EFA960CR-180F Low Distortion GaAs Power FET ISSUED 05/11/2006 FEATURES • • • • • • Non-Hermetic 180mil Metal Flange Package +36.5 dBm Typical Output Power 16.0 dB Typical Power Gain at 2GHz 0.5 x 9600 Micron Recessed “Mushroom” Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides High Power Efficiency, Linearity and Reliability Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) IDSS PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 2GHz f = 4GHz VDS = 8 V, IDS ≈ 50% IDSS Gain at 1dB Compression f = 2GHz f = 4GHz VDS = 8 V, IDS ≈ 50% IDSS Power Added Efficiency at 1dB Compression f = 2GHz VDS = 8 V, IDS ≈ 50% IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1600 2720 GM Transconductance 1100 1450 VP Pinch-off Voltage VDS = 3 V, IDS = 28 mA BVGD Drain Breakdown Voltage IGD = 9.6 mA -13 -15 BVGS Source Breakdown Voltage IGS = 9.6 mA -7 -14 SYMBOL P1dB G1dB PAE RTH VDS = 3 V, VGS = 0 V Thermal Resistance MIN 35.0 14.5 TYP 36.5 36.5 16.0 11.0 MAX UNITS dBm dB 34 % 3520 mA mS -2.0 -3.5 V V V o 6* C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reversed Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -5V 43.2 mA -7.2 mA 33 dBm 175oC -65/175oC 23 W 8V -3V 14.4 mA -2.4 mA @ 3dB Compression 175oC -65/175oC 23 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised May 2006 EFA960CR-180F Low Distortion GaAs Power FET ISSUED 05/11/2006 S-PARAMETERS VDS = 8 V, IDS ≈ 50% IDSS FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0.976 0.971 0.948 0.934 0.929 0.908 0.893 0.868 0.847 0.835 0.830 0.823 0.807 0.807 0.824 0.851 0.882 0.901 0.890 0.893 -158.7 -176.4 176.1 168.5 162.1 155.3 146.5 134.3 119.2 101.9 84.3 65.8 46.7 21.5 -7.2 -33.9 -54.9 -74.3 -88.9 -104.2 5.862 3.028 2.702 2.132 1.853 1.736 1.728 1.740 1.751 1.735 1.700 1.661 1.632 1.603 1.473 1.259 1.047 0.876 0.733 0.666 93.1 77.0 69.3 60.0 51.1 41.5 29.7 14.9 -2.0 -20.3 -38.6 -57.7 -77.4 -100.2 -124.5 -147.7 -167.0 174.5 160.0 144.8 0.010 0.012 0.018 0.021 0.025 0.030 0.038 0.047 0.056 0.065 0.074 0.083 0.089 0.096 0.095 0.087 0.078 0.066 0.072 0.068 22.1 22.3 26.4 27.2 26.9 24.1 18.8 7.8 -3.7 -17.5 -31.2 -46.7 -63.4 -81.6 -101.8 -119.4 -136.7 -146.5 -158.3 -177.5 0.822 0.808 0.743 0.733 0.704 0.671 0.626 0.562 0.503 0.453 0.415 0.389 0.391 0.386 0.420 0.481 0.574 0.660 0.659 0.673 179.7 176.5 169.2 167.2 165.4 163.3 158.0 149.5 136.4 119.1 100.0 79.4 59.1 35.4 7.6 -17.7 -36.3 -47.1 -54.7 -64.4 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised May 2006