AP4224LGM
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-Resistance
D2
▼ Capable of 2.5V Gate Drive
D1
D2
D1
▼ Dual N MOSFET Package
▼ RoHS Compliant & Halogen-Free
SO-8
S1
G2
S2
G1
BVDSS
20V
RDS(ON)
24mΩ
ID
7.1A
Description
AP4224 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
.
Rating
Units
20
V
+12
V
Drain Current, VGS @ 4.5V
3
7.1
A
Drain Current, VGS @ 4.5V
3
5.6
A
30
A
2
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201503031
AP4224LGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=7A
-
-
24
mΩ
VGS=2.5V, ID=4A
-
-
38
mΩ
0.3
-
1.2
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=7A
-
23
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=7A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=10V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
9
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=5V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
855
1370
pF
Coss
Output Capacitance
VDS=10V
-
230
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.25
2.5
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=7A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4224LGM
30
30
24
18
12
18
12
6
6
0
0
0
2
4
0
6
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
ID=4A
T A =25 ℃
ID=7A
V G = 4.5 V
1.6
35
30
.
Normalized RDS(ON)
40
RDS(ON) (mΩ)
4.5V
4.0V
3.5V
3.0V
V G =2.5V
T A = 150 C
ID , Drain Current (A)
24
ID , Drain Current (A)
o
4.5 V
4.0 V
3.5 V
3.0 V
V G = 2.5 V
o
T A = 25 C
1.4
1.2
25
1.0
20
0.8
0.6
15
1.5
2.5
3.5
-100
4.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I D =250uA
6
T j =150 o C
Normalized VGS(th)
IS(A)
8
T j =25 o C
4
1.5
1.0
0.5
2
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4224LGM
f=1.0MHz
1000
6
ID=7A
V DS =10V
C iss
800
4
C (pF)
VGS , Gate to Source Voltage (V)
5
3
600
400
2
C oss
200
1
C rss
0
0
0
3
6
9
12
1
15
5
9
13
17
21
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by RDS(ON)
ID (A)
10
1ms
10ms
.
1
100ms
1s
0.1
DC
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 135℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
8
V DS = 5V
ID , Drain Current (A)
ID , Drain Current (A)
16
12
8
6
4
2
4
o
T j =150 C
o
T j =25 C
0
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient Temperature
4
AP4224LGM
100
2.4
o
T j =25 C
2
PD, Power Dissipation(W)
RDS(ON) (mΩ)
80
60
2.0V
40
2.5V
4.0V
4.5V
V GS =5.0V
20
1.6
1.2
0.8
0.4
0
0
0
2
4
6
8
10
0
12
I D , Drain Current (A)
50
100
150
o
T A , Ambient Temperature( C)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP4224LGM
MARKING INFORMATION
Part Number
4224LGM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6