CES2362 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 3A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 60 Units V Gate-Source Voltage VGS ±20 V ID 3 A IDM 12 A PD 1.25 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 100 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 3. 2010.Dec http://www.cetsemi.com Details are subject to change without notice . 1 CES2362 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 60V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 3A 61 80 mΩ VGS = 4.5V, ID = 2.4A 77 100 mΩ VDS = 25V, VGS = 0V, f = 1.0 MHz 1 560 pF 70 pF 40 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 1A, VGS = 10V, RGEN = 6Ω 11 22 ns 3 6 ns ns 28 56 Turn-Off Fall Time tf 3 6 ns Total Gate Charge Qg 13 16.9 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 30V, ID = 3A, VGS = 10V 1 nC 4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 1 A 1.2 V CES2362 7.5 VGS=10,8,6,4V 2.0 25 C ID, Drain Current (A) ID, Drain Current (A) 2.5 1.5 VGS=3V 1.0 0.5 0 0 0.5 1 1.5 2 6 4 2 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 400 200 Coss Crss 0 5 10 15 20 25 2.2 1.9 ID=3A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0 -55 C VGS, Gate-to-Source Voltage (V) 600 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C 1.5 VDS, Drain-to-Source Voltage (V) 800 1.2 3 0 1000 1.3 4.5 2.5 1200 0 6 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =30V DS ID=3A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CES2362 6 4 2 0 0.0 5.0 10.0 15.0 10 2 10 1 10 0 RDS(ON)Limit 1ms 10ms 100ms 1s DC 10 -1 10 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2