Vishay BZT55B3V0 Small signal zener diode Datasheet

BZT55-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
•
•
•
•
•
•
•
Very sharp reverse characteristic
Low reverse current level
e2
Available with tighter tolerances
Very high stability
Low noise
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9612009
Applications
• Voltage stabilization
Mechanical Data
Case: QuadroMELF Glass case SOD80
Weight: approx. 34 mg
Packaging Codes/Options:
GS08 / 2.5 k per 7" reel 12.5 k/box
GS18 / 10 k per 13" reel 10 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
Symbol
Value
Unit
PV
500
mW
IZ
PV/VZ
mA
RthJA ≤ 300 K/W
Z-current
Junction temperature
Tj
175
°C
Tstg
- 65 to + 175
°C
Symbol
Value
Unit
RthJA
500
K/W
Storage temperature range
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85637
Rev. 1.5, 10-Mar-06
Test condition
IF = 200 mA
Symbol
VF
Min
Typ.
Max
Unit
1.5
V
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1
BZT55-Series
Vishay Semiconductors
Electrical Characteristics
BZT55C..
Partnumber
Zener Voltage1)
Dynamic
Resistance
Test
Current
Temperature
Coefficient
Test
Current
VZ at IZT
rzj at
IZT,
f = 1 kHz
IZT
TKVZ
IZK
V
Ω
mA
%/K
min
IR at
Tamb
= 25°C
mA
IR at
Tamb
= 150 °C
µA
at VR
V
min
max
max
BZT55C2V4
2.28
2.56
< 85
< 600
5
- 0.09
- 0.06
1
< 50
< 100
BZT55C2V7
2.5
2.9
< 85
< 600
5
- 0.09
- 0.06
1
< 10
< 50
1
BZT55C3V0
2.8
3.2
< 90
< 600
5
- 0.08
- 0.05
1
<4
< 40
1
BZT55C3V3
3.1
3.5
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
BZT55C3V6
3.4
3.8
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
BZT55C3V9
3.7
4.1
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
BZT55C4V3
4
4.6
< 90
< 600
5
- 0.06
- 0.03
1
<1
< 20
1
BZT55C4V7
4.4
5
< 80
< 600
5
- 0.05
0.02
1
< 0.5
< 10
1
BZT55C5V1
4.8
5.4
< 60
< 550
5
- 0.02
0.02
1
< 0.1
<2
1
BZT55C5V6
5.2
6
< 40
< 450
5
- 0.05
0.05
1
< 0.1
<2
1
BZT55C6V2
5.8
6.6
< 10
< 200
5
0.03
0.06
1
< 0.1
<2
2
BZT55C6V8
6.4
7.2
<8
< 150
5
0.03
0.07
1
< 0.1
<2
3
BZT55C7V5
7
7.9
<7
< 50
5
0.03
0.07
1
< 0.1
<2
5
BZT55C8V2
7.7
8.7
<7
< 50
5
0.03
0.08
1
< 0.1
<2
6.2
BZT55C9V1 *
8.5
9.6
< 10
< 50
5
0.03
0.09
1
< 0.1
<2
6.8
BZT55C10 *
9.4
10.6
< 15
< 70
5
0.03
0.1
1
< 0.1
<2
7.5
BZT55C11 *
10.4
11.6
< 20
< 70
5
0.03
0.11
1
< 0.1
<2
8.2
BZT55C12 *
11.4
12.7
< 20
< 90
5
0.03
0.11
1
< 0.1
<2
9.1
BZT55C13 *
12.4
14.1
< 26
< 110
5
0.03
0.11
1
< 0.1
<2
10
BZT55C15 *
13.8
15.6
< 30
< 110
5
0.03
0.11
1
< 0.1
<2
11
BZT55C16 *
15.3
17.1
< 40
< 170
5
0.03
0.11
1
< 0.1
<2
12
BZT55C18 *
16.8
19.1
< 50
< 170
5
0.03
0.11
1
< 0.1
<2
13
BZT55C20 *
18.8
21.2
< 55
< 220
5
0.03
0.11
1
< 0.1
<2
15
BZT55C22 *
20.8
23.3
< 55
< 220
5
0.04
0.12
1
< 0.1
<2
16
BZT55C24 *
22.8
25.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
18
BZT55C27 *
25.1
28.9
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
20
BZT55C30 *
28
32
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
22
BZT55C33 *
31
35
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
24
BZT55C36 *
34
38
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
27
BZT55C39 *
37
41
< 90
< 500
2.5
0.04
0.12
0.5
< 0.1
<5
30
BZT55C43 *
40
46
< 90
< 600
2.5
0.04
0.12
0.5
< 0.1
<5
33
BZT55C47 *
44
50
< 110
< 700
2.5
0.04
0.12
0.5
< 0.1
<5
36
BZT55C51 *
48
54
< 125
< 700
2.5
0.04
0.12
0.5
< 0.1
< 10
39
BZT55C56 *
52
60
< 135
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
43
BZT55C62 *
58
66
< 150
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
47
BZT55C68 *
64
72
< 200
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
51
BZT55C75 *
70
79
< 250
< 1500
2.5
0.04
0.12
0.5
< 0.1
< 10
56
1)
tp ≤ 10 ms, T/tp > 1000
*)
Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C
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2
Reverse Leakage Current
1
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
Electrical Characteristics
BZT55B..
Partnumber
Zener Voltage1)
Dynamic
Resistance
Test
Current
Temperature
Coefficient of
Zener Voltage
Test
Current
VZ at IZT
rzj at
IZT,
f = 1 kHz
IZT
TKVZ
IZK
IR at
Tamb
= 25°C
V
Ω
mA
mA
µA
min
max
BZT55B2V4
2.35
2.45
< 85
< 600
BZT55B2V7
2.64
2.76
< 85
< 600
BZT55B3V0
2.94
3.06
< 90
BZT55B3V3
3.24
3.36
< 90
BZT55B3V6
3.52
3.68
BZT55B3V9
3.82
BZT55B4V3
BZT55B4V7
%/K
Reverse Leakage Current
IR at
Tamb
= 150 °C
at VR
V
min
max
5
- 0.09
- 0.06
1
< 50
< 100
1
5
- 0.09
- 0.06
1
< 10
< 50
1
< 600
5
- 0.08
- 0.05
1
<4
< 40
1
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
3.98
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
4.22
4.38
< 90
< 600
5
- 0.06
- 0.03
1
<1
< 20
1
4.6
4.8
< 80
< 600
5
- 0.05
0.02
1
< 0.5
< 10
1
1
BZT55B5V1
5
5.2
< 60
< 550
5
- 0.02
0.02
1
< 0.1
<2
BZT55B5V6
5.48
5.72
< 40
< 450
5
- 0.05
0.05
1
< 0.1
<2
1
BZT55B6V2
6.08
6.32
< 10
< 200
5
0.03
0.06
1
< 0.1
<2
2
BZT55B6V8
6.66
6.94
<8
< 150
5
0.03
0.07
1
< 0.1
<2
3
BZT55B7V5
7.35
7.65
<7
< 50
5
0.03
0.07
1
< 0.1
<2
5
6.2
BZT55B8V2
8.04
8.36
<7
< 50
5
0.03
0.08
1
< 0.1
<2
BZT55B9V1 *
8.92
9.28
< 10
< 50
5
0.03
0.09
1
< 0.1
<2
6.8
BZT55B10 *
9.8
10.2
< 15
< 70
5
0.03
0.1
1
< 0.1
<2
7.5
BZT55B11 *
10.78
11.22
< 20
< 70
5
0.03
0.11
1
< 0.1
<2
8.2
BZT55B12 *
11.76
12.24
< 20
< 90
5
0.03
0.11
1
< 0.1
<2
9.1
BZT55B13 *
12.74
13.26
< 26
< 110
5
0.03
0.11
1
< 0.1
<2
10
BZT55B15 *
14.7
15.3
< 30
< 110
5
0.03
0.11
1
< 0.1
<2
11
BZT55B16 *
15.7
16.3
< 40
< 170
5
0.03
0.11
1
< 0.1
<2
12
BZT55B18 *
17.64
18.36
< 50
< 170
5
0.03
0.11
1
< 0.1
<2
13
BZT55B20 *
19.6
20.4
< 55
< 220
5
0.03
0.11
1
< 0.1
<2
15
BZT55B22 *
21.55
22.45
< 55
< 220
5
0.04
0.12
1
< 0.1
<2
16
BZT55B24 *
23.5
24.5
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
18
BZT55B27 *
26.4
27.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
20
BZT55B30 *
29.4
30.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
22
BZT55B33 *
32.4
33.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
24
BZT55B36 *
35.3
36.7
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
27
BZT55B39 *
38.2
39.8
< 90
< 500
2.5
0.04
0.12
1
< 0.1
<5
30
BZT55B43 *
42.1
43.9
< 90
< 600
2.5
0.04
0.12
0.5
< 0.1
<5
33
BZT55B47 *
46.1
47.9
< 110
< 700
2.5
0.04
0.12
0.5
< 0.1
<5
36
BZT55B51 *
50
52
< 125
< 700
2.5
0.04
0.12
0.5
< 0.1
< 10
39
BZT55B56 *
54.9
57.1
< 135
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
43
BZT55B62 *
60.8
63.2
< 150
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
47
BZT55B68 *
66.6
69.4
< 200
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
51
BZT55B75 *
73.5
76.5
< 250
< 1500
2.5
0.04
0.12
0.5
< 0.1
< 10
56
1)
tp ≤ 10 ms, T/tp > 1000
*)
Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C
Document Number 85637
Rev. 1.5, 10-Mar-06
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3
BZT55-Series
Vishay Semiconductors
Typical Characteristics
600
500
400
300
200
100
0
0
40
80
120
160
200
Tamb - Ambient Temperature (°C)
95 9602
TKVZ - Temperature Coefficient of VZ (10-4/K)
Ptot - Total Power Dissipation (mW)
Tamb = 25 °C, unless otherwise specified
15
10
5
IZ = 5 mA
0
-5
0
Figure 1. Total Power Dissipation vs. Ambient Temperature
200
CD - Diode Capacitance (pF)
VZ - Voltage Change (mV)
Tj = 25 °C
100
IZ = 5 mA
10
0
5
10
15
VR = 2 V
Tj = 25 °C
100
50
0
25
20
VZ - Z-Voltage (V)
95 9598
15
25
20
100
1.2
TKVZ = 10 x 10-4/K
-4
8 x 10 /K
6 x 10-4/K
1.1
4 x 10-4/K
2 x 10-4/K
1.0
0
- 2 x 10-4/K
- 4 x 10-4/K
0.9
IF - Forward Current (mA)
VZtn = VZt/VZ (25 °C)
95 9599
10
VZ - Z-Voltage (V)
Figure 5. Diode Capacitance vs. Z-Voltage
1.3
0.8
- 60
5
95 9601
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
VZtn - Relative Voltage Change
150
0
1
10
Tj = 25 °C
1
0.1
0.01
0.001
0
60
120
180
0
240
Tj - Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
4
50
20
40
30
VZ - Z-Voltage (V)
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
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10
95 9600
95 9605
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
rZ - Differential Z-Resistance (Ω)
100
IZ - Z-Current (mA)
80
Ptot = 500 mW
Tamb = 25 °C
60
40
20
0
0
4
6
12
8
IZ = 1 mA
100
5 mA
10 10 mA
Tj = 25 °C
1
0
20
VZ - Z-Voltage (V)
95 9604
1000
5
95 9606
10
15
20
25
VZ - Z-Voltage (V)
Figure 9. Differential Z-Resistance vs. Z-Voltage
Figure 7. Z-Current vs. Z-Voltage
IZ - Z-Current (mA)
50
Ptot = 500 mW
Tamb = 25 °C
40
30
20
10
0
15
20
25
95 9607
35
30
VZ - Z-Voltage (V)
Zthp - Thermal Resistance for Pulse Cond. (KW)
Figure 8. Z-Current vs. Z-Voltage
1000
tP/T = 0.5
100
tP/T = 0.2
Single Pulse
10
RthJA = 300 K/W
T = Tjmax - Tamb
tP/T = 0.01
tP/T = 0.1
tP/T = 0.02
tP/T = 0.05
1
10-1
95 9603
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)
100
101
102
tP - Pulse Length (ms)
Figure 10. Thermal Response
Document Number 85637
Rev. 1.5, 10-Mar-06
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5
BZT55-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
12071
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6
Document Number 85637
Rev. 1.5, 10-Mar-06
BZT55-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85637
Rev. 1.5, 10-Mar-06
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7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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