Temperature 22 21 880 -40°C 900 920 940 Frequency (MHz) 960 -25 840 980 TLEAD=+25°C -55 -60 880 +85°C 900 920 940 Frequency (MHz) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -45 -50 860 +25°C 960 980 ACLR vs. Output Power over Temperature -40 ACLR (dBc) ACLR (dBc) -15 +85°C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -45 |S21| (dB) 860 +25°C ACLR vs. Output Power over Frequency -40 20 -10 -20 -20 -40°C Output Return Loss vs. Frequency 0 -5 21 |S21| (dB) Input Return Loss vs. Frequency 0 Freq.=920 MHz -50 -55 -60 19 869 MHz 920 MHz -65 -65 960 MHz 869 MHz 18 -40 -15 10 35 Temperature (°C) 60 85 960 MHz -40°C 15 Freq.=920 MHz 1 MHz tone spacing 14 20 11 12 13 14 15 16 Output Power per Tone (dBm) 17 18 11 -40°C 17 860 18 Output Power (dBm) 26 25 869 MHz 920 MHz -40°C 960 MHz +25°C +85°C 10 12 14 16 18 Output Power (dBm) 20 940 960 26 24 22 20 920 MHz 960 MHz 18 860 22 900 920 Frequency (MHz) 869 MHz 24 130 880 28 27 140 +85°C 30 28 P1dB (dBm) Icq (mA) 150 +25°C Output Power vs. Input Power P1dB vs. Frequency 29 160 45 960 MHz 12 16 13 14 15 Output Power per Tone (dBm) 30 170 OIP3 vs. Frequency 35 10 Current vs. Output Power 180 20 40 920 MHz 869 MHz 35 10 19 1 MHz tone spacing Pout=+17dBm per tone 45 +85°C 35 +85°C 16 17 18 Output Power (dBm) 50 40 +25°C -40°C 15 55 OIP3 (dBm) OIP3 (dBm) 40 19 TLEAD=+25°C 1 MHz tone spacing 50 45 16 17 18 Output Power (dBm) OIP3 vs. Pout/Tone over Frequency 55 50 +25°C -70 14 OIP3 vs. Pout/Tone over Temperature 55 OIP3 (dBm) 920 MHz -70 880 900 920 Frequency (MHz) 940 960 0 1 2 3 4 5 6 Input Power (dBm) 7 8 9 Noise Figure vs. Frequency 10.0 NF (dB) 9.0 8.0 7.0 -40°C +25°C +85°C 6.0 860 880 900 920 940 960 980 1000 Frequency (MHz) Datasheet: Rev B 05-02-13 © 2013 TriQuint - 5 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier R4 1805-1880 MHz Application Circuit C8 C4 C3 R1 C9 C20 R20 C10 C1 L1 Trace Cut R2 C2 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 250 mil from AH125 RFout pin. (25.5 o at 1845 MHz) 5. The edge of R1 is placed against the edge of C10. 6. The edge of C10 is placed at 30 mil from AH125 RFin pin. (3.1 o at 1845 MHz) Typical Performance 1805-1880 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Frequency 1805 1842 1880 MHz Input Return Loss 9.5 16.5 17.0 dB Output Return Loss 9.4 8.4 7.8 dB -51 -51 -49 dBc +28 +27.9 +27.8 dBm +44 +45 +43.5 dBm Conditions Gain ACLR 17.8 Pout = +18 dBm, Note 1 Output P1dB Output IP3 Pout=+14 dBm/tone, Δf=1 MHz 18.2 18.1 dB Notes: 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB at 0.01% Probability, 3.84 MHz. Datasheet: Rev B 05-02-13 © 2013 TriQuint - 6 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Performance Plots 1805-1880 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Gain vs. Frequency 20 TLEAD=+25°C 1 MHz tone spacing 17 16 15 1800 1820 1840 1860 Frequency (MHz) 1880 1900 -15 -20 S11 -30 1.80 1.82 1.84 1.86 Frequency (MHz) P1dB (dBm) OIP3 (dBm) 29 44 42 40 12 14 16 12 13 14 15 1842 MHz 16 17 1880 MHz 18 19 20 21 Output Power (dBm) P1dB vs. Frequency TLEAD=+25°C 1 MHz tone spacing 28 27 26 18 24 1820 Output Power/Tone (dBm) Datasheet: Rev B 05-02-13 © 2013 TriQuint 1.90 11 25 1880 MHz 38 10 1.88 30 TLEAD=+25°C 1 MHz tone spacing 8 1805 MHz -65 OIP3 vs. Output Power per Tone 1842 MHz -55 S22 48 1805 MHz TLEAD=+25°C -50 -60 -25 46 W-CDMA 3GPP TM +64DPCH PAR=10.2dB @ 0.01% probability 3.84 MHz BW -45 -10 ACLR (dBc) Return Loss (dB) 18 -40 TLEAD=+25°C 1 MHz tone spacing -5 |S21| (dB) 19 ACLR vs. Output Power Return Loss vs. Frequency 0 - 7 of 14 - 1830 1840 1850 1860 Frequency (MHz) 1870 1880 Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier R4 2110-2170 MHz Application Circuit R1 C9 C1 C10 L1 C8 C4 C3 R2 C2 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 120 mils from AH125 RFout pin. (14.2 o at 2140 MHz) 5. The edge of C2 is placed at 280 mils from the edge of C9. (33.2 o at 2140 MHz) 6. The edge of C10 is placed at 60 mils from AH125 RFin pin. (7.1 o at 2140 MHz) 7. The edge of R1 is placed 10 mils from the edge of C10. (1.2 o at 2140 MHz) Typical Performance 2110-2170 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Frequency 2110 2140 2170 MHz Input Return Loss 10 12 15 dB Output Return Loss 13 12 11 dB -52 -52 -52 dBc +28 +28 +28 dBm +49 +45 +47 dBm 4.3 4.4 4.4 dB Conditions Gain ACLR 16.1 Pout = +18 dBm Output P1dB Output IP3 Noise Figure Pout=+12 dBm/tone, Δf=1 MHz 16.2 16.3 dB Notes: 1. TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW Datasheet: Rev B 05-02-13 © 2013 TriQuint - 8 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Performance Plots 2110-2170 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Gain vs. Frequency 18 |S22| (dB) |S11| (dB) -10 -15 -15 15 14 2.10 2.12 +25°C +85°C 2.14 2.16 Frequency (GHz) -40°C 2.18 -25 2.10 2.20 Gain vs. Temperature 18 2.18 -25 2.10 2.20 TLEAD=+25°C -55 -60 2110 MHz 2140 MHz 2110 MHz 2140 MHz -15 35 10 Temperature (°C) 60 12 OIP3 vs. Output Power/Tone 55 45 40 2110 MHz 2140 MHz 9 10 11 12 13 14 15 Pout/Tone (dBm) Datasheet: Rev B 05-02-13 © 2013 TriQuint 16 18 20 17 18 +25°C +85°C 12 14 16 Output Power (dBm) 18 20 Noise Figure vs. Frequency 7 TLEAD=+25°C 6 28 27 26 24 2.11 10 8 5 4 3 2 25 2170 MHz 35 8 14 16 Output Power (dBm) 29 P1dB (dBm) 50 -55 -40°C P1dB vs. Frequency 30 TLEAD=+25°C 1 MHz tone spacing 2.20 -65 10 85 2.18 -50 2170 MHz -65 -40 2.14 2.16 Frequency (GHz) -60 2170 MHz 14 +85°C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.3 dB @ 0.01% Probability 3.84 MHz BW -45 -50 2.12 +25°C ACLR vs. Output Power -40 ACLR (dBc) ACLR (dBc) 15 -40°C +85°C 2.14 2.16 Frequency (GHz) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.3 dB @ 0.01% Probability 3.84 MHz BW -45 16 2.12 +25°C ACLR vs. Output Power -40 17 OIP3 (dBm) -20 -20 -40°C NF (dB) |S21| (dB) -5 -10 16 Output Return Loss 0 -5 17 |S21| (dB) Input Return Loss 0 1 2.12 2.13 2.14 2.15 Frequency (GHz) - 9 of 14 - 2.16 2.17 -40°C 0 2.10 2.12 +25°C 2.14 2.16 Frequency (GHz) +85°C 2.18 2.20 Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier R4 2500-2700 MHz Application Circuit R1 R2 C9 C1 C10 L1 C8 C4 C3 C2 Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω jumpers can be replaced with copper trace in target application. 4. Distance from side edge of C10 to side edge of U1 pin 1 is 55 mils (7.9° at 2600 MHz). 5. Distance from end edge of R1 to side edge of U1 pin 1 is 110 mils (15.8° at 2600 MHz). 6. Distance from side edge of C9 to side edge of U1 pin 3 is 90 mils (13.0° at 2600 MHz). VCC R4 0 Ohms C3 22pF L1 RF Input J1 C1 0 Ohms R1 Z= 50 Ohm L=55 mils 1pF Z= 50 Ohm L=55 mils 1 3 U1 Z= 50 Ohm L=90 mils 18nH 0805CS R1 R2 0 Ohms C9 0.6pF 2 C10 0.8pF C8 1uF C4 1000pF RF Output J2 22pF AH125-89PCB2600 Typical Performance 2500-2700 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Frequency Conditions Gain Output Return Loss Pout = +19 dBm Output P1dB Output IP3 2600 2700 MHz 9.5 13.1 12.9 dB 9.4 8.7 8.2 dB 1.5 1.25 1.3 % +28 +28 +28 dBm +49 +48 +47 dBm 13.9 Input Return Loss EVM 2500 Pout=+16 dBm/tone, Δf=1 MHz 14.0 13.7 dB Notes: 1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 sub-channels, 5 MHz Carrier BW. Datasheet: Rev B 05-02-13 © 2013 TriQuint - 10 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Performance Plots 2500-2700 MHz Test conditions unless otherwise noted: VSUPPLY=+5 V, ICQ=150 mA (typ.), Temp= +25°C, tuned application circuit Gain vs. Frequency 15 Return Loss vs. Frequency 0 TLEAD=+25°C 13 12 11 10 2.40 2.50 2.60 Frequency (GHz) 2.70 -10 -15 -20 2.40 802.16-2004 O-FDMA, 64QAM-1/2 1024-FFT, 20 symbols and 30 subchannels 5 MHz Carrier BW 2.50 2.60 Frequency (GHz) 2 S22 2.5 GHz 0 2.80 12 2 16 18 2.6 GHz 20 2.7 GHz 22 OIP3 vs. Output Power/Tone TLEAD=+25°C 1 MHz tone spacing 50 3 14 Output Power (dBm) TLEAD=+25°C 45 40 35 1 2.5 GHz 0 12 14 16 18 2.6 GHz 20 2.5 GHz 2.7 GHz 2.6 GHz 2.7 GHz 30 22 10 Output Power (dBm) Datasheet: Rev B 05-02-13 © 2013 TriQuint 2.70 55 OIP3 (dBm) 4 3 1 S11 EVM vs. Output Power 5 EVM (%) 2.80 802.16-2004 O-FDMA, 64QAM-1/2 T =+25°C 1024-FFT, 20 symbols and 30 subchannels LEAD 5 MHz Carrier BW 4 -5 EVM (%) Return Loss (dB) Gain (dB) 14 EVM vs. Output Power 5 TLEAD=+25°C - 11 of 14 - 12 14 16 18 Output Power/Tone (dBm) 20 22 Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Pin Configuration and Description GND 4 1 2 3 RF IN GND RF OUT Pin No. Symbol 1 RF IN RF Input. Requires external match for optimal performance. External DC Block required. Description 2, 4 GND RF/DC Ground Connection 3 RFout / Vcc RF Output. Requires external match for optimal performance. External DC Block and supply voltage is required. Evaluation Board PCB Information TriQuint PCB 1071363 Material and Stack-up Nelco N-4000-13 εr=3.7 typ. 0.014" 0.062" ± 0.006" Finished Board Thickness 1 oz. Cu top layer 1 oz. Cu inner layer Core 1 oz. Cu inner layer 0.014" Nelco N-4000-13 1 oz. Cu bottom layer 50 Ohm Lines: Width=28 mils Spacing=28 mils Datasheet: Rev B 05-02-13 © 2013 TriQuint - 12 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Package Marking and Dimensions The AH125 will be marked with an “AH125G” designator with a lot code marked below the part designator. The “Y” represents the last digit of the year the part was manufactured, the “XXX” is an auto-generated number, and “Z” refers to a wafer number in a batch. -YD (D1) D1 4 AH125G YXXX-Z 1 2 H 3 L B 2X B1 e 0.10 (0.004) e1 E1 E -Z- 3 PLACES 7`8 A C M T Z S YS -T- SYMBOL MIN NOM MAX A 1.40 .055 1.50 (.059) 1.60 (.063) B .44 (.017) .50 (.020) .56 (.022) B1 .36 (.014) .42 (.0165) .48 (.019) C .35 (.014) .40 (.016) .44 (.017) D 4.40 (.173) 4.50 (.177) 4.60 (.181) D1 1.62 (.064) 1.73 (.068) 1.83 (.072) E 2.29 (.090) 2.50 (.098) 2.60 (.102) E1 2.13 (.084) 2.20 (.087) 2.29 (.090) 1.50 BSC (.059) e 3.00 BSC (.118) e1 H 3.94 (.155) 4.10 (.161) 4.25 (.167) L .89 (.035) 1.10 (.043) 1.20 (.047) PCB Mounting Pattern Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. 5. All dimensions are in millimeters (inches). Angles are in degrees. Datasheet: Rev B 05-02-13 © 2013 TriQuint - 13 of 14 - Disclaimer: Subject to change without notice www.triquint.com AH125 ½ W High Linearity InGaP HBT Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Caution! ESD-Sensitive Device Package lead plating: NiPdAu ESD Rating: Value: Test: Standard: Class 2 2000V to <4000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ≥ 2000V min Charged Device Model (CDM) JEDEC Standard JESD22-C101 RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating MSL Rating: 3 Test: +260°C convection reflow Standard: JEDEC standard IPC/JEDEC J-STD-020 This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: +1.503.615.9000 Fax: +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev B 05-02-13 © 2013 TriQuint - 14 of 14 - Disclaimer: Subject to change without notice www.triquint.com