Suntac BUL128 High voltage fast-switching npn power transistor Datasheet

High Voltage Fast-Switching
NPN Power Transistor
BUL128
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NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
INTERNAL SCHEMATIC DIAGR
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APPLICATIONS:
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
4
1
2
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
700
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
4
A
Collector Peak Current (t p < 5 ms)
8
A
IC
I CM
IB
Parameter
Base Current
2
A
I BM
Base Peak Current (t p < 5 ms)
4
A
P tot
Total Dissipation at T c = 25 o C
70
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
W
-65 to 150
o
C
150
o
C
1/5
BUL128
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
1.78
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = -1.5 V)
V CE = 700 V
V CE = 700 V
V EBO
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I CEO
V CE(sat) ∗
V BE(sat) ∗
h FE ∗
I C = 100 mA
Collector Cut-Off
Current (I B = 0)
V CE = 400 V
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
=
=
=
=
0.5 A
1A
2.5 A
4A
Min.
Typ.
T j = 125 o C
L = 25 mH
IB
IB
IB
IB
=
=
=
=
I C = 0.5 A
IC = 1 A
I C = 2.5 A
I B = 0.1 A
I B = 0.2 A
I B = 0.5 A
DC Current Gain
I C = 10 mA
IC = 2 A
Group A
Group B
V CE = 5 V
V CE = 5 V
RESISTIVE LOAD
Storage Time
Fall Time
V CC = 125 V
I B1 = 0.4 A
T p = 30 µs
IC = 2 A
I B2 = -0.4 A
(see fig.2)
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE(off) = -5 V
V clamp = 200 V
I B1 = 0.4 A
R BB = 0 Ω
(see fig.1)
µA
µA
V
400
V
250
µA
0.7
1
1.5
V
V
V
V
1.1
1.2
1.3
V
V
V
0.5
10
14
25
ts
tf
Unit
100
500
9
0.1 A
0.2 A
0.5 A
1A
Base-Emitter
Saturation Voltage
Max.
28
40
0.2
3
0.4
µs
µs
0.6
0.1
1
0.2
µs
µs
1.5
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/5
BUL128
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/5
BUL128
Inductive Load Fall Time
Inductive Load Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/5
BUL128
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/5
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