DMP2004DMK DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability • • • • Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (approximate) SOT26 G1 S1 S2 G2 D1 Top View Internal Schematic Top View ESD PROTECTED D2 Ordering Information (Note 4) Part Number DMP2004DMK-7 Notes: Case SOT26 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information D2 G1 S1 PAB = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) PAB YM S2 G2 D1 Date Code Key Year Code 2007 U 2008 V Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMP2004DMK Document number: DS30939 Rev. 4 - 2 2009 W 2010 X 2011 Y 2012 Z 1 of 5 www.diodes.com 2013 A 2014 B 2015 C 2016 D 2017 E August 2012 © Diodes Incorporated DMP2004DMK Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT Characteristic Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current Value -20 ±8 -550 -1.9 Units V V mA A Value 500 250 -55 to +150 Units mW °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±1.0 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V Static Drain-Source On-Resistance RDS (ON) ⎯ 0.7 1.1 1.7 0.9 1.4 2.0 Ω |Yfs| VSD 200 -0.5 ⎯ ⎯ ⎯ -1.2 mS V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = -0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 5. 6. IDSS Test Condition VDS = -16V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. Short duration pulse test used to minimize self-heating effect. DMP2004DMK Document number: DS30939 Rev. 4 - 2 2 of 5 www.diodes.com August 2012 © Diodes Incorporated -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0 0 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMP2004DMK TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMP2004DMK Document number: DS30939 Rev. 4 - 2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage 3 of 5 www.diodes.com August 2012 © Diodes Incorporated NEW PRODUCT DMP2004DMK TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance -ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K J DMP2004DMK Document number: DS30939 Rev. 4 - 2 M D L 4 of 5 www.diodes.com SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm August 2012 © Diodes Incorporated DMP2004DMK Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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