CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip (MFC) which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable for both up-conversion and down-conversion. It is designed for a wide range of applications, typically commercial communication systems for broadband local access. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Up-conversion Supradyne mode IF = 1.2GHz 4V / 60mA 30 25 Main Features • Broadband performances : 25-35GHz • 11dB conversion Loss • 15dBc image rejection • +9dBm LO input power • +2.5dBm input power (1dB gain comp.) • Low DC power consumption, 55mA@4V • Chip size : 2.06 x 1.25 x 0.10 mm 20 15 10 5 0 CL sup (dB) Img Supp (dBc) P LO@ RF (dBm) P 2xLO@ RF (dBm) -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 23 24 25 26 27 28 29 30 31 32 33 34 RF Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF RF frequency range 25 35 GHz FLO LO frequency range 11 19 GHz FIF IF frequency range DC 3 GHz Lc Conversion Loss 11 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHR22946180 - 29 jun 06 1/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 35 36 25-35GHz SSB Mixer CHR2294 Electrical Characteristics for Broadband Operation Tamb = +25°C Symbol Parameter Min Typ Max Unit FRF RF frequency range 25 35 GHz FLO LO frequency range 11 19 GHz FIF IF frequency range DC 3 GHz Lc Conversion Loss 11 dB LO Input power +9 dBm -35 dBm 15 dBc Input power at 1dB gain compression +2.5 dBm LO Match LO VSWR 2.0:1 RF Match RF VSWR 2.0:1 IF Match IF VSWR 2.0:1 PLO 2xLO Leak 2xLO Leakage (for PLO=+5dBm) Img Rej P1dB Image Rejection (1) Vd Drain bias voltage 4 V Id Bias current 55 mA (1) With external quadrature hybrid coupler (reference on request). The minimal value depends on the quality of the external quadrature combiner. A bonding wire of typically 0.1 to 0.15 nH will improve the accesses matching. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.25 V Id Drain bias current 75 mA Tj Junction temperature 175 °C Ta Operating temperature range (chip backside) -40 to +85 °C -55 to +125 °C Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHR22946180 - 29 jun 06 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 25-35GHz SSB Mixer CHR2294 Typical On-wafer Measurements Bias Conditions : Vd= 4 V, Id= 55mA Conversion gain, Image suppression & LO rejection with a 90° IQ combiner UP Conversion- Supradyne mode- IF =1.2GHz 30 25 20 15 10 5 0 CL sup (dB) Img Supp (dBc) P LO@ RF (dBm) P 2xLO@ RF (dBm) -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 23 24 25 26 27 28 29 30 31 32 33 34 35 36 33 34 35 RF Frequency (GHz) UP Conversion- Infradyne mode- IF =1.2GHz 30 25 20 15 10 5 CL sup (dB) Img Supp (dBc) 0 P LO@ RF (dBm) P 2xLO@ RF (dBm) -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 22 23 24 25 26 27 28 29 30 31 32 RF Frequency (GHz) Ref. : DSCHR22946180 - 29 jun 06 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 25-35GHz SSB Mixer CHR2294 UP Conversion- Supradyne mode- IF =1.2GHz Gain compression versus IF input power IF = 1.2GHz 4V / 60mA 0 -1 -2 -3 F LO=12GHz -4 F LO=14GHz F LO=16GHz -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 IF Input power (dBm) Ref. : DSCHR22946180 - 29 jun 06 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 4 6 25-35GHz SSB Mixer CHR2294 Chip Assembly and Mechanical Data Bonding pad positions (Chip thickness: 100µm) To VD DC Drain Supply 10nF 120pF Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Ref. : DSCHR22946180 - 29 jun 06 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 25-35GHz SSB Mixer CHR2294 Ordering Information Chip form : CHR2294-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR22946180 - 29 jun 06 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice