CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G G D S ABSOLUTE MAXIMUM RATINGS Parameter CEP SERIES TO-220 Tc = 25 C unless otherwise noted Symbol Limit 30 Units V VGS ±20 V ID 105 A IDM 420 A 125 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.83 W/ C TJ,Tstg -55 to 175 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 1.2 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W Rev 2. 2007.Oct http://www.cetsemi.com Details are subject to change without notice . 1 CEP3060/CEB3060 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 35A 1 5 6 mΩ VGS = 4.5V, ID =28A 6.5 8 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 2475 pF 320 pF 180 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 16 32 ns 6 12 ns ns 49 98 Turn-Off Fall Time tf 11 22 ns Total Gate Charge Qg 15.8 21 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 16A, VGS = 5V 4.8 nC 2.8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 35A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 105 A 1.3 V CEP3060/CEB3060 100 150 80 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6V VGS=4V 60 40 20 0 0 0.5 1 1.5 TJ=125 C 1 4 3 2 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 1800 1200 Coss 600 Crss 0 5 10 15 20 25 2.2 1.9 ID=35A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 30 0 2400 1.2 60 VDS, Drain-to-Source Voltage (V) 3000 1.3 90 2 3600 0 120 -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 V =15V DS ID=16A 6 4 2 0 0 3 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP3060/CEB3060 6 12 18 24 10 2 10 1 10 30 100ms 1ms 10ms DC TC=25 C TJ=175 C Single Pulse 0 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 0.02 0.01 Single Pulse 10 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -5 10 t2 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 2