Powerex Power CT15SM-24 General inverter . ups use Datasheet

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
ARY
N
I
M
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CT15SM-24
.
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Notice parame
Som
PRE
GENERAL INVERTER • UPS USE
CT15SM-24
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
r
4
2
20.0
φ 3.2
2
19.5MIN.
4.4
1.0
q
w
5.45
e
5.45
0.6
2.8
4
wr
¡VCES ............................................................................. 1200V
¡IC ......................................................................................... 15A
¡High Speed Switching
¡Low VCE Saturation Voltage
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
q
e
TO-3P
APPLICATION
AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls,
etc.
MAXIMUM RATINGS
Symbol
VCES
VGES
VGEM
IC
ICM
PC
Tj
Tstg
—
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Conditions
1200
±20
Unit
V
V
VCE = 0V
±30
15
30
250
–40 ~ +150
V
A
A
W
°C
–40 ~ +150
4.8
°C
g
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
Weight
Ratings
VGE = 0V
VCE = 0V
Typical value
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
ARY
N
I
M
I
L
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
PRE
CT15SM-24
GENERAL INVERTER • UPS USE
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
Parameter
V (BR) CES
Collector-emitter breakdown voltage
Collector-emitter leakage current
IC = 1mA, VGE = 0V
VGE = ±30V, VCE = 0V
Gate-emitter leakage current
Gate-emitter threshold voltage
VCE = 1200V, VGE = 0V
IC = 1.5mA, VCE = 10V
IC = 15A, VGE = 15V
Limits
Test conditions
Unit
Min.
1200
—
—
Typ.
—
—
—
Max.
—
±0.5
1
VCE = 25V, VGE = 0V, f = 1MHz
4.5
—
—
—
6.0
2.7
1600
150
7.5
3.6
—
—
V
V
pF
pF
td (off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VCC = 600V, Resistance load,
IC = 15A, VGE = 15V, RGE = 20Ω
—
—
—
—
45
50
150
150
—
—
—
—
pF
ns
ns
ns
Rth (j-c)
Thermal resistance
Junction to case
—
—
250
—
—
0.50
ns
°C/W
IGES
ICES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
V
µA
mA
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 20V
15V
COLLECTOR CURRENT IC (A)
20
Tj = 25°C
16
11V
12
10V
8
4
0
9V
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 30A
15A
2
0
10A
0
4
8
12
16
20
GATE-EMITTER VOLTAGE VGE (V)
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
ARY
N
I
M
I
L
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
PRE
CT15SM-24
GENERAL INVERTER • UPS USE
VGE = 15V
Tj = 25°C
4
3
2
1
0
0
4
8
12
16
VCE = 10V
Tj = 25°C
16
12
8
4
0
20
8
12
16
20
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
103
7
5
Cies
7
5
3
2
102
7
5
3 Tj = 25°C
2 VGE = 0V
Coes
3
tr
102
7
5
Cres
3
101 0
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
16
600V
12
8
4
40
60
80
GATE CHARGE Qg (nc)
100
2 3
5 7 101
2 3
5 7 102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
VCC = 400V
20
Tj = 25°C
VCC = 600V
VGE = 15V
RG = 20Ω
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
24
0
td(on)
2
f = 1MHZ
20
tf
td(off)
2
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
4
GATE-EMITTER VOLTAGE VGE (V)
103
0
0
COLLECTOR CURRENT IC (A)
104
7
5
3
2
101
COLLECTOR CURRENT IC (A)
5
COLLECTOR CURRENT VS.
GATE EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
20
SWITCHING TIME (ns)
CAPACITANCE Cies, Coes, Cres (pF)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
7
5
3
2
10–1
7
5
7
5
3
2
3
2
10–2
10–2
7
5
7
5
3
2
3
2
10–3
10–3
10–5 2 3 5 710–4 2 3 5 710–3
PULSE WIDTH tw (s)
Feb.1999
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