ES3AC THRU ES3JC HD CK 84 SMC Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io SMC 3A ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES3X X : From A To J Item Symbol Unit Repetitive Peak Reverse Voltage VRRM Maximum RMS Voltage Test Conditions ES3 A B V 50 100 VRMS V 35 70 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load, TL=100℃ 3.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 100 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature C D 150 200 F G 300 400 H J 500 600 105 140 210 280 350 420 Electrical Characteristics (T =25℃ Unless otherwise specified) Item Unit Peak Forward Voltage VF V IF =3.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,Irr=0.25A 35 Ta =25℃ 10 Ta =100℃ 500 Peak Reverse Current Thermal Resistance(Typical) IRRM1 IRRM2 μA RθJ-A Test Condition ES3 Symbol VRM=VRRM A B C D F 0.95 G 1.25 H J 1.7 1) Between junction and ambient 47 Between junction and terminal 12 ℃/W RθJ-L 1) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 3.5 3.0 150 125 TL=75℃ 8.3ms Single Half Sine Wave 2.5 100 2.0 75 1.5 50 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.3"×0.3" (8.0mm×8.0mm)Copper Pad Areas 0.5 0 25 0 50 25 75 100 125 0 150 TL(℃) 1 10 FIG.4：TYPICAL REVERSE CHARACTERISTICS 100 IR(uA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 Number of Cycles TJ=25℃ Pulse width=300us 1% Duty Cycle 10000 Tj=150℃ 1000 10 Tj=125℃ Tj=100℃ 100 ES3A-D 1.0 ES3F-G 10 ES3H-J 0.1 Tj=25℃ 1.0 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF(V) 0 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMC Package Outline Dimensions 0.108 (2.75) 0.217(5.50) 0.123 (3.25) 0.240(6.10) 0.256(6.50) 0.280(7.10) 0.007(0.17) 0.012(0.30) 0.087(2.2) 0.106(2.7) 0.035(0.90) 0.008(0.203)MAX. 0.055(1.40) 0.291(7.40) 0.331(8.40) Dimensions in inches and (millimeters) SMC Suggested Pad Layout 3.5 6.5 1.8 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SMC High Diode Semiconductor 4