UMS CHR2294 25-35ghz single side band mixer self biased Datasheet

CHR2294
RoHS COMPLIANT
25-35GHz Single Side Band Mixer
Self biased
GaAs Monolithic Microwave IC
Description
The CHR2294 is a multifunction chip (MFC) which
integrates a self biased LO buffer amplifier and a
sub-harmonically balanced diodes mixer for 2LO
suppression and image rejection. It is usable for
both up-conversion and down-conversion. It is
designed for a wide range of applications, typically
commercial
communication
systems
for
broadband local access. The backside of the chip
is both RF and DC grounded. This helps to
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
Up-conversion Supradyne mode
IF = 1.2GHz 4V / 60mA
30
25
Main Features
• Broadband performances : 25-35GHz
• 11dB conversion Loss
• 15dBc image rejection
• +9dBm LO input power
• +2.5dBm input power (1dB gain comp.)
• Low DC power consumption, 55mA@4V
• Chip size : 2.06 x 1.25 x 0.10 mm
20
15
10
5
0
CL sup (dB)
Img Supp (dBc)
P LO@ RF (dBm)
P 2xLO@ RF (dBm)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
23
24
25
26
27
28
29
30
31
32
33
34
RF Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
25
35
GHz
FLO
LO frequency range
11
19
GHz
FIF
IF frequency range
DC
3
GHz
Lc
Conversion Loss
11
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHR22946180 - 29 jun 06
1/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
35
36
25-35GHz SSB Mixer
CHR2294
Electrical Characteristics for Broadband Operation
Tamb = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
25
35
GHz
FLO
LO frequency range
11
19
GHz
FIF
IF frequency range
DC
3
GHz
Lc
Conversion Loss
11
dB
LO Input power
+9
dBm
-35
dBm
15
dBc
Input power at 1dB gain compression
+2.5
dBm
LO Match
LO VSWR
2.0:1
RF Match
RF VSWR
2.0:1
IF Match
IF VSWR
2.0:1
PLO
2xLO Leak 2xLO Leakage (for PLO=+5dBm)
Img Rej
P1dB
Image Rejection (1)
Vd
Drain bias voltage
4
V
Id
Bias current
55
mA
(1) With external quadrature hybrid coupler (reference on request). The minimal value depends on
the quality of the external quadrature combiner.
A bonding wire of typically 0.1 to 0.15 nH will improve the accesses matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.25
V
Id
Drain bias current
75
mA
Tj
Junction temperature
175
°C
Ta
Operating temperature range (chip backside)
-40 to +85
°C
-55 to +125
°C
Tstg
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHR22946180 - 29 jun 06
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
25-35GHz SSB Mixer
CHR2294
Typical On-wafer Measurements
Bias Conditions :
Vd= 4 V, Id= 55mA
Conversion gain, Image suppression & LO rejection with a 90° IQ combiner
UP Conversion- Supradyne mode- IF =1.2GHz
30
25
20
15
10
5
0
CL sup (dB)
Img Supp (dBc)
P LO@ RF (dBm)
P 2xLO@ RF (dBm)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
23
24
25
26
27
28
29
30
31
32
33
34
35
36
33
34
35
RF Frequency (GHz)
UP Conversion- Infradyne mode- IF =1.2GHz
30
25
20
15
10
5
CL sup (dB)
Img Supp (dBc)
0
P LO@ RF (dBm)
P 2xLO@ RF (dBm)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
22
23
24
25
26
27
28
29
30
31
32
RF Frequency (GHz)
Ref. : DSCHR22946180 - 29 jun 06
3/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
25-35GHz SSB Mixer
CHR2294
UP Conversion- Supradyne mode- IF =1.2GHz
Gain compression
versus
IF input power
IF = 1.2GHz
4V / 60mA
0
-1
-2
-3
F LO=12GHz
-4
F LO=14GHz
F LO=16GHz
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
IF Input power (dBm)
Ref. : DSCHR22946180 - 29 jun 06
4/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
4
6
25-35GHz SSB Mixer
CHR2294
Chip Assembly and Mechanical Data
Bonding pad positions
(Chip thickness: 100µm)
To VD DC Drain Supply
10nF
120pF
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Ref. : DSCHR22946180 - 29 jun 06
5/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
25-35GHz SSB Mixer
CHR2294
Ordering Information
Chip form
:
CHR2294-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHR22946180 - 29 jun 06
6/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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