TI1 AM4377BZDND80 Am437x sitara processor Datasheet

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AM4376, AM4377, AM4378, AM4379
SPRS851C – JUNE 2014 – REVISED APRIL 2016
AM437x Sitara™ Processors
1 Device Overview
1.1
Features
1
• Highlights
– Sitara™ ARM® Cortex®-A9 32-Bit RISC
Processor With Processing Speed up to
1000 MHz
• NEON™ SIMD Coprocessor and Vector
Floating Point (VFPv3) Coprocessor
• 32KB of Both L1 Instruction and Data Cache
• 256KB of L2 Cache or L3 RAM
– 32-Bit LPDDR2, DDR3, and DDR3L Support
– General-Purpose Memory Support (NAND,
NOR, SRAM) Supporting up to 16-Bit ECC
– SGX530 Graphics Engine
– Display Subsystem
– Programmable Real-Time Unit Subsystem and
Industrial Communication Subsystem (PRUICSS)
– Real-Time Clock (RTC)
– Up to Two USB 2.0 High-Speed Dual-Role
(Host or Device) Ports With Integrated PHY
– 10, 100, and 1000 Ethernet Switch Supporting
up to Two Ports
– Serial Interfaces:
• Two Controller Area Network (CAN) Ports
• Six UARTs, Two McASPs, Five McSPIs,
Three I2C Ports, One QSPI, and One HDQ
or 1-Wire
– Security
• Crypto Hardware Accelerators (AES, SHA,
RNG, DES, and 3DES)
• Secure Boot (Avaliable Only on AM437x
High-Security [AM437xHS] Devices)
– Two 12-Bit Successive Approximation Register
(SAR) ADCs
– Up to Three 32-Bit Enhanced Capture (eCAP)
Modules
– Up to Three Enhanced Quadrature Encoder
Pulse (eQEP) Modules
– Up to Six Enhanced High-Resolution PWM
(eHRPWM) Modules
• MPU Subsystem
– ARM Cortex-A9 32-Bit RISC Microprocessor
With Processing Speed up to 1000 MHz
– 32KB of Both L1 Instruction and Data Cache
– 256KB of L2 Cache (Option to Configure as L3
RAM)
– 256KB of On-Chip Boot ROM
– 64KB of On-Chip RAM
•
•
•
•
•
– Secure Control Module (SCM) (Avaliable Only
on AM437xHS Devices)
– Emulation and Debug
• JTAG
• Embedded Trace Buffer
– Interrupt Controller
On-Chip Memory (Shared L3 RAM)
– 256KB of General-Purpose On-Chip Memory
Controller (OCMC) RAM
– Accessible to All Masters
– Supports Retention for Fast Wakeup
– Up to 512KB of Total Internal RAM
(256KB of ARM Memory Configured as L3 RAM
+ 256KB of OCMC RAM)
External Memory Interfaces (EMIFs)
– DDR Controllers:
• LPDDR2: 266-MHz Clock (LPDDR2-533
Data Rate)
• DDR3 and DDR3L: 400-MHz Clock (DDR800 Data Rate)
• 32-Bit Data Bus
• 2GB of Total Addressable Space
• Supports One x32, Two x16, or Four x8
Memory Device Configurations
General-Purpose Memory Controller (GPMC)
– Flexible 8- and 16-Bit Asynchronous Memory
Interface With up to Seven Chip Selects (NAND,
NOR, Muxed-NOR, and SRAM)
– Uses BCH Code to Support 4-, 8-, or 16-Bit
ECC
– Uses Hamming Code to Support 1-Bit ECC
Error Locator Module (ELM)
– Used With the GPMC to Locate Addresses of
Data Errors From Syndrome Polynomials
Generated Using a BCH Algorithm
– Supports 4-, 8-, and 16-Bit Per 512-Byte Block
Error Location Based on BCH Algorithms
Programmable Real-Time Unit Subsystem and
Industrial Communication Subsystem (PRU-ICSS)
– Supports Protocols such as EtherCAT®,
PROFIBUS®, PROFINET®, and EtherNet/IP™,
EnDat 2.2, and More
– Two Programmable Real-Time Units (PRUs)
Subsystems With Two PRU Cores Each
• Each Core is a 32-Bit Load and Store RISC
Processor Capable of Running at 200 MHz
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
AM4376, AM4377, AM4378, AM4379
SPRS851C – JUNE 2014 – REVISED APRIL 2016
•
12KB (PRU-ICSS1), 4KB (PRU-ICSS0) of
Instruction RAM With Single-Error Detection
(Parity)
• 8KB (PRU-ICSS1), 4KB (PRU-ICSS0) of
Data RAM With Single-Error Detection
(Parity)
• Single-Cycle 32-Bit Multiplier With 64-Bit
Accumulator
• Enhanced GPIO Module Provides Shift-In
and Shift-Out Support and Parallel Latch on
External Signal
– 12KB (PRU-ICSS1 Only) of Shared RAM With
Single-Error Detection (Parity)
– Three 120-Byte Register Banks Accessible by
Each PRU
– Interrupt Controller Module (INTC) for Handling
System Input Events
– Local Interconnect Bus for Connecting Internal
and External Masters to the Resources Inside
the PRU-ICSS
– Peripherals Inside the PRU-ICSS
• One UART Port With Flow Control Pins,
Supports up to 12 Mbps
• One eCAP Module
• Two MII Ethernet Ports that Support
Industrial Ethernet, such as EtherCAT
• One MDIO Port
– Industrial Communication is Supported by Two
PRU-ICSS Subsystems
• Power, Reset, and Clock Management (PRCM)
Module
– Controls the Entry and Exit of Deep-Sleep
Modes
– Responsible for Sleep Sequencing, Power
Domain Switch-Off Sequencing, Wake-Up
Sequencing, and Power Domain Switch-On
Sequencing
– Clocks
• Integrated High-Frequency Oscillator Used
to Generate a Reference Clock (19.2, 24, 25,
and 26 MHz) for Various System and
Peripheral Clocks
• Supports Individual Clock Enable and
Disable Control for Subsystems and
Peripherals to Facilitate Reduced Power
Consumption
• Five ADPLLs to Generate System Clocks
(MPU Subsystem, DDR Interface, USB, and
Peripherals [MMC and SD, UART, SPI, I2C],
L3, L4, Ethernet, GFX [SGX530], and LCD
Pixel Clock)
– Power
• Two Nonswitchable Power Domains (RTC
and Wake-Up Logic [WAKE-UP])
2
Device Overview
www.ti.com
•
Three Switchable Power Domains (MPU
Subsystem, SGX530 [GFX], Peripherals and
Infrastructure [PER])
• Dynamic Voltage Frequency Scaling (DVFS)
• Real-Time Clock (RTC)
– Real-Time Date (Day, Month, Year, and Day of
Week) and Time (Hours, Minutes, and Seconds)
Information
– Internal 32.768-kHz Oscillator, RTC Logic, and
1.1-V Internal LDO
– Independent Power-On-Reset
(RTC_PWRONRSTn) Input
– Dedicated Input Pin (RTC_WAKEUP) for
External Wake Events
– Programmable Alarm Can Generate Internal
Interrupts to the PRCM for Wakeup or CortexA9 for Event Notification
– Programmable Alarm Can Be Used With
External Output (RTC_PMIC_EN) to Enable the
Power-Management IC to Restore Non-RTC
Power Domains
• Peripherals
– Up to Two USB 2.0 High-Speed Dual-Role
(Host or Device) Ports With Integrated PHY
– Up to Two Industrial Gigabit Ethernet MACs
(10, 100, and 1000 Mbps)
• Integrated Switch
• Each MAC Supports MII, RMII, and RGMII
and MDIO Interfaces
• Ethernet MACs and Switch Can Operate
Independent of Other Functions
• IEEE 1588v2 Precision Time Protocol (PTP)
– Up to Two CAN Ports
• Supports CAN Version 2 Parts A and B
– Up to Two Multichannel Audio Serial Ports
(McASPs)
• Transmit and Receive Clocks up to 50 MHz
• Up to Four Serial Data Pins Per McASP Port
With Independent TX and RX Clocks
• Supports Time Division Multiplexing (TDM),
Inter-IC Sound (I2S), and Similar Formats
• Supports Digital Audio Interface
Transmission (SPDIF, IEC60958-1, and
AES-3 Formats)
• FIFO Buffers for Transmit and Receive
(256 Bytes)
– Up to Six UARTs
• All UARTs Support IrDA and CIR Modes
• All UARTs Support RTS and CTS Flow
Control
• UART1 Supports Full Modem Control
– Up to Five Master and Slave McSPIs
• McSPI0–McSPI2 Support up to Four Chip
Selects
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
•
–
–
–
–
–
–
–
–
–
–
–
–
McSPI3 and McSPI4 Support up to Two
Chip Selects
• Up to 48 MHz
One Quad-SPI
• Supports eXecute In Place (XIP) from Serial
NOR FLASH
One Dallas 1-Wire® and HDQ Serial Interface
Up to Three MMC, SD, and SDIO Ports
• 1-, 4-, and 8-Bit MMC, SD, and SDIO Modes
• 1.8- or 3.3-V Operation on All Ports
• Up to 48-MHz Clock
• Supports Card Detect and Write Protect
• Complies With MMC4.3 and SD and SDIO
2.0 Specifications
Up to Three I2C Master and Slave Interfaces
• Standard Mode (up to 100 kHz)
• Fast Mode (up to 400 kHz)
Up to Six Banks of General-Purpose I/O (GPIO)
• 32 GPIOs per Bank (Multiplexed With Other
Functional Pins)
• GPIOs Can be Used as Interrupt Inputs (up
to Two Interrupt Inputs per Bank)
Up to Three External DMA Event Inputs That
Can Also be Used as Interrupt Inputs
Twelve 32-Bit General-Purpose Timers
• DMTIMER1 is a 1-ms Timer Used for
Operating System (OS) Ticks
• DMTIMER4–DMTIMER7 are Pinned Out
One Public Watchdog Timer
One Free-Running, High-Resolution 32-kHz
Counter (synctimer32K)
One Secure Watchdog Timer (Avaliable Only on
AM437xHS Devices)
SGX530 3D Graphics Engine
• Tile-Based Architecture Delivering up to 20M
Poly/sec
• Universal Scalable Shader Engine is a
Multithreaded Engine Incorporating Pixel and
Vertex Shader Functionality
• Advanced Shader Feature Set in Excess of
Microsoft VS3.0, PS3.0, and OGL2.0
• Industry Standard API Support of Direct3D
Mobile, OGL-ES 1.1 and 2.0, and OpenVG
1.0
• Fine-Grained Task Switching, Load
Balancing, and Power Management
• Advanced Geometry DMA-Driven Operation
for Minimum CPU Interaction
• Programmable High-Quality Image AntiAliasing
• Fully Virtualized Memory Addressing for OS
Operation in a Unified Memory Architecture
Display Subsystem
• Display Modes
– Programmable Pixel Memory Formats
(Palletized: 1-, 2-, 4-, and 8-Bits Per
Pixel; RGB 16- and 24-Bits Per Pixel; and
YUV 4:2:2)
– 256- × 24-Bit Entries Palette in RGB
– Up to 2048 × 2048 Resolution
• Display Support
– Four Types of Displays Are Supported:
Passive and Active Colors; Passive and
Active Monochromes
– 4- and 8-Bit Monochrome Passive Panel
Interface Support (15 Grayscale Levels
Supported Using Dithering Block)
– RGB 8-Bit Color Passive Panel Interface
Support (3,375 Colors Supported for
Color Panel Using Dithering Block)
– RGB 12-, 16-, 18-, and 24-Bit Active
Panel Interface Support (Replicated or
Dithered Encoded Pixel Values)
– Remote Frame Buffer (Embedded in the
LCD Panel) Support Through the RFBI
Module
– Partial Refresh of the Remote Frame
Buffer Through the RFBI Module
– Partial Display
– Multiple Cycles Output Format on 8-, 9-,
12-, and 16-Bit Interface (TDM)
• Signal Processing
– Overlay and Windowing Support for One
Graphics Layer (RGB or CLUT) and Two
Video Layers (YUV 4:2:2, RGB16, and
RGB24)
– RGB 24-Bit Support on the Display
Interface, Optionally Dithered to RGB
18‑Bit Pixel Output Plus 6-Bit Frame Rate
Control (Spatial and Temporal)
– Transparency Color Key (Source and
Destination)
– Synchronized Buffer Update
– Gamma Curve Support
– Multiple-Buffer Support
– Cropping Support
– Color Phase Rotation
– Two 12-Bit SAR ADCs (ADC0, ADC1)
• 867K Samples Per Second
• Input Can Be Selected from Any of the Eight
Analog Inputs Multiplexed Through an 8:1
Analog Switch
• ADC0 Can Be Configured to Operate as a
4‑, 5-, or 8-Wire Resistive Touch Screen
Controller (TSC)
– Up to Three 32-Bit eCAP Modules
• Configurable as Three Capture Inputs or
Three Auxiliary PWM Outputs
– Up to Six Enhanced eHRPWM Modules
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Device Overview
3
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Dedicated 16-Bit Time-Base Counter With
Time and Frequency Controls
• Configurable as Six Single-Ended, Six DualEdge Symmetric, or Three Dual-Edge
Asymmetric Outputs
– Up to Three 32-Bit eQEP Modules
• Device Identification
– Factory Programmable Electrical Fuse Farm
(FuseFarm)
• Production ID
• Device Part Number (Unique JTAG ID)
• Device Revision (Readable by Host ARM)
• Security Keys (Avaliable Only on AM437xHS
Devices)
• Feature Identification
• Debug Interface Support
– JTAG and cJTAG for ARM (Cortex-A9 and
PRCM) and PRU-ICSS Debug
– Supports Real-Time Trace Pins (for Cortex-A9)
– 64-KB Embedded Trace Buffer (ETB)
– Supports Device Boundary Scan
– Supports IEEE 1500
• DMA
– On-Chip Enhanced DMA Controller (EDMA) Has
Three Third-Party Transfer Controllers (TPTCs)
and One Third-Party Channel Controller
www.ti.com
•
1.2
•
•
•
•
4
•
•
•
•
(TPCC), Which Supports up to 64
Programmable Logical Channels and Eight
QDMA Channels
– EDMA is Used for:
• Transfers to and from On-Chip Memories
• Transfers to and from External Storage
(EMIF, GPMC, and Slave Peripherals)
InterProcessor Communication (IPC)
– Integrates Hardware-Based Mailbox for IPC and
Spinlock for Process Synchronization Between
the Cortex-A9, PRCM, and PRU-ICSS
Boot Modes
– Boot Mode is Selected Through Boot
Configuration Pins Latched on the Rising Edge
of the PWRONRSTn Reset Input Pin
Camera
– Dual Port 8- and 10-Bit BT656 Interface
– Dual Port 8- and 10-Bit Including External Syncs
– Single Port 12-Bit
– YUV422/RGB422 and BT656 Input Format
– RAW Format
– Pixel Clock Rate up to 75 MHz
Package
– 491-Pin BGA Package (17-mm × 17-mm) (ZDN
Suffix), 0.65-mm Ball Pitch With Via Channel
Array Technology to Enable Low-Cost Routing
Applications
Patient Monitoring
Navigation Equipment
Industrial Automation
Portable Data Terminals
Device Overview
•
•
•
•
Bar Code Scanners
Point of Service
Portable Mobile Radios
Test and Measurement
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1.3
SPRS851C – JUNE 2014 – REVISED APRIL 2016
Description
The TI AM437x high-performance processors are based on the ARM Cortex-A9 core.
The processors are enhanced with 3D graphics acceleration for rich graphical user interfaces, as well as a
coprocessor for deterministic, real-time processing including industrial communication protocols, such as
EtherCAT, PROFIBUS, EnDat, and others. The devices support high-level operating systems (HLOS).
Linux® is available free of charge from TI. Other HLOSs are available from TI's Design Network and
ecosystem partners.
These devices offer an upgrade to systems based on lower performance ARM cores and provide updated
peripherals, including memory options such as QSPI-NOR and LPDDR2.
The processors contain the subsystems shown in Figure 1-1, and a brief description of each follows.
The processor subsystem is based on the ARM Cortex-A9 core, and the PowerVR SGX™ graphics
accelerator subsystem provides 3D graphics acceleration to support display and advanced user interfaces.
The programmable real-time unit subsystem and industrial communication subsystem (PRU-ICSS) is
separate from the ARM core and allows independent operation and clocking for greater efficiency and
flexibility. The PRU-ICSS enables additional peripheral interfaces and real-time protocols such as
EtherCAT, PROFINET, EtherNet/IP, PROFIBUS, Ethernet Powerlink, Sercos, EnDat, and others. The
PRU-ICSS enables EnDat and another industrial communication protocol in parallel. Additionally, the
programmable nature of the PRU-ICSS, along with their access to pins, events and all system-on-chip
(SoC) resources, provides flexibility in implementing fast real-time responses, specialized data handling
operations, custom peripheral interfaces, and in off-loading tasks from the other processor cores of the
SoC.
High-performance interconnects provide high-bandwidth data transfers for multiple initiators to the internal
and external memory controllers and to on-chip peripherals. The device also offers a comprehensive
clock-management scheme.
One on-chip analog to digital converter (ADC0) can couple with the display subsystem to provide an
integrated touch-screen solution. The other ADC (ADC1) can combine with the pulse width module to
create a closed-loop motor control solution.
The RTC provides a clock reference on a separate power domain. The clock reference enables a batterybacked clock reference.
The camera interface offers configuration for a single- or dual-camera parallel port.
Cryptographic acceleration is available in every AM437x device. Secure boot is available only on
AM437xHS devices for anticloning and illegal software update protection. For more information about
secure boot and HS devices, contact your TI sales representative.
Table 1-1. Device Information (1)
PACKAGE
BODY SIZE
AM4376ZDN
PART NUMBER
NFBGA (491)
17.0 mm × 17.0 mm
AM4377ZDN
NFBGA (491)
17.0 mm × 17.0 mm
AM4378ZDN
NFBGA (491)
17.0 mm × 17.0 mm
AM4379ZDN
NFBGA (491)
17.0 mm × 17.0 mm
(1)
For more information, see Section 7, Mechanical, Packaging, and Orderable Information.
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Device Overview
5
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
1.4
www.ti.com
Functional Block Diagram
ARM
Cortex-A9
Up to 1000 MHz
Graphics
Display
PowerVR
SGX
3D GFX
20 MTri/s
24-bit LCDCtrl (WXGA)
Touch Screen Controller (TSC)
Processing: Overlay,
Resizing,Color Space
Conversion, and more
Quad Core
PRU-ICSS
32KB, 32KB L1
256KB L2, L3 RAM
64KB RAM
(A)
EtherCAT,
PROFINET,
EtherNet/IP,
EnDat
and more
Crypto
256KB
L3 RAM
Secure Boot
(HS device only)
L3 and L4 Interconnect
System Interface
UART x6
EDMA
SPI x5
Timers x12
QSPI
WDT
2
RTC
I C x3
CAN x2
eHRPWM x6
HDQ, 1-Wire
eQEP, eCAP x3
McASP x2
(4ch)
GPIO
JTAG, ETB
ADC0 (8 inputs)
(A)
12-bit SAR
Simplified Power
Sequencing
ADC1 (8 inputs)
12-bit SAR
Camera Interface
(2x Parallel)
MMC, SD,
SDIO x3
USB 2.0 Dual-Role
+ PHY x2
EMAC
2-port switch
10, 100, 1G
with 1588
(MII, RMII,
RGMII
and MDIO)
Memory Interface
32b LPDDR2, DDR3, DDR3L
(B)
NAND, NOR, Async
(16-bit ECC)
Copyright © 2016, Texas Instruments Incorporated
A.
B.
Use of TSC limits available ADC0 inputs.
Maximum clock: LPDDR2 = 266 MHz; DDR3/DDR3L = 400 MHz.
Figure 1-1. Functional Block Diagram
6
Device Overview
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table of Contents
1
2
3
Device Overview ......................................... 1
1.1
Features .............................................. 1
1.2
Applications ........................................... 4
1.3
Description ............................................ 5
1.4
Functional Block Diagram ............................ 6
5
5.10
Revision History ......................................... 8
Device Comparison ..................................... 9
3.1
4
5.9
Related Products ..................................... 9
Terminal Configuration and Functions ............ 10
4.1
Pin Diagrams ........................................ 10
4.2
Pin Attributes ........................................ 20
4.3
Signal Descriptions .................................. 64
.........................................
Absolute Maximum Ratings........................
ESD Ratings .......................................
Power-On Hours (POH) ...........................
Operating Performance Points ....................
Recommended Operating Conditions .............
Power Consumption Summary ....................
DC Electrical Characteristics ......................
Specifications
102
5.1
102
5.2
5.3
5.4
5.5
5.6
5.7
5.8
ADC0: Touch Screen Controller and Analog-to-
6
104
104
105
106
108
109
5.11
Thermal Resistance Characteristics ............... 118
5.12
External Capacitors ................................ 120
5.13
Timing and Switching Characteristics.............. 123
5.14
Emulation and Debug .............................. 253
Device and Documentation Support .............. 254
6.1
Device Nomenclature .............................. 254
6.2
Tools and Software ................................ 255
6.3
Documentation Support ............................ 257
6.4
Related Links
6.5
Community Resources............................. 260
6.6
Trademarks ........................................ 260
6.7
Electrostatic Discharge Caution
6.8
7
Digital Subsystem Electrical Parameters .......... 112
ADC1: Analog-to-Digital Subsystem Electrical
Parameters ......................................... 114
VPP Specifications for One-Time Programmable
(OTP) eFuses ...................................... 117
......................................
...................
Glossary............................................
260
260
260
Mechanical, Packaging, and Orderable
Information ............................................. 261
7.1
Via Channel ........................................ 261
7.2
Packaging Information ............................. 261
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Table of Contents
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www.ti.com
2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (April 2015) to Revision C
•
•
•
•
•
•
•
•
•
•
•
•
•
•
8
Page
Added high-security device note to Secure Boot list item under Security in Section 1.1 ................................... 1
Added high-security device note to SCM list item under MPU Subsystem in Section 1.1 .................................. 1
Added Secure Watchdog Timer list item under Peripherals in Section 1.1 ................................................... 3
Added Security Keys list item under Device Identification in Section 1.1 ..................................................... 4
Changed last paragraph in Section 1.3 ............................................................................................ 5
Added Secure Boot to Figure 1-1................................................................................................... 6
Added Section 3.1, Related Products .............................................................................................. 9
Changed Section 4.1 title to Pin Diagrams ...................................................................................... 10
Changed Ball P21 to VPP in Table 4-2 .......................................................................................... 12
Changed Section 4.2 title to Pin Attributes ...................................................................................... 20
Changed Ball No. P21 to VPP and updated footnotes in Table 4-10 ........................................................ 22
Added Section 5.10, VPP Specifications for One-Time Programmable (OTP) eFuses .................................. 117
Reformatted and added content to Section 6 .................................................................................. 254
Added SUFFIX to Figure 6-1 ..................................................................................................... 255
Revision History
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
3 Device Comparison
This architecture is configured with different sets of features in different devices. For a comparison of the
features supported across different devices, see the Device Features section of the AM437x Sitara
Processors Technical Reference Manual.
3.1
Related Products
For information about other devices in this family of products or related products, see the following links:
Sitara Processors Scalable processors based on ARM Cortex-A cores with flexible peripherals,
connectivity and unified software support – perfect for sensors to servers.
Sitara AM437x Processors Scalable ARM Cortex-A9 from 300 MHz up to 1 GHz. 3D graphics option for
enhanced user interface. Quad core PRU-ICSS for industrial Ethernet protocols and position
feedback control. Dual camera support for barcode scanning, preview and still pictures.
Customer programmable secure boot option.
Companion Products for AM437x Devices Review products that are frequently used in conjunction with
this product.
Reference Designs for AM437x Devices TI Designs Reference Design Library is a robust reference
design library spanning analog, embedded processor and connectivity. Created by TI experts
to help you jump start your system design, all TI Designs include schematic or block
diagrams, BOMs and design files to speed your time to market. Search and download
designs at ti.com/tidesigns.
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Device Comparison
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www.ti.com
4 Terminal Configuration and Functions
4.1
Pin Diagrams
NOTE
The terms "ball", "pin", and "terminal" are used interchangeably throughout the document. An
attempt is made to use "ball" only when referring to the physical package.
10
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-1. ZDN Ball Map [Section Top Left - Top View]
A
B
C
D
E
F
G
H
25
VSS
XTALOUT
XTALIN
gpio5_8
gpio5_12
USB1_DRVVBUS
EXTINTn
uart3_rxd
24
dss_ac_bias_en
VSS_OSC
xdma_event_intr1
xdma_event_intr0
gpio5_13
gpio5_9
eCAP0_in_PWM0_o
ut
uart3_txd
23
dss_hsync
dss_vsync
VDDS_OSC
VDDS_CLKOUT
gpio5_11
22
dss_pclk
dss_data0
21
dss_data1
dss_data2
dss_data3
20
dss_data4
dss_data5
dss_data6
vdd_mpu_mon
19
dss_data8
dss_data9
dss_data12
dss_data13
18
dss_data10
dss_data11
VDDSHV5
VDDS
dss_data7
CAP_VBB_MPU
mcasp0_axr0
WARMRSTn
uart3_ctsn
USB0_DRVVBUS
Reserved
gpio5_10
clkreq
Reserved
VSS
Ball Map Position
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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Table 4-2. ZDN Ball Map [Section Top Middle - Top View]
J
K
L
M
N
P
R
T
25
uart0_rtsn
uart0_rxd
uart0_ctsn
mcasp0_axr1
spi4_cs0
spi4_sclk
spi0_cs1
USB1_VBUS
24
uart0_txd
uart3_rtsn
mcasp0_ahclkx
mcasp0_ahclkr
mcasp0_aclkx
spi4_d1
spi4_d0
EMU1
23
mcasp0_fsr
mcasp0_aclkr
EMU0
spi0_sclk
spi2_cs0
22
uart1_ctsn
uart1_rtsn
mcasp0_fsx
spi2_d0
spi0_d0
21
uart1_rxd
uart1_txd
VDDS_PLL_CORE_
LCD
VPP
spi0_d1
20
VDD_MPU
VDD_MPU
spi2_sclk
spi2_d1
spi0_cs0
19
VDD_MPU
VDD_MPU
VDDSHV3
VDDS
VDD_CORE
VDDSHV3
VSS
VDDSHV3
VDDSHV3
18
VDDSHV3
VDD_MPU
VSS
VDD_CORE
Ball Map Position
12
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-3. ZDN Ball Map [Section Top Right - Top View]
U
V
W
Y
AA
AB
AC
AD
AE
25
USB1_ID
USB1_DM
USB0_DP
nTRST
TCK
cam1_wen
cam1_field
cam1_hd
VSS
24
USB0_ID
USB1_DP
USB0_DM
TMS
TDO
I2C0_SDA
cam1_data9
cam1_data8
cam1_data7
23
USB0_VBUS
VSSA_USB
PWRONRSTn
VSS
cam1_vd
cam1_data6
cam1_data5
22
USB1_CE
USB0_CE
I2C0_SCL
cam1_data4
cam1_data3
21
VDDA1P8V_USB1
VDDA1P8V_USB0
cam1_data1
cam1_data2
cam1_pclk
20
VDDA3P3V_USB1
VDDA3P3V_USB0
cam0_pclk
cam0_data7
cam0_data6
19
VSS
cam0_data5
cam0_data4
18
VSS
cam0_vd
cam0_data0
VSS
VDDSHV3
TDI
cam1_data0
VDDS
cam0_data9
cam0_data8
cam0_data2
cam0_data3
cam0_data1
cam0_field
Ball Map Position
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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Table 4-4. ZDN Ball Map [Section Middle Left - Top View]
A
B
C
D
E
F
G
H
17
mdio_data
mdio_clk
dss_data14
dss_data15
VDDS_PLL_MPU
mii1_rxd0
VDDSHV6
VDDSHV6
16
rmii1_ref_clk
mii1_rxd1
mii1_txd3
mii1_col
mii1_rxd2
VDDSHV7
VDDSHV6
VDD_MPU
15
mii1_rx_dv
mii1_txd0
14
mii1_txd1
mii1_crs
mii1_rxd3
mii1_tx_clk
13
mii1_tx_en
mii1_rx_er
mii1_txd2
mii1_rx_clk
12
gpmc_clk
gpmc_csn3
11
gpmc_ad15
gpmc_ad14
gpmc_ad13
gpmc_ad11
gpmc_ad12
gpmc_ad10
VDDSHV9
VDDSHV9
10
gpmc_ad9
gpmc_ad8
gpmc_be0n_cle
gpmc_wen
gpmc_oen_ren
gpmc_csn2
VDDSHV10
VDDSHV10
VSS
CAP_VDD_SRAM_
MPU
VDDS_SRAM_MPU
_BB
VDDSHV8
VDD_MPU
CAP_VDD_SRAM_C VDDS_SRAM_COR
ORE
E_BG
VDDSHV8
VDD_MPU
VDDS
Ball Map Position
14
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-5. ZDN Ball Map [Section Middle Middle - Top View]
J
K
L
M
N
P
R
T
17
VSS
VDDSHV3
VSS
VDD_MPU
VDD_CORE
VDD_CORE
VSS
VSS
16
VDD_MPU
VSS
VDD_CORE
VDD_CORE
15
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
14
VDD_MPU
VSS
VDD_CORE
VDD_CORE
VSS
VSS
VDD_CORE
VDD_CORE
13
VDD_MPU
VSS
VSS
VSS
12
VSS
VSS
VDD_CORE
VDD_CORE
VSS
VSS
VSS
VSS
11
VDD_CORE
VSS
VSS
VSS
VSS
VSS
VDD_CORE
VDD_CORE
10
VDD_CORE
VSS
VSS
VSS
Ball Map Position
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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Table 4-6. ZDN Ball Map [Section Middle Right - Top View]
U
V
W
17
VSS
VDDSHV2
16
VSS
VDDSHV2
VDDSHV2
VDDA_ADC1
ADC1_AIN2
ADC1_AIN1
15
VDD_CORE
VDD_CORE
VDDS
ADC1_AIN5
ADC1_AIN4
ADC1_AIN3
14
VSS
VSS
13
VSS
VSS
VDD_CORE
ADC0_AIN2
ADC0_AIN3
ADC0_AIN4
12
VSS
VSS
VDD_CORE
ADC0_AIN1
ADC0_AIN0
VDDA_ADC0
11
VSS
VSS
10
VSS
VSS
Reserved
Y
Reserved
AA
Reserved
AB
Reserved
AC
AD
AE
cam0_wen
cam0_hd
ADC1_AIN0
ADC1_AIN7
ADC1_AIN6
VSSA_ADC
ADC1_VREFN
ADC1_VREFP
ADC0_VREFP
ADC0_VREFN
ADC0_AIN5
ADC0_AIN6
ADC0_AIN7
Reserved
VDDS
Reserved
Reserved
Reserved
Reserved
VSS
Reserved
Ball Map Position
16
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-7. ZDN Ball Map [Section Bottom Left - Top View]
A
B
C
9
gpmc_advn_ale
gpmc_csn1
8
gpmc_csn0
gpmc_ad7
7
gpmc_ad5
gpmc_ad4
6
gpmc_ad3
gpmc_ad2
gpmc_a2
5
gpmc_ad1
gpmc_ad0
gpmc_a1
4
gpmc_a3
gpmc_a9
3
gpmc_be1n
gpmc_wpn
gpmc_a0
2
gpmc_wait0
mmc0_dat2
mmc0_dat1
1
VSS
mmc0_dat3
mmc0_dat0
D
E
F
G
H
VDDSHV11
gpmc_ad6
gpmc_a11
gpmc_a6
VDDS3P3V_IOLDO
gpmc_a4
gpmc_a5
gpmc_a8
CAP_VDDS1P8V_IO
LDO
gpmc_a7
gpmc_a10
VDDSHV11
VDDS
VDDS_PLL_DDR
ddr_dqm0
ddr_d4
ddr_d0
ddr_d3
ddr_d5
mmc0_cmd
ddr_d1
ddr_dqs0
ddr_d6
ddr_dqm1
mmc0_clk
ddr_d2
ddr_dqsn0
ddr_d7
ddr_d8
Ball Map Position
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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Table 4-8. ZDN Ball Map [Section Bottom Middle - Top View]
J
K
L
M
N
P
R
T
9
VSS
VSS
VSS
VDD_CORE
VDD_CORE
VSS
VDD_CORE
VDD_CORE
8
VDDSHV1
VDDS_DDR
VSS
VDDS_DDR
VDDS_DDR
VSS
VDDS_DDR
VDDS_DDR
7
VDDSHV1
VDDS_DDR
VDDS_DDR
VDDS_DDR
VDDS_DDR
VDDS_DDR
6
ddr_d9
ddr_d13
ddr_a10
ddr_cke1
VDDS_DDR
ddr_vref
5
ddr_d10
ddr_d14
ddr_csn0
ddr_a13
ddr_a5
ddr_a11
4
ddr_d11
ddr_d15
ddr_csn1
ddr_wen
ddr_a6
ddr_a12
3
ddr_d12
ddr_ba2
ddr_cke0
ddr_casn
ddr_a7
ddr_a14
2
ddr_dqs1
ddr_ba1
ddr_a2
ddr_ck
ddr_rasn
ddr_a3
ddr_a8
ddr_a15
1
ddr_dqsn1
ddr_ba0
ddr_a1
ddr_nck
ddr_a0
ddr_a4
ddr_a9
ddr_resetn
Ball Map Position
18
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-9. ZDN Ball Map [Section Bottom Right - Top View]
U
V
9
VSS
VSS
8
VSS
VDDS_DDR
W
7
VDDS_DDR
6
ddr_dqm2
ddr_d23
5
ddr_d16
ddr_d22
4
ddr_d17
ddr_d21
3
ddr_d18
Y
Reserved
AA
AB
AC
AD
AE
Reserved
Reserved
Reserved
VDD_CORE
Reserved
VDDS
VSS
Reserved
Reserved
Reserved
Reserved
Reserved
VSS
Reserved
Reserved
RTC_PMIC_EN
RTC_PWRONRST
n
Reserved
VDDS_RTC
RTC_XTALIN
VSS_RTC
RTC_XTALOUT
ddr_vtp
CAP_VDD_RTC
RTC_WAKEUP
ddr_d26
ddr_d25
ddr_d27
2
ddr_odt1
ddr_d19
ddr_dqsn2
ddr_d24
ddr_dqsn3
ddr_d28
ddr_d31
Reserved
RTC_KALDO_EN
n
1
ddr_odt0
ddr_d20
ddr_dqs2
ddr_dqm3
ddr_dqs3
ddr_d29
ddr_d30
Reserved
VSS
Ball Map Position
1
2
3
4
5
6
7
8
9
Terminal Configuration and Functions
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4.2
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Pin Attributes
1. BALL NUMBER: Package ball numbers associated with each signals.
2. PIN NAME: The name of the package pin.
Note: The table does not take into account subsystem terminal multiplexing options.
3. SIGNAL NAME: The signal name for that pin in the mode being used.
4. MODE: Multiplexing mode number.
(a) Mode 0 is the primary mode; this means that when mode 0 is set, the function mapped on the
terminal corresponds to the name of the terminal. There is always a function mapped on the
primary mode. Notice that primary mode is not necessarily the default mode.
Note: The default mode is the mode at the release of the reset; also see the RESET REL. MODE
column.
(b) Modes 1 to 7 are possible modes for alternate functions. On each terminal, some modes are
effectively used for alternate functions, while some modes are not used and do not correspond to a
functional configuration.
5. TYPE: Signal direction
– I = Input
– O = Output
– IO = Input and Output
– D = Open drain
– DS = Differential
– A = Analog
– PWR = Power
– GND = Ground
Note: In the safe_mode, the buffer is configured in high-impedance.
6. BALL RESET STATE: State of the terminal while the active low PWRONRSTn terminal is low.
– 0: The buffer drives VOL (pulldown or pullup resistor not activated)
0(PD): The buffer drives VOL with an active pulldown resistor
– 1: The buffer drives VOH (pulldown or pullup resistor not activated)
1(PU): The buffer drives VOH with an active pullup resistor
– Z or OFF: High-impedance
– L: High-impedance with an active pulldown resistor
– H : High-impedance with an active pullup resistor
7. BALL RESET REL. STATE: State of the terminal after the active low PWRONRSTn terminal
transitions from low to high.
– 0: The buffer drives VOL (pulldown or pullup resistor not activated)
0(PD): The buffer drives VOL with an active pulldown resistor
– 1: The buffer drives VOH (pulldown or pullup resistor not activated)
1(PU): The buffer drives VOH with an active pullup resistor
– Z or OFF: High-impedance.
– L: High-impedance with an active pulldown resistor
– H : High-impedance with an active pullup resistor
8. RESET REL. MODE: The mode is automatically configured after the active low PWRONRSTn terminal
transitions from low to high.
9. POWER: The voltage supply that powers the terminal’s IO buffers.
10. HYS: Indicates if the input buffer is with hysteresis.
11. BUFFER STRENGTH: Drive strength of the associated output buffer.
12. PULLUP OR PULLDOWN TYPE: Denotes the presence of an internal pullup or pulldown resistor.
Pullup and pulldown resistors can be enabled or disabled via software.
13. IO CELL: IO cell information.
20
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Note: Configuring two terminals to the same input signal is not supported as it can yield unexpected
results. This can be easily prevented with the proper software configuration.
Terminal Configuration and Functions
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Table 4-10. Pin Attributes (ZDN Package)
BALL
NUMBER [1]
PIN NAME [2]
SIGNAL NAME [3]
MODE [4]
TYPE [5]
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
AA12
ADC0_AIN0
ADC0_AIN0
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
Y12
ADC0_AIN1
ADC0_AIN1
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
Y13
ADC0_AIN2
ADC0_AIN2
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
AA13
ADC0_AIN3
ADC0_AIN3
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
AB13
ADC0_AIN4
ADC0_AIN4
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
AC13
ADC0_AIN5
ADC0_AIN5
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
AD13
ADC0_AIN6
ADC0_AIN6
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
AE13
ADC0_AIN7
ADC0_AIN7
0x0
A
Z
Z
Mode0
VDDA_ADC0
NA
25
NA
Analog
AE14
ADC0_VREFN
ADC0_VREFN
0x0
AP
Z
Z
Mode0
VDDA_ADC0
NA
NA
NA
Analog
AD14
ADC0_VREFP
ADC0_VREFP
0x0
AP
Z
Z
Mode0
VDDA_ADC0
NA
NA
NA
Analog
AC16
ADC1_AIN0
ADC1_AIN0
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
AB16
ADC1_AIN1
ADC1_AIN1
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
AA16
ADC1_AIN2
ADC1_AIN2
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
AB15
ADC1_AIN3
ADC1_AIN3
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
AA15
ADC1_AIN4
ADC1_AIN4
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
Y15
ADC1_AIN5
ADC1_AIN5
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
AE16
ADC1_AIN6
ADC1_AIN6
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
AD16
ADC1_AIN7
ADC1_AIN7
0x0
A
Z
Z
Mode0
VDDA_ADC1
NA
25
NA
Analog
AD15
ADC1_VREFN
ADC1_VREFN
0x0
AP
Z
Z
Mode0
VDDA_ADC1
NA
NA
NA
Analog
AE15
ADC1_VREFP
ADC1_VREFP
0x0
AP
Z
Z
Mode0
VDDA_ADC1
NA
NA
NA
Analog
AE18
cam0_data0
cam0_data0
0x0
I
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
cam1_data9
0x2
I
I2C1_SDA
0x3
IOD
pr0_pru1_gpo16
0x4
O
pr0_pru1_gpi16
0x5
I
ehrpwm0_synco
0x6
O
gpio5_19
0x7
IO
cam0_data1
0x0
I
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
cam1_data8
0x2
I
I2C1_SCL
0x3
IOD
pr0_pru1_gpo17
0x4
O
pr0_pru1_gpi17
0x5
I
ehrpwm3_synco
0x6
O
gpio5_20
0x7
IO
AB18
22
cam0_data1
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
Y18
AA18
AE19
AD19
AE20
AD20
PIN NAME [2]
cam0_data2
cam0_data3
cam0_data4
cam0_data5
cam0_data6
cam0_data7
SIGNAL NAME [3]
MODE [4]
TYPE [5]
cam0_data2
0x0
I
mmc1_clk
0x1
IO
cam1_data10
0x2
I
qspi_clk
0x3
IO
gpio4_24
0x7
IO
cam0_data3
0x0
I
mmc1_cmd
0x1
IO
cam1_data11
0x2
I
qspi_csn
0x3
O
gpio4_25
0x7
IO
cam0_data4
0x0
I
mmc1_dat0
0x1
IO
cam1_wen
0x2
I
qspi_d0
0x3
IO
ehrpwm3A
0x6
O
gpio4_26
0x7
IO
cam0_data5
0x0
I
mmc1_dat1
0x1
IO
qspi_d1
0x3
I
ehrpwm3B
0x6
O
gpio4_27
0x7
IO
cam0_data6
0x0
I
mmc1_dat2
0x1
IO
qspi_d2
0x3
I
ehrpwm1A
0x6
O
gpio4_28
0x7
IO
cam0_data7
0x0
I
mmc1_dat3
0x1
IO
qspi_d3
0x3
I
ehrpwm1B
0x6
O
gpio4_29
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
AB19
AA19
AC18
AE17
AC20
24
PIN NAME [2]
cam0_data8
cam0_data9
cam0_field
cam0_hd
cam0_pclk
SIGNAL NAME [3]
MODE [4]
TYPE [5]
cam0_data8
0x0
I
dss_data18
0x2
O
pr0_pru0_gpo15
0x3
O
spi2_cs2
0x4
IO
pr0_pru0_gpi15
0x5
I
EMU7
0x6
IO
gpio4_5
0x7
IO
I2C2_SCL
0x8
IOD
cam0_data9
0x0
I
dss_data17
0x2
O
pr0_pru0_gpo16
0x3
O
spi2_cs3
0x4
IO
pr0_pru0_gpi16
0x5
I
EMU8
0x6
IO
gpio4_6
0x7
IO
cam0_field
0x0
IO
dss_data21
0x2
O
cam0_data10
0x3
I
spi2_sclk
0x4
IO
cam1_data10
0x5
I
EMU4
0x6
IO
gpio4_2
0x7
IO
cam0_hd
0x0
IO
dss_data23
0x2
O
pr1_edio_sof
0x3
O
spi2_cs1
0x4
IO
EMU10
0x5
IO
EMU2
0x6
IO
gpio4_0
0x7
IO
cam0_pclk
0x0
I
dss_data19
0x2
O
pr0_pru0_gpo14
0x3
O
spi2_cs0
0x4
IO
pr0_pru0_gpi14
0x5
I
EMU6
0x6
IO
gpio4_4
0x7
IO
I2C2_SDA
0x8
IOD
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
AD18
AD17
AB20
AC21
AD21
PIN NAME [2]
cam0_vd
cam0_wen
cam1_data0
cam1_data1
cam1_data2
SIGNAL NAME [3]
MODE [4]
TYPE [5]
cam0_vd
0x0
IO
dss_data22
0x2
O
pr1_edio_outvalid
0x3
O
spi2_d1
0x4
IO
EMU11
0x5
IO
EMU3
0x6
IO
gpio4_1
0x7
IO
cam0_wen
0x0
I
dss_data20
0x2
O
cam0_data11
0x3
I
spi2_d0
0x4
IO
cam1_data11
0x5
I
EMU5
0x6
IO
gpio4_3
0x7
IO
cam1_data0
0x0
I
uart1_rxd
0x1
IO
spi3_d0
0x2
IO
I2C2_SDA
0x3
IOD
ehrpwm0_tripzone_input
0x6
I
gpio4_14
0x7
IO
cam1_data1
0x0
I
uart1_txd
0x1
IO
spi3_d1
0x2
IO
I2C2_SCL
0x3
IOD
ehrpwm0_synci
0x6
I
gpio4_15
0x7
IO
cam1_data2
0x0
I
uart1_ctsn
0x1
IO
spi3_cs0
0x2
IO
mmc2_clk
0x3
IO
pr0_pru1_gpo10
0x4
O
pr0_pru1_gpi10
0x5
I
ehrpwm1_tripzone_input
0x6
I
gpio4_16
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
AE22
AD22
AE23
AD23
26
PIN NAME [2]
cam1_data3
cam1_data4
cam1_data5
cam1_data6
SIGNAL NAME [3]
MODE [4]
TYPE [5]
cam1_data3
0x0
I
uart1_rtsn
0x1
O
spi3_sclk
0x2
IO
mmc2_cmd
0x3
IO
pr0_pru1_gpo11
0x4
O
pr0_pru1_gpi11
0x5
I
pr1_edc_latch0_in
0x6
I
gpio4_17
0x7
IO
cam1_data4
0x0
I
uart1_rin
0x1
I
uart2_rxd
0x2
IO
mmc2_dat0
0x3
IO
pr0_pru1_gpo12
0x4
O
pr0_pru1_gpi12
0x5
I
pr1_edc_latch1_in
0x6
I
gpio4_18
0x7
IO
uart0_dcdn
0x8
I
cam1_data5
0x0
I
uart1_dsrn
0x1
I
uart2_txd
0x2
IO
mmc2_dat1
0x3
IO
pr0_pru1_gpo13
0x4
O
pr0_pru1_gpi13
0x5
I
pr1_edio_latch_in
0x6
I
gpio4_19
0x7
IO
cam1_data6
0x0
I
uart1_dcdn
0x1
I
uart2_ctsn
0x2
IO
mmc2_dat2
0x3
IO
pr0_pru1_gpo14
0x4
O
pr0_pru1_gpi14
0x5
I
pr1_edio_data_in0
0x6
I
gpio4_20
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Copyright © 2014–2016, Texas Instruments Incorporated
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
AE24
AD24
AC24
AC25
PIN NAME [2]
cam1_data7
cam1_data8
cam1_data9
cam1_field
SIGNAL NAME [3]
MODE [4]
TYPE [5]
cam1_data7
0x0
I
uart1_dtrn
0x1
O
uart2_rtsn
0x2
O
mmc2_dat3
0x3
IO
pr0_pru1_gpo15
0x4
O
pr0_pru1_gpi15
0x5
I
pr1_edio_data_in1
0x6
I
gpio4_21
0x7
IO
cam1_data8
0x0
I
xdma_event_intr3
0x1
I
spi0_cs2
0x2
IO
pr0_pru1_gpo0
0x3
O
spi2_d0
0x4
IO
pr0_pru1_gpi0
0x5
I
EMU10
0x6
IO
gpio4_8
0x7
IO
uart0_rtsn
0x8
O
cam1_data9
0x0
I
dss_data16
0x2
O
pr0_pru0_gpo17
0x3
O
spi2_cs3
0x4
IO
pr0_pru0_gpi17
0x5
I
EMU9
0x6
IO
gpio4_7
0x7
IO
uart0_ctsn
0x8
I
cam1_field
0x0
IO
xdma_event_intr7
0x1
I
ext_hw_trigger
0x2
I
cam0_data10
0x3
I
spi2_cs1
0x4
IO
cam1_data10
0x5
I
ehrpwm1B
0x6
O
gpio4_12
0x7
IO
ehrpwm3A
0x8
O
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
AD25
AE21
AC23
AB25
PIN NAME [2]
cam1_hd
cam1_pclk
cam1_vd
cam1_wen
SIGNAL NAME [3]
MODE [4]
TYPE [5]
cam1_hd
0x0
IO
xdma_event_intr4
0x1
I
spi0_cs3
0x2
IO
pr0_pru1_gpo1
0x3
O
spi2_cs0
0x4
IO
pr0_pru1_gpi1
0x5
I
ehrpwm0A
0x6
O
gpio4_9
0x7
IO
cam1_pclk
0x0
I
xdma_event_intr6
0x1
I
spi1_cs3
0x2
IO
pr0_pru1_gpo3
0x3
O
spi2_sclk
0x4
IO
pr0_pru1_gpi3
0x5
I
ehrpwm1A
0x6
O
gpio4_11
0x7
IO
cam1_vd
0x0
IO
xdma_event_intr5
0x1
I
spi1_cs2
0x2
IO
pr0_pru1_gpo2
0x3
O
spi2_cs2
0x4
IO
pr0_pru1_gpi2
0x5
I
ehrpwm0B
0x6
O
gpio4_10
0x7
IO
cam1_wen
0x0
I
xdma_event_intr8
0x1
I
pr1_edio_sof
0x2
O
cam0_data11
0x3
I
spi2_d1
0x4
IO
cam1_data11
0x5
I
EMU11
0x6
IO
gpio4_13
0x7
IO
ehrpwm3B
0x8
O
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV2
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
F19
CAP_VBB_MPU
CAP_VBB_MPU
NA
A
NA
NA
NA
NA
NA
NA
NA
NA
D6
CAP_VDDS1P8V_IOLDO
CAP_VDDS1P8V_IOLDO
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
AD3
CAP_VDD_RTC
CAP_VDD_RTC
NA
A
NA
NA
NA
NA
NA
NA
NA
NA
E13
CAP_VDD_SRAM_CORE
CAP_VDD_SRAM_CORE
NA
A
NA
NA
NA
NA
NA
NA
NA
NA
E14
CAP_VDD_SRAM_MPU
CAP_VDD_SRAM_MPU
NA
A
NA
NA
NA
NA
NA
NA
NA
NA
28
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
H20
PIN NAME [2]
clkreq
SIGNAL NAME [3]
MODE [4]
TYPE [5]
clkreq
0x0
O
gpio0_24
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PU
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
N1
ddr_a0
ddr_a0
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
L1
ddr_a1
ddr_a1
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
L2
ddr_a2
ddr_a2
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
P2
ddr_a3
ddr_a3
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
P1
ddr_a4
ddr_a4
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
R5
ddr_a5
ddr_a5
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
R4
ddr_a6
ddr_a6
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
R3
ddr_a7
ddr_a7
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
R2
ddr_a8
ddr_a8
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
R1
ddr_a9
ddr_a9
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
M6
ddr_a10
ddr_a10
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
T5
ddr_a11
ddr_a11
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
T4
ddr_a12
ddr_a12
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
N5
ddr_a13
ddr_a13
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
T3
ddr_a14
ddr_a14
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
T2
ddr_a15
ddr_a15
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
K1
ddr_ba0
ddr_ba0
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
K2
ddr_ba1
ddr_ba1
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
K3
ddr_ba2
ddr_ba2
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
N3
ddr_casn
ddr_casn
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
M2
ddr_ck
ddr_ck
0x0
O
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
M3
ddr_cke0
ddr_cke0
0x0
O
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
Terminal Configuration and Functions
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AM4376, AM4377, AM4378, AM4379
SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
PIN NAME [2]
SIGNAL NAME [3]
MODE [4]
TYPE [5]
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
N6
ddr_cke1
ddr_cke1
0x0
O
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
M5
ddr_csn0
ddr_csn0
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
M4
ddr_csn1
ddr_csn1
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
E3
ddr_d0
ddr_d0
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
E2
ddr_d1
ddr_d1
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
E1
ddr_d2
ddr_d2
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
F3
ddr_d3
ddr_d3
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
G4
ddr_d4
ddr_d4
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
G3
ddr_d5
ddr_d5
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
G2
ddr_d6
ddr_d6
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
G1
ddr_d7
ddr_d7
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
H1
ddr_d8
ddr_d8
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
J6
ddr_d9
ddr_d9
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
J5
ddr_d10
ddr_d10
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
J4
ddr_d11
ddr_d11
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
J3
ddr_d12
ddr_d12
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
K6
ddr_d13
ddr_d13
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
K5
ddr_d14
ddr_d14
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
K4
ddr_d15
ddr_d15
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
V5
ddr_d16
ddr_d16
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
V4
ddr_d17
ddr_d17
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
V3
ddr_d18
ddr_d18
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
V2
ddr_d19
ddr_d19
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
30
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
PIN NAME [2]
SIGNAL NAME [3]
MODE [4]
TYPE [5]
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
V1
ddr_d20
ddr_d20
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
W4
ddr_d21
ddr_d21
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
W5
ddr_d22
ddr_d22
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
W6
ddr_d23
ddr_d23
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
Y2
ddr_d24
ddr_d24
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
Y3
ddr_d25
ddr_d25
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
Y4
ddr_d26
ddr_d26
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
AA3
ddr_d27
ddr_d27
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
AB2
ddr_d28
ddr_d28
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
AB1
ddr_d29
ddr_d29
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
AC1
ddr_d30
ddr_d30
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
AC2
ddr_d31
ddr_d31
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
F4
ddr_dqm0
ddr_dqm0
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
H2
ddr_dqm1
ddr_dqm1
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
V6
ddr_dqm2
ddr_dqm2
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
Y1
ddr_dqm3
ddr_dqm3
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
F2
ddr_dqs0
ddr_dqs0
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
J2
ddr_dqs1
ddr_dqs1
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
W1
ddr_dqs2
ddr_dqs2
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
AA1
ddr_dqs3
ddr_dqs3
0x0
IO
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
F1
ddr_dqsn0
ddr_dqsn0
0x0
IO
PU
Mode0
VDDS_DDR
Yes
8
PU/PD
LVCMOS/HST
L/HSUL_12
J1
ddr_dqsn1
ddr_dqsn1
0x0
IO
PU
Mode0
VDDS_DDR
Yes
8
PU/PD
LVCMOS/HST
L/HSUL_12
W2
ddr_dqsn2
ddr_dqsn2
0x0
IO
PU
Mode0
VDDS_DDR
Yes
8
PU/PD
LVCMOS/HST
L/HSUL_12
Terminal Configuration and Functions
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Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
PIN NAME [2]
SIGNAL NAME [3]
MODE [4]
TYPE [5]
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
AA2
ddr_dqsn3
ddr_dqsn3
0x0
IO
PU
Mode0
VDDS_DDR
Yes
8
PU/PD
LVCMOS/HST
L/HSUL_12
M1
ddr_nck
ddr_nck
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
U1
ddr_odt0
ddr_odt0
0x0
O
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
U2
ddr_odt1
ddr_odt1
0x0
O
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
N2
ddr_rasn
ddr_rasn
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
T1
ddr_resetn
ddr_resetn
0x0
O
PD
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS
T6
ddr_vref
ddr_vref
0x0
AP (19)
NA
NA
Mode0
VDDS_DDR
NA
NA
NA
Analog
AC3
ddr_vtp
ddr_vtp
0x0
I (20)
NA
NA
Mode0
VDDS_DDR
NA
NA
NA
Analog
N4
ddr_wen
ddr_wen
0x0
O
PU
Mode0
VDDS_DDR
YES
8
PU/PD
LVCMOS/HST
L/HSUL_12
A24
dss_ac_bias_en
dss_ac_bias_en
0x0
O
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
gpmc_a11
0x1
O
gpmc_a4
0x2
O
pr1_edio_data_in5
0x3
I
pr1_edio_data_out5
0x4
O
pr0_pru1_gpo9
0x5
O
pr0_pru1_gpi9
0x6
I
gpio2_25
0x7
IO
dss_data0
0x0
IO
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
gpmc_a0
0x1
O
pr1_mii_mt0_clk
0x2
I
ehrpwm2A
0x3
O
pr1_pru0_gpo0
0x5
O
pr1_pru0_gpi0
0x6
I
gpio2_6
0x7
IO
dss_data1
0x0
IO
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
gpmc_a1
0x1
O
pr1_mii0_txen
0x2
O
ehrpwm2B
0x3
O
pr1_pru0_gpo1
0x5
O
pr1_pru0_gpi1
0x6
I
gpio2_7
0x7
IO
B22
A21
32
dss_data0 (4)
dss_data1 (4)
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B21
C21
A20
B20
C20
PIN NAME [2]
dss_data2 (4)
dss_data3 (4)
dss_data4 (4)
dss_data5 (4)
dss_data6 (4)
SIGNAL NAME [3]
MODE [4]
TYPE [5]
dss_data2
0x0
IO
gpmc_a2
0x1
O
pr1_mii0_txd3
0x2
O
ehrpwm2_tripzone_input
0x3
I
pr1_pru0_gpo2
0x5
O
pr1_pru0_gpi2
0x6
I
gpio2_8
0x7
IO
dss_data3
0x0
IO
gpmc_a3
0x1
O
pr1_mii0_txd2
0x2
O
ehrpwm0_synco
0x3
O
pr1_pru0_gpo3
0x5
O
pr1_pru0_gpi3
0x6
I
gpio2_9
0x7
IO
dss_data4
0x0
IO
gpmc_a4
0x1
O
pr1_mii0_txd1
0x2
O
eQEP2A_in
0x3
I
pr1_pru0_gpo4
0x5
O
pr1_pru0_gpi4
0x6
I
gpio2_10
0x7
IO
dss_data5
0x0
IO
gpmc_a5
0x1
O
pr1_mii0_txd0
0x2
O
eQEP2B_in
0x3
I
pr1_pru0_gpo5
0x5
O
pr1_pru0_gpi5
0x6
I
gpio2_11
0x7
IO
dss_data6
0x0
IO
gpmc_a6
0x1
O
pr1_edio_data_in6
0x2
I
eQEP2_index
0x3
IO
pr1_edio_data_out6
0x4
O
pr1_pru0_gpo6
0x5
O
pr1_pru0_gpi6
0x6
I
gpio2_12
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
E19
A19
B19
A18
34
PIN NAME [2]
dss_data7 (4)
dss_data8 (4)
dss_data9 (4)
dss_data10 (4)
SIGNAL NAME [3]
MODE [4]
TYPE [5]
dss_data7
0x0
IO
gpmc_a7
0x1
O
pr1_edio_data_in7
0x2
I
eQEP2_strobe
0x3
IO
pr1_edio_data_out7
0x4
O
pr1_pru0_gpo7
0x5
O
pr1_pru0_gpi7
0x6
I
gpio2_13
0x7
IO
dss_data8
0x0
IO
gpmc_a12
0x1
O
ehrpwm1_tripzone_input
0x2
I
mcasp0_aclkx
0x3
IO
uart5_txd
0x4
O
pr1_mii0_rxd3
0x5
I
uart2_ctsn
0x6
IO
gpio2_14
0x7
IO
dss_data9
0x0
IO
gpmc_a13
0x1
O
ehrpwm0_synco
0x2
O
mcasp0_fsx
0x3
IO
uart5_rxd
0x4
I
pr1_mii0_rxd2
0x5
I
uart2_rtsn
0x6
O
gpio2_15
0x7
IO
dss_data10
0x0
IO
gpmc_a14
0x1
O
ehrpwm1A
0x2
O
mcasp0_axr0
0x3
IO
pr1_mii0_rxd1
0x5
I
uart3_ctsn
0x6
IO
gpio2_16
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B18
C19
D19
C17
PIN NAME [2]
dss_data11 (4)
dss_data12 (4)
dss_data13 (4)
dss_data14 (4)
SIGNAL NAME [3]
MODE [4]
TYPE [5]
dss_data11
0x0
IO
gpmc_a15
0x1
O
ehrpwm1B
0x2
O
mcasp0_ahclkr
0x3
IO
mcasp0_axr2
0x4
IO
pr1_mii0_rxd0
0x5
I
uart3_rtsn
0x6
O
gpio2_17
0x7
IO
spi3_cs1
0x8
IO
dss_data12
0x0
IO
gpmc_a16
0x1
O
eQEP1A_in
0x2
I
mcasp0_aclkr
0x3
IO
mcasp0_axr2
0x4
IO
pr1_mii0_rxlink
0x5
I
uart4_ctsn
0x6
I
gpio0_8
0x7
IO
spi3_sclk
0x8
IO
dss_data13
0x0
IO
gpmc_a17
0x1
O
eQEP1B_in
0x2
I
mcasp0_fsr
0x3
IO
mcasp0_axr3
0x4
IO
pr1_mii0_rxer
0x5
I
uart4_rtsn
0x6
O
gpio0_9
0x7
IO
spi3_d0
0x8
IO
dss_data14
0x0
IO
gpmc_a18
0x1
O
eQEP1_index
0x2
IO
mcasp0_axr1
0x3
IO
uart5_rxd
0x4
I
pr1_mii_mr0_clk
0x5
I
uart5_ctsn
0x6
I
gpio0_10
0x7
IO
spi3_d1
0x8
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
D17
A23
A22
B23
36
PIN NAME [2]
dss_data15 (4)
dss_hsync (5)
dss_pclk
dss_vsync (6)
SIGNAL NAME [3]
MODE [4]
TYPE [5]
dss_data15
0x0
IO
gpmc_a19
0x1
O
eQEP1_strobe
0x2
IO
mcasp0_ahclkx
0x3
IO
mcasp0_axr3
0x4
IO
pr1_mii0_rxdv
0x5
I
uart5_rtsn
0x6
O
gpio0_11
0x7
IO
spi3_cs0
0x8
IO
dss_hsync
0x0
O
gpmc_a9
0x1
O
gpmc_a2
0x2
O
pr1_edio_data_in3
0x3
I
pr1_edio_data_out3
0x4
O
pr0_pru1_gpo7
0x5
O
pr0_pru1_gpi7
0x6
I
gpio2_23
0x7
IO
dss_pclk
0x0
O
gpmc_a10
0x1
O
gpmc_a3
0x2
O
pr1_edio_data_in4
0x3
I
pr1_edio_data_out4
0x4
O
pr0_pru1_gpo8
0x5
O
pr0_pru1_gpi8
0x6
I
gpio2_24
0x7
IO
dss_vsync
0x0
O
gpmc_a8
0x1
O
gpmc_a1
0x2
O
pr1_edio_data_in2
0x3
I
pr1_edio_data_out2
0x4
O
pr0_pru1_gpo6
0x5
O
pr0_pru1_gpi6
0x6
I
gpio2_22
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV6
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
G24
N23
T24
PIN NAME [2]
eCAP0_in_PWM0_out
EMU0
EMU1
SIGNAL NAME [3]
MODE [4]
TYPE [5]
eCAP0_in_PWM0_out
0x0
IO
uart3_txd
0x1
IO
spi1_cs1
0x2
IO
pr1_ecap0_ecap_capin_apwm_o
0x3
IO
spi1_sclk
0x4
IO
mmc0_sdwp
0x5
I
xdma_event_intr2
0x6
I
gpio0_7
0x7
IO
ehrpwm2B
0x8
O
timer1
0x9
IO
EMU0
0x0
IO
gpio3_7
0x7
IO
EMU1
0x0
IO
gpio3_8
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
PU
PU
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
PU
PU
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
G25
EXTINTn
nNMI
0x0
I
OFF
PU
Mode0
VDDSHV3
Yes
NA
PU/PD
LVCMOS
D25
gpio5_8
pr1_mii0_col
0x5
I
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
gpio5_8
0x7
IO
pr1_mii1_col
0x5
I
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
gpio5_9
0x7
IO
I2C1_SCL
0x1
IOD
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
pr1_mii0_crs
0x5
I
gpio5_10
0x7
IO
pr1_mii1_crs
0x5
I
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
gpio5_11
0x7
IO
I2C1_SDA
0x1
IOD
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
pr1_mii0_rxlink
0x5
I
gpio5_12
0x7
IO
pr1_mii1_rxlink
0x5
I
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
gpio5_13
0x7
IO
gpmc_a0
0x0
O
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
gmii2_txen
0x1
O
rgmii2_tctl
0x2
O
rmii2_txen
0x3
O
gpmc_a16
0x4
O
pr1_mii1_txen
0x5
O
ehrpwm1_tripzone_input
0x6
I
gpio1_16
0x7
IO
F24
G20
F23
E25
E24
C3
gpio5_9
gpio5_10
gpio5_11
gpio5_12
gpio5_13
gpmc_a0
Terminal Configuration and Functions
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www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
C5
C6
A4
D7
38
PIN NAME [2]
gpmc_a1
gpmc_a2
gpmc_a3
gpmc_a4
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_a1
0x0
O
gmii2_rxdv
0x1
I
rgmii2_rctl
0x2
I
mmc2_dat0
0x3
IO
gpmc_a17
0x4
O
pr1_mii1_rxdv
0x5
I
ehrpwm0_synco
0x6
O
gpio1_17
0x7
IO
gpmc_a2
0x0
O
gmii2_txd3
0x1
O
rgmii2_td3
0x2
O
mmc2_dat1
0x3
IO
gpmc_a18
0x4
O
pr1_mii1_txd3
0x5
O
ehrpwm1A
0x6
O
gpio1_18
0x7
IO
gpmc_a3
0x0
O
gmii2_txd2
0x1
O
rgmii2_td2
0x2
O
mmc2_dat2
0x3
IO
gpmc_a19
0x4
O
pr1_mii1_txd2
0x5
O
ehrpwm1B
0x6
O
gpio1_19
0x7
IO
gpmc_a4
0x0
O
gmii2_txd1
0x1
O
rgmii2_td1
0x2
O
rmii2_txd1
0x3
O
gpmc_a20
0x4
O
pr1_mii1_txd1
0x5
O
eQEP1A_in
0x6
I
gpio1_20
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
E7
E8
F6
F7
PIN NAME [2]
gpmc_a5
gpmc_a6
gpmc_a7
gpmc_a8
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_a5
0x0
O
gmii2_txd0
0x1
O
rgmii2_td0
0x2
O
rmii2_txd0
0x3
O
gpmc_a21
0x4
O
pr1_mii1_txd0
0x5
O
eQEP1B_in
0x6
I
gpio1_21
0x7
IO
gpmc_a6
0x0
O
gmii2_txclk
0x1
I
rgmii2_tclk
0x2
O
mmc2_dat4
0x3
IO
gpmc_a22
0x4
O
pr1_mii_mt1_clk
0x5
I
eQEP1_index
0x6
IO
gpio1_22
0x7
IO
gpmc_a7
0x0
O
gmii2_rxclk
0x1
I
rgmii2_rclk
0x2
I
mmc2_dat5
0x3
IO
gpmc_a23
0x4
O
pr1_mii_mr1_clk
0x5
I
eQEP1_strobe
0x6
IO
gpio1_23
0x7
IO
gpmc_a8
0x0
O
gmii2_rxd3
0x1
I
rgmii2_rd3
0x2
I
mmc2_dat6
0x3
IO
gpmc_a24
0x4
O
pr1_mii1_rxd3
0x5
I
mcasp0_aclkx
0x6
IO
gpio1_24
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B4
G8
D8
B5
A5
B6
A6
40
PIN NAME [2]
gpmc_a9
gpmc_a10
gpmc_a11
gpmc_ad0
gpmc_ad1
gpmc_ad2
gpmc_ad3
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_a9
0x0
O
gmii2_rxd2
0x1
I
rgmii2_rd2
0x2
I
mmc2_dat7
0x3
IO
gpmc_a25
0x4
O
pr1_mii1_rxd2
0x5
I
mcasp0_fsx
0x6
IO
gpio1_25
0x7
IO
rmii2_crs_dv
0x8
I
gpmc_a10
0x0
O
gmii2_rxd1
0x1
I
rgmii2_rd1
0x2
I
rmii2_rxd1
0x3
I
gpmc_a26
0x4
O
pr1_mii1_rxd1
0x5
I
mcasp0_axr0
0x6
IO
gpio1_26
0x7
IO
gpmc_a11
0x0
O
gmii2_rxd0
0x1
I
rgmii2_rd0
0x2
I
rmii2_rxd0
0x3
I
gpmc_a27
0x4
O
pr1_mii1_rxd0
0x5
I
mcasp0_axr1
0x6
IO
gpio1_27
0x7
IO
gpmc_ad0
0x0
IO
mmc1_dat0
0x1
IO
gpio1_0
0x7
IO
gpmc_ad1
0x0
IO
mmc1_dat1
0x1
IO
gpio1_1
0x7
IO
gpmc_ad2
0x0
IO
mmc1_dat2
0x1
IO
gpio1_2
0x7
IO
gpmc_ad3
0x0
IO
mmc1_dat3
0x1
IO
gpio1_3
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B7
A7
C8
B8
B10
A10
PIN NAME [2]
gpmc_ad4
gpmc_ad5
gpmc_ad6
gpmc_ad7
gpmc_ad8
gpmc_ad9
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_ad4
0x0
IO
mmc1_dat4
0x1
IO
gpio1_4
0x7
IO
gpmc_ad5
0x0
IO
mmc1_dat5
0x1
IO
gpio1_5
0x7
IO
gpmc_ad6
0x0
IO
mmc1_dat6
0x1
IO
gpio1_6
0x7
IO
gpmc_ad7
0x0
IO
mmc1_dat7
0x1
IO
gpio1_7
0x7
IO
gpmc_ad8
0x0
IO
dss_data23
0x1
O
mmc1_dat0
0x2
IO
mmc2_dat4
0x3
IO
ehrpwm2A
0x4
O
pr1_mii_mt0_clk
0x5
I
spi3_sclk
0x6
IO
gpio0_22
0x7
IO
spi3_cs1
0x8
IO
gpio5_26
0x9
IO
gpmc_ad9
0x0
IO
dss_data22
0x1
O
mmc1_dat1
0x2
IO
mmc2_dat5
0x3
IO
ehrpwm2B
0x4
O
pr1_mii0_col
0x5
I
spi3_d0
0x6
IO
gpio0_23
0x7
IO
gpio5_25
0x9
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
F11
D11
E11
C11
42
PIN NAME [2]
gpmc_ad10
gpmc_ad11
gpmc_ad12
gpmc_ad13
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_ad10
0x0
IO
dss_data21
0x1
O
mmc1_dat2
0x2
IO
mmc2_dat6
0x3
IO
ehrpwm2_tripzone_input
0x4
I
pr1_mii0_txen
0x5
O
spi3_d1
0x6
IO
gpio0_26
0x7
IO
gpio5_24
0x9
IO
gpmc_ad11
0x0
IO
dss_data20
0x1
O
mmc1_dat3
0x2
IO
mmc2_dat7
0x3
IO
ehrpwm0_synco
0x4
O
pr1_mii0_txd3
0x5
O
spi3_cs0
0x6
IO
gpio0_27
0x7
IO
gpio5_23
0x9
IO
gpmc_ad12
0x0
IO
dss_data19
0x1
O
mmc1_dat4
0x2
IO
mmc2_dat0
0x3
IO
eQEP2A_in
0x4
I
pr1_mii0_txd2
0x5
O
pr1_pru0_gpi10
0x6
I
gpio1_12
0x7
IO
mcasp0_aclkx
0x8
IO
pr1_pru0_gpo10
0x9
O
gpmc_ad13
0x0
IO
dss_data18
0x1
O
mmc1_dat5
0x2
IO
mmc2_dat1
0x3
IO
eQEP2B_in
0x4
I
pr1_mii0_txd1
0x5
O
pr1_pru0_gpi11
0x6
I
gpio1_13
0x7
IO
mcasp0_fsx
0x8
IO
pr1_pru0_gpo11
0x9
O
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B11
A11
A9
C10
PIN NAME [2]
gpmc_ad14
gpmc_ad15
gpmc_advn_ale
gpmc_be0n_cle
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_ad14
0x0
IO
dss_data17
0x1
O
mmc1_dat6
0x2
IO
mmc2_dat2
0x3
IO
eQEP2_index
0x4
IO
pr1_mii0_txd0
0x5
O
pr1_pru0_gpi16
0x6
I
gpio1_14
0x7
IO
mcasp0_axr0
0x8
IO
gpmc_ad15
0x0
IO
dss_data16
0x1
O
mmc1_dat7
0x2
IO
mmc2_dat3
0x3
IO
eQEP2_strobe
0x4
IO
pr1_ecap0_ecap_capin_apwm_o
0x5
IO
gpio1_15
0x7
IO
mcasp0_axr1
0x8
IO
spi3_cs1
0x9
IO
gpmc_advn_ale
0x0
O
spi0_cs3
0x1
IO
timer4
0x2
IO
qspi_d0
0x3
IO
gpio2_2
0x7
IO
gpmc_be0n_cle
0x0
O
spi1_cs3
0x1
IO
timer5
0x2
IO
qspi_d3
0x3
I
pr1_mii1_rxlink
0x4
I
gpmc_a5
0x5
O
spi3_cs1
0x6
IO
gpio2_5
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
A3
A12
A8
B9
F10
44
PIN NAME [2]
gpmc_be1n
gpmc_clk
gpmc_csn0
gpmc_csn1
gpmc_csn2
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_be1n
0x0
O
gmii2_col
0x1
I
gpmc_csn6
0x2
O
mmc2_dat3
0x3
IO
gpmc_dir
0x4
O
pr1_mii1_col
0x5
I
mcasp0_aclkr
0x6
IO
gpio1_28
0x7
IO
gpmc_clk
0x0
IO
gpmc_wait1
0x2
I
mmc2_clk
0x3
IO
pr1_mii1_crs
0x4
I
pr1_mdio_mdclk
0x5
O
mcasp0_fsr
0x6
IO
gpio2_1
0x7
IO
gpio0_4
0x9
IO
gpmc_csn0
0x0
O
qspi_csn
0x3
O
gpio1_29
0x7
IO
gpmc_csn1
0x0
O
gpmc_clk
0x1
IO
mmc1_clk
0x2
IO
pr1_edio_data_in6
0x3
I
pr1_edio_data_out6
0x4
O
pr1_pru0_gpo8
0x5
O
pr1_pru0_gpi8
0x6
I
gpio1_30
0x7
IO
gpmc_csn2
0x0
O
gpmc_be1n
0x1
O
mmc1_cmd
0x2
IO
pr1_edio_data_in7
0x3
I
pr1_edio_data_out7
0x4
O
pr1_pru0_gpo9
0x5
O
pr1_pru0_gpi9
0x6
I
gpio1_31
0x7
IO
gmii2_crs
0x8
I
rmii2_crs_dv
0x9
I
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PU
PU
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B12
E10
A2
D10
B3
PIN NAME [2]
gpmc_csn3
gpmc_oen_ren
gpmc_wait0
gpmc_wen
gpmc_wpn
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gpmc_csn3
0x0
O
gpmc_wait0
0x1
I
qspi_clk
0x2
IO
mmc2_cmd
0x3
IO
pr1_mii0_crs
0x4
I
pr1_mdio_data
0x5
IO
EMU4
0x6
IO
gpio2_0
0x7
IO
gmii2_crs
0x8
I
rmii2_crs_dv
0x9
I
gpmc_oen_ren
0x0
O
spi0_cs2
0x1
IO
timer7
0x2
IO
qspi_d1
0x3
I
gpio2_3
0x7
IO
gpmc_wait0
0x0
I
gmii2_crs
0x1
I
gpmc_csn4
0x2
O
rmii2_crs_dv
0x3
I
mmc1_sdcd
0x4
I
pr1_mii1_crs
0x5
I
uart4_rxd
0x6
I
gpio0_30
0x7
IO
gpio5_30
0x9
IO
gpmc_wen
0x0
O
spi1_cs2
0x1
IO
timer6
0x2
IO
qspi_d2
0x3
I
gpio2_4
0x7
IO
gpmc_wpn
0x0
O
gmii2_rxer
0x1
I
gpmc_csn5
0x2
O
rmii2_rxer
0x3
I
mmc2_sdcd
0x4
I
pr1_mii1_rxer
0x5
I
uart4_txd
0x6
O
gpio0_31
0x7
IO
gpio5_31
0x9
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PU
PU
Mode7
VDDSHV9
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV10
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV11
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
Y22
AB24
L23
N24
M24
46
PIN NAME [2]
I2C0_SCL
I2C0_SDA
mcasp0_aclkr
mcasp0_aclkx
mcasp0_ahclkr
SIGNAL NAME [3]
MODE [4]
TYPE [5]
I2C0_SCL
0x0
IOD
timer7
0x1
IO
uart2_rtsn
0x2
O
eCAP1_in_PWM1_out
0x3
IO
gpio3_6
0x7
IO
I2C0_SDA
0x0
IOD
timer4
0x1
IO
uart2_ctsn
0x2
IO
eCAP2_in_PWM2_out
0x3
IO
gpio3_5
0x7
IO
mcasp0_aclkr
0x0
IO
eQEP0A_in
0x1
I
mcasp0_axr2
0x2
IO
mcasp1_aclkx
0x3
IO
mmc0_sdwp
0x4
I
pr0_pru0_gpo4
0x5
O
pr0_pru0_gpi4
0x6
I
gpio3_18
0x7
IO
gpio0_18
0x9
IO
mcasp0_aclkx
0x0
IO
ehrpwm0A
0x1
O
spi0_cs3
0x2
IO
spi1_sclk
0x3
IO
mmc0_sdcd
0x4
I
pr0_pru0_gpo0
0x5
O
pr0_pru0_gpi0
0x6
I
gpio3_14
0x7
IO
mcasp0_ahclkr
0x0
IO
ehrpwm0_synci
0x1
I
mcasp0_axr2
0x2
IO
spi1_cs0
0x3
IO
eCAP2_in_PWM2_out
0x4
IO
pr0_pru0_gpo3
0x5
O
pr0_pru0_gpi3
0x6
I
gpio3_17
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
L24
H23
M25
K23
PIN NAME [2]
mcasp0_ahclkx
mcasp0_axr0
mcasp0_axr1
mcasp0_fsr
SIGNAL NAME [3]
MODE [4]
TYPE [5]
mcasp0_ahclkx
0x0
IO
eQEP0_strobe
0x1
IO
mcasp0_axr3
0x2
IO
mcasp1_axr1
0x3
IO
EMU4
0x4
IO
pr0_pru0_gpo7
0x5
O
pr0_pru0_gpi7
0x6
I
gpio3_21
0x7
IO
gpio0_3
0x9
IO
mcasp0_axr0
0x0
IO
ehrpwm0_tripzone_input
0x1
I
spi1_cs3
0x2
IO
spi1_d1
0x3
IO
mmc2_sdcd
0x4
I
pr0_pru0_gpo2
0x5
O
pr0_pru0_gpi2
0x6
I
gpio3_16
0x7
IO
mcasp0_axr1
0x0
IO
eQEP0_index
0x1
IO
mcasp1_axr0
0x3
IO
EMU3
0x4
IO
pr0_pru0_gpo6
0x5
O
pr0_pru0_gpi6
0x6
I
gpio3_20
0x7
IO
gpio0_2
0x9
IO
mcasp0_fsr
0x0
IO
eQEP0B_in
0x1
I
mcasp0_axr3
0x2
IO
mcasp1_fsx
0x3
IO
EMU2
0x4
IO
pr0_pru0_gpo5
0x5
O
pr0_pru0_gpi5
0x6
I
gpio3_19
0x7
IO
gpio0_19
0x9
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
N22
B17
A17
D16
48
PIN NAME [2]
mcasp0_fsx
mdio_clk
mdio_data
mii1_col
SIGNAL NAME [3]
MODE [4]
TYPE [5]
mcasp0_fsx
0x0
IO
ehrpwm0B
0x1
O
spi1_cs2
0x2
IO
spi1_d0
0x3
IO
mmc1_sdcd
0x4
I
pr0_pru0_gpo1
0x5
O
pr0_pru0_gpi1
0x6
I
gpio3_15
0x7
IO
mdio_clk
0x0
O
timer5
0x1
IO
uart5_txd
0x2
O
uart3_rtsn
0x3
O
mmc0_sdwp
0x4
I
mmc1_clk
0x5
IO
mmc2_clk
0x6
IO
gpio0_1
0x7
IO
pr1_mdio_mdclk
0x8
O
mdio_data
0x0
IO
timer6
0x1
IO
uart5_rxd
0x2
I
uart3_ctsn
0x3
IO
mmc0_sdcd
0x4
I
mmc1_cmd
0x5
IO
mmc2_cmd
0x6
IO
gpio0_0
0x7
IO
pr1_mdio_data
0x8
IO
gmii1_col
0x0
I
rmii2_refclk
0x1
IO
spi1_sclk
0x2
IO
uart5_rxd
0x3
I
mcasp1_axr2
0x4
IO
mmc2_dat3
0x5
IO
mcasp0_axr2
0x6
IO
gpio3_0
0x7
IO
gpio0_0
0x9
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV7
Yes
6
PU/PD
LVCMOS
PU
PU
Mode7
VDDSHV7
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B14
F17
B16
E16
PIN NAME [2]
mii1_crs
mii1_rxd0
mii1_rxd1
mii1_rxd2
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gmii1_crs
0x0
I
rmii1_crs_dv
0x1
I
spi1_d0
0x2
IO
I2C1_SDA
0x3
IOD
mcasp1_aclkx
0x4
IO
uart5_ctsn
0x5
I
uart2_rxd
0x6
IO
gpio3_1
0x7
IO
gmii1_rxd0
0x0
I
rmii1_rxd0
0x1
I
rgmii1_rd0
0x2
I
mcasp1_ahclkx
0x3
IO
mcasp1_ahclkr
0x4
IO
mcasp1_aclkr
0x5
IO
mcasp0_axr3
0x6
IO
gpio2_21
0x7
IO
gmii1_rxd1
0x0
I
rmii1_rxd1
0x1
I
rgmii1_rd1
0x2
I
mcasp1_axr3
0x3
IO
mcasp1_fsr
0x4
IO
eQEP0_strobe
0x5
IO
mmc2_clk
0x6
IO
gpio2_20
0x7
IO
gmii1_rxd2
0x0
I
uart3_txd
0x1
IO
rgmii1_rd2
0x2
I
mmc0_dat4
0x3
IO
mmc1_dat3
0x4
IO
uart1_rin
0x5
I
mcasp0_axr1
0x6
IO
gpio2_19
0x7
IO
gpio0_11
0x9
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
C14
D13
A15
B13
50
PIN NAME [2]
mii1_rxd3
mii1_rx_clk
mii1_rx_dv
mii1_rx_er
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gmii1_rxd3
0x0
I
uart3_rxd
0x1
IO
rgmii1_rd3
0x2
I
mmc0_dat5
0x3
IO
mmc1_dat2
0x4
IO
uart1_dtrn
0x5
O
mcasp0_axr0
0x6
IO
gpio2_18
0x7
IO
gpio0_10
0x9
IO
gmii1_rxclk
0x0
I
uart2_txd
0x1
IO
rgmii1_rclk
0x2
I
mmc0_dat6
0x3
IO
mmc1_dat1
0x4
IO
uart1_dsrn
0x5
I
mcasp0_fsx
0x6
IO
gpio3_10
0x7
IO
gpio0_9
0x9
IO
gmii1_rxdv
0x0
I
rgmii1_rctl
0x2
I
uart5_txd
0x3
O
mcasp1_aclkx
0x4
IO
mmc2_dat0
0x5
IO
mcasp0_aclkr
0x6
IO
gpio3_4
0x7
IO
gpio0_1
0x9
IO
gmii1_rxer
0x0
I
rmii1_rxer
0x1
I
spi1_d1
0x2
IO
I2C1_SCL
0x3
IOD
mcasp1_fsx
0x4
IO
uart5_rtsn
0x5
O
uart2_txd
0x6
IO
gpio3_2
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
B15
A14
C13
C16
PIN NAME [2]
mii1_txd0
mii1_txd1
mii1_txd2
mii1_txd3
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gmii1_txd0
0x0
O
rmii1_txd0
0x1
O
rgmii1_td0
0x2
O
mcasp1_axr2
0x3
IO
mcasp1_aclkr
0x4
IO
eQEP0B_in
0x5
I
mmc1_clk
0x6
IO
gpio0_28
0x7
IO
gmii1_txd1
0x0
O
rmii1_txd1
0x1
O
rgmii1_td1
0x2
O
mcasp1_fsr
0x3
IO
mcasp1_axr1
0x4
IO
eQEP0A_in
0x5
I
mmc1_cmd
0x6
IO
gpio0_21
0x7
IO
gmii1_txd2
0x0
O
dcan0_rx
0x1
I
rgmii1_td2
0x2
O
uart4_txd
0x3
O
mcasp1_axr0
0x4
IO
mmc2_dat2
0x5
IO
mcasp0_ahclkx
0x6
IO
gpio0_17
0x7
IO
gpio3_12
0x9
IO
gmii1_txd3
0x0
O
dcan0_tx
0x1
O
rgmii1_td3
0x2
O
uart4_rxd
0x3
I
mcasp1_fsx
0x4
IO
mmc2_dat1
0x5
IO
mcasp0_fsr
0x6
IO
gpio0_16
0x7
IO
gpio3_11
0x9
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
D14
A13
D1
D2
52
PIN NAME [2]
mii1_tx_clk
mii1_tx_en
mmc0_clk
mmc0_cmd
SIGNAL NAME [3]
MODE [4]
TYPE [5]
gmii1_txclk
0x0
I
uart2_rxd
0x1
IO
rgmii1_tclk
0x2
O
mmc0_dat7
0x3
IO
mmc1_dat0
0x4
IO
uart1_dcdn
0x5
I
mcasp0_aclkx
0x6
IO
gpio3_9
0x7
IO
gpio0_8
0x9
IO
gmii1_txen
0x0
O
rmii1_txen
0x1
O
rgmii1_tctl
0x2
O
timer4
0x3
IO
mcasp1_axr0
0x4
IO
eQEP0_index
0x5
IO
mmc2_cmd
0x6
IO
gpio3_3
0x7
IO
mmc0_clk
0x0
IO
gpmc_a24
0x1
O
uart3_ctsn
0x2
IO
uart2_rxd
0x3
IO
dcan1_tx
0x4
O
pr0_pru0_gpo12
0x5
O
pr0_pru0_gpi12
0x6
I
gpio2_30
0x7
IO
mmc0_cmd
0x0
IO
gpmc_a25
0x1
O
uart3_rtsn
0x2
O
uart2_txd
0x3
IO
dcan1_rx
0x4
I
pr0_pru0_gpo13
0x5
O
pr0_pru0_gpi13
0x6
I
gpio2_31
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV1
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV1
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Copyright © 2014–2016, Texas Instruments Incorporated
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
C1
C2
B2
B1
PIN NAME [2]
mmc0_dat0
mmc0_dat1
mmc0_dat2
mmc0_dat3
SIGNAL NAME [3]
MODE [4]
TYPE [5]
mmc0_dat0
0x0
IO
gpmc_a23
0x1
O
uart5_rtsn
0x2
O
uart3_txd
0x3
IO
uart1_rin
0x4
I
pr0_pru0_gpo11
0x5
O
pr0_pru0_gpi11
0x6
I
gpio2_29
0x7
IO
mmc0_dat1
0x0
IO
gpmc_a22
0x1
O
uart5_ctsn
0x2
I
uart3_rxd
0x3
IO
uart1_dtrn
0x4
O
pr0_pru0_gpo10
0x5
O
pr0_pru0_gpi10
0x6
I
gpio2_28
0x7
IO
mmc0_dat2
0x0
IO
gpmc_a21
0x1
O
uart4_rtsn
0x2
O
timer6
0x3
IO
uart1_dsrn
0x4
I
pr0_pru0_gpo9
0x5
O
pr0_pru0_gpi9
0x6
I
gpio2_27
0x7
IO
mmc0_dat3
0x0
IO
gpmc_a20
0x1
O
uart4_ctsn
0x2
I
timer5
0x3
IO
uart1_dcdn
0x4
I
pr0_pru0_gpo8
0x5
O
pr0_pru0_gpi8
0x6
I
gpio2_26
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
OFF
Mode7
VDDSHV1
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV1
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV1
Yes
6
PU/PD
LVCMOS
OFF
OFF
Mode7
VDDSHV1
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Y25
nTRST
nTRST
0x0
I
PD
PD
Mode0
VDDSHV3
Yes
NA
PU/PD
LVCMOS
Y23
PWRONRSTn
porz
0x0
I
Z
Z
Mode0
VDDSHV3 (13)
Yes
NA
NA
LVCMOS
Terminal Configuration and Functions
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www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
PIN NAME [2]
SIGNAL NAME [3]
MODE [4]
TYPE [5]
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
AA10, AA7,
AA9, AB10,
AB6, AB7,
AB9, AC10,
AC12, AC5,
AC6, AC7,
AC9, AD1,
AD10, AD11,
AD2, AD7,
AE11, AE12,
AE9, H19,
H21, W10,
Y10, Y6, Y7
Reserved
Reserved (7)
NA
NA
NA
NA
NA
NA
NA
NA
NA
NA
A16
rmii1_ref_clk
rmii1_refclk
0x0
IO
PD
PD
Mode7
VDDSHV8
Yes
6
PU/PD
LVCMOS
xdma_event_intr2
0x1
I
spi1_cs0
0x2
IO
uart5_txd
0x3
O
mcasp1_axr3
0x4
IO
mmc0_pow
0x5
O
mcasp1_ahclkx
0x6
IO
gpio0_29
0x7
IO
AE2
RTC_KALDO_ENn
RTC_KALDO_ENn
0x0
I
Z
Z
Mode0
VDDS_RTC
NA
NA
NA
Analog
AD6
RTC_PMIC_EN
RTC_PMIC_EN
0x0
O
PU
1
Mode0
VDDS_RTC
NA
6
NA
LVCMOS
AE6
RTC_PWRONRSTn
RTC_PORz
0x0
I
Z
Z
Mode0
VDDS_RTC
Yes
NA
NA
LVCMOS
AE3
RTC_WAKEUP
RTC_WAKEUP
0x0
I
PD
Z
Mode0
VDDS_RTC
Yes
NA
NA
LVCMOS
AE5
RTC_XTALIN
OSC1_IN
0x0
I
H
H
Mode0
VDDS_RTC
Yes
NA
PU (2)
LVCMOS
AE4
RTC_XTALOUT
OSC1_OUT
0x0
O
Z
Z (24)
Mode0
VDDS_RTC
NA
NA (14)
NA
LVCMOS
T20
spi0_cs0
spi0_cs0
0x0
IO
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
mmc2_sdwp
0x1
I
I2C1_SCL
0x2
IOD
ehrpwm0_synci
0x3
I
pr1_uart0_txd
0x4
O
pr0_uart0_txd
0x5
O
pr1_edio_data_out1
0x6
O
gpio0_5
0x7
IO
ehrpwm1B
0x8
O
54
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
R25
T22
T21
P23
PIN NAME [2]
spi0_cs1
spi0_d0
spi0_d1
spi0_sclk
SIGNAL NAME [3]
MODE [4]
TYPE [5]
spi0_cs1
0x0
IO
uart3_rxd
0x1
IO
eCAP1_in_PWM1_out
0x2
IO
mmc0_pow
0x3
O
xdma_event_intr2
0x4
I
mmc0_sdcd
0x5
I
EMU4
0x6
IO
gpio0_6
0x7
IO
ehrpwm2A
0x8
O
timer0
0x9
IO
spi0_d0
0x0
IO
uart2_txd
0x1
IO
I2C2_SCL
0x2
IOD
ehrpwm0B
0x3
O
pr1_uart0_rts_n
0x4
O
pr0_uart0_rts_n
0x5
O
EMU3
0x6
IO
gpio0_3
0x7
IO
spi0_d1
0x0
IO
mmc1_sdwp
0x1
I
I2C1_SDA
0x2
IOD
ehrpwm0_tripzone_input
0x3
I
pr1_uart0_rxd
0x4
I
pr0_uart0_rxd
0x5
I
pr1_edio_data_out0
0x6
O
gpio0_4
0x7
IO
ehrpwm1A
0x8
O
spi0_sclk
0x0
IO
uart2_rxd
0x1
IO
I2C2_SDA
0x2
IOD
ehrpwm0A
0x3
O
pr1_uart0_cts_n
0x4
I
pr0_uart0_cts_n
0x5
I
EMU2
0x6
IO
gpio0_2
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
T23
P22
P20
N20
N25
R24
P24
P25
PIN NAME [2]
spi2_cs0
spi2_d0
spi2_d1
spi2_sclk
spi4_cs0
spi4_d0
spi4_d1
spi4_sclk
SIGNAL NAME [3]
MODE [4]
TYPE [5]
spi2_cs0
0x0
IO
I2C1_SDA
0x1
IOD
ehrpwm2_tripzone_input
0x6
I
gpio3_25
0x7
IO
gpio0_23
0x9
IO
spi2_d0
0x0
IO
ehrpwm5_tripzone_input
0x6
I
gpio3_22
0x7
IO
gpio0_20
0x9
IO
spi2_d1
0x0
IO
ehrpwm1_tripzone_input
0x6
I
gpio3_23
0x7
IO
gpio0_21
0x9
IO
spi2_sclk
0x0
IO
I2C1_SCL
0x1
IOD
ehrpwm4_tripzone_input
0x6
I
gpio3_24
0x7
IO
gpio0_22
0x9
IO
spi4_cs0
0x0
IO
ehrpwm3_tripzone_input
0x6
I
gpio5_7
0x7
IO
spi4_d0
0x0
IO
ehrpwm3_synci
0x6
I
gpio5_5
0x7
IO
spi4_d1
0x0
IO
ehrpwm0_tripzone_input
0x6
I
gpio5_6
0x7
IO
spi4_sclk
0x0
IO
ehrpwm0_synci
0x6
I
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
gpio5_4
0x7
IO
AA25
TCK
TCK
0x0
I
PU
PU
Mode0
VDDSHV3
Yes
NA
PU/PD
LVCMOS
Y20
TDI
TDI
0x0
I
PU
PU
Mode0
VDDSHV3
Yes
NA
PU/PD
LVCMOS
AA24
TDO
TDO
0x0
O
PU
PU
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
Y24
TMS
TMS
0x0
I
PU
PU
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
56
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
L25
J25
K25
J24
PIN NAME [2]
uart0_ctsn
uart0_rtsn
uart0_rxd
uart0_txd
SIGNAL NAME [3]
MODE [4]
TYPE [5]
uart0_ctsn
0x0
I
uart4_rxd
0x1
I
dcan1_tx
0x2
O
I2C1_SDA
0x3
IOD
spi1_d0
0x4
IO
timer7
0x5
IO
pr1_edc_sync0_out
0x6
O
gpio1_8
0x7
IO
uart0_rtsn
0x0
O
uart4_txd
0x1
O
dcan1_rx
0x2
I
I2C1_SCL
0x3
IOD
spi1_d1
0x4
IO
spi1_cs0
0x5
IO
pr1_edc_sync1_out
0x6
O
gpio1_9
0x7
IO
uart0_rxd
0x0
I
spi1_cs0
0x1
IO
dcan0_tx
0x2
O
I2C2_SDA
0x3
IOD
eCAP2_in_PWM2_out
0x4
IO
pr0_pru1_gpo4
0x5
O
pr0_pru1_gpi4
0x6
I
gpio1_10
0x7
IO
uart0_txd
0x0
O
spi1_cs1
0x1
IO
dcan0_rx
0x2
I
I2C2_SCL
0x3
IOD
eCAP1_in_PWM1_out
0x4
IO
pr0_pru1_gpo5
0x5
O
pr0_pru1_gpi5
0x6
I
gpio1_11
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
K22
L22
K21
L21
H22
58
PIN NAME [2]
uart1_ctsn
uart1_rtsn
uart1_rxd
uart1_txd
uart3_ctsn
SIGNAL NAME [3]
MODE [4]
TYPE [5]
uart1_ctsn
0x0
IO
timer6
0x1
IO
dcan0_tx
0x2
O
I2C2_SDA
0x3
IOD
spi1_cs0
0x4
IO
pr1_uart0_cts_n
0x5
I
pr1_edc_latch0_in
0x6
I
gpio0_12
0x7
IO
uart1_rtsn
0x0
O
timer5
0x1
IO
dcan0_rx
0x2
I
I2C2_SCL
0x3
IOD
spi1_cs1
0x4
IO
pr1_uart0_rts_n
0x5
O
pr1_edc_latch1_in
0x6
I
gpio0_13
0x7
IO
uart1_rxd
0x0
IO
mmc1_sdwp
0x1
I
dcan1_tx
0x2
O
I2C1_SDA
0x3
IOD
pr1_uart0_rxd
0x5
I
pr1_pru0_gpi16
0x6
I
gpio0_14
0x7
IO
uart1_txd
0x0
IO
mmc2_sdwp
0x1
I
dcan1_rx
0x2
I
I2C1_SCL
0x3
IOD
pr1_uart0_txd
0x5
O
pr1_pru0_gpi16
0x6
I
gpio0_15
0x7
IO
uart3_ctsn
0x0
IO
spi4_cs1
0x2
IO
pr0_pru1_gpo18
0x4
O
pr0_pru1_gpi18
0x5
I
ehrpwm5A
0x6
O
gpio5_0
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
Copyright © 2014–2016, Texas Instruments Incorporated
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
K24
H25
H24
PIN NAME [2]
uart3_rtsn
uart3_rxd
uart3_txd
SIGNAL NAME [3]
MODE [4]
TYPE [5]
uart3_rtsn
0x0
O
hdq_sio
0x1
IOD
pr0_pru1_gpo19
0x4
O
pr0_pru1_gpi19
0x5
I
ehrpwm5B
0x6
O
gpio5_1
0x7
IO
uart3_rxd
0x0
IO
pr0_pru0_gpo18
0x4
O
pr0_pru0_gpi18
0x5
I
ehrpwm4A
0x6
O
gpio5_2
0x7
IO
uart3_txd
0x0
IO
pr0_pru0_gpo19
0x4
O
pr0_pru0_gpi19
0x5
I
ehrpwm4B
0x6
O
gpio5_3
0x7
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
OFF
PU
Mode7
VDDSHV3
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
W22
USB0_CE
USB0_CE
0x0
A
Z
Z
Mode0
VDDA3P3V_USB0/V
DDA1P8V_USB0
NA
NA
NA
Analog
W24
USB0_DM
USB0_DM
0x0
A
Z
Z
Mode0
VDDA3P3V_USB0/V
DDA1P8V_USB0
NA (15)
8 (15)
NA
Analog
W25
USB0_DP
USB0_DP
0x0
A
Z
Z
Mode0
VDDA3P3V_USB0/V
DDA1P8V_USB0
NA (15)
8 (15)
NA
Analog
G21
USB0_DRVVBUS
USB0_DRVVBUS
0x0
O
PD
PD
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
gpio0_18
0x7
IO
gpio5_27
0x9
IO
U24
USB0_ID
USB0_ID
0x0
A
Z
Z
Mode0
VDDA3P3V_USB0/V
DDA1P8V_USB0
NA
NA
NA
Analog
U23
USB0_VBUS
USB0_VBUS
0x0
A
Z
Z
Mode0
VDDA3P3V_USB0/V
DDA1P8V_USB0
NA
NA
NA
Analog
U22
USB1_CE
USB1_CE
0x0
A
Z
Z
Mode0
VDDA3P3V_USB1/V
DDA1P8V_USB1
NA
NA
NA
Analog
V25
USB1_DM
USB1_DM
0x0
A
Z
Z
Mode0
VDDA3P3V_USB1/V
DDA1P8V_USB1
NA (16)
8 (16)
NA
Analog
V24
USB1_DP
USB1_DP
0x0
A
Z
Z
Mode0
VDDA3P3V_USB1/V
DDA1P8V_USB1
NA (16)
8 (16)
NA
Analog
F25
USB1_DRVVBUS
USB1_DRVVBUS
0x0
O
PD
PD
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
gpio3_13
0x7
IO
gpio0_25
0x9
IO
USB1_ID
0x0
A
Z
Z
Mode0
VDDA3P3V_USB1/V
DDA1P8V_USB1
NA
NA
NA
Analog
U25
USB1_ID
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
www.ti.com
Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
PIN NAME [2]
SIGNAL NAME [3]
MODE [4]
TYPE [5]
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
T25
USB1_VBUS
USB1_VBUS
0x0
A
Z
Z
Mode0
VDDA3P3V_USB1/V
DDA1P8V_USB1
NA
NA
NA
Analog
W21
VDDA1P8V_USB0
VDDA1P8V_USB0
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
U21
VDDA1P8V_USB1
VDDA1P8V_USB1
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
W20
VDDA3P3V_USB0
VDDA3P3V_USB0
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
U20
VDDA3P3V_USB1
VDDA3P3V_USB1
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
AB12
VDDA_ADC0
VDDA_ADC0
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
Y16
VDDA_ADC1
VDDA_ADC1
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
AD12, AD8,
VDDS
F20, G6, H12,
P19, W15,
Y19
VDDS (1)
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
F8
VDDS3P3V_IOLDO
VDDS3P3V_IOLDO
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
J7, J8
VDDSHV1
VDDSHV1
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
V16, V17,
W16
VDDSHV2
VDDSHV2
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
J18, K17,
K18, N18,
N19, P18,
W18
VDDSHV3
VDDSHV3
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
F22
VDDSHV5
VDDSHV5
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
G16, G17,
H17
VDDSHV6
VDDSHV6
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
F16
VDDSHV7
VDDSHV7
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
G13, G14
VDDSHV8
VDDSHV8
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
G11, H11
VDDSHV9
VDDSHV9
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
G10, H10
VDDSHV10
VDDSHV10
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
H8, H9
VDDSHV11
VDDSHV11
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
E23
VDDS_CLKOUT
VDDS_CLKOUT
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
K7, K8, M7,
M8, N7, N8,
R6, R7, R8,
T7, T8, V7,
V8
VDDS_DDR
VDDS_DDR
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
C23
VDDS_OSC
VDDS_OSC
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
N21
VDDS_PLL_CORE_LCD
VDDS_PLL_CORE_LCD
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
G5
VDDS_PLL_DDR
VDDS_PLL_DDR
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
E17
VDDS_PLL_MPU
VDDS_PLL_MPU
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
AD5
VDDS_RTC
VDDS_RTC
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
F13
VDDS_SRAM_CORE_BG
VDDS_SRAM_CORE_BG
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
F14
VDDS_SRAM_MPU_BB
VDDS_SRAM_MPU_BB
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
60
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Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
PIN NAME [2]
SIGNAL NAME [3]
MODE [4]
TYPE [5]
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
AD9, J10,
VDD_CORE
J11, L12, L14,
M12, M14,
M9, N16, N17,
N9, P16, P17,
R11, R14, R9,
T11, T14,
T18, T19, T9,
U15, V15,
W12, W13
VDD_CORE (11)
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
H13, H14,
VDD_MPU
H16, J13, J14,
J16, K19,
K20, L19,
L20, M17,
M18
VDD_MPU
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
D20
vdd_mpu_mon
vdd_mpu_mon (25)
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
P21
VPP
VPP (18)
NA
POWER
NA
NA
NA
NA
NA
NA
NA
NA
A1, A25,
VSS
AA23, AE1,
AE10, AE25,
AE7, AE8,
H15, H18,
J12, J15, J17,
J9, K11, K12,
K14, K15, K9,
L11, L15, L17,
L18, L8, L9,
M10, M11,
M13, M15,
M16, N10,
N11, N12,
N13, N14,
N15, P10,
P11, P12,
P13, P14,
P15, P8, P9,
R12, R15,
R17, R18,
T12, T15,
T17, U10,
U11, U12,
U13, U14,
U16, U17,
U18, U19, U8,
U9, V10, V11,
V12, V13,
V14, V18, V9
VSS (12)
NA
GROUND
NA
NA
NA
NA
NA
NA
NA
NA
AC15
VSSA_ADC
VSSA_ADC
NA
GROUND
NA
NA
NA
NA
NA
NA
NA
NA
W23
VSSA_USB
VSSA_USB
NA
GROUND
NA
NA
NA
NA
NA
NA
NA
NA
B24
VSS_OSC
VSS_OSC (26)
NA
GROUND
NA
NA
NA
NA
NA
NA
NA
NA
AD4
VSS_RTC
VSS_RTC (27)
NA
GROUND
NA
NA
NA
NA
NA
NA
NA
NA
G22
WARMRSTn
nRESETIN_OUT
0x0
IOD (9)
OFF
PU (17)
Mode0
VDDSHV3
Yes
6
PU/PD
LVCMOS
Terminal Configuration and Functions
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Table 4-10. Pin Attributes (ZDN Package) (continued)
BALL
NUMBER [1]
D24
C24
PIN NAME [2]
xdma_event_intr0
xdma_event_intr1
SIGNAL NAME [3]
MODE [4]
TYPE [5]
xdma_event_intr0
0x0
I
ext_hw_trigger
0x1
I
timer4
0x2
IO
clkout1
0x3
O
spi1_cs1
0x4
IO
pr1_pru0_gpi16
0x5
I
EMU2
0x6
IO
gpio0_19
0x7
IO
pr1_mdio_data
0x8
IO
gpio5_28
0x9
IO
xdma_event_intr1
0x0
I
spi0_cs2
0x1
IO
tclkin
0x2
I
clkout2
0x3
O
timer7
0x4
IO
pr1_pru0_gpi16
0x5
I
EMU3
0x6
IO
gpio0_20
0x7
IO
pr1_mdio_mdclk
0x8
O
gpio5_29
0x9
IO
BALL
RESET
STATE [6]
BALL
BALL RESET
RESET
REL. MODE
REL.
[8]
STATE [7]
OFF
PD (8)
Mode7
VDDSHV5
Yes
6
PU/PD
LVCMOS
OFF
PD
Mode7
VDDSHV5
Yes
6
PU/PD
LVCMOS
POWER [9]
HYS [10]
BUFFER
STRENGTH
(mA) [11]
PULL
UP/DOWN
TYPE [12]
IO CELL [13]
C25
XTALIN
OSC0_IN
0x0 (3)
I
Z
Z
Mode0
VDDS_OSC
Yes
NA
PD
LVCMOS
B25
XTALOUT
OSC0_OUT
0x0
O
Z
Z
Mode0
VDDS_OSC
NA
NA (14)
NA
LVCMOS
(1) AD12 and AD8 are not connected to VDDS in the device, but they are required to be connected to 1.8-V VDDS on the board.
(2) An internal 10-kΩ pullup is turned on when the oscillator is disabled. The oscillator is disabled by default after power is applied.
(3) An internal 15-kΩ pulldown is turned on when the oscillator is disabled. The oscillator is enabled by default after power is applied.
(4) DSS_DATA[15:0] terminals are respectively SYSBOOT[15:0] inputs, latched on the rising edge of PWRONRSTn.
(5) DSS_HSYNC terminal is SYSBOOT[17] input, latched on the rising edge of PWRONRSTn.
(6) DSS_VSYNC terminal is SYSBOOT[16] input, latched on the rising edge of PWRONRSTn.
(7) Do not connect any signal, test point, or board trace to reserved signals.
(8) If sysboot[17] is low on the rising edge of PWRONRSTn, this terminal has an internal pulldown turned on after reset is released. If sysboot[17] is high on the rising edge or PWRONRSTn,
this terminal will initially be driven low after reset is released then it begins to toggle at the same frequency of the OSC0_IN terminal.
(9) See the External Warm Reset section of the Technical Reference Manual for more information related to the operation of this terminal.
(10) Reset Release Mode = 7 if sysboot[17] is low. Mode = 3 if sysboot[17] is high.
(11) Terminal AD9 is not connected to VDD_CORE in the device, but it is required to be connected to VDD_CORE on the board.
(12) Terminals AA23, AE10, AE7, AE8 are not connected to VSS in the device, but they are required to be connected to board ground.
62
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(13) The input voltage thresholds for this input are not a function of VDDSHV3. See the DC Electrical Characteristics section for details related to electrical parameters associated with this
input terminal.
(14) This output should only be used to source the recommended crystal circuit.
(15) This parameter only applies when this USB PHY terminal is operating in UART2 mode.
(16) This parameter only applies when this USB PHY terminal is operating in UART3 mode.
(17) This pin is configured as open-drain and, hence, is expected to have an external pullup resistor. However, there is also an internal PU resistor by default enabled after reset is
deasserted.
(18) This signal is valid only for High-Security (AM437xHS) devices. For more details, see the VPP Specification for One-Time Programmable (OTP) eFUSEs section. This signal is reserved
for AM437x devices and, thus, do not connect any signal, test point, or board trace to this signal for AM437x devices.
(19) This terminal is an analog input used to set the switching threshold of the DDR input buffers to (VDDS_DDR / 2).
(20) This terminal is an analog passive signal that connects to an external 49.9 Ω 1%, 20mW reference resistor which is used to calibrate the DDR input/output buffers.
(21) This terminal is analog input that may also be configured as an open-drain output.
(22) This terminal is analog input that may also be configured as an open-source or open-drain output.
(23) This terminal is analog input that may also be configured as an open-source output.
(24) This terminal is high-Z when the oscillator is disabled. This terminal is driven high if RTC_XTALIN is less than VIL, driven low if RTC_XTALIN is greater than VIH, and driven to a
unknown value if RTC_XTALIN is between VIL and VIH when the oscillator is enabled. The oscillator is disabled by default after power is applied.
(25) This terminal provides a Kelvin connection to VDD_MPU. It can be connected to the power supply feedback input to provide remote sensing which compensates for voltage drop in the
PCB power distribution network and package. When the Kelvin connection is not used it should be connected to the same power source as VDD_MPU.
(26) This terminal provides a Kelvin ground reference for the external crystal components. If a crystal circuit is connected to the OSC0_IN/OSC0_OUT terminals, the crystal circuit component
grounds should be connected to this terminal and also be connected to the PCB ground plane close to this terminal. If an external LVCMOS clock source is connected to the OSC0_IN
terminal, this terminal should be connected to VSS.
(27) This terminal provides a Kelvin ground reference for the external crystal components. If a crystal circuit is connected to the OSC1_IN/OSC1_OUT terminals, the crystal circuit component
grounds should be connected to this terminal and also should be connected to the PCB ground plane close to this terminal. If an external LVCMOS clock source is connected to the
OSC1_IN terminal, this terminal should be connected to VSS.
Terminal Configuration and Functions
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4.3
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Signal Descriptions
The device contains many peripheral interfaces. In order to reduce package size and lower overall system
cost while maintaining maximum functionality, many of the terminals can multiplex up to eight signal
functions. Although there are many combinations of pin multiplexing that are possible, only a certain
number of sets, called IO Sets, are valid due to timing limitations. These valid IO Sets were carefully
chosen to provide many possible application scenarios for the user.
TI has developed a Windows-based application called Pin Mux Utility that helps a system designer select
the appropriate pin-multiplexing configuration for their device-based product design. The Pin Mux Utility
provides a way to select valid IO Sets of specific peripheral interfaces to ensure the pin-multiplexing
configuration selected for a design only uses valid IO Sets supported by the device.
(1) SIGNAL NAME: The signal name
(2) DESCRIPTION: Description of the signal.
(3) TYPE: Ball type for this specific function:
– I = Input
– O = Output
– I/O = Input/Output
– D = Open drain
– DS = Differential
– A = Analog
(4) BALL: Package ball location.
4.3.1
ADC Interfaces
Table 4-11. ADC0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
ADC0_AIN0
Analog Input/Output
A
AA12
ADC0_AIN1
Analog Input/Output
A
Y12
ADC0_AIN2
Analog Input/Output
A
Y13
ADC0_AIN3
Analog Input/Output
A
AA13
ADC0_AIN4
Analog Input/Output
A
AB13
ADC0_AIN5
Analog Input/Output
A
AC13
ADC0_AIN6
Analog Input/Output
A
AD13
ADC0_AIN7
Analog Input/Output
A
AE13
ADC0_VREFN
Analog Negative Reference Input
AP
AE14
ADC0_VREFP
Analog Positive Reference Input
AP
AD14
Table 4-12. ADC0/1 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
ext_hw_trigger
External Hardware Trigger for ADC conversion
TYPE [3]
ZDN [4]
I
AC25, D24
TYPE [3]
ZDN [4]
Table 4-13. ADC1 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
ADC1_AIN0
Analog Input/Output
A
AC16
ADC1_AIN1
Analog Input/Output
A
AB16
ADC1_AIN2
Analog Input/Output
A
AA16
ADC1_AIN3
Analog Input/Output
A
AB15
ADC1_AIN4
Analog Input/Output
A
AA15
ADC1_AIN5
Analog Input/Output
A
Y15
ADC1_AIN6
Analog Input/Output
A
AE16
ADC1_AIN7
Analog Input/Output
A
AD16
ADC1_VREFN
Analog Negative Reference Input
AP
AD15
64
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Table 4-13. ADC1 Signal Descriptions (continued)
SIGNAL NAME [1]
ADC1_VREFP
DESCRIPTION [2]
Analog Positive Reference Input
TYPE [3]
ZDN [4]
AP
AE15
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CAN Interfaces
Table 4-14. DCAN0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
dcan0_rx
DCAN0 Receive Data
I
C13, J24, L22
dcan0_tx
DCAN0 Transmit Data
O
C16, K22, K25
Table 4-15. DCAN1 Signal Descriptions
TYPE [3]
ZDN [4]
dcan1_rx
SIGNAL NAME [1]
DCAN1 Receive Data
I
D2, J25, L21
dcan1_tx
DCAN1 Transmit Data
O
D1, K21, L25
66
DESCRIPTION [2]
Terminal Configuration and Functions
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4.3.3
SPRS851C – JUNE 2014 – REVISED APRIL 2016
Camera (VPFE) Interfaces
Table 4-16. Camera0 Input Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
cam0_data0
Camera data
I
AE18
cam0_data1
Camera data
I
AB18
cam0_data2
Camera data
I
Y18
cam0_data3
Camera data
I
AA18
cam0_data4
Camera data
I
AE19
cam0_data5
Camera data
I
AD19
cam0_data6
Camera data
I
AE20
cam0_data7
Camera data
I
AD20
cam0_data8
Camera data
I
AB19
cam0_data9
Camera data
I
AA19
cam0_data10
Camera data
I
AC18, AC25
cam0_data11
Camera data
I
AB25, AD17
cam0_field
CCD Data Field Indicator
IO
AC18
cam0_hd
CCD Data Horizontal Detect
IO
AE17
cam0_pclk
CCD Data Pixel Clock
cam0_vd
CCD Data Vertical Detect
cam0_wen
CCD Data Write Enable
I
AC20
IO
AD18
I
AD17
TYPE [3]
ZDN [4]
Table 4-17. Camera1 Input Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
cam1_data0
Camera data
I
AB20
cam1_data1
Camera data
I
AC21
cam1_data2
Camera data
I
AD21
cam1_data3
Camera data
I
AE22
cam1_data4
Camera data
I
AD22
cam1_data5
Camera data
I
AE23
cam1_data6
Camera data
I
AD23
cam1_data7
Camera data
I
AE24
cam1_data8
Camera data
I
AB18, AD24
cam1_data9
Camera data
I
AC24, AE18
cam1_data10
Camera data
I
AC18, AC25, Y18
cam1_data11
Camera data
I
AA18, AB25, AD17
cam1_field
CCD Data Field Indicator
IO
AC25
cam1_hd
CCD Data Horizontal Detect
IO
AD25
cam1_pclk
CCD Data Pixel Clock
cam1_vd
CCD Data Vertical Detect
cam1_wen
CCD Data Write Enable
I
AE21
IO
AC23
I
AB25, AE19
Terminal Configuration and Functions
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Debug Subsystem Interface
Table 4-18. Debug Subsystem Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
N23
EMU0
MISC EMULATION PIN
IO
EMU1
MISC EMULATION PIN
IO
T24
EMU2
MISC EMULATION PIN
IO
AE17, D24, K23, P23
EMU3
MISC EMULATION PIN
IO
AD18, C24, M25, T22
EMU4
MISC EMULATION PIN
IO
AC18, B12, L24, R25
EMU5
MISC EMULATION PIN
IO
AD17
EMU6
MISC EMULATION PIN
IO
AC20
EMU7
MISC EMULATION PIN
IO
AB19
EMU8
MISC EMULATION PIN
IO
AA19
EMU9
MISC EMULATION PIN
IO
AC24
EMU10
MISC EMULATION PIN
IO
AD24, AE17
EMU11
MISC EMULATION PIN
IO
AB25, AD18
nTRST
JTAG TEST RESET (ACTIVE LOW)
I
Y25
TCK
JTAG TEST CLOCK
I
AA25
TDI
JTAG TEST DATA INPUT
I
Y20
TDO
JTAG TEST DATA OUTPUT
O
AA24
TMS
JTAG TEST MODE SELECT
I
Y24
68
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4.3.5
SPRS851C – JUNE 2014 – REVISED APRIL 2016
Display Subsystem (DSS) Interface
Table 4-19. Display Subsystem (DSS) Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
dss_ac_bias_en
DSS data
O
A24
dss_data0
DSS data
IO
B22
dss_data1
DSS data
IO
A21
dss_data2
DSS data
IO
B21
dss_data3
DSS data
IO
C21
dss_data4
DSS data
IO
A20
dss_data5
DSS data
IO
B20
dss_data6
DSS data
IO
C20
dss_data7
DSS data
IO
E19
dss_data8
DSS data
IO
A19
dss_data9
DSS data
IO
B19
dss_data10
DSS data
IO
A18
dss_data11
DSS data
IO
B18
dss_data12
DSS data
IO
C19
dss_data13
DSS data
IO
D19
dss_data14
DSS data
IO
C17
dss_data15
DSS data
IO
D17
dss_data16
DSS data
O
A11, AC24
dss_data17
DSS data
O
AA19, B11
dss_data18
DSS data
O
AB19, C11
dss_data19
DSS data
O
AC20, E11
dss_data20
DSS data
O
AD17, D11
dss_data21
DSS data
O
AC18, F11
dss_data22
DSS data
O
A10, AD18
dss_data23
DSS data
O
AE17, B10
dss_hsync
DSS Horizontal Sync
O
A23
dss_pclk
DSS Pixel Clock
O
A22
dss_vsync
DSS Vertical Sync
O
B23
Terminal Configuration and Functions
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Ethernet (GEMAC_CPSW) Interfaces
Table 4-20. MDIO Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
mdio_clk
MDIO Clk
O
B17
mdio_data
MDIO Data
IO
A17
Table 4-21. MII1 Signal Descriptions
TYPE [3]
ZDN [4]
gmii1_col
SIGNAL NAME [1]
MII Colision
DESCRIPTION [2]
I
D16
gmii1_crs
MII Carrier Sense
I
B14
gmii1_rxclk
MII Receive Clock
I
D13
gmii1_rxd0
MII Receive Data bit 0
I
F17
gmii1_rxd1
MII Receive Data bit 1
I
B16
gmii1_rxd2
MII Receive Data bit 2
I
E16
gmii1_rxd3
MII Receive Data bit 3
I
C14
gmii1_rxdv
MII Receive Data Valid
I
A15
gmii1_rxer
MII Receive Data Error
I
B13
gmii1_txclk
MII Transmit Clock
I
D14
gmii1_txd0
MII Transmit Data bit 0
O
B15
gmii1_txd1
MII Transmit Data bit 1
O
A14
gmii1_txd2
MII Transmit Data bit 2
O
C13
gmii1_txd3
MII Transmit Data bit 3
O
C16
gmii1_txen
MII Transmit Enable
O
A13
Table 4-22. MII2 Signal Descriptions
TYPE [3]
ZDN [4]
gmii2_col
SIGNAL NAME [1]
MII Colision
DESCRIPTION [2]
I
A3
gmii2_crs
MII Carrier Sense
I
A2, B12, F10
gmii2_rxclk
MII Receive Clock
I
F6
gmii2_rxd0
MII Receive Data bit 0
I
D8
gmii2_rxd1
MII Receive Data bit 1
I
G8
gmii2_rxd2
MII Receive Data bit 2
I
B4
gmii2_rxd3
MII Receive Data bit 3
I
F7
gmii2_rxdv
MII Receive Data Valid
I
C5
gmii2_rxer
MII Receive Data Error
I
B3
gmii2_txclk
MII Transmit Clock
I
E8
gmii2_txd0
MII Transmit Data bit 0
O
E7
gmii2_txd1
MII Transmit Data bit 1
O
D7
gmii2_txd2
MII Transmit Data bit 2
O
A4
gmii2_txd3
MII Transmit Data bit 3
O
C6
gmii2_txen
MII Transmit Enable
O
C3
Table 4-23. RGMII1 Signal Descriptions
TYPE [3]
ZDN [4]
rgmii1_rclk
SIGNAL NAME [1]
RGMII Receive Clock
I
D13
rgmii1_rctl
RGMII Receive Control
I
A15
rgmii1_rd0
RGMII Receive Data bit 0
I
F17
70
DESCRIPTION [2]
Terminal Configuration and Functions
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Table 4-23. RGMII1 Signal Descriptions (continued)
TYPE [3]
ZDN [4]
rgmii1_rd1
SIGNAL NAME [1]
RGMII Receive Data bit 1
DESCRIPTION [2]
I
B16
rgmii1_rd2
RGMII Receive Data bit 2
I
E16
rgmii1_rd3
RGMII Receive Data bit 3
I
C14
rgmii1_tclk
RGMII Transmit Clock
O
D14
rgmii1_tctl
RGMII Transmit Control
O
A13
rgmii1_td0
RGMII Transmit Data bit 0
O
B15
rgmii1_td1
RGMII Transmit Data bit 1
O
A14
rgmii1_td2
RGMII Transmit Data bit 2
O
C13
rgmii1_td3
RGMII Transmit Data bit 3
O
C16
TYPE [3]
ZDN [4]
Table 4-24. RGMII2 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
rgmii2_rclk
RGMII Receive Clock
I
F6
rgmii2_rctl
RGMII Receive Control
I
C5
rgmii2_rd0
RGMII Receive Data bit 0
I
D8
rgmii2_rd1
RGMII Receive Data bit 1
I
G8
rgmii2_rd2
RGMII Receive Data bit 2
I
B4
rgmii2_rd3
RGMII Receive Data bit 3
I
F7
rgmii2_tclk
RGMII Transmit Clock
O
E8
rgmii2_tctl
RGMII Transmit Control
O
C3
rgmii2_td0
RGMII Transmit Data bit 0
O
E7
rgmii2_td1
RGMII Transmit Data bit 1
O
D7
rgmii2_td2
RGMII Transmit Data bit 2
O
A4
rgmii2_td3
RGMII Transmit Data bit 3
O
C6
TYPE [3]
ZDN [4]
I
B14
IO
A16
Table 4-25. RMII1 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
rmii1_crs_dv
RMII Carrier Sense / Data Valid
rmii1_refclk
RMII Reference Clock
rmii1_rxd0
RMII Receive Data bit 0
I
F17
rmii1_rxd1
RMII Receive Data bit 1
I
B16
rmii1_rxer
RMII Receive Data Error
I
B13
rmii1_txd0
RMII Transmit Data bit 0
O
B15
rmii1_txd1
RMII Transmit Data bit 1
O
A14
rmii1_txen
RMII Transmit Enable
O
A13
Table 4-26. RMII2 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
I
A2, B12, B4, F10
IO
D16
I
D8
RMII Receive Data bit 1
I
G8
RMII Receive Data Error
I
B3
rmii2_txd0
RMII Transmit Data bit 0
O
E7
rmii2_txd1
RMII Transmit Data bit 1
O
D7
rmii2_txen
RMII Transmit Enable
O
C3
rmii2_crs_dv
RMII Carrier Sense / Data Valid
rmii2_refclk
RMII Reference Clock
rmii2_rxd0
RMII Receive Data bit 0
rmii2_rxd1
rmii2_rxer
Terminal Configuration and Functions
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External Memory Interfaces
Table 4-27. DDR Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
ddr_a0
DDR SDRAM ROW/COLUMN ADDRESS
O
N1
ddr_a1
DDR SDRAM ROW/COLUMN ADDRESS
O
L1
ddr_a2
DDR SDRAM ROW/COLUMN ADDRESS
O
L2
ddr_a3
DDR SDRAM ROW/COLUMN ADDRESS
O
P2
ddr_a4
DDR SDRAM ROW/COLUMN ADDRESS
O
P1
ddr_a5
DDR SDRAM ROW/COLUMN ADDRESS
O
R5
ddr_a6
DDR SDRAM ROW/COLUMN ADDRESS
O
R4
ddr_a7
DDR SDRAM ROW/COLUMN ADDRESS
O
R3
ddr_a8
DDR SDRAM ROW/COLUMN ADDRESS
O
R2
ddr_a9
DDR SDRAM ROW/COLUMN ADDRESS
O
R1
ddr_a10
DDR SDRAM ROW/COLUMN ADDRESS
O
M6
ddr_a11
DDR SDRAM ROW/COLUMN ADDRESS
O
T5
ddr_a12
DDR SDRAM ROW/COLUMN ADDRESS
O
T4
ddr_a13
DDR SDRAM ROW/COLUMN ADDRESS
O
N5
ddr_a14
DDR SDRAM ROW/COLUMN ADDRESS
O
T3
ddr_a15
DDR SDRAM ROW/COLUMN ADDRESS
O
T2
ddr_ba0
DDR SDRAM BANK ADDRESS
O
K1
ddr_ba1
DDR SDRAM BANK ADDRESS
O
K2
ddr_ba2
DDR SDRAM BANK ADDRESS
O
K3
ddr_casn
DDR SDRAM COLUMN ADDRESS STROBE. (ACTIVE
LOW)
O
N3
ddr_ck
DDR SDRAM CLOCK (Differential+)
O
M2
ddr_cke0
DDR SDRAM CLOCK ENABLE
O
M3
ddr_cke1
DDR SDRAM CLOCK ENABLE1
O
N6
ddr_csn0
DDR SDRAM CHIP SELECT0
O
M5
ddr_csn1
DDR SDRAM CHIP SELECT1
O
M4
ddr_d0
DDR SDRAM DATA
IO
E3
ddr_d1
DDR SDRAM DATA
IO
E2
ddr_d2
DDR SDRAM DATA
IO
E1
ddr_d3
DDR SDRAM DATA
IO
F3
ddr_d4
DDR SDRAM DATA
IO
G4
ddr_d5
DDR SDRAM DATA
IO
G3
ddr_d6
DDR SDRAM DATA
IO
G2
ddr_d7
DDR SDRAM DATA
IO
G1
ddr_d8
DDR SDRAM DATA
IO
H1
ddr_d9
DDR SDRAM DATA
IO
J6
ddr_d10
DDR SDRAM DATA
IO
J5
ddr_d11
DDR SDRAM DATA
IO
J4
ddr_d12
DDR SDRAM DATA
IO
J3
ddr_d13
DDR SDRAM DATA
IO
K6
ddr_d14
DDR SDRAM DATA
IO
K5
ddr_d15
DDR SDRAM DATA
IO
K4
ddr_d16
DDR SDRAM DATA
IO
V5
ddr_d17
DDR SDRAM DATA
IO
V4
ddr_d18
DDR SDRAM DATA
IO
V3
ddr_d19
DDR SDRAM DATA
IO
V2
72
Terminal Configuration and Functions
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Table 4-27. DDR Signal Descriptions (continued)
TYPE [3]
ZDN [4]
ddr_d20
SIGNAL NAME [1]
DDR SDRAM DATA
DESCRIPTION [2]
IO
V1
ddr_d21
DDR SDRAM DATA
IO
W4
ddr_d22
DDR SDRAM DATA
IO
W5
ddr_d23
DDR SDRAM DATA
IO
W6
ddr_d24
DDR SDRAM DATA
IO
Y2
ddr_d25
DDR SDRAM DATA
IO
Y3
ddr_d26
DDR SDRAM DATA
IO
Y4
ddr_d27
DDR SDRAM DATA
IO
AA3
ddr_d28
DDR SDRAM DATA
IO
AB2
ddr_d29
DDR SDRAM DATA
IO
AB1
ddr_d30
DDR SDRAM DATA
IO
AC1
ddr_d31
DDR SDRAM DATA
IO
AC2
ddr_dqm0
DDR WRITE ENABLE / DATA MASK FOR DATA[7:0]
O
F4
ddr_dqm1
DDR WRITE ENABLE / DATA MASK FOR DATA[15:8]
O
H2
ddr_dqm2
DDR WRITE ENABLE / DATA MASK FOR DATA[23:16]
O
V6
ddr_dqm3
DDR WRITE ENABLE / DATA MASK FOR DATA[31:24]
O
Y1
ddr_dqs0
DDR DATA STROBE FOR DATA[7:0] (Differential+)
IO
F2
ddr_dqs1
DDR DATA STROBE FOR DATA[15:8] (Differential+)
IO
J2
ddr_dqs2
DDR DATA STROBE FOR DATA[23:16] (Differential+)
IO
W1
ddr_dqs3
DDR DATA STROBE FOR DATA[31:24] (Differential+)
IO
AA1
ddr_dqsn0
DDR DATA STROBE FOR DATA[7:0] (Differential-)
IO
F1
ddr_dqsn1
DDR DATA STROBE FOR DATA[15:8] (Differential-)
IO
J1
ddr_dqsn2
DDR DATA STROBE FOR DATA[23:16] (Differential-)
IO
W2
ddr_dqsn3
DDR DATA STROBE FOR DATA[31:24] (Differential-)
IO
AA2
ddr_nck
DDR SDRAM CLOCK (Differential-)
O
M1
ddr_odt0
DDR SDRAM ODT0
O
U1
ddr_odt1
DDR SDRAM ODT1
O
U2
ddr_rasn
DDR SDRAM ROW ADDRESS STROBE (ACTIVE LOW)
O
N2
ddr_resetn
DDR SDRAM RESET (only for DDR3)
O
T1
ddr_vref
Voltage Reference
ddr_vtp
External Resistor for Impedance Training
ddr_wen
DDR SDRAM WRITE ENABLE (ACTIVE LOW)
AP (1)
T6
I (2)
AC3
O
N4
(1) This terminal is an analog input used to set the switching threshold of the DDR input buffers to (VDDS_DDR / 2).
(2) This terminal is an analog passive signal that connects to an external 49.9 Ω 1%, 20mW reference resistor which is used to calibrate the
DDR input/output buffers.
Table 4-28. General Purpose Memory Controller (GPMC) Signal Descriptions
TYPE [3]
ZDN [4]
gpmc_a0
SIGNAL NAME [1]
GPMC Address
DESCRIPTION [2]
O
B22, C3
gpmc_a1
GPMC Address
O
A21, B23, C5
gpmc_a2
GPMC Address
O
A23, B21, C6
gpmc_a3
GPMC Address
O
A22, A4, C21
gpmc_a4
GPMC Address
O
A20, A24, D7
gpmc_a5
GPMC Address
O
B20, C10, E7
gpmc_a6
GPMC Address
O
C20, E8
gpmc_a7
GPMC Address
O
E19, F6
gpmc_a8
GPMC Address
O
B23, F7
Terminal Configuration and Functions
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Table 4-28. General Purpose Memory Controller (GPMC) Signal Descriptions (continued)
TYPE [3]
ZDN [4]
gpmc_a9
SIGNAL NAME [1]
GPMC Address
O
A23, B4
gpmc_a10
GPMC Address
O
A22, G8
gpmc_a11
GPMC Address
O
A24, D8
gpmc_a12
GPMC Address
O
A19
gpmc_a13
GPMC Address
O
B19
gpmc_a14
GPMC Address
O
A18
gpmc_a15
GPMC Address
O
B18
gpmc_a16
GPMC Address
O
C19, C3
gpmc_a17
GPMC Address
O
C5, D19
gpmc_a18
GPMC Address
O
C17, C6
gpmc_a19
GPMC Address
O
A4, D17
gpmc_a20
GPMC Address
O
B1, D7
gpmc_a21
GPMC Address
O
B2, E7
gpmc_a22
GPMC Address
O
C2, E8
gpmc_a23
GPMC Address
O
C1, F6
gpmc_a24
GPMC Address
O
D1, F7
gpmc_a25
GPMC Address
O
B4, D2
gpmc_a26
GPMC Address
O
G8
gpmc_a27
GPMC Address
O
D8
gpmc_ad0
GPMC Address and Data
IO
B5
gpmc_ad1
GPMC Address and Data
IO
A5
gpmc_ad2
GPMC Address and Data
IO
B6
gpmc_ad3
GPMC Address and Data
IO
A6
gpmc_ad4
GPMC Address and Data
IO
B7
gpmc_ad5
GPMC Address and Data
IO
A7
gpmc_ad6
GPMC Address and Data
IO
C8
gpmc_ad7
GPMC Address and Data
IO
B8
gpmc_ad8
GPMC Address and Data
IO
B10
gpmc_ad9
GPMC Address and Data
IO
A10
gpmc_ad10
GPMC Address and Data
IO
F11
gpmc_ad11
GPMC Address and Data
IO
D11
gpmc_ad12
GPMC Address and Data
IO
E11
gpmc_ad13
GPMC Address and Data
IO
C11
gpmc_ad14
GPMC Address and Data
IO
B11
gpmc_ad15
GPMC Address and Data
IO
A11
gpmc_advn_ale
GPMC Address Valid / Address Latch Enable
O
A9
gpmc_be0n_cle
GPMC Byte Enable 0 / Command Latch Enable
O
C10
gpmc_be1n
GPMC Byte Enable 1
O
A3, F10
gpmc_clk
GPMC Clock
IO
A12, B9
gpmc_csn0
GPMC Chip Select
O
A8
gpmc_csn1
GPMC Chip Select
O
B9
gpmc_csn2
GPMC Chip Select
O
F10
gpmc_csn3
GPMC Chip Select
O
B12
gpmc_csn4
GPMC Chip Select
O
A2
gpmc_csn5
GPMC Chip Select
O
B3
gpmc_csn6
GPMC Chip Select
O
A3
gpmc_dir
GPMC Data Direction
O
A3
74
DESCRIPTION [2]
Terminal Configuration and Functions
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Table 4-28. General Purpose Memory Controller (GPMC) Signal Descriptions (continued)
TYPE [3]
ZDN [4]
gpmc_oen_ren
SIGNAL NAME [1]
GPMC Output / Read Enable
DESCRIPTION [2]
O
E10
gpmc_wait0
GPMC Wait 0
I
A2, B12
gpmc_wait1
GPMC Wait 1
I
A12
gpmc_wen
GPMC Write Enable
O
D10
gpmc_wpn
GPMC Write Protect
O
B3
Terminal Configuration and Functions
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General Purpose IOs
Table 4-29. GPIO0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
A17, D16
gpio0_0
GPIO
IO
gpio0_1
GPIO
IO
A15, B17
gpio0_2
GPIO
IO
M25, P23
gpio0_3
GPIO
IO
L24, T22
gpio0_4
GPIO
IO
A12, T21
gpio0_5
GPIO
IO
T20
gpio0_6
GPIO
IO
R25
gpio0_7
GPIO
IO
G24
gpio0_8
GPIO
IO
C19, D14
gpio0_9
GPIO
IO
D13, D19
gpio0_10
GPIO
IO
C14, C17
gpio0_11
GPIO
IO
D17, E16
gpio0_12
GPIO
IO
K22
gpio0_13
GPIO
IO
L22
gpio0_14
GPIO
IO
K21
gpio0_15
GPIO
IO
L21
gpio0_16
GPIO
IO
C16
gpio0_17
GPIO
IO
C13
gpio0_18
GPIO
IO
G21, L23
gpio0_19
GPIO
IO
D24, K23
gpio0_20
GPIO
IO
C24, P22
gpio0_21
GPIO
IO
A14, P20
gpio0_22
GPIO
IO
B10, N20
gpio0_23
GPIO
IO
A10, T23
gpio0_24
GPIO
IO
H20
gpio0_25
GPIO
IO
F25
gpio0_26
GPIO
IO
F11
gpio0_27
GPIO
IO
D11
gpio0_28
GPIO
IO
B15
gpio0_29
GPIO
IO
A16
gpio0_30
GPIO
IO
A2
gpio0_31
GPIO
IO
B3
Table 4-30. GPIO1 Signal Descriptions
TYPE [3]
ZDN [4]
gpio1_0
SIGNAL NAME [1]
GPIO
IO
B5
gpio1_1
GPIO
IO
A5
gpio1_2
GPIO
IO
B6
gpio1_3
GPIO
IO
A6
gpio1_4
GPIO
IO
B7
gpio1_5
GPIO
IO
A7
gpio1_6
GPIO
IO
C8
gpio1_7
GPIO
IO
B8
gpio1_8
GPIO
IO
L25
gpio1_9
GPIO
IO
J25
76
DESCRIPTION [2]
Terminal Configuration and Functions
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 4-30. GPIO1 Signal Descriptions (continued)
TYPE [3]
ZDN [4]
gpio1_10
SIGNAL NAME [1]
GPIO
DESCRIPTION [2]
IO
K25
gpio1_11
GPIO
IO
J24
gpio1_12
GPIO
IO
E11
gpio1_13
GPIO
IO
C11
gpio1_14
GPIO
IO
B11
gpio1_15
GPIO
IO
A11
gpio1_16
GPIO
IO
C3
gpio1_17
GPIO
IO
C5
gpio1_18
GPIO
IO
C6
gpio1_19
GPIO
IO
A4
gpio1_20
GPIO
IO
D7
gpio1_21
GPIO
IO
E7
gpio1_22
GPIO
IO
E8
gpio1_23
GPIO
IO
F6
gpio1_24
GPIO
IO
F7
gpio1_25
GPIO
IO
B4
gpio1_26
GPIO
IO
G8
gpio1_27
GPIO
IO
D8
gpio1_28
GPIO
IO
A3
gpio1_29
GPIO
IO
A8
gpio1_30
GPIO
IO
B9
gpio1_31
GPIO
IO
F10
Table 4-31. GPIO2 Signal Descriptions
TYPE [3]
ZDN [4]
gpio2_0
SIGNAL NAME [1]
GPIO
DESCRIPTION [2]
IO
B12
gpio2_1
GPIO
IO
A12
gpio2_2
GPIO
IO
A9
gpio2_3
GPIO
IO
E10
gpio2_4
GPIO
IO
D10
gpio2_5
GPIO
IO
C10
gpio2_6
GPIO
IO
B22
gpio2_7
GPIO
IO
A21
gpio2_8
GPIO
IO
B21
gpio2_9
GPIO
IO
C21
gpio2_10
GPIO
IO
A20
gpio2_11
GPIO
IO
B20
gpio2_12
GPIO
IO
C20
gpio2_13
GPIO
IO
E19
gpio2_14
GPIO
IO
A19
gpio2_15
GPIO
IO
B19
gpio2_16
GPIO
IO
A18
gpio2_17
GPIO
IO
B18
gpio2_18
GPIO
IO
C14
gpio2_19
GPIO
IO
E16
gpio2_20
GPIO
IO
B16
gpio2_21
GPIO
IO
F17
Terminal Configuration and Functions
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Table 4-31. GPIO2 Signal Descriptions (continued)
TYPE [3]
ZDN [4]
gpio2_22
SIGNAL NAME [1]
GPIO
DESCRIPTION [2]
IO
B23
gpio2_23
GPIO
IO
A23
gpio2_24
GPIO
IO
A22
gpio2_25
GPIO
IO
A24
gpio2_26
GPIO
IO
B1
gpio2_27
GPIO
IO
B2
gpio2_28
GPIO
IO
C2
gpio2_29
GPIO
IO
C1
gpio2_30
GPIO
IO
D1
gpio2_31
GPIO
IO
D2
Table 4-32. GPIO3 Signal Descriptions
TYPE [3]
ZDN [4]
gpio3_0
SIGNAL NAME [1]
GPIO
DESCRIPTION [2]
IO
D16
gpio3_1
GPIO
IO
B14
gpio3_2
GPIO
IO
B13
gpio3_3
GPIO
IO
A13
gpio3_4
GPIO
IO
A15
gpio3_5
GPIO
IO
AB24
gpio3_6
GPIO
IO
Y22
gpio3_7
GPIO
IO
N23
gpio3_8
GPIO
IO
T24
gpio3_9
GPIO
IO
D14
gpio3_10
GPIO
IO
D13
gpio3_11
GPIO
IO
C16
gpio3_12
GPIO
IO
C13
gpio3_13
GPIO
IO
F25
gpio3_14
GPIO
IO
N24
gpio3_15
GPIO
IO
N22
gpio3_16
GPIO
IO
H23
gpio3_17
GPIO
IO
M24
gpio3_18
GPIO
IO
L23
gpio3_19
GPIO
IO
K23
gpio3_20
GPIO
IO
M25
gpio3_21
GPIO
IO
L24
gpio3_22
GPIO
IO
P22
gpio3_23
GPIO
IO
P20
gpio3_24
GPIO
IO
N20
gpio3_25
GPIO
IO
T23
TYPE [3]
ZDN [4]
Table 4-33. GPIO4 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
gpio4_0
GPIO
IO
AE17
gpio4_1
GPIO
IO
AD18
gpio4_2
GPIO
IO
AC18
gpio4_3
GPIO
IO
AD17
gpio4_4
GPIO
IO
AC20
78
Terminal Configuration and Functions
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Table 4-33. GPIO4 Signal Descriptions (continued)
TYPE [3]
ZDN [4]
gpio4_5
SIGNAL NAME [1]
GPIO
DESCRIPTION [2]
IO
AB19
gpio4_6
GPIO
IO
AA19
gpio4_7
GPIO
IO
AC24
gpio4_8
GPIO
IO
AD24
gpio4_9
GPIO
IO
AD25
gpio4_10
GPIO
IO
AC23
gpio4_11
GPIO
IO
AE21
gpio4_12
GPIO
IO
AC25
gpio4_13
GPIO
IO
AB25
gpio4_14
GPIO
IO
AB20
gpio4_15
GPIO
IO
AC21
gpio4_16
GPIO
IO
AD21
gpio4_17
GPIO
IO
AE22
gpio4_18
GPIO
IO
AD22
gpio4_19
GPIO
IO
AE23
gpio4_20
GPIO
IO
AD23
gpio4_21
GPIO
IO
AE24
gpio4_24
GPIO
IO
Y18
gpio4_25
GPIO
IO
AA18
gpio4_26
GPIO
IO
AE19
gpio4_27
GPIO
IO
AD19
gpio4_28
GPIO
IO
AE20
gpio4_29
GPIO
IO
AD20
Table 4-34. GPIO5 Signal Descriptions
TYPE [3]
ZDN [4]
gpio5_0
SIGNAL NAME [1]
GPIO
DESCRIPTION [2]
IO
H22
gpio5_1
GPIO
IO
K24
gpio5_2
GPIO
IO
H25
gpio5_3
GPIO
IO
H24
gpio5_4
GPIO
IO
P25
gpio5_5
GPIO
IO
R24
gpio5_6
GPIO
IO
P24
gpio5_7
GPIO
IO
N25
gpio5_8
GPIO
IO
D25
gpio5_9
GPIO
IO
F24
gpio5_10
GPIO
IO
G20
gpio5_11
GPIO
IO
F23
gpio5_12
GPIO
IO
E25
gpio5_13
GPIO
IO
E24
gpio5_19
GPIO
IO
AE18
gpio5_20
GPIO
IO
AB18
gpio5_23
GPIO
IO
D11
gpio5_24
GPIO
IO
F11
gpio5_25
GPIO
IO
A10
gpio5_26
GPIO
IO
B10
gpio5_27
GPIO
IO
G21
Terminal Configuration and Functions
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Table 4-34. GPIO5 Signal Descriptions (continued)
TYPE [3]
ZDN [4]
gpio5_28
SIGNAL NAME [1]
GPIO
IO
D24
gpio5_29
GPIO
IO
C24
gpio5_30
GPIO
IO
A2
gpio5_31
GPIO
IO
B3
80
DESCRIPTION [2]
Terminal Configuration and Functions
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4.3.9
SPRS851C – JUNE 2014 – REVISED APRIL 2016
HDQ Interface
Table 4-35. HDQ Signal Description
SIGNAL NAME [1]
hdq_sio
DESCRIPTION [2]
HDQ 1W Data IO
TYPE [3]
ZDN [4]
IOD
K24
Terminal Configuration and Functions
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4.3.10 I2C Interfaces
Table 4-36. I2C0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
I2C0_SCL
I2C0 Clock
IOD
Y22
I2C0_SDA
I2C0 Data
IOD
AB24
Table 4-37. I2C1 Signal Descriptions
TYPE [3]
ZDN [4]
I2C1_SCL
SIGNAL NAME [1]
I2C1 Clock
DESCRIPTION [2]
IOD
AB18, B13, G20, J25,
L21, N20, T20
I2C1_SDA
I2C1 Data
IOD
AE18, B14, E25, K21,
L25, T21, T23
Table 4-38. I2C2 Signal Descriptions
TYPE [3]
ZDN [4]
I2C2_SCL
SIGNAL NAME [1]
I2C2 Clock
IOD
AB19, AC21, J24,
L22, T22
I2C2_SDA
I2C2 Data
IOD
AB20, AC20, K22,
K25, P23
82
DESCRIPTION [2]
Terminal Configuration and Functions
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4.3.11 McASP Interfaces
Table 4-39. McASP0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
mcasp0_aclkr
McASP0 Receive Bit Clock
IO
A15, A3, C19, L23
mcasp0_aclkx
McASP0 Transmit Bit Clock
IO
A19, D14, E11, F7,
N24
mcasp0_ahclkr
McASP0 Receive Master Clock
IO
B18, M24
mcasp0_ahclkx
McASP0 Transmit Master Clock
IO
C13, D17, L24
mcasp0_axr0
McASP0 Serial Data (IN/OUT)
IO
A18, B11, C14, G8,
H23
mcasp0_axr1
McASP0 Serial Data (IN/OUT)
IO
A11, C17, D8, E16,
M25
mcasp0_axr2
McASP0 Serial Data (IN/OUT)
IO
B18, C19, D16, L23,
M24
mcasp0_axr3
McASP0 Serial Data (IN/OUT)
IO
D17, D19, F17, K23,
L24
mcasp0_fsr
McASP0 Receive Frame Sync
IO
A12, C16, D19, K23
mcasp0_fsx
McASP0 Transmit Frame Sync
IO
B19, B4, C11, D13,
N22
Table 4-40. McASP1 Signal Descriptions
TYPE [3]
ZDN [4]
mcasp1_aclkr
SIGNAL NAME [1]
McASP1 Receive Bit Clock
DESCRIPTION [2]
IO
B15, F17
mcasp1_aclkx
McASP1 Transmit Bit Clock
IO
A15, B14, L23
mcasp1_ahclkr
McASP1 Receive Master Clock
IO
F17
mcasp1_ahclkx
McASP1 Transmit Master Clock
IO
A16, F17
mcasp1_axr0
McASP1 Serial Data (IN/OUT)
IO
A13, C13, M25
mcasp1_axr1
McASP1 Serial Data (IN/OUT)
IO
A14, L24
mcasp1_axr2
McASP1 Serial Data (IN/OUT)
IO
B15, D16
mcasp1_axr3
McASP1 Serial Data (IN/OUT)
IO
A16, B16
mcasp1_fsr
McASP1 Receive Frame Sync
IO
A14, B16
mcasp1_fsx
McASP1 Transmit Frame Sync
IO
B13, C16, K23
Terminal Configuration and Functions
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4.3.12 Miscellaneous
Table 4-41. Miscellaneous Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
clkout1
Clock out1
O
D24
clkout2
Clock out2
O
C24
clkreq
Clock Request Control
O
H20
nNMI
External Interrupt to ARM Cortex A9 core
I
G25
nRESETIN_OUT
Warm Reset Input/Output
IOD (1)
G22
OSC0_IN
High frequency oscillator input
I
C25
OSC0_OUT
High frequency oscillator output
O
B25
OSC1_IN
Low frequency (32.768 KHz) Real Time Clock oscillator
input
I
AE5
OSC1_OUT
Low frequency (32.768 KHz) Real Time Clock oscillator
output
O
AE4
porz
Power on Reset
I
Y23
RTC_PORz
RTC active low reset input
I
AE6
tclkin
Timer Clock In
I
C24
xdma_event_intr0
External DMA Event or Interrupt 0
I
D24
xdma_event_intr1
External DMA Event or Interrupt 1
I
C24
xdma_event_intr2
External DMA Event or Interrupt 2
I
A16, G24, R25
xdma_event_intr3
External DMA Event or Interrupt 3
I
AD24
xdma_event_intr4
External DMA Event or Interrupt 4
I
AD25
xdma_event_intr5
External DMA Event or Interrupt 5
I
AC23
xdma_event_intr6
External DMA Event or Interrupt 6
I
AE21
xdma_event_intr7
External DMA Event or Interrupt 7
I
AC25
xdma_event_intr8
External DMA Event or Interrupt 8
I
AB25
(1) Refer to the External Warm Reset section of the Technical Reference Manual for more information related to the operation of this
terminal.
Table 4-42. Reserved Signals
SIGNAL NAME [1]
DESCRIPTION [2]
Reserved
84
Terminal Configuration and Functions
TYPE [3]
ZDN [4]
NA
AA10, AA7, AA9,
AB10, AB6, AB7,
AB9, AC10, AC12,
AC5, AC6, AC7, AC9,
AD1, AD10, AD11,
AD2, AD7, AE11,
AE12, AE9, H19,
H21, W10, Y10, Y6,
Y7
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4.3.13 PRU-ICSS0 Interface
Table 4-43. PRU-ICSS0-PRU0/General Purpose Inputs Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
pr0_pru0_gpi0
PRU-ICSS0 PRU0 Data In
I
N24
pr0_pru0_gpi1
PRU-ICSS0 PRU0 Data In
I
N22
pr0_pru0_gpi2
PRU-ICSS0 PRU0 Data In
I
H23
pr0_pru0_gpi3
PRU-ICSS0 PRU0 Data In
I
M24
pr0_pru0_gpi4
PRU-ICSS0 PRU0 Data In
I
L23
pr0_pru0_gpi5
PRU-ICSS0 PRU0 Data In
I
K23
pr0_pru0_gpi6
PRU-ICSS0 PRU0 Data In
I
M25
pr0_pru0_gpi7
PRU-ICSS0 PRU0 Data In
I
L24
pr0_pru0_gpi8
PRU-ICSS0 PRU0 Data In
I
B1
pr0_pru0_gpi9
PRU-ICSS0 PRU0 Data In
I
B2
pr0_pru0_gpi10
PRU-ICSS0 PRU0 Data In
I
C2
pr0_pru0_gpi11
PRU-ICSS0 PRU0 Data In
I
C1
pr0_pru0_gpi12
PRU-ICSS0 PRU0 Data In
I
D1
pr0_pru0_gpi13
PRU-ICSS0 PRU0 Data In
I
D2
pr0_pru0_gpi14
PRU-ICSS0 PRU0 Data In
I
AC20
pr0_pru0_gpi15
PRU-ICSS0 PRU0 Data In
I
AB19
pr0_pru0_gpi16
PRU-ICSS0 PRU0 Data In Capture Enable
I
AA19
pr0_pru0_gpi17
PRU-ICSS0 PRU0 Data In
I
AC24
pr0_pru0_gpi18
PRU-ICSS0 PRU0 Data In
I
H25
pr0_pru0_gpi19
PRU-ICSS0 PRU0 Data In
I
H24
Table 4-44. PRU-ICSS0-PRU0/General Purpose Outputs Signal Descriptions
TYPE [3]
ZDN [4]
pr0_pru0_gpo0
SIGNAL NAME [1]
PRU-ICSS0 PRU0 Data Out
DESCRIPTION [2]
O
N24
pr0_pru0_gpo1
PRU-ICSS0 PRU0 Data Out
O
N22
pr0_pru0_gpo2
PRU-ICSS0 PRU0 Data Out
O
H23
pr0_pru0_gpo3
PRU-ICSS0 PRU0 Data Out
O
M24
pr0_pru0_gpo4
PRU-ICSS0 PRU0 Data Out
O
L23
pr0_pru0_gpo5
PRU-ICSS0 PRU0 Data Out
O
K23
pr0_pru0_gpo6
PRU-ICSS0 PRU0 Data Out
O
M25
pr0_pru0_gpo7
PRU-ICSS0 PRU0 Data Out
O
L24
pr0_pru0_gpo8
PRU-ICSS0 PRU0 Data Out
O
B1
pr0_pru0_gpo9
PRU-ICSS0 PRU0 Data Out
O
B2
pr0_pru0_gpo10
PRU-ICSS0 PRU0 Data Out
O
C2
pr0_pru0_gpo11
PRU-ICSS0 PRU0 Data Out
O
C1
pr0_pru0_gpo12
PRU-ICSS0 PRU0 Data Out
O
D1
pr0_pru0_gpo13
PRU-ICSS0 PRU0 Data Out
O
D2
pr0_pru0_gpo14
PRU-ICSS0 PRU0 Data Out
O
AC20
pr0_pru0_gpo15
PRU-ICSS0 PRU0 Data Out
O
AB19
pr0_pru0_gpo16
PRU-ICSS0 PRU0 Data Out
O
AA19
pr0_pru0_gpo17
PRU-ICSS0 PRU0 Data Out
O
AC24
pr0_pru0_gpo18
PRU-ICSS0 PRU0 Data Out
O
H25
pr0_pru0_gpo19
PRU-ICSS0 PRU0 Data Out
O
H24
Terminal Configuration and Functions
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Table 4-45. PRU-ICSS0-PRU1/General Purpose Inputs Signal Descriptions
TYPE [3]
ZDN [4]
pr0_pru1_gpi0
SIGNAL NAME [1]
PRU-ICSS0 PRU1 Data In
DESCRIPTION [2]
I
AD24
pr0_pru1_gpi1
PRU-ICSS0 PRU1 Data In
I
AD25
pr0_pru1_gpi2
PRU-ICSS0 PRU1 Data In
I
AC23
pr0_pru1_gpi3
PRU-ICSS0 PRU1 Data In
I
AE21
pr0_pru1_gpi4
PRU-ICSS0 PRU1 Data In
I
K25
pr0_pru1_gpi5
PRU-ICSS0 PRU1 Data In
I
J24
pr0_pru1_gpi6
PRU-ICSS0 PRU1 Data In
I
B23
pr0_pru1_gpi7
PRU-ICSS0 PRU1 Data In
I
A23
pr0_pru1_gpi8
PRU-ICSS0 PRU1 Data In
I
A22
pr0_pru1_gpi9
PRU-ICSS0 PRU1 Data In
I
A24
pr0_pru1_gpi10
PRU-ICSS0 PRU1 Data In
I
AD21
pr0_pru1_gpi11
PRU-ICSS0 PRU1 Data In
I
AE22
pr0_pru1_gpi12
PRU-ICSS0 PRU1 Data In
I
AD22
pr0_pru1_gpi13
PRU-ICSS0 PRU1 Data In
I
AE23
pr0_pru1_gpi14
PRU-ICSS0 PRU1 Data In
I
AD23
pr0_pru1_gpi15
PRU-ICSS0 PRU1 Data In
I
AE24
pr0_pru1_gpi16
PRU-ICSS0 PRU1 Data In Capture Enable
I
AE18
pr0_pru1_gpi17
PRU-ICSS0 PRU1 Data In
I
AB18
pr0_pru1_gpi18
PRU-ICSS0 PRU1 Data In
I
H22
pr0_pru1_gpi19
PRU-ICSS0 PRU1 Data In
I
K24
Table 4-46. PRU-ICSS0-PRU1/General Purpose Outputs Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
pr0_pru1_gpo0
PRU-ICSS0 PRU1 Data Out
O
AD24
pr0_pru1_gpo1
PRU-ICSS0 PRU1 Data Out
O
AD25
pr0_pru1_gpo2
PRU-ICSS0 PRU1 Data Out
O
AC23
pr0_pru1_gpo3
PRU-ICSS0 PRU1 Data Out
O
AE21
pr0_pru1_gpo4
PRU-ICSS0 PRU1 Data Out
O
K25
pr0_pru1_gpo5
PRU-ICSS0 PRU1 Data Out
O
J24
pr0_pru1_gpo6
PRU-ICSS0 PRU1 Data Out
O
B23
pr0_pru1_gpo7
PRU-ICSS0 PRU1 Data Out
O
A23
pr0_pru1_gpo8
PRU-ICSS0 PRU1 Data Out
O
A22
pr0_pru1_gpo9
PRU-ICSS0 PRU1 Data Out
O
A24
pr0_pru1_gpo10
PRU-ICSS0 PRU1 Data Out
O
AD21
pr0_pru1_gpo11
PRU-ICSS0 PRU1 Data Out
O
AE22
pr0_pru1_gpo12
PRU-ICSS0 PRU1 Data Out
O
AD22
pr0_pru1_gpo13
PRU-ICSS0 PRU1 Data Out
O
AE23
pr0_pru1_gpo14
PRU-ICSS0 PRU1 Data Out
O
AD23
pr0_pru1_gpo15
PRU-ICSS0 PRU1 Data Out
O
AE24
pr0_pru1_gpo16
PRU-ICSS0 PRU1 Data Out
O
AE18
pr0_pru1_gpo17
PRU-ICSS0 PRU1 Data Out
O
AB18
pr0_pru1_gpo18
PRU-ICSS0 PRU1 Data Out
O
H22
pr0_pru1_gpo19
PRU-ICSS0 PRU1 Data Out
O
K24
86
Terminal Configuration and Functions
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Table 4-47. PRU-ICSS0/UART0 Signal Descriptions
TYPE [3]
ZDN [4]
pr0_uart0_cts_n
SIGNAL NAME [1]
UART Clear to Send
DESCRIPTION [2]
I
P23
pr0_uart0_rts_n
UART Request to Send
O
T22
pr0_uart0_rxd
UART Receive Data
I
T21
pr0_uart0_txd
UART Transmit Data
O
T20
Terminal Configuration and Functions
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4.3.14 PRU-ICSS1 Interface
Table 4-48. PRU-ICSS1-PRU0/General Purpose Inputs Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
pr1_pru0_gpi0
PRU-ICSS1 PRU0 Data In
I
B22
pr1_pru0_gpi1
PRU-ICSS1 PRU0 Data In
I
A21
pr1_pru0_gpi2
PRU-ICSS1 PRU0 Data In
I
B21
pr1_pru0_gpi3
PRU-ICSS1 PRU0 Data In
I
C21
pr1_pru0_gpi4
PRU-ICSS1 PRU0 Data In
I
A20
pr1_pru0_gpi5
PRU-ICSS1 PRU0 Data In
I
B20
pr1_pru0_gpi6
PRU-ICSS1 PRU0 Data In
I
C20
pr1_pru0_gpi7
PRU-ICSS1 PRU0 Data In
I
E19
pr1_pru0_gpi8
PRU-ICSS1 PRU0 Data In
I
B9
pr1_pru0_gpi9
PRU-ICSS1 PRU0 Data In
I
F10
pr1_pru0_gpi10
PRU-ICSS1 PRU0 Data In
I
E11
pr1_pru0_gpi11
PRU-ICSS1 PRU0 Data In
I
C11
pr1_pru0_gpi16
PRU-ICSS1 PRU0 Data In Capture Enable
I
B11, C24, D24, K21,
L21
Table 4-49. PRU-ICSS1-PRU0/General Purpose Outputs Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
pr1_pru0_gpo0
PRU-ICSS1 PRU0 Data Out
O
B22
pr1_pru0_gpo1
PRU-ICSS1 PRU0 Data Out
O
A21
pr1_pru0_gpo2
PRU-ICSS1 PRU0 Data Out
O
B21
pr1_pru0_gpo3
PRU-ICSS1 PRU0 Data Out
O
C21
pr1_pru0_gpo4
PRU-ICSS1 PRU0 Data Out
O
A20
pr1_pru0_gpo5
PRU-ICSS1 PRU0 Data Out
O
B20
pr1_pru0_gpo6
PRU-ICSS1 PRU0 Data Out
O
C20
pr1_pru0_gpo7
PRU-ICSS1 PRU0 Data Out
O
E19
pr1_pru0_gpo8
PRU-ICSS1 PRU0 Data Out
O
B9
pr1_pru0_gpo9
PRU-ICSS1 PRU0 Data Out
O
F10
pr1_pru0_gpo10
PRU-ICSS1 PRU0 Data Out
O
E11
pr1_pru0_gpo11
PRU-ICSS1 PRU0 Data Out
O
C11
Table 4-50. PRU-ICSS1/ECAT Signal Descriptions
TYPE [3]
ZDN [4]
pr1_edc_latch0_in
SIGNAL NAME [1]
Data In
I
AE22, K22
pr1_edc_latch1_in
Data In
I
AD22, L22
pr1_edc_sync0_out
Data Out
O
L25
pr1_edc_sync1_out
Data Out
O
J25
pr1_edio_data_in0
Data In
I
AD23
pr1_edio_data_in1
Data In
I
AE24
pr1_edio_data_in2
Data In
I
B23
pr1_edio_data_in3
Data In
I
A23
pr1_edio_data_in4
Data In
I
A22
pr1_edio_data_in5
Data In
I
A24
pr1_edio_data_in6
Data In
I
B9, C20
pr1_edio_data_in7
Data In
I
E19, F10
pr1_edio_data_out0
Data Out
O
T21
88
DESCRIPTION [2]
Terminal Configuration and Functions
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Table 4-50. PRU-ICSS1/ECAT Signal Descriptions (continued)
TYPE [3]
ZDN [4]
pr1_edio_data_out1
SIGNAL NAME [1]
Data Out
DESCRIPTION [2]
O
T20
pr1_edio_data_out2
Data Out
O
B23
pr1_edio_data_out3
Data Out
O
A23
pr1_edio_data_out4
Data Out
O
A22
pr1_edio_data_out5
Data Out
O
A24
pr1_edio_data_out6
Data Out
O
B9, C20
pr1_edio_data_out7
Data Out
O
E19, F10
pr1_edio_latch_in
Latch In
I
AE23
pr1_edio_outvalid
Data Out Valid
O
AD18
pr1_edio_sof
Start of Frame
O
AB25, AE17
Table 4-51. PRU-ICSS1/MDIO Signal Descriptions
TYPE [3]
ZDN [4]
pr1_mdio_data
SIGNAL NAME [1]
MDIO Data
DESCRIPTION [2]
IO
A17, B12, D24
pr1_mdio_mdclk
MDIO Clk
O
A12, B17, C24
Table 4-52. PRU-ICSS1/MII0 Signal Descriptions
TYPE [3]
ZDN [4]
pr1_mii0_col
SIGNAL NAME [1]
MII Collision Detect
DESCRIPTION [2]
I
A10, D25
pr1_mii0_crs
MII Carrier Sense
I
B12, G20
pr1_mii0_rxd0
MII Receive Data bit 0
I
B18
pr1_mii0_rxd1
MII Receive Data bit 1
I
A18
pr1_mii0_rxd2
MII Receive Data bit 2
I
B19
pr1_mii0_rxd3
MII Receive Data bit 3
I
A19
pr1_mii0_rxdv
MII Receive Data Valid
I
D17
pr1_mii0_rxer
MII Receive Data Error
I
D19
pr1_mii0_rxlink
MII Receive Link
I
C19, E25
pr1_mii0_txd0
MII Transmit Data bit 0
O
B11, B20
pr1_mii0_txd1
MII Transmit Data bit 1
O
A20, C11
pr1_mii0_txd2
MII Transmit Data bit 2
O
C21, E11
pr1_mii0_txd3
MII Transmit Data bit 3
O
B21, D11
pr1_mii0_txen
MII Transmit Enable
O
A21, F11
pr1_mii_mr0_clk
MII Receive Clock
I
C17
pr1_mii_mt0_clk
MII Transmit Clock
I
B10, B22
TYPE [3]
ZDN [4]
Table 4-53. PRU-ICSS1/MII1 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
pr1_mii1_col
MII Collision Detect
I
A3, F24
pr1_mii1_crs
MII Carrier Sense
I
A12, A2, F23
pr1_mii1_rxd0
MII Receive Data bit 0
I
D8
pr1_mii1_rxd1
MII Receive Data bit 1
I
G8
pr1_mii1_rxd2
MII Receive Data bit 2
I
B4
pr1_mii1_rxd3
MII Receive Data bit 3
I
F7
pr1_mii1_rxdv
MII Receive Data Valid
I
C5
pr1_mii1_rxer
MII Receive Data Error
I
B3
pr1_mii1_rxlink
MII Receive Link
I
C10, E24
Terminal Configuration and Functions
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Table 4-53. PRU-ICSS1/MII1 Signal Descriptions (continued)
TYPE [3]
ZDN [4]
pr1_mii1_txd0
SIGNAL NAME [1]
MII Transmit Data bit 0
DESCRIPTION [2]
O
E7
pr1_mii1_txd1
MII Transmit Data bit 1
O
D7
pr1_mii1_txd2
MII Transmit Data bit 2
O
A4
pr1_mii1_txd3
MII Transmit Data bit 3
O
C6
pr1_mii1_txen
MII Transmit Enable
O
C3
pr1_mii_mr1_clk
MII Receive Clock
I
F6
pr1_mii_mt1_clk
MII Transmit Clock
I
E8
Table 4-54. PRU-ICSS1/UART0 Signal Descriptions
TYPE [3]
ZDN [4]
pr1_uart0_cts_n
SIGNAL NAME [1]
UART Clear to Send
DESCRIPTION [2]
I
K22, P23
pr1_uart0_rts_n
UART Request to Send
O
L22, T22
pr1_uart0_rxd
UART Receive Data
I
K21, T21
pr1_uart0_txd
UART Transmit Data
O
L21, T20
TYPE [3]
ZDN [4]
IO
A11, G24
Table 4-55. PRU-ICSS1/eCAP Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
pr1_ecap0_ecap_capin_apwm_o
90
Enhanced capture input or Auxiliary PWM out
Terminal Configuration and Functions
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4.3.15 QSPI Interface
Table 4-56. QSPI Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
qspi_clk
QSPI Clock
IO
B12, Y18
qspi_csn
QSPI Chip Select
O
A8, AA18
qspi_d0
QSPI Data
IO
A9, AE19
qspi_d1
QSPI Data
I
AD19, E10
qspi_d2
QSPI Data
I
AE20, D10
qspi_d3
QSPI Data
I
AD20, C10
Terminal Configuration and Functions
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4.3.16 RTC Subsystem Interface
Table 4-57. RTC Subsystem Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
RTC_KALDO_ENn
Active low enable input for internal CAP_VDD_RTC
voltage regulator
I
AE2
RTC_PMIC_EN
PMIC Power Enable output generated from Generic
RTCSS
O
AD6
RTC_WAKEUP
External Wakeup Pin when Generic RTC is used
I
AE3
92
Terminal Configuration and Functions
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4.3.17 Removable Media Interfaces
Table 4-58. MMC0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
mmc0_clk
MMC/SD/SDIO Clock
IO
D1
mmc0_cmd
MMC/SD/SDIO Command
IO
D2
mmc0_dat0
MMC/SD/SDIO Data Bus
IO
C1
mmc0_dat1
MMC/SD/SDIO Data Bus
IO
C2
mmc0_dat2
MMC/SD/SDIO Data Bus
IO
B2
mmc0_dat3
MMC/SD/SDIO Data Bus
IO
B1
mmc0_dat4
MMC/SD/SDIO Data Bus
IO
E16
mmc0_dat5
MMC/SD/SDIO Data Bus
IO
C14
mmc0_dat6
MMC/SD/SDIO Data Bus
IO
D13
mmc0_dat7
MMC/SD/SDIO Data Bus
IO
D14
mmc0_pow
MMC/SD Power Switch Control
O
A16, R25
mmc0_sdcd
SD Card Detect
I
A17, N24, R25
mmc0_sdwp
SD Write Protect
I
B17, G24, L23
Table 4-59. MMC1 Signal Descriptions
TYPE [3]
ZDN [4]
mmc1_clk
SIGNAL NAME [1]
MMC/SD/SDIO Clock
DESCRIPTION [2]
IO
B15, B17, B9, Y18
mmc1_cmd
MMC/SD/SDIO Command
IO
A14, A17, AA18, F10
mmc1_dat0
MMC/SD/SDIO Data Bus
IO
AE19, B10, B5, D14
mmc1_dat1
MMC/SD/SDIO Data Bus
IO
A10, A5, AD19, D13
mmc1_dat2
MMC/SD/SDIO Data Bus
IO
AE20, B6, C14, F11
mmc1_dat3
MMC/SD/SDIO Data Bus
IO
A6, AD20, D11, E16
mmc1_dat4
MMC/SD/SDIO Data Bus
IO
B7, E11
mmc1_dat5
MMC/SD/SDIO Data Bus
IO
A7, C11
mmc1_dat6
MMC/SD/SDIO Data Bus
IO
B11, C8
mmc1_dat7
MMC/SD/SDIO Data Bus
IO
A11, B8
mmc1_sdcd
SD Card Detect
I
A2, N22
mmc1_sdwp
SD Write Protect
I
K21, T21
Table 4-60. MMC2 Signal Descriptions
TYPE [3]
ZDN [4]
mmc2_clk
SIGNAL NAME [1]
MMC/SD/SDIO Clock
DESCRIPTION [2]
IO
A12, AD21, B16, B17
mmc2_cmd
MMC/SD/SDIO Command
IO
A13, A17, AE22, B12
mmc2_dat0
MMC/SD/SDIO Data Bus
IO
A15, AD22, C5, E11
mmc2_dat1
MMC/SD/SDIO Data Bus
IO
AE23, C11, C16, C6
mmc2_dat2
MMC/SD/SDIO Data Bus
IO
A4, AD23, B11, C13
mmc2_dat3
MMC/SD/SDIO Data Bus
IO
A11, A3, AE24, D16
mmc2_dat4
MMC/SD/SDIO Data Bus
IO
B10, E8
mmc2_dat5
MMC/SD/SDIO Data Bus
IO
A10, F6
mmc2_dat6
MMC/SD/SDIO Data Bus
IO
F11, F7
mmc2_dat7
MMC/SD/SDIO Data Bus
IO
B4, D11
mmc2_sdcd
SD Card Detect
I
B3, H23
mmc2_sdwp
SD Write Protect
I
L21, T20
Terminal Configuration and Functions
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4.3.18 SPI Interfaces
Table 4-61. SPI0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
spi0_cs0
SPI Chip Select
IO
T20
spi0_cs1
SPI Chip Select
IO
R25
spi0_cs2
SPI Chip Select
IO
AD24, C24, E10
spi0_cs3
SPI Chip Select
IO
A9, AD25, N24
spi0_d0
SPI Data
IO
T22
spi0_d1
SPI Data
IO
T21
spi0_sclk
SPI Clock
IO
P23
TYPE [3]
ZDN [4]
Table 4-62. SPI1 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
spi1_cs0
SPI Chip Select
IO
A16, J25, K22, K25,
M24
spi1_cs1
SPI Chip Select
IO
D24, G24, J24, L22
spi1_cs2
SPI Chip Select
IO
AC23, D10, N22
spi1_cs3
SPI Chip Select
IO
AE21, C10, H23
spi1_d0
SPI Data
IO
B14, L25, N22
spi1_d1
SPI Data
IO
B13, H23, J25
spi1_sclk
SPI Clock
IO
D16, G24, N24
Table 4-63. SPI2 Signal Descriptions
TYPE [3]
ZDN [4]
spi2_cs0
SIGNAL NAME [1]
SPI Chip Select
DESCRIPTION [2]
IO
AC20, AD25, T23
spi2_cs1
SPI Chip Select
IO
AC25, AE17
spi2_cs2
SPI Chip Select
IO
AB19, AC23
spi2_cs3
SPI Chip Select
IO
AA19, AC24
spi2_d0
SPI Data
IO
AD17, AD24, P22
spi2_d1
SPI Data
IO
AB25, AD18, P20
spi2_sclk
SPI Clock
IO
AC18, AE21, N20
Table 4-64. SPI3 Signal Descriptions
TYPE [3]
ZDN [4]
spi3_cs0
SIGNAL NAME [1]
SPI Chip Select
DESCRIPTION [2]
IO
AD21, D11, D17
spi3_cs1
SPI Chip Select
IO
A11, B10, B18, C10
spi3_d0
SPI Data
IO
A10, AB20, D19
spi3_d1
SPI Data
IO
AC21, C17, F11
spi3_sclk
SPI Clock
IO
AE22, B10, C19
Table 4-65. SPI4 Signal Descriptions
TYPE [3]
ZDN [4]
spi4_cs0
SIGNAL NAME [1]
SPI Chip Select
IO
N25
spi4_cs1
SPI Chip Select
IO
H22
spi4_d0
SPI Data
IO
R24
spi4_d1
SPI Data
IO
P24
spi4_sclk
SPI Clock
IO
P25
94
DESCRIPTION [2]
Terminal Configuration and Functions
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4.3.19 Timer Interfaces
Table 4-66. Timer0 Signal Descriptions
SIGNAL NAME [1]
timer0
DESCRIPTION [2]
Timer trigger event / PWM out
TYPE [3]
ZDN [4]
IO
R25
TYPE [3]
ZDN [4]
IO
G24
Table 4-67. Timer1 Signal Descriptions
SIGNAL NAME [1]
timer1
DESCRIPTION [2]
Timer trigger event / PWM out
Table 4-68. Timer4 Signal Descriptions
SIGNAL NAME [1]
timer4
DESCRIPTION [2]
Timer trigger event / PWM out
TYPE [3]
ZDN [4]
IO
A13, A9, AB24, D24
Table 4-69. Timer5 Signal Descriptions
SIGNAL NAME [1]
timer5
DESCRIPTION [2]
Timer trigger event / PWM out
TYPE [3]
ZDN [4]
IO
B1, B17, C10, L22
Table 4-70. Timer6 Signal Descriptions
SIGNAL NAME [1]
timer6
DESCRIPTION [2]
Timer trigger event / PWM out
TYPE [3]
ZDN [4]
IO
A17, B2, D10, K22
TYPE [3]
ZDN [4]
IO
C24, E10, L25, Y22
Table 4-71. Timer7 Signal Descriptions
SIGNAL NAME [1]
timer7
DESCRIPTION [2]
Timer trigger event / PWM out
Terminal Configuration and Functions
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4.3.20 UART Interfaces
Table 4-72. UART0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
AC24, L25
uart0_ctsn
UART Clear to Send
I
uart0_dcdn
UART Data Carrier Detect
I
AD22
uart0_rtsn
UART Request to Send
O
AD24, J25
uart0_rxd
UART Receive Data
I
K25
uart0_txd
UART Transmit Data
O
J24
Table 4-73. UART1 Signal Descriptions
TYPE [3]
ZDN [4]
uart1_ctsn
SIGNAL NAME [1]
UART Clear to Send
DESCRIPTION [2]
IO
AD21, K22
uart1_dcdn
UART Clear to Send
I
AD23, B1, D14
uart1_dsrn
UART Request to Send
I
AE23, B2, D13
uart1_dtrn
UART Receive Data
O
AE24, C14, C2
uart1_rin
UART Transmit Data
I
AD22, C1, E16
uart1_rtsn
UART Request to Send
O
AE22, L22
uart1_rxd
UART Receive Data
IO
AB20, K21
uart1_txd
UART Transmit Data
IO
AC21, L21
Table 4-74. UART2 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
IO
A19, AB24, AD23
uart2_ctsn
UART Clear to Send
uart2_rtsn
UART Request to Send
O
AE24, B19, Y22
uart2_rxd
UART Receive Data
IO
AD22, B14, D1, D14,
P23
uart2_txd
UART Transmit Data
IO
AE23, B13, D13, D2,
T22
Table 4-75. UART3 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
IO
A17, A18, D1, H22
uart3_ctsn
UART Clear to Send
uart3_rtsn
UART Request to Send
O
B17, B18, D2, K24
uart3_rxd
UART Receive Data
IO
C14, C2, H25, R25
uart3_txd
UART Transmit Data
IO
C1, E16, G24, H24
Table 4-76. UART4 Signal Descriptions
TYPE [3]
ZDN [4]
uart4_ctsn
SIGNAL NAME [1]
UART Clear to Send
DESCRIPTION [2]
I
B1, C19
uart4_rtsn
UART Request to Send
O
B2, D19
uart4_rxd
UART Receive Data
I
A2, C16, L25
uart4_txd
UART Transmit Data
O
B3, C13, J25
Table 4-77. UART5 Signal Descriptions
TYPE [3]
ZDN [4]
uart5_ctsn
SIGNAL NAME [1]
UART Clear to Send
I
B14, C17, C2
uart5_rtsn
UART Request to Send
O
B13, C1, D17
96
DESCRIPTION [2]
Terminal Configuration and Functions
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Table 4-77. UART5 Signal Descriptions (continued)
TYPE [3]
ZDN [4]
uart5_rxd
SIGNAL NAME [1]
UART Receive Data
DESCRIPTION [2]
I
A17, B19, C17, D16
uart5_txd
UART Transmit Data
O
A15, A16, A19, B17
Terminal Configuration and Functions
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4.3.21 USB Interfaces
Table 4-78. USB0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
USB0_CE
USB0 Active high Charger Enable output
A
W22
USB0_DM
USB0 Data minus
A
W24
USB0_DP
USB0 Data plus
A
W25
USB0_DRVVBUS
USB0 Active high VBUS control output
O
G21
USB0_ID
USB0 ID
A
U24
USB0_VBUS
USB0 VBUS
A
U23
Table 4-79. USB1 Signal Descriptions
TYPE [3]
ZDN [4]
USB1_CE
SIGNAL NAME [1]
USB1 Active high Charger Enable output
A
U22
USB1_DM
USB1 Data minus
A
V25
USB1_DP
USB1 Data plus
A
V24
USB1_DRVVBUS
USB1 Active high VBUS control output
O
F25
USB1_ID
USB1 ID
A
U25
USB1_VBUS
USB1 VBUS
A
T25
98
DESCRIPTION [2]
Terminal Configuration and Functions
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4.3.22 eCAP Interfaces
Table 4-80. eCAP0 Signal Descriptions
SIGNAL NAME [1]
eCAP0_in_PWM0_out
DESCRIPTION [2]
Enhanced Capture 0 input or Auxiliary PWM0 output
TYPE [3]
ZDN [4]
IO
G24
TYPE [3]
ZDN [4]
IO
J24, R25, Y22
Table 4-81. eCAP1 Signal Descriptions
SIGNAL NAME [1]
eCAP1_in_PWM1_out
DESCRIPTION [2]
Enhanced Capture 1 input or Auxiliary PWM1 output
Table 4-82. eCAP2 Signal Descriptions
SIGNAL NAME [1]
eCAP2_in_PWM2_out
DESCRIPTION [2]
Enhanced Capture 2 input or Auxiliary PWM2 output
TYPE [3]
ZDN [4]
IO
AB24, K25, M24
Terminal Configuration and Functions
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4.3.23 eHRPWM Interfaces
Table 4-83. eHRPWM0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
ehrpwm0_synci
Sync input to eHRPWM0 module from an external pin
I
AC21, M24, P25, T20
ehrpwm0_synco
Sync Output from eHRPWM0 module to an external pin
O
AE18, B19, C21, C5,
D11
ehrpwm0_tripzone_input
eHRPWM0 trip zone input
I
AB20, H23, P24, T21
ehrpwm0A
eHRPWM0 A output.
O
AD25, N24, P23
ehrpwm0B
eHRPWM0 B output.
O
AC23, N22, T22
Table 4-84. eHRPWM1 Signal Descriptions
TYPE [3]
ZDN [4]
ehrpwm1_tripzone_input
SIGNAL NAME [1]
eHRPWM1 trip zone input
DESCRIPTION [2]
I
A19, AD21, C3, P20
ehrpwm1A
eHRPWM1 A output.
O
A18, AE20, AE21,
C6, T21
ehrpwm1B
eHRPWM1 B output.
O
A4, AC25, AD20,
B18, T20
TYPE [3]
ZDN [4]
Table 4-85. eHRPWM2 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
ehrpwm2_tripzone_input
eHRPWM2 trip zone input
I
B21, F11, T23
ehrpwm2A
eHRPWM2 A output.
O
B10, B22, R25
ehrpwm2B
eHRPWM2 B output.
O
A10, A21, G24
Table 4-86. eHRPWM3 Signal Descriptions
TYPE [3]
ZDN [4]
ehrpwm3_synci
SIGNAL NAME [1]
Sync input to eHRPWM3 module or sync output to
external PWM
DESCRIPTION [2]
I
R24
ehrpwm3_synco
Sync input to eHRPWM3 module or sync output to
external PWM
O
AB18
ehrpwm3_tripzone_input
eHRPWM3 trip zone input
I
N25
ehrpwm3A
eHRPWM3 A output.
O
AC25, AE19
ehrpwm3B
eHRPWM3 B output.
O
AB25, AD19
Table 4-87. eHRPWM4 Signal Descriptions
TYPE [3]
ZDN [4]
ehrpwm4_tripzone_input
SIGNAL NAME [1]
eHRPWM4 trip zone input
DESCRIPTION [2]
I
N20
ehrpwm4A
eHRPWM4 A output.
O
H25
ehrpwm4B
eHRPWM4 B output.
O
H24
TYPE [3]
ZDN [4]
Table 4-88. eHRPWM5 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
ehrpwm5_tripzone_input
eHRPWM5 trip zone input
I
P22
ehrpwm5A
eHRPWM5 A output.
O
H22
ehrpwm5B
eHRPWM5 B output.
O
K24
100
Terminal Configuration and Functions
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4.3.24 eQEP Interfaces
Table 4-89. eQEP0 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
TYPE [3]
ZDN [4]
eQEP0_index
eQEP0 index.
IO
A13, M25
eQEP0_strobe
eQEP0 strobe.
IO
B16, L24
eQEP0A_in
eQEP0A quadrature input
I
A14, L23
eQEP0B_in
eQEP0B quadrature input
I
B15, K23
TYPE [3]
ZDN [4]
C17, E8
Table 4-90. eQEP1 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
eQEP1_index
eQEP1 index.
IO
eQEP1_strobe
eQEP1 strobe.
IO
D17, F6
eQEP1A_in
eQEP1A quadrature input
I
C19, D7
eQEP1B_in
eQEP1B quadrature input
I
D19, E7
TYPE [3]
ZDN [4]
Table 4-91. eQEP2 Signal Descriptions
SIGNAL NAME [1]
DESCRIPTION [2]
eQEP2_index
eQEP2 index.
IO
B11, C20
eQEP2_strobe
eQEP2 strobe.
IO
A11, E19
eQEP2A_in
eQEP2A quadrature input
I
A20, E11
eQEP2B_in
eQEP2B quadrature input
I
B20, C11
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5 Specifications
5.1
Absolute Maximum Ratings
over junction temperature range (unless otherwise noted)(1)(2)
MIN
MAX
VDD_MPU
Supply voltage for the MPU domain
–0.5
1.5
V
VDD_CORE
Supply voltage range for the CORE domain
–0.5
1.5
V
CAP_VDD_RTC(3)
Supply voltage range for the RTC domain
–0.5
1.5
V
VDDS_RTC
Supply voltage range for the RTC domain
–0.5
2.1
V
VDDS_OSC
Supply voltage range for the System oscillator
–0.5
2.1
V
VDDS_SRAM_CORE_BG
Supply voltage range for the Core SRAM and Bandgap LDOs
–0.5
2.1
V
VDDS_SRAM_MPU_BB
Supply voltage range for the MPU SRAM and BB LDOs
–0.5
2.1
V
VDDS_PLL_DDR
Supply voltage range for the DPLL DDR
–0.5
2.1
V
VDDS_PLL_CORE_LCD
Supply voltage range for the DPLL CORE, EXTDEV, and LCD
–0.5
2.1
V
VDDS_PLL_MPU
Supply voltage range for the DPLL MPU
–0.5
2.1
V
VDDS_DDR
Supply voltage range for the DDR IO domain
–0.5
2.1
V
VDDS
Supply voltage range for all dual-voltage IO domains
–0.5
2.1
V
VDDA1P8V_USB0
Supply voltage range for USBPHY and DPLL PER
–0.5
2.1
V
VDDA1P8V_USB1
Supply voltage range for USBPHY
–0.5
2.1
V
VDDA_ADC0
Supply voltage range for ADC0
–0.5
2.1
V
VDDA_ADC1
Supply voltage range for ADC1
–0.5
2.1
V
VDDSHV1
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV2
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV3
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV5
Supply voltage range for the CLKOUT voltage domain
–0.5
3.8
V
VDDSHV6
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV7
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV8
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV9
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV10
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDSHV11
Supply voltage range for the dual-voltage IO domain
–0.5
3.8
V
VDDA3P3V_USB0
Supply voltage range for USBPHY
–0.5
4
V
VDDA3P3V_USB1
Supply voltage range for USBPHY
–0.5
4
V
VDDS3P3V_IOLDO
Supply voltage range for the dual-voltage IO LDO
–0.5
3.8
V
VDDS_CLKOUT
Supply voltage range for CLKOUT domain
–0.5
2.1
V
USB0_VBUS(4)
Supply voltage range for USB VBUS comparator input
–0.5
5.25
V
USB1_VBUS(4)
Supply voltage range for USB VBUS comparator input
–0.5
5.25
V
DDR_VREF
Supply voltage range for the DDR3/DDR3L HSTL, LPDDR2
HSUL_12 reference voltage
–0.3
1.1
V
Steady State Max. Voltage at all
IO pins(5)
UNIT
–0.5 V to IO supply voltage + 0.3 V
USB0_ID(6)
Steady state maximum voltage range for the USB ID input
–0.5
2.1
V
(6)
Steady state maximum voltage range for the USB ID input
–0.5
2.1
V
USB1_ID
Transient Overshoot and
Undershoot specification at IO
terminal
Latch-up Performance(7)
Tstg(8)
20% of corresponding IO supply voltage for
up to 20% of signal period (see Figure 5-1)
Class II (105°C)
Latch-up I-test performance current-pulse
injection on each IO pin
±100
Latch-up overvoltage performance voltage
injection on each IO pin
±100
mA
Storage temperature
–55
155
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to their associated VSS or VSSA_x.
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Absolute Maximum Ratings (continued)
over junction temperature range (unless otherwise noted)(1)(2)
(3) This supply is sourced from an internal LDO when RTC_KALDO_ENn is low. If RTC_KALDO_ENn is high, this supply must be sourced
from an external power supply.
(4) This terminal is connected to a fail-safe IO and does not have a dependence on any IO supply voltage.
(5) This parameter applies to all IO terminals which are not fail-safe and the requirement applies to all values of IO supply voltage. For
example, if the voltage applied to a specific IO supply is 0 volts the valid input voltage range for any IO powered by that supply will be
–0.5 to +0.3 volts. Special attention should be applied anytime peripheral devices are not powered from the same power sources used
to power the respective IO supply. It is important the attached peripheral never sources a voltage outside the valid input voltage range,
including power supply ramp-up and ramp-down sequences.
(6) This terminal is connected to analog circuits in the respective USB PHY. The circuit sources a known current while measuring the
voltage to determine if the terminal is connected to VSSA_USB with a resistance less than 10 Ω or greater than 100 kΩ. The terminal
should be connected to ground for USB host operation or open-circuit for USB peripheral operation, and should never be connected to
any external voltage source.
(7) For current pulse injection:
Pins stressed per JEDEC JESD78D (Class II) and passed with specified I/O pin injection current and clamp voltage of 1.5 times
maximum recommended I/O voltage and negative 0.5 times maximum recommended I/O voltage.
For overvoltage performance:
Supplies stressed per JEDEC JESD78D (Class II) and passed specified voltage injection.
(8) For tape and reel the storage temperature range is [–10°C; +50°C] with a maximum relative humidity of 70%. TI recommends returning
to ambient room temperature before usage.
Fail-safe IO terminals are designed such they do not have dependencies on the respective IO power
supply voltage. This allows external voltage sources to be connected to these IO terminals when the
respective IO power supplies are turned off. The USB0_VBUS, USB1_VBUS, and DDR_RESETn are the
only fail-safe IO terminals. All other IO terminals are not fail-safe and the voltage applied to them should
be limited to the value defined by the Steady State Max. Voltage at all IO pins parameter in Section 5.1.
Overshoot = 20% of nominal
IO supply voltage
Tovershoot
Tperiod
Tundershoot
Undershoot = 20% of nominal
IO supply voltage
Figure 5-1. Tovershoot + Tundershoot < 20% of Tperiod
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ESD Ratings
VALUE
VESD
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Electrostatic discharge
(ESD)
UNIT
±1000
Charged device model (CDM), per JESD22-C101(2)
V
±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3
Power-On Hours (POH)(1)(2)(3)(4)
OPERATING
CONDITION
COMMERCIAL
INDUSTRIAL
EXTENDED
JUNCTION TEMP
(Tj)
LIFETIME
(POH)(5)
JUNCTION TEMP
(Tj)
LIFETIME
(POH)(5)
JUNCTION TEMP
(Tj)
LIFETIME
(POH)(5)
Nitro
0°C to 90°C
100K
–40°C to 90°C
100K
–40°C to 105°C
84.4K
Turbo
0°C to 90°C
100K
–40°C to 90°C
100K
–40°C to 105°C
100K
OPP120
0°C to 90°C
100K
–40°C to 90°C
100K
–40°C to 105°C
100K
OPP100
0°C to 90°C
100K
–40°C to 90°C
100K
–40°C to 105°C
100K
OPP50
0°C to 90°C
100K
–40°C to 90°C
100K
–40°C to 105°C
100K
(1) The POH information in this table is provided solely for your convenience and does not extend or modify the warranty provided under
TI's standard terms and conditions for TI semiconductor products.
(2) To avoid significant degradation, the device POH must be limited as described in this table.
(3) Logic functions and parameter values are not assured out of the range specified in the recommended operating conditions.
(4) The previous notations cannot be deemed a warranty or deemed to extend or modify the warranty under TI's standard terms and
conditions for TI semiconductor products.
(5) POH = Power-on hours when the device is fully functional.
104
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5.4
SPRS851C – JUNE 2014 – REVISED APRIL 2016
Operating Performance Points
Device operating performance points (OPPs) are defined in Table 5-1, Table 5-2, and Table 5-3.
Table 5-1. VDD_CORE OPPs(1)
VDD_CORE OPP
VDD_CORE
DDR3/DDR3L(2)
LPDDR2(2)
L3 and L4
1.144 V
400 MHz
266 MHz
200 MHz and
100 MHz
1V
Not supported
133 MHz
100 MHz and
50 MHz
MIN
NOM
MAX
OPP100
1.056 V
1.100 V
OPP50
0.912 V
0.950 V
(1) Frequencies in this table indicate maximum performance for a given OPP condition.
(2) This parameter represents the maximum memory clock frequency. Because data is transferred on both edges of the clock, double-data
rate (DDR), the maximum data rate is two times the maximum memory clock frequency defined in this table.
Table 5-2. VDD_MPU OPPs(1)
VDD_MPU OPP
VDD_MPU
ARM (A9)
MIN
NOM
MAX
Nitro
1.272 V
1.325 V
1.378 V
1 GHz
Turbo
1.210 V
1.260 V
1.326 V
800 MHz
OPP120
1.152 V
1.200 V
1.248 V
720 MHz
OPP100
1.056 V
1.100 V
1.144 V
600 MHz
OPP50
0.912 V
0.950 V
1.000 V
300 MHz
(1) Frequencies in this table indicate maximum performance for a given OPP condition.
Table 5-3. Valid Combinations of VDD_CORE and
VDD_MPU OPPs(1)
VDD_CORE
VDD_MPU
OPP50
OPP50
OPP100
OPP50
OPP100
OPP100
OPP100
OPP120
OPP100
Turbo
OPP100
Nitro
(1) OPP combinations listed in this table have been tested. Other OPP combinations are not supported.
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Recommended Operating Conditions
over junction temperature range (unless otherwise noted)
SUPPLY NAME
DESCRIPTION
VDD_CORE
VDD_MPU
MIN
NOM
MAX
Supply voltage range for core domain; OPP100
1.056
1.100
1.144
Supply voltage range for core domain; OPP50
0.912
0.950
1.000
Supply voltage range for MPU domain, Nitro
1.272
1.325
1.378
Supply voltage range for MPU domain; Turbo
1.210
1.260
1.326
Supply voltage range for MPU domain; OPP120
1.152
1.200
1.248
Supply voltage range for MPU domain; OPP100
1.056
1.100
1.144
UNIT
V
V
Supply voltage range for MPU domain; OPP50
0.912
0.950
1.000
CAP_VDD_RTC(1)
Supply voltage range for RTC core domain
0.900
1.100
1.250
V
VDDS_RTC
Supply voltage range for RTC domain
1.710
1.800
1.890
V
Supply voltage range for DDR IO domain (DDR3)
1.425
1.500
1.575
Supply voltage range for DDR IO domain (DDR3L)
1.283
1.350
1.418
Supply voltage range for DDR IO domain (LPDDR2)
1.140
1.200
1.260
VDDS(2)
Supply voltage range for all dual-voltage IO domains
1.710
1.800
1.890
V
VDDS_SRAM_CORE_BG
Supply voltage range for Core SRAM LDOs, Analog
1.710
1.800
1.890
V
VDDS_SRAM_MPU_BB
Supply voltage range for MPU SRAM LDOs, Analog
1.710
1.800
1.890
V
VDDS_PLL_DDR(3)
Supply voltage range for DPLL DDR, Analog
1.710
1.800
1.890
V
Supply voltage range for DPLL CORE, EXTDEV, and LCD,
Analog
1.710
1.800
1.890
V
Supply voltage range for DPLL MPU, Analog
1.710
1.800
1.890
V
Supply voltage range for system oscillator, Analog
1.710
1.800
1.890
V
VDDA1P8V_USB0
Supply voltage range for USBPHY and DPLL PER, Analog,
1.8 V
1.710
1.800
1.890
V
VDDA1P8V_USB1
Supply voltage range for USBPHY, Analog, 1.8 V
1.710
1.800
1.890
V
VDDA3P3V_USB0
Supply voltage range for USBPHY, Analog, 3.3 V
3.135
3.300
3.465
V
VDDA3P3V_USB1
Supply voltage range for USBPHY, Analog, 3.3 V
3.135
3.300
3.465
V
VDDA_ADC0
Supply voltage range for ADC0, Analog
1.710
1.800
1.890
V
VDDA_ADC1
Supply voltage range for ADC1, Analog
1.710
1.800
1.890
V
1.710
1.800
1.890
VDDS_DDR
(3)
VDDS_PLL_CORE_LCD
VDDS_PLL_MPU
(3)
VDDS_OSC
(3)
V
VDDSHV1
Supply voltage range for dual-voltage IO
domain
1.8-V operation
3.3-V operation
3.135
3.300
3.465
VDDSHV2
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV3
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV5
Supply voltage range for CLKOUT voltage
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV6
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV7
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV8
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV9
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV10
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
VDDSHV11
Supply voltage range for dual-voltage IO
domain
1.8-V operation
1.710
1.800
1.890
3.3-V operation
3.135
3.300
3.465
DDR_VREF
Supply voltage range for the DDR3/DDR3L HSTL, LPDDR2
HSUL_12 reference input
0.49 ×
VDDS_DDR
0.50 ×
VDDS_DDR
0.51 ×
VDDS_DDR
V
VDDS3P3V_IOLDO
Supply voltage range for the dual-voltage IO LDO
3.135
3.3
3.465
V
VDDS_CLKOUT
Supply voltage range for CLKOUT domain
1.71
1.8
1.89
V
106
Specifications
V
V
V
V
V
V
V
V
V
V
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Recommended Operating Conditions (continued)
over junction temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
USB0_VBUS
SUPPLY NAME
Voltage range for USB VBUS comparator input
DESCRIPTION
0.000
5.000
5.250
V
USB1_VBUS
Voltage range for USB VBUS comparator input
0.000
5.000
5.250
V
USB0_ID
Voltage range for the USB ID input
(4)
USB1_ID
Voltage range for the USB ID input
(4)
Commercial Temperature
Operating Temperature
Range, Tj
0
V
V
90
Industrial Temperature
–40
90
Extended Temperature
–40
105
°C
(1) This supply is sourced from an internal LDO when RTC_KALDO_ENn is low. If RTC_KALDO_ENn is high, this supply must be sourced
from an external power supply.
(2) VDDS should be supplied irrespective of 1.8-V or 3.3-V mode of operation of the dual-voltage IOs.
(3) For more details on power supply requirements, see Section 5.13.2.1.1.
(4) This terminal is connected to analog circuits in the respective USB PHY. The circuit sources a known current while measuring the
voltage to determine if the terminal is connected to VSSA_USB with a resistance less than 10 Ω or greater than 100 kΩ. The terminal
should be connected to ground for USB host operation or open-circuit for USB peripheral operation, and should never be connected to
any external voltage source.
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Power Consumption Summary
Table 5-4 summarizes the maximum power consumption at each power terminal.
Note: Data in the Maximum Current Ratings table (Table 5-4) represents worst-case power consumption
based on various applications of the device using practical operating conditions. The data primarily
benefits the power supply designer trying to understand the worst-case power consumption expected from
each power rail.
Table 5-4. Maximum Current Ratings at Power Terminals (1)
PARAMETER
SUPPLY NAME
VDD_CORE
VDD_MPU
MAX
UNIT
Maximum current rating for the core domain; OPP100
600
mA
Maximum current rating for the core domain; OPP50
400
mA
DESCRIPTION
Maximum current rating for the MPU domain; Nitro
at 1 GHz
1000
Maximum current rating for the MPU domain; Turbo
at 800 MHz
800
Maximum current rating for the MPU domain; OPP120
at 720 MHz
720
Maximum current rating for the MPU domain; OPP100
at 600 MHz
600
Maximum current rating for the MPU domain; OPP50
at 300 MHz
350
mA
CAP_VDD_RTC (2)
Maximum current rating for RTC domain and LDO output
2
mA
VDDS_RTC
Maximum current rating for the RTC domain
5
mA
VDDS_DDR
Maximum current rating for DDR IO domain; DDR3/DDR3L
300
mA
Maximum current rating for DDR IO domain; LPDDR2
150
VDDS
Maximum current rating for all dual-voltage IO domains
70
mA
VDDS_SRAM_CORE_BG
Maximum current rating for core SRAM LDOs
10
mA
VDDS_SRAM_MPU_BB
Maximum current rating for MPU SRAM LDOs
10
mA
VDDS_PLL_DDR
Maximum current rating for the DPLL DDR
10
mA
VDDS_PLL_CORE_LCD
Maximum current rating for the DPLL CORE, EXTDEV, and LCD
20
mA
VDDS_PLL_MPU
Maximum current rating for the DPLL MPU
10
mA
VDDS_OSC
Maximum current rating for the system oscillator
5
mA
VDDA1P8V_USB0
Maximum current rating for USBPHY 1.8 V and DPLL PER
25
mA
VDDA1P8V_USB1
Maximum current rating for USBPHY 1.8 V
25
mA
VDDA3P3V_USB0
Maximum current rating for USBPHY 3.3 V
40
mA
VDDA3P3V_USB1
Maximum current rating for USBPHY 3.3 V
40
mA
VDDS3P3V_IOLDO
Maximum current rating for the dual-voltage IO LDO
30
mA
VDDA_ADC0
Maximum current rating for ADC0
10
mA
VDDA_ADC1
Maximum current rating for ADC1
10
mA
VDDSHV1
Maximum current rating for dual-voltage IO domain
30
mA
VDDSHV2
Maximum current rating for dual-voltage IO domain
80
mA
VDDSHV3
Maximum current rating for dual-voltage IO domain
100
mA
VDDSHV5
Maximum current rating for dual-voltage IO domain
10
mA
VDDSHV6
Maximum current rating for dual-voltage IO domain
50
mA
VDDSHV7
Maximum current rating for dual-voltage IO domain
10
mA
VDDSHV8
Maximum current rating for dual-voltage IO domain
50
mA
VDDSHV9
Maximum current rating for dual-voltage IO domain
50
mA
VDDSHV10
Maximum current rating for dual-voltage IO domain
50
mA
VDDSHV11
Maximum current rating for dual-voltage IO domain
50
mA
VDDS_CLKOUT
Maximum current rating for CLKOUT domain
10
mA
(1)
(2)
108
Current ratings specified in this table are worst-case estimates. Actual application power supply estimates could be lower. For more
information, see AM43xx Power Consumption Summary.
This supply is sourced from an internal LDO when RTC_KALDO_ENn is low. If RTC_KALDO_ENn is high, this supply must be sourced
from an external power supply.
Specifications
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5.7
SPRS851C – JUNE 2014 – REVISED APRIL 2016
DC Electrical Characteristics
over recommended ranges of supply voltage and operating temperature (unless otherwise noted)(1)
PARAMETER
MIN
TYP
MAX
UNIT
DDR_CSn[1:0], DDR_CKE[1:0], DDR_CK, DDR_CKn, DDR_CASn, DDR_RASn, DDR_WEn, DDR_BA[2:0], DDR_A[15:0],
DDR_ODT[1:0], DDR_D[31:0], DDR_DQM[3:0], DDR_DQS[3:0], DDR_DQSn[3:0] pins (DDR3/DDR3L - HSTL mode)
VIH
High-level input voltage
VDDS_DDR =
1.5 V
DDR_VREF +
0.1
VDDS_DDR =
1.35 V
DDR_VREF +
0.09
VDDS_DDR =
1.5 V
DDR_VREF –
0.1
VDDS_DDR =
1.35 V
DDR_VREF –
0.09
VIL
Low-level input voltage
VHYS
Hysteresis voltage at an input
VOH
High-level output voltage, driver enabled, pullup
or pulldown disabled
IOH = 8 mA
VOL
Low-level output voltage, driver enabled, pullup
or pulldown disabled
IOL = 8 mA
NA
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
II
Input leakage current, Receiver disabled, pullup enabled
Input leakage current, Receiver disabled, pulldown enabled
IOZ
V
Total leakage current through the terminal connection of a driverreceiver combination that may include a pullup or pulldown. The
driver output is disabled and the pullup or pulldown is inhibited.
V
V
VDDS_DDR –
0.4
V
0.4
–10
10
–240
–40
40
240
–10
10
V
µA
µA
DDR_CSn[1:0], DDR_CKE[1:0], DDR_CK, DDR_CKn, DDR_CASn, DDR_RASn, DDR_WEn, DDR_BA[2:0], DDR_A[15:0],
DDR_D[31:0], DDR_DQM[3:0], DDR_DQS[3:0], DDR_DQSn[3:0] pins (LPDDR2 - HSUL_12 mode)(2)
VIH
High-level input voltage
VDDS_DDR =
1.2 V
VIL
Low-level input voltage
VDDS_DDR =
1.2 V
VHYS
Hysteresis voltage at an input
VOH
High-level output voltage, driver enabled, pullup
or pulldown disabled
IOH = 8 mA
VOL
Low-level output voltage, driver enabled, pullup
or pulldown disabled
IOL = 8 mA
Input leakage current, Receiver disabled, pullup enabled
Input leakage current, Receiver disabled, pulldown enabled
IOZ
V
DDR_VREF –
0.13
NA
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
II
DDR_VREF +
0.13
Total leakage current through the terminal connection of a driverreceiver combination that may include a pullup or pulldown. The
driver output is disabled and the pullup or pulldown is inhibited.
V
V
VDDS_DDR –
0.4
V
0.4
–10
10
–240
–40
40
240
–10
10
V
µA
µA
DDR_RESETn(3)
VIH
High-level input voltage
NA
VIL
Low-level input voltage
NA
VHYS
Hysteresis voltage at an input
VOH
High-level output voltage, driver enabled, pullup
or pulldown disabled
IOH = 8 mA
VOL
Low-level output voltage, driver enabled, pullup
or pulldown disabled
IOL = 8 mA
NA
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
II
Input leakage current, Receiver disabled, pullup enabled
Input leakage current, Receiver disabled, pulldown enabled
VDDS_DDR –
0.4
V
0.4
–10
10
–240
–24
24
240
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µA
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DC Electrical Characteristics (continued)
over recommended ranges of supply voltage and operating temperature (unless otherwise noted)(1)
PARAMETER
IOZ
MIN
Total leakage current through the terminal connection of a driverreceiver combination that may include a pullup or pulldown. The
driver output is disabled and the pullup or pulldown is inhibited.
TYP
–10
MAX
UNIT
10
µA
RTC_PWRONRSTn
0.65 ×
VDDS_RTC
VIH
High-level input voltage
VIL
Low-level input voltage
VHYS
Hysteresis voltage at an input
II
Input leakage current
V
0.35 ×
VDDS_RTC
0.065
V
V
–1
1
µA
RTC_PMIC_EN
VOH
High-level output voltage, driver enabled, pullup
or pulldown disabled
IOH = 6 mA
VOL
Low-level output voltage, driver enabled, pullup
or pulldown disabled
IOL = 6 mA
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
II
IOZ
VDDS_RTC –
0.45
V
0.45
–1
1
–200
–40
Input leakage current, Receiver disabled, pulldown enabled
40
200
Total leakage current through the terminal connection of a driverreceiver combination that may include a pullup or pulldown. The
driver output is disabled and the pullup or pulldown is inhibited.
–1
1
Input leakage current, Receiver disabled, pullup enabled
V
µA
µA
RTC_WAKEUP
0.65 ×
VDDS_RTC
VIH
High-level input voltage
VIL
Low-level input voltage
VHYS
Hysteresis voltage at an input
0.35 ×
VDDS_RTC
0.15
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
II
V
Input leakage current, Receiver disabled, pullup enabled
Input leakage current, Receiver disabled, pulldown enabled
V
V
–1
1
–200
–40
40
200
µA
TCK (VDDSHV3 = 1.8 V)
VIH
High-level input voltage
VIL
Low-level input voltage
VHYS
Hysteresis voltage at an input
0.4
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
–8
II
1.45
V
0.46
Input leakage current, Receiver disabled, pullup enabled
Input leakage current, Receiver disabled, pulldown enabled
V
V
8
–161
–100
–52
52
100
170
µA
TCK (VDDSHV3 = 3.3 V)
VIH
High-level input voltage
VIL
Low-level input voltage
VHYS
Hysteresis voltage at an input
0.4
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
–18
II
2.15
V
0.46
Input leakage current, Receiver disabled, pullup enabled
Input leakage current, Receiver disabled, pulldown enabled
V
V
18
–243
–100
–19
51
110
210
µA
(4)
PWRONRSTn (VDDSHV3 = 1.8 V or 3.3 V)
VIH
High-level input voltage
VIL
Low-level input voltage
110
Specifications
1.35
V
0.5
V
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
DC Electrical Characteristics (continued)
over recommended ranges of supply voltage and operating temperature (unless otherwise noted)(1)
PARAMETER
VHYS
II
MIN
Hysteresis voltage at an input
Input leakage current
TYP
MAX
0.07
UNIT
V
VI = 1.8 V
0.1
VI = 3.3 V
2
µA
All other LVCMOS pins (VDDSHVx = 1.8 V; x=1–11)
VIH
VIL
High-level input voltage
0.65 ×
VDDSHVx
Low-level input voltage
VHYS
Hysteresis voltage at an input
VOH
High-level output voltage, driver enabled, pullup
or pulldown disabled
IOH = 6 mA
VOL
Low-level output voltage, driver enabled, pullup
or pulldown disabled
IOL = 6 mA
II
0.35 ×
VDDSHVx
V
0.305
V
0.18
VDDSHVx –
0.45
V
0.45
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
–8.4
Input leakage current, Receiver disabled, pullup enabled
–161
–100
–52
52
100
170
Input leakage current, Receiver disabled, pulldown enabled
IOZ
V
Total leakage current through the terminal connection of a driverreceiver combination that may include a pullup or pulldown. The
driver output is disabled and the pullup or pulldown is inhibited.
V
8.4
–8.4
µA
8.4
µA
All other LVCMOS pins (VDDSHVx = 3.3 V; x=1–11)
VIH
High-level input voltage
VIL
Low-level input voltage
2
VHYS
Hysteresis voltage at an input
VOH
High-level output voltage, driver enabled, pullup
or pulldown disabled
IOH = 6 mA
VOL
Low-level output voltage, driver enabled, pullup
or pulldown disabled
IOL = 6 mA
0.265
Input leakage current, Receiver disabled, pullup or pulldown
inhibited
II
Input leakage current, Receiver disabled, pullup enabled
Input leakage current, Receiver disabled, pulldown enabled
IOZ
V
Total leakage current through the terminal connection of a driverreceiver combination that may include a pullup or pulldown. The
driver output is disabled and the pullup or pulldown is inhibited.
0.8
V
0.44
V
VDDSHVx –
0.45
V
0.45
–18
V
18
–243
–100
–19
51
110
210
–18
µA
18
µA
XTALIN (OSC0)
VIH
VIL
High-level input voltage
0.65 ×
VDDS_OSC
Low-level input voltage
V
0.35 ×
VDDS_OSC
V
RTC_XTALIN (OSC1)
VIH
VIL
High-level input voltage
0.65 ×
VDDS_RTC
Low-level input voltage
V
0.35 ×
VDDS_RTC
V
(1) The interfaces or signals described in this table correspond to the interfaces or signals available in multiplexing mode 0. All interfaces or
signals multiplexed on the terminals described in this table have the same DC electrical characteristics.
(2) For mapping to the LPDDR2 interface terminal name, see the AM437x Sitara Processors Technical Reference Manual.
(3) The DDR_RESETn terminal supports fail-safe operation.
(4) The input voltage thresholds for this input are not a function of VDDSHV3.
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ADC0: Touch Screen Controller and Analog-to-Digital Subsystem Electrical Parameters
The touch screen controller (TSC) and analog-to-digital converter (ADC) subsystem (ADC0) contains a
single-channel ADC connected to an 8:1 analog multiplexer which operates as a general-purpose ADC
with optional support for interleaving TSC conversions for 4-wire, 5-wire, or 8-wire resistive panels. The
ADC0 subsystem can be configured for use in one of the following applications:
• 8 general-purpose ADC channels
• 4-wire TSC with 4 general-purpose ADC channels
• 5-wire TSC with 3 general-purpose ADC channels
• 8-wire TSC
Table 5-5 summarizes the ADC0 subsystem electrical parameters.
Table 5-5. ADC0 Electrical Parameters
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
ANALOG INPUT
ADC0_VREFP(1)
(0.5 × VDDA_ADC0) +
0.25
VDDA_ADC0
V
ADC0_VREFN(1)
0
(0.5 × VDDA_ADC0) –
0.25
V
ADC0_VREFP + ADC0_VREFN
Full-scale Input Range
Differential Nonlinearity
(DNL)
Integral Nonlinearity (INL)
VDDA_ADC0
Internal Voltage Reference
V
0
VDDA_ADC0
External Voltage Reference
ADC0_VREFN
ADC0_VREFP
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
–1
0.5
1
Source impedance = 50 Ω
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
–2
±1
2
V
LSB
LSB
Source Impedance = 1 kΩ
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
±1
Gain Error
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
±2
LSB
Offset Error
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
±2
LSB
Input Sampling Capacitance
5.5
pF
Signal-to-Noise Ratio
(SNR)
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
70
dB
Total Harmonic Distortion
(THD)
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
75
dB
112
Specifications
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SPRS851C – JUNE 2014 – REVISED APRIL 2016
Table 5-5. ADC0 Electrical Parameters (continued)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
Spurious Free Dynamic
Range
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
80
dB
Signal-to-Noise Plus
Distortion
Internal Voltage Reference:
VDDA_ADC0 = 1.8 V
External Voltage Reference:
VREFP – VREFN = 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
69
dB
VREFP and VREFN Input Impedance
Input Impedance of
AIN[7:0](2)
20
f = input frequency
kΩ
–12
[1/((65.97 × 10
Ω
) × f)]
SAMPLING DYNAMICS
ADC Clock Frequency
13
Conversion Time
13
Acquisition Time
Sampling Rate(3)
2
ADC0 Clock = 13 MHz
Channel-to-Channel Isolation
MHz
ADC0
clock
cycles
257
ADC0
clock
cycles
867
kSPS
100
dB
2
Ω
TOUCH SCREEN SWITCH DRIVERS
Pullup and Pulldown Switch ON-Resistance (Ron)
Pullup and Pulldown Switch
Source impedance = 500 Ω
Current Leakage Ileak
0.5
uA
Drive Current
25
mA
Touch Screen Resistance
6
kΩ
Pen Touch Detect
2
kΩ
(1) The ADC0_VREFP and ADC0_VREFN terminals should not be allowed to float to prevent noise from coupling into the ADC. If
ADC0_VREFN is not used to connect an external negative voltage reference to the ADC, connect it to VSSA_ADC. If ADC0_VREFP is
not used to connect an external positive voltage reference to the ADC, connect it to VSSA_ADC or VDDA_ADC0. Connecting
ADC0_VREFP to VSSA_ADC in this use case is the preferred option because VDDA_ADC0 may couple more noise into the ADC than
VSSA_ADC.
(2) This parameter is valid when the respective AIN terminal is configured to operate as a general-purpose ADC input.
(3) The maximum sample rate assumes a conversion time of 13 ADC clock cycles with the acquisition time configured for the minimum of 2
ADC clock cycles, where it takes a total of 15 ADC clock cycles to sample the analog input and convert it to a positive binary weighted
digital value.
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ADC1: Analog-to-Digital Subsystem Electrical Parameters
The analog-to-digital converter (ADC) subsystem implements a basic general-purpose ADC1.
Table 5-6 summarizes the ADC1 subsystem electrical parameters.
Table 5-6. ADC1 Electrical Parameters
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
ANALOG INPUT
ADC1_VREFP
Bypass mode
(0.5 × VDDA_ADC1) +
0.25
Gain mode
(0.5 × VDDA_ADC1) +
0.25
(1)
Bypass mode
0
Gain mode
0
VDDA_ADC1
V
1.2(2)
(0.5 × VDDA_ADC1) –
0.25
(1)
ADC1_VREFN
ADC1_VREFP + ADC1_VREFN
(0.5 × VDDA_ADC1) –
0.25
VDDA_ADC1
ADC1_VREFN
ADC1_VREFP
Gain mode, Internal Voltage
Reference
–(VDDA_ADC1 / Gain)
(VDDA_ADC1 / Gain)
Gain mode, External Voltage
Reference
–((ADC1_VREFP –
ADC1_VREFN) / Gain)
((ADC1_VREFP –
ADC1_VREFN) / Gain)
Bypass mode, External Voltage
Reference
Gain mode (differential)
Differential Nonlinearity
(DNL)
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
V
V
0
Preamp output
Preamp Gain
0.5(2)
VDDA_ADC1
Bypass mode, Internal Voltage
Reference
Full-scale Input Range
VDDA_ADC1
V
2.4
–1
0.5
GAIN_CTRLx[MSB:LSB] = 00b
12
GAIN_CTRLx[MSB:LSB] = 01b
14
GAIN_CTRLx[MSB:LSB] = 10b
16
GAIN_CTRLx[MSB:LSB] = 11b
V
1
LSB
18
Preamp Bandwidth
Gain mode
15
50
–2
±1
Integral Nonlinearity (INL)
Bypass mode
Source impedance = ≤ 1 kΩ
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
kHz
2
LSB
Gain mode
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
±1
Gain Error
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
±2
LSB
Offset Error
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
±2
LSB
114
Specifications
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Table 5-6. ADC1 Electrical Parameters (continued)
PARAMETER
Input Capacitance
TEST CONDITIONS
Bypass mode
Gain mode
Differential Input
Impedance(3)
Signal-to-Noise Ratio
(SNR)
Total Harmonic Distortion
(THD)
Spurious Free Dynamic
Range
Signal-to-Noise Plus
Distortion
NOM
UNIT
pF
2
pF
18
kΩ
70
Gain mode
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.2 V
Input Signal: 5 kHz sine wave at
Full Scale
70
Bypass mode
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
75
Gain mode
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.2 V
Input Signal: 5 kHz sine wave at
Full Scale
75
Bypass mode
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
80
Gain mode
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.2 V
Input Signal: 5 kHz sine wave at
Full Scale
80
Bypass mode
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
69
Gain mode
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.2 V
Input Signal: 5 kHz sine wave at
Full Scale
69
f = input frequency
MAX
5.5
Bypass mode
Internal Voltage Reference:
VDDA_ADC1 = 1.8 V
External Voltage Reference:
ADC1_VREFP – ADC1_VREFN
= 1.8 V
Input Signal: 30 kHz sine wave at
–0.5 dB Full Scale
ADC1_VREFP and ADC1_VREFN Input Impedance
Input Impedance of
ADC1_AIN[7:0](4)
MIN
dB
dB
dB
dB
20
kΩ
[1/((65.97 × 10–12) × f)]
Ω
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Table 5-6. ADC1 Electrical Parameters (continued)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
SAMPLING DYNAMICS
ADC Clock Frequency
13
Conversion Time
13
Acquisition Time(5)
Sampling Rate(6)
2
ADC Clock = 13 MHz
MHz
ADC
clock
cycles
257
ADC
clock
cycles
867
kSPS
(1) The ADC1_VREFP and ADC1_VREFN terminals should not be allowed to float to prevent noise from coupling into the ADC. If
ADC1_VREFN is not used to connect an external negative voltage reference to the ADC, connect it to VSSA_ADC. If ADC1_VREFP is
not used to connect an external positive voltage reference to the ADC, connect it to VSSA_ADC or VDDA_ADC1. Connecting
ADC1_VREFP to VSSA_ADC in this use case is the preferred option because VDDA_ADC1 may couple more noise into the ADC than
VSSA_ADC.
(2) If the application using ADC1 requires low distortion when operating in Gain mode, the preamplifier output should be limited to ±1.2 volts
differential. To get the full dynamic range of the ADC for this use case it will be necessary to provide a 0.3 volt reference for
ADC1_VREFN and 1.5 volt reference for ADC1_VREFP.
(3) The differential input impedance of each preamplifier is biased to VDDA_ADC1 divided by 2 with a 22-kΩ to 50-kΩ source. See the AFE
Functional Description section of the device-specific TRM for more information.
(4) This parameter is valid when the respective AIN terminal is configured to operate as a general-purpose ADC input.
(5) The maximum sample rate of ADC1 may be reduced when using the internal preamplifiers because the preamplifier outputs require 600
ns to settle. Sample Delay must be configured to provide a minimum acquisition time of 600 ns when using the preamplifiers.
An increase in acquisition time may reduce the maximum sample rate because the maximum sample rate is based on a minimum
acquisition time of 2 ADC clock cycles.
For example, the minimum Sample Delay value should be 6 when the preamplifiers are being used with a 13-MHz ADC clock. A Sample
Delay of 6 provides an acquisition time of 8 ADC clock cycles, which reduces the maximum single input sample rate to 619 kSPS when
the acquisition time is combined with the conversion time of 13 ADC clock cycles.
(6) The maximum sample rate assumes a conversion time of 13 ADC clock cycles with the acquisition time configured for the minimum of 2
ADC clock cycles, where it takes a total of 15 ADC clock cycles to sample the analog input and convert it to a positive binary weighted
digital value.
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5.10 VPP Specifications for One-Time Programmable (OTP) eFuses
This section specifies the operating conditions required for programming the OTP eFuses and is
applicable only for high-security (AM437xHS) devices.
Table 5-7. Recommended Operating Conditions for OTP eFuse Programming
PARAMETER
VDD_CORE
DESCRIPTION
Supply voltage range for the core domain during OTP
operation; OPP100
MIN
1.056
Supply voltage range for the eFuse ROM domain during
normal operation
VPP
Supply voltage range for the eFuse ROM domain during
OTP programming (1) (2)
NOM
MAX
UNIT
1.1
1.144
V
1.75
V
NC
1.65
1.7
0
30
I(VPP)
Temperature (ambient)
(1)
(2)
50
mA
50
ºC
Supply voltage range includes DC errors and peak-to-peak noise. TI power management solutions TLV70717 from the TLV707x family
meet the supply voltage range needed for VPP.
During normal operation, no voltage should be applied to VPP. This can be typically achieved by disabling the regulator attached to the
VPP terminal. For more details, see TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices.
5.10.1 Hardware Requirements
The following hardware requirements must be met when programming keys in the OTP eFuses:
• The VPP power supply must be disabled when not programming OTP registers.
• The VPP power supply must be ramped up after the proper device power-up sequence (for more
details, see Section 5.13.1.2).
5.10.2 Programming Sequence
Programming sequence for OTP eFuses:
1. Power on the board per the power-up sequencing. No voltage should be applied on the VPP terminal
during power up and normal operation.
2. Load the OTP write software required to program the eFuse (contact your local TI representative for
the OTP software package).
3. Apply the voltage on the VPP terminal according to the specification in Table 5-7.
4. Run the software that programs the OTP registers.
5. After validating the content of the OTP registers, remove the voltage from the VPP terminal.
5.10.3 Impact to Your Hardware Warranty
You recognize and accept at your own risk that your use of eFuse permanently alters the TI device. You
acknowledge that eFuse can fail due to incorrect operating conditions or programming sequence. Such a
failure may render the TI device inoperable and TI will be unable to confirm the TI device conformed to TI
device specifications prior to the attempted eFuse. CONSEQUENTLY, TI WILL HAVE NO LIABILITY FOR
ANY TI DEVICES THAT HAVE BEEN eFUSED.
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5.11 Thermal Resistance Characteristics
Failure to maintain a junction temperature within the range specified in Section 5.5 reduces operating
lifetime, reliability, and performance—and may cause irreversible damage to the system. Therefore, the
product design cycle should include thermal analysis to verify the maximum operating junction
temperature of the device. It is important this thermal analysis is performed using specific system use
cases and conditions. TI provides an application report to aid users in overcoming some of the existing
challenges of producing a good thermal design. For more information, see AM43xx Thermal
Considerations.
Table 5-8 provides thermal characteristics for the packages used on this device.
NOTE
This table provides simulation data and may not represent actual use-case values.
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Table 5-8. Thermal Resistance Characteristics (NFBGA Package) [ZDN]
over operating free-air temperature range (unless otherwise noted)
ZDN
(°C/W) (1)
AIR FLOW
(m/s) (1) (3)
NAME
DESCRIPTION
RΘJC
Junction-to-case
7.07
NA
RΘJB
Junction-to-board
11.11
NA
23.0
0.0
19.5
0.5
18.5
1.0
17.5
2.0
16.9
3.0
2.10
0.0
2.16
0.5
2.20
1.0
2.27
2.0
2.31
3.0
11.59
0.0
11.18
0.5
11.05
1.0
10.91
2.0
10.80
3.0
RΘJA
PsiJT
PsiJB
(1)
(2)
(3)
Junction-to-free air
Junction-to-package top
Junction-to-board
(2)
These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a
JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these
EIA/JEDEC standards:
• JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
• JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
• JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.
°C/W = degrees Celsius per watt.
m/s = meters per second.
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5.12 External Capacitors
To improve module performance, decoupling capacitors are required to suppress the switching noise
generated by high frequency and to stabilize the supply voltage. A decoupling capacitor is most effective
when it is close to the device, because this minimizes the inductance of the circuit board wiring and
interconnects.
5.12.1 Voltage Decoupling Capacitors
Table 5-9 summarizes the Core voltage decoupling characteristics.
5.12.1.1 Core Voltage Decoupling Capacitors
To improve module performance, decoupling capacitors are required to suppress high-frequency switching
noise and to stabilize the supply voltage. A decoupling capacitor is most effective when located close to
the device, because this minimizes the inductance of the circuit board wiring and interconnects.
Table 5-9. Core Voltage Decoupling Characteristics
TYP
UNIT
CVDD_CORE(1)
PARAMETER
10.08
μF
CVDD_MPU(2)
10.05
μF
(1) The typical value corresponds to 1 capacitor of 10 μF and 8 capacitors of 10 nF.
(2) The typical value corresponds to 1 capacitor of 10 μF and 5 capacitors of 10 nF.
5.12.1.2 IO and Analog Voltage Decoupling Capacitors
Table 5-10 summarizes the power-supply decoupling capacitor recommendations.
Table 5-10. Power-Supply Decoupling Capacitor Characteristics
PARAMETER
TYP
UNIT
CVDDA_ADC0
10
nF
CVDDA_ADC1
10
nF
CVDDA1P8V_USB0(1)
2.21
µF
CCVDDA3P3V_USB0
10
nF
CVDDA1P8V_USB1
10
nF
CVDDA3P3V_USB1
10
nF
10.04
μF
CVDDS(2)
CVDDS_DDR
(3)
CVDDS_OSC
10
nF
CVDDS_PLL_DDR
10
nF
CVDDS_PLL_CORE_LCD
10
nF
CVDDS_SRAM_CORE_BG(4)
10.01
µF
CVDDS_SRAM_MPU_BB(5)
10.01
µF
CVDDS_PLL_MPU
10
nF
CVDDS_RTC
10
nF
CVDDS_CLKOUT
10
nF
CVDDS3P3V_IOLDO
10
nF
(6)
10.02
μF
CVDDSHV2(7)
10.06
μF
CVDDSHV3(7)
10.06
μF
(6)
10.02
μF
CVDDSHV6(7)
10.06
μF
CVDDSHV7(6)
10.02
μF
CVDDSHV1
CVDDSHV5
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Table 5-10. Power-Supply Decoupling Capacitor Characteristics (continued)
TYP
UNIT
CVDDSHV8(6)
PARAMETER
10.02
μF
(6)
10.02
μF
CVDDSHV10(6)
10.02
μF
CVDDSHV11(6)
10.02
μF
CVDDSHV9
(1) Typical values consist of 1 capacitor of 10 μF and 4 capacitors of 10 nF.
(2) Typical values consist of 1 capacitor of 2.2 μF and 1 capacitor of 10 nF.
(3) For more details on decoupling capacitor requirements for the DDR3 and DDR3L memory interface, see Section 5.13.8.2.1.3.6 and
Section 5.13.8.2.1.3.7 when using DDR3 and DDR3L memory devices.
(4) VDDS_SRAM_CORE_BG supply powers an internal LDO for SRAM supplies. Inrush currents could cause voltage drop on the
VDDS_SRAM_CORE_BG supplies when the SRAM LDO is enabled after powering up VDDS_SRAM_CORE_BG terminals. TI
recommends placing a 10-μF capacitor close to the terminal and routing it with the widest traces possible to minimize the voltage drop
on VDDS_SRAM_CORE_BG terminals.
(5) VDDS_SRAM_MPU_BB supply powers an internal LDO for SRAM supplies. Inrush currents could cause voltage drop on the
VDDS_SRAM_MPU_BB supplies when the SRAM LDO is enabled after powering up VDDS_SRAM_MPU_BB terminals. TI
recommends placing a 10-μF capacitor close to the terminal and routing it with the widest traces possible to minimize the voltage drop
on VDDS_SRAM_MPU_BB terminals.
(6) Typical values consist of 1 capacitor of 10 μF and 2 capacitors of 10 nF.
(7) Typical values consist of 1 capacitor of 10 μF and 6 capacitors of 10 nF.
5.12.2 Output Capacitors
Internal low dropout output (LDO) regulators require external capacitors to stabilize their outputs. These
capacitors should be placed as close as possible to the respective terminals of the device. Table 5-11
summarizes the LDO output capacitor recommendations.
Table 5-11. Output Capacitor Characteristics
PARAMETER
CCAP_VDD_SRAM_CORE (1)
(1) (2)
TYP
UNIT
1
μF
1
μF
CCAP_VDD_SRAM_MPU (1)
1
μF
CCAP_VBB_MPU (1)
1
μF
2.2
μF
CCAP_VDD_RTC
CCAP_VDDS1P8V_IOLDO
(1)
(2)
(3)
(1) (3)
LDO regulator outputs should not be used as a power source for any external components.
The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the RTC_KALDO_ENn terminal is high.
The CAP_VDDS1P8V_IOLDO terminal is the output of the IO LDO and required for simplified power sequencing. For more details, see
Figure 5-8. If simplified power sequencing is not used, this terminal can be left floating.
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Figure 5-2 shows an example of the external capacitors.
Device
VDDS_PLL_MPU
MPU
PLL
VDD_MPU
CVDDS_PLL_MPU
EXTDEV
PLL
MPU
CVDD_MPU
VDDS_PLL_CORE_LCD
CORE
PLL
VDD_CORE
CORE
CVDDS_PLL_CORE_LCD
LCD
PLL
CAP_VBB_MPU
CVDD_CORE
CCAP_VBB_MPU
CVDDS
CVDDSHV1
VDDS
IO
VDDS_SRAM_MPU_BB
CVDDS_SRAM_MPU_BB
VDDSHV1
IOs
MPU SRAM
LDO
Back Bias
LDO
CVDDSHV2
CAP_VDD_SRAM_MPU
CCAP_VDD_SRAM_MPU
VDDSHV2
IOs
VDDS_SRAM_CORE_BG
CVDDSHV3
VDDSHV3
IOs
CVDDS_SRAM_CORE_BG
CORE SRAM
LDO
Band Gap
Reference
CVDDSHV5
CAP_VDD_SRAM_CORE
VDDSHV5
IOs
CCAP_VDD_SRAM_CORE
VDDA_3P3V_USB0
CVDDSHV6
VDDSHV6
IOs
CVDDA_3P3V_USB0
VSSA_USB
USBPHY0
CVDDSHV7
VDDSHV7
IOs
VDDA_1P8V_USB0
PER PLL
CVDDA_1P8V_USB0
VSSA_USB
CVDDSHV8
VDDSHV8
IOs
VDDA_3P3V_USB1
CVDDA_3P3V_USB1
CVDDSHV9
VDDSHV9
IOs
VSSA_USB
USBPHY1
VDDA_1P8V_USB1
CVDDA_1P8V_USB1
CVDDSHV10
VDDSHV10
IOs
VSSA_USB
VDDA_ADC0
CVDDSHV11
VDDSHV11
IOs
CVDDA_ADC0
ADC0
VSSA_ADC
CVDDS_DDR
VDDA_ADC1
VDDS_DDR
IOs
CVDDA_ADC1
ADC1
VSSA_ADC
VDDS_RTC
IOs
CVDDS_RTC
VDDS_OSC
CVDDS_OSC
VDDS_PLL_DDR
CVDDS_PLL_DDR
DDR
PLL
CAP_VDD_RTC
RTC
CCAP_VDD_RTC
VDDS3P3V_
IOLDO
A.
B.
CAP_VDDS1P8V_IOLDO
Decoupling capacitors must be placed as closed as possible to the power terminal. Choose the ground closest to the
power pin for each decoupling capacitor. In case of interconnecting powers, first insert the decoupling capacitor and
then interconnect the powers.
The decoupling capacitor value depends on the board characteristics.
Figure 5-2. External Capacitors
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5.13 Timing and Switching Characteristics
The data provided in the following timing requirements and switching characteristics tables assumes the
device is operating within the recommended operating conditions defined in Section 5.5, unless otherwise
noted.
5.13.1 Power Supply Sequencing
5.13.1.1 Power Supply Slew Rate Requirement
To maintain the safe operating range of the internal ESD protection devices, TI recommends limiting the
maximum slew rate of supplies to be less than 1.0E + 5 V/s. For instance, as shown in Figure 5-3, TI
recommends having the supply ramp slew for a 1.8-V supply of more than 18 µs.
Supply value
t
slew rate < 1E + 5 V/s
slew > (supply value) / (1E + 5V/s)
supply value ´ 10 µs
0
Figure 5-3. Power Supply Slew and Slew Rate
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5.13.1.2 Power-Up Sequencing
1.8V
(A)
VDDS_RTC
1.8V
RTC_PWRONRSTn
(B)
1.8V
RTC_PMIC_EN
1.8V
VDDS,
VDDS_CLKOUT
1.8V
VDDS_OSC, VDDA_ADC0/1, VDDS_PLL_DDR,
VDDS_PLL_CORE_LCD, VDDS_PLL_MPU,
VDDS_SRAM_MPU_BB,
VDDS_SRAM_CORE_BG, VDDA1P8V_USB0/1
(C)
1.2V/1.35V/1.5V
VDDS_DDR
3.3V
VDDSHVx [x=1-11]
VDDA3P3V_USB0/1
1.1V
VDD_CORE
(D)
1.1V
VDD_MPU
(D)
CLK_32K_RTC
CLK_M_OSC
1.8V/3.3V
(E)
(F)
PWRONRSTn
A.
B.
C.
D.
E.
F.
The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the internal RTC LDO is
disabled by connecting the RTC_KALDO_ENn terminal to VDDS_RTC.
If the internal RTC LDO is disabled, CAP_VDD_RTC should be sourced from an external 1.1-V power supply. If
CAP_VDD_RTC is ramped after VDD_CORE, there might be a small amount of additional leakage current on
VDD_CORE.
VDDS_RTC can be ramped independent of other supplies if RTC_PMIC_EN functionality is not required. If
VDDS_RTC is ramped after VDD_CORE when internal RTC LDO is enabled, there might be a small amount of
leakage current on VDD_CORE.
RTC_PWRONRSTn should be asserted for at least 1 ms and can be released before the 32-kHz clock is stable.
These supplies can be ramped together with VDDS, VDDS_CLKOUT supplies if powered from the same source only.
If a USB port is not used, the respective VDDA1P8V_USB may be connected to any 1.8-V power supply and the
respective VDDA3P3V_USB terminal may be connected to any 3.3-V power supply. If a system does not have a 3.3V supply, the VDDA3P3V_USB may be connected to ground.
VDD_MPU and VDD_CORE can be supplied from the same power source if OPPs higher than OPP100 are not used.
PWRONRSTn input voltage thresholds are not dependent on VDDSHV3 voltage and the terminal is not fail-safe.
PWRONRSTn can accept 1.8-V or 3.3-V input levels when VDDSHV3 is configured as 3.3 V. However,
PWRONRSTn can only accept 1.8 V input levels when VDDSHV3 is configured as 1.8 V. For details on this input
terminal, see Section 5.7.
It is required to hold the PWRONRSTn terminal low until all the supplies have ramped and the input clock
CLK_M_OSC is stable.
Figure 5-4. Power Sequencing With RTC Feature Enabled, All Dual-Voltage IOs Configured as 3.3 V
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1.8V
(A)
VDDS_RTC
RTC_PWRONRSTn
1.8V
(B)
1.8V
RTC_PMIC_EN
1.8V
VDDS, VDDSHVx [x=1-11]
VDDS_CLKOUT
1.8V
VDDS_OSC, VDDA_ADC0/1, VDDS_PLL_DDR,
VDDS_PLL_CORE_LCD, VDDS_PLL_MPU,
VDDS_SRAM_MPU_BB,
VDDS_SRAM_CORE_BG, VDDA1P8V_USB0/1
(C)
1.2V/1.35V/1.5V
VDDS_DDR
3.3V
VDDA3P3V_USB0/1
1.1V
VDD_CORE
(D)
1.1V
VDD_MPU
(D)
CLK_32K_RTC
CLK_M_OSC
1.8V
(E)
PWRONRSTn
A.
B.
C.
D.
E.
The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the internal RTC LDO is
disabled by connecting the RTC_KALDO_ENn terminal to VDDS_RTC.
If the internal RTC LDO is disabled, CAP_VDD_RTC should be sourced from an external 1.1-V power supply. If
CAP_VDD_RTC is ramped after VDD_CORE, there might be a small amount of additional leakage current on
VDD_CORE.
RTC_PWRONRSTn should be asserted for at least 1 ms and can be released before the 32-kHz clock is stable.
These supplies can be ramped together with the VDDS, VDDSHVx [x=1-11], VDDS_CLKOUT supplies if powered
from the same source.
If a USB port is not used, the respective VDDA1P8V_USB may be connected to any 1.8-V power supply and the
respective VDDA3P3V_USB terminal may be connected to any 3.3-V power supply. If a system does not have a 3.3V supply, the VDDA3P3V_USB may be connected to ground.
VDD_MPU and VDD_CORE can be supplied from the same power source if OPPs higher than OPP100 are not used.
It is required to hold the PWRONRSTn terminal low until all the supplies have ramped and the input clock
CLK_M_OSC is stable.
Figure 5-5. Power Sequencing With RTC Feature Enabled, All Dual-Voltage IOs Configured as 1.8 V
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1.8V
(A)
VDDS_RTC
1.8V
RTC_PWRONRSTn
(B)
1.8V
RTC_PMIC_EN
1.8V
VDDS,
VDDS_CLKOUT
VDDSHVx [x=1-11]
1.8V
VDDS_OSC, VDDA_ADC0/1, VDDS_PLL_DDR,
VDDS_PLL_CORE_LCD, VDDS_PLL_MPU,
VDDS_SRAM_MPU_BB,
(C)
VDDS_SRAM_CORE_BG, VDDA1P8V_USB0/1
1.2V/1.35V/1.5V
VDDS_DDR
3.3V
VDDSHVx [x=1-11]
VDDA3P3V_USB0/1
1.1V
VDD_CORE
(D)
1.1V
VDD_MPU
(D)
CLK_32K_RTC
CLK_M_OSC
1.8V/3.3V
(E)
(F)
PWRONRSTn
A.
B.
C.
D.
E.
F.
The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the internal RTC LDO is
disabled by connecting the RTC_KALDO_ENn terminal to VDDS_RTC.
If the internal RTC LDO is disabled, CAP_VDD_RTC should be sourced from an external 1.1-V power supply. If
CAP_VDD_RTC is ramped after VDD_CORE, there might be a small amount of additional leakage current on
VDD_CORE.
RTC_PWRONRSTn should be asserted for at least 1 ms and can be released before the 32-kHz clock is stable.
These supplies can be ramped together with the VDDS, VDDSHVx [x=1-11], VDDS_CLKOUT supplies if powered
from the same source.
If a USB port is not used, the respective VDDA1P8V_USB may be connected to any 1.8-V power supply and the
respective VDDA3P3V_USB terminal may be connected to any 3.3-V power supply. If a system does not have a 3.3V supply, the VDDA3P3V_USB may be connected to ground.
VDD_MPU and VDD_CORE can be supplied from the same power source if OPPs higher than OPP100 are not used.
PWRONRSTn input voltage thresholds are not dependent on VDDSHV3 voltage and the terminal is not fail-safe.
PWRONRSTn can accept 1.8-V or 3.3-V input levels when VDDSHV3 is configured as 3.3 V. However,
PWRONRSTn can only accept 1.8 V input levels when VDDSHV3 is configured as 1.8 V. For details on this input
terminal, see Section 5.7.
It is required to hold the PWRONRSTn terminal low until all the supplies have ramped and the input clock
CLK_M_OSC is stable.
Figure 5-6. Power Sequencing With RTC Feature Enabled, Dual-Voltage IOs Configured as 1.8 V, 3.3 V
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1.8V
VDDS,
VDDS_CLKOUT
VDDSHVx [x=1-11]
1.8V
VDDS_RTC, VDDS_OSC, VDDA_ADC0/1,
VDDS_PLL_DDR, VDDS_PLL_CORE_LCD,
VDDS_PLL_MPU, VDDS_SRAM_MPU_BB,
VDDS_SRAM_CORE_BG, VDDA1P8V_USB0/1
(A)
1.2V/1.35V/1.5V
VDDS_DDR
3.3V
VDDSHVx [x=1-11]
VDDA3P3V_USB0/1
1.1V
VDD_CORE
(B)
CAP_VDD_RTC
,
(C)
1.1V
VDD_MPU
(B)
CLK_M_OSC
1.8V/3.3V
(D)
(E)
PWRONRSTn
A.
B.
C.
D.
E.
These supplies can be ramped together with the VDDS, VDDSHVx [x=1-11], VDDS_CLKOUT supplies if powered
from the same source.
If a USB port is not used, the repsective VDDA1P8V_USB may be connected to any 1.8-V power supply and the
respective VDDA3P3V_USB terminal may be connected to any 3.3-V power supply. If a system does not have a 3.3V supply, the VDDA3P3V_USB may be connected to ground.
VDD_MPU and VDD_CORE can be supplied from the same power source if OPPs higher than OPP100 are not used.
The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the internal RTC LDO is
disabled by connecting the RTC_KALDO_ENn terminal to VDDS_RTC.
If the internal RTC LDO is disabled, CAP_VDD_RTC should be sourced from an external 1.1-V power supply. If
CAP_VDD_RTC is ramped after VDD_CORE, there might be a small amount of additional leakage current on
VDD_CORE.
VDDS_RTC can be ramped independent of other supplies if RTC_PMIC_EN functionality is not required. If
VDDS_RTC is ramped after VDD_CORE when internal RTC LDO is enabled, there might be a small amount of
leakage current on VDD_CORE.
PWRONRSTn input voltage thresholds are not dependent on VDDSHV3 voltage and the terminal is not fail-safe.
PWRONRSTn can accept 1.8-V or 3.3-V input levels when VDDSHV3 is configured as 3.3 V. However,
PWRONRSTn can only accept 1.8 V input levels when VDDSHV3 is configured as 1.8 V. For details on this input
terminal, see Section 5.7.
It is required to hold the PWRONRSTn terminal low until all the supplies have ramped and the input clock
CLK_M_OSC is stable.
Figure 5-7. Power Sequencing With RTC Feature Disabled, Dual-Voltage IOs Configured as 1.8 V, 3.3 V
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3.3V
VDDS3P3V_IOLDO,
VDDSHVx [x=1-11]
VDDA3P3V_USB0/1
(A)
1.8V
VDDS_RTC, VDDS_OSC, VDDA_ADC0/1,
VDDS_PLL_DDR, VDDS_PLL_CORE_LCD,
VDDS_PLL_MPU, VDDS_SRAM_MPU_BB,
VDDS_SRAM_CORE_BG, VDDA1P8V_USB0/1
(B)
1.2V/1.35V/1.5V
VDDS_DDR
1.1V
VDD_CORE
CAP_VDD_RTC
(C)
(D)
1.1V
VDD_MPU
(C)
CLK_M_OSC
1.8V/3.3V
(E)
(F)
PWRONRSTn
A.
B.
C.
D.
E.
F.
Power source supplying VDDS3P3V_IOLDO should have a supply slew of >100us.
CAP_VDDS1P8V_IOLDO is the 1.8-V output of VDDA3P3V_IOLDO. VDDS, VDDS_CLKOUT terminals are powered
by shorting them to CAP_VDDS1P8V_IOLDO on the board.
If a USB port is not used, the repsective VDDA1P8V_USB may be connected to any 1.8-V power supply and the
respective VDDA3P3V_USB terminal may be connected to any 3.3-V power supply. If a system does not have a 3.3V supply, the VDDA3P3V_USB may be connected to ground.
VDD_MPU and VDD_CORE can be supplied from the same power source if OPPs higher than OPP100 are not used.
The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the internal RTC LDO is
disabled by connecting the RTC_KALDO_ENn terminal to VDDS_RTC.
If the internal RTC LDO is disabled, CAP_VDD_RTC should be sourced from an external 1.1-V power supply. If
CAP_VDD_RTC is ramped after VDD_CORE, there might be a small amount of additional leakage current on
VDD_CORE.
VDDS_RTC can be ramped independent of other supplies if RTC_PMIC_EN functionality is not required. If
VDDS_RTC is ramped after VDD_CORE when internal RTC LDO is enabled, there might be a small amount of
leakage current on VDD_CORE.
PWRONRSTn input voltage thresholds are not dependent on VDDSHV3 voltage and the terminal is not fail-safe.
PWRONRSTn can accept 1.8-V or 3.3-V input levels when VDDSHV3 is configured as 3.3 V. However,
PWRONRSTn can only accept 1.8 V input levels when VDDSHV3 is configured as 1.8 V. For details on this input
terminal, see Section 5.7.
The PWRONRSTn terminal must be held low until all the supplies have ramped and the input clock CLK_M_OSC is
stable.
Figure 5-8. Simplified Power Sequencing With RTC Feature Disabled, Dual-Voltage IOs
Configured as 3.3 V
128
Specifications
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5.13.1.3 Power-Down Sequencing
PWRONRSTn input terminal should be taken low, which stops all internal clocks before power supplies
are turned off. All other external clocks to the device should be shut off.
The preferred way to sequence power down is to have all the power supplies ramped down sequentially in
the exact reverse order of the power-up sequencing. In other words, the power supply that has been
ramped up first should be the last one that is ramped down. This ensures there would be no spurious
current paths during the power-down sequence. The VDDS, VDDS_CLKOUT power supply must ramp
down after all 3.3-V VDDSHVx [x=1-11] power supplies.
If it is desired to ramp down VDDS, VDDS_CLKOUT and VDDSHVx [x=1-11] simultaneously, it should
always be ensured that the difference between VDDS, VDDS_CLKOUT and VDDSHVx [x=1-11] during
the entire power-down sequence is <2 V. Any violation of this could cause reliability risks for the device.
Further, it is recommended to maintain VDDS, VDDS_CLKOUT ≥1.5V as all the other supplies fully ramp
down to minimize in-rush currents.
If none of the VDDSHVx [x=1-11] power supplies are configured as 3.3 V, the VDDS, VDDS_CLKOUT
power supply may ramp down along with the VDDSHVx [x=1-11] supplies or after all the VDDSHVx [x=111] supplies have ramped down. TI recommends maintaining VDDS, VDDS_CLKOUT ≥1.5V as all the
other supplies fully ramp down to minimize in-rush currents.
When using simplified power-down sequence, there are no power-down requirements between the VDDS,
VDDS_CLKOUT and VDDSHVx [x=1-11] supplies and are ramped down together without any reliability
concerns.
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5.13.2 Clock
5.13.2.1 PLLs
5.13.2.1.1 Digital Phase-Locked Loop Power Supply Requirements
The digital phase-locked loop (DPLL) provides all interface clocks and functional clocks to the processor
of the device. The device integrates six different DPLLs:
• Core DPLL
• Per DPLL
• Display DPLL
• DDR DPLL
• MPU DPLL
• EXTDEV DPLL
Figure 5-9 shows the power supply connectivity implemented in the device. Table 5-12 provides the power
supply requirements for the DPLL.
MPU
PLL
PER
PLL
VDDS_PLL_MPU
VDDA1P8V_USB0
CORE
PLL
DDR
PLL
VDDS_PLL_DDR
EXTDEV
PLL
VDDS_PLL_CORE_LCD
LCD
PLL
Figure 5-9. DPLL Power Supply Connectivity
Table 5-12. DPLL Power Supply Requirements
SUPPLY NAME
DESCRIPTION
MIN NOM
MAX
UNIT
VDDA1P8V_USB0
Supply voltage range for USBPHY and PER DPLL, Analog, 1.8V
1.71
1.8
1.89
V
1.71
1.8
1.89
Max. peak-to-peak supply noise
VDDS_PLL_MPU
50 mV (p-p)
Supply voltage range for DPLL MPU, Analog
Max. peak-to-peak supply noise
VDDS_PLL_CORE_LCD
Supply voltage range for DPLL CORE, EXTDEV, and LCD, Analog
1.71
1.8
Max. peak-to-peak supply noise
VDDS_PLL_DDR
Specifications
1.89
V
50 mV (p-p)
Supply voltage range for DPLL DDR, Analog
1.71
Max. peak-to-peak supply noise
130
V
50 mV (p-p)
1.8
1.89
V
50 mV (p-p)
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5.13.2.2 Input Clock Specifications
The device has two clock inputs. Each clock input passes through an internal oscillator which can be
connected to an external crystal circuit (oscillator mode) or external LVCMOS square-wave digital clock
source (bypass mode). The oscillators automatically operate in bypass mode when their input is
connected to an external LVCMOS square-wave digital clock source. The oscillator associated with a
specific clock input must be enabled when the clock input is being used in either oscillator mode or bypass
mode.
The OSC1 oscillator provides a 32.768-kHz reference clock to the real-time clock (RTC) and is connected
to the RTC_XTALIN and RTC_XTALOUT terminals. This clock source is referred to as the 32K oscillator
(CLK_32K_RTC) in the device-specific technical reference manual. OSC1 is disabled by default after
power is applied. This clock input is optional and may not be required if the RTC is configured to receive a
clock from the internal 32k RC oscillator (CLK_RC32K) or peripheral PLL (CLK_32KHZ) which receives a
reference clock from the OSC0 input.
The OSC0 oscillator provides a 19.2-MHz, 24-MHz, 25-MHz, or 26-MHz reference clock which is used to
clock all non-RTC functions and is connected to the XTALIN and XTALOUT terminals. This clock source is
referred to as the master oscillator (CLK_M_OSC) in the device-specific technical reference manual.
OSC0 is enabled by default after power is applied.
For more information related to recommended circuit topologies and crystal oscillator circuit requirements
for these clock inputs, see Section 5.13.2.3.
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5.13.2.3 Input Clock Requirements
5.13.2.3.1 OSC0 Internal Oscillator Clock Source
Figure 5-10 shows the recommended crystal circuit. It is recommended that preproduction printed-circuit
board (PCB) designs include the two optional resistors Rbias and Rd in case they are required for proper
oscillator operation when combined with production crystal circuit components. In most cases, Rbias is not
required and Rd is a 0-Ω resistor. These resistors may be removed from production PCB designs after
evaluating oscillator performance with production crystal circuit components installed on preproduction
PCBs.
The XTALIN terminal has a 15-kΩ to 40-kΩ internal pulldown resistor which is enabled when OSC0 is
disabled. This internal resistor prevents the XTALIN terminal from floating to an invalid logic level which
may increase leakage current through the oscillator input buffer.
Device
VSS_OSC
XTALIN
XTALOUT
C1
C2
Crystal
Optional Rd
Optional Rbias
Copyright © 2016, Texas Instruments Incorporated
A.
B.
Oscillator components (Crystal, C1, C2, optional Rbias and Rd) must be located close to the package. Parasitic
capacitance to the printed circuit board (PCB) ground and other signals should be minimized to reduce noise coupled
into the oscillator. The external crystal component grounds should be connected to the VSS_OSC terminal. The
VSS_OSC terminal should be connected to the PCB ground plane as close as possible to the device.
C1 and C2 represent the total capacitance of the respective PCB trace, load capacitor, and other components
(excluding the crystal) connected to each crystal terminal. The value of capacitors C1 and C2 should be selected to
provide the total load capacitance, CL, specified by the crystal manufacturer. The total load capacitance is CL =
[(C1×C2)/(C1+C2)] + Cshunt, where Cshunt is the crystal shunt capacitance (C0) specified by the crystal manufacturer
plus any mutual capacitance (Cpkg + CPCB) seen across the XTALIN and XTALOUT signals. For recommended values
of crystal circuit components, see Table 5-13.
Figure 5-10. OSC0 Crystal Circuit Schematic
132
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Table 5-13. OSC0 Crystal Circuit Requirements
NAME
DESCRIPTION
MIN
Crystal parallel resonance
frequency
Fundamental mode oscillation only
fxtal
Crystal frequency stability
and tolerance
TYP
MAX
19.2, 24.0,
25.0, or
26.0
UNIT
MHz
–50.0
50.0
ppm
CC1
C1 capacitance
12.0
24.0
pF
CC2
C2 capacitance
12.0
24.0
pF
Cshunt
Shunt capacitance
5.0
pF
Crystal effective series
resistance
ESR
fxtal = 19.2 MHz, oscillator has nominal
negative resistance of 272 Ω and worstcase negative resistance of 163 Ω
54.4
fxtal = 24.0 MHz, oscillator has nominal
negative resistance of 240 Ω and worstcase negative resistance of 144 Ω
48.0
fxtal = 25.0 MHz, oscillator has nominal
negative resistance of 233 Ω and worstcase negative resistance of 140 Ω
46.6
fxtal = 26.0 MHz, oscillator has nominal
negative resistance of 227 Ω and worstcase negative resistance of 137 Ω
45.3
Ω
Table 5-14. OSC0 Crystal Circuit Characteristics
NAME
DESCRIPTION
Cpkg
Shunt capacitance of
package
MIN
Pxtal
The actual values of the ESR, fxtal, and CL should be used to yield a
typical crystal power dissipation value. Using the maximum values
specified for ESR, fxtal, and CL parameters yields a maximum power
dissipation value.
tsX
Start-up time
ZDN package
TYP
MAX
0.01
pF
Pxtal = 0.5 ESR (2 π fxtal
CL VDDS_OSC)2
1.5
VDD_CORE (min.)
UNIT
ms
VDD_CORE
Voltage
VSS
VDDS_OSC (min.)
VDDS_OSC
XTALOUT
VSS
tsX
Time
Figure 5-11. OSC0 Start-up Time
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5.13.2.3.2 OSC0 LVCMOS Digital Clock Source
Figure 5-12 shows the recommended oscillator connections when OSC0 is connected to an LVCMOS
square-wave digital clock source. The LVCMOS clock source is connected to the XTALIN terminal. In this
mode of operation, the XTALOUT terminal should not be used to source any external components. The
printed circuit board design should provide a mechanism to disconnect the XTALOUT terminal from any
external components or signal traces that may couple noise into OSC0 via the XTALOUT terminal.
The XTALIN terminal has a 15-kΩ to 40-kΩ internal pulldown resistor which is enabled when OSC0 is
disabled. This internal resistor prevents the XTALIN terminal from floating to an invalid logic level which
may increase leakage current through the oscillator input buffer.
Device
XTALIN
VSS_OSC
XTALOUT
VDDS_OSC
LVCMOS
Digital
Clock
Source
Copyright © 2016, Texas Instruments Incorporated
Figure 5-12. OSC0 LVCMOS Circuit Schematic
Table 5-15. OSC0 LVCMOS Reference Clock Requirements
NAME
f(XTALIN)
DESCRIPTION
MIN
TYP
MAX
19.2, 24, 25,
or 26
Frequency, LVCMOS reference clock
Frequency, LVCMOS reference clock stability and tolerance (1)
UNIT
MHz
–50
50
tdc(XTALIN)
Duty cycle, LVCMOS reference clock period
45%
55%
tjpp(XTALIN)
Jitter peak-to-peak, LVCMOS reference clock period
–1%
1%
tR(XTALIN)
Time, LVCMOS reference clock rise
5
ns
tF(XTALIN)
Time, LVCMOS reference clock fall
5
ns
(1)
134
ppm
Initial accuracy, temperature drift, and aging effects should be combined when evaluating a reference clock for this requirement.
Specifications
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5.13.2.3.3 OSC1 Internal Oscillator Clock Source
Figure 5-13 shows the recommended crystal circuit for OSC1 of the package. It is recommended that preproduction printed circuit board (PCB) designs include the two optional resistors Rbias and Rd in case they
are required for proper oscillator operation when combined with production crystal circuit components. In
most cases, Rbias is not required and Rd is a 0-Ω resistor. These resistors may be removed from
production PCB designs after evaluating oscillator performance with production crystal circuit components
installed on preproduction PCBs.
The RTC_XTALIN terminal has a 10-kΩ to 40-kΩ internal pullup resistor which is enabled when OSC1 is
disabled. This internal resistor prevents the RTC_XTALIN terminal from floating to an invalid logic level
which may increase leakage current through the oscillator input buffer.
Device
RTC_XTALIN
VSS_RTC
RTC_XTALOUT
Optional Rbias
Optional Rd
Crystal
C1
C2
Copyright © 2016, Texas Instruments Incorporated
A.
B.
Oscillator components (Crystal, C1, C2, optional Rbias and Rd) must be located close to the package. Parasitic
capacitance to the printed circuit board (PCB) ground and other signals should be minimized to reduce noise coupled
into the oscillator.
C1 and C2 represent the total capacitance of the respective PCB trace, load capacitor, and other components
(excluding the crystal) connected to each crystal terminal. The value of capacitors C1 and C2 should be selected to
provide the total load capacitance, CL, specified by the crystal manufacturer. The total load capacitance is CL =
[(C1×C2)/(C1+C2)] + Cshunt, where Cshunt is the crystal shunt capacitance (C0) specified by the crystal manufacturer
plus any mutual capacitance (Cpkg + CPCB) seen across the RTC_XTALIN and RTC_XTALOUT signals. For
recommended values of crystal circuit components, see Table 5-16.
Figure 5-13. OSC1 Crystal Circuit Schematic
Table 5-16. OSC1 Crystal Circuit Requirements
NAME
fxtal
DESCRIPTION
MIN
TYP
MAX
Crystal parallel resonance
frequency
Fundamental mode oscillation only
32.768
Crystal frequency stability
and tolerance
Maximum RTC error = 10.512 minutes
per year
–20.0
20.0
Maximum RTC error = 26.28 minutes per
year
–50.0
50.0
UNIT
kHz
ppm
ppm
CC1
C1 capacitance
12.0
24.0
pF
CC2
C2 capacitance
12.0
24.0
pF
Cshunt
Shunt capacitance
1.5
pF
ESR
Crystal effective series
resistance
fxtal = 32.768 kHz, oscillator has nominal
negative resistance of 725 kΩ and worstcase negative resistance of 250 kΩ
80
kΩ
Table 5-17. OSC1 Crystal Circuit Characteristics
NAME
DESCRIPTION
Cpkg
Shunt capacitance of
package
MIN
ZDN package
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TYP
MAX
0.17
UNIT
pF
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Table 5-17. OSC1 Crystal Circuit Characteristics (continued)
NAME
DESCRIPTION
Pxtal
The actual values of the ESR, fxtal, and CL should be used to yield a
typical crystal power dissipation value. Using the maximum values
specified for ESR, fxtal, and CL parameters yields a maximum power
dissipation value.
MIN
tsX
Start-up time
TYP
2
CAP_VDD_RTC (min.)
MAX
UNIT
Pxtal = 0.5 ESR (2 π fxtal
CL VDDS_RTC)2
s
CAP_VDD_RTC
Voltage
VSS_RTC
VDDS_RTC (min.)
VSS_RTC
VDDS_RTC
RTC_XTALOUT
tsX
Time
Figure 5-14. OSC1 Start-up Time
136
Specifications
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5.13.2.3.4 OSC1 LVCMOS Digital Clock Source
Figure 5-15 shows the recommended oscillator connections when OSC1 of the package is connected to
an LVCMOS square-wave digital clock source. The LVCMOS clock source is connected to the
RTC_XTALIN terminal. In this mode of operation, the RTC_XTALOUT terminal should not be used to
source any external components. The printed circuit board design should provide a mechanism to
disconnect the RTC_XTALOUT terminal from any external components or signal traces that may couple
noise into OSC1 via the RTC_XTALOUT terminal.
The RTC_XTALIN terminal has a 10-kΩ to 40-kΩ internal pullup resistor which is enabled when OSC1 is
disabled. This internal resistor prevents the RTC_XTALIN terminal from floating to an invalid logic level
which may increase leakage current through the oscillator input buffer.
Device
RTC_XTALIN
VSS_RTC
RTC_XTALOUT
VDDS_RTC
LVCMOS
Digital
Clock
Source
N/C
Copyright © 2016, Texas Instruments Incorporated
Figure 5-15. OSC1 LVCMOS Circuit Schematic
Table 5-18. OSC1 LVCMOS Reference Clock Requirements
NAME
DESCRIPTION
MIN
Frequency, LVCMOS reference clock
f(RTC_XTALIN)
Frequency, LVCMOS reference clock
stability and tolerance (1)
TYP
MAX
32.768
UNIT
kHz
Maximum RTC error =
10.512 minutes/year
–20
20
ppm
Maximum RTC error = 26.28
minutes/year
–50
50
ppm
tdc(RTC_XTALIN)
Duty cycle, LVCMOS reference clock period
45%
55%
tjpp(RTC_XTALIN)
Jitter peak-to-peak, LVCMOS reference clock period
–1%
1%
tR(RTC_XTALIN)
Time, LVCMOS reference clock rise
5
ns
tF(RTC_XTALIN)
Time, LVCMOS reference clock fall
5
ns
(1)
Initial accuracy, temperature drift, and aging effects should be combined when evaluating a reference clock for this requirement.
5.13.2.3.5 OSC1 Not Used
Figure 5-16 shows the recommended oscillator connections when OSC1 is not used. An internal 10-kΩ
pullup on the RTC_XTALIN terminal is turned on when OSC1 is disabled to prevent this input from floating
to an invalid logic level which may increase leakage current through the oscillator input buffer. OSC1 is
disabled by default after power is applied. Therefore, both RTC_XTALIN and RTC_XTALOUT terminals
should be a no connect (NC) when OSC1 is not used.
For more information on disabling OSC1, see the device-specific technical reference manual.
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Device
RTC_XTALIN
VSS_RTC
RTC_XTALOUT
N/C
N/C
Copyright © 2016, Texas Instruments Incorporated
Figure 5-16. OSC1 Not Used Schematic
5.13.2.4 Output Clock Specifications
The device has two clock output signals. The CLKOUT1 signal can be configured to output the master
oscillator (CLK_M_OSC), EXTDEV_PLL, 32-kHz, or several other internal clocks. See the device-specific
TRM for more details. The CLKOUT2 signal can be configured to output the OSC1 input clock, which is
referred to as the 32K oscillator (CLK_32K_RTC) in the device-specific technical reference manual, or four
other internal clocks. For more information related to configuring these clock output signals, see the
CLKOUT Signals section of the device-specific technical reference manual.
5.13.2.5 Output Clock Characteristics
5.13.2.5.1 CLKOUT1
The CLKOUT1 signal can be output on the XDMA_EVENT_INTR0 terminal. This terminal connects to one
of seven internal signals through configurable multiplexers. The XDMA_EVENT_INTR0 multiplexer must
be configured for Mode 3 to connect the CLKOUT1 signal to the XDMA_EVENT_INTR0 terminal.
The default reset configuration of the XDMA_EVENT_INTR0 multiplexer is selected by the logic level
applied to the DSS_HSYNC terminal on the rising edge of PWRONRSTn. The XDMA_EVENT_INTR0
multiplexer is configured to Mode 7 if the DSS_HSYNC terminal is low on the rising edge of PWRONRSTn
or Mode 3 if the DSS_HSYNC terminal is high on the rising edge of PWRONRSTn. This allows the
CLKOUT1 signal to be output on the XDMA_EVENT_INTR0 terminal without software intervention. In this
mode, the output is held low while PWRONRSTn is active and begins to toggle after PWRONRSTn is
released.
5.13.2.5.2 CLKOUT2
The CLKOUT2 signal can be output on the XDMA_EVENT_INTR1 terminal. This terminal connects to one
of seven internal signals through configurable multiplexers. The XDMA_EVENT_INTR1 multiplexer must
be configured for Mode 3 to connect the CLKOUT2 signal to the XDMA_EVENT_INTR1 terminal.
The default reset configuration of the XDMA_EVENT_INTR1 multiplexer is always Mode 7. Software must
configure the XDMA_EVENT_INTR1 multiplexer to Mode 3 for the CLKOUT2 signal to be output on the
XDMA_EVENT_INTR1 terminal.
5.13.3
Timing Parameters and Board Routing Analysis
The timing parameter values specified in this data manual do not include delays by board routings. As a
good board design practice, such delays must always be taken into account. Timing values may be
adjusted by increasing or decreasing such delays. TI recommends using the available IO buffer
information specification (IBIS) models to analyze the timing characteristics correctly. If needed, external
logic hardware such as buffers may be used to compensate any timing differences.
The timing parameter values specified in this data manual assume the SLEWCTRL bit in each pad control
register is configured for fast mode (0b).
138
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For the LPDDR2, DDR3, and DDR3L memory interfaces, it is not necessary to use the IBIS models to
analyze timing characteristics. TI provides a PCB routing rules solution that describes the routing rules to
ensure the memory interface timings are met.
5.13.4 Recommended Clock and Control Signal Transition Behavior
All clocks and control signals must transition between VIH and VIL (or between VIL and VIH) in a monotonic
manner.
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5.13.5 Controller Area Network (CAN)
For more information, see the Controller Area Network (CAN) section of the AM437x Sitara Processors
Technical Reference Manual.
5.13.5.1 DCAN Electrical Data and Timing
Table 5-19. Timing Requirements for DCANx Receive
(see Figure 5-17)
OPP100
NO.
fbaud(baud)
1
tw(RX)
OPP50
MIN
MAX
(1)
(1)
Maximum programmable baud rate
MAX
1
Mbps
(1)
(1)
ns
1
Pulse duration, receive data bit
H-2
H+2
UNIT
MIN
H+2
H+2
(1) H = period of baud rate, 1/programmed baud rate.
Table 5-20. Switching Characteristics for DCANx Transmit
(see Figure 5-17)
NO.
2
OPP100
PARAMETER
fbaud(baud)
Maximum programmable baud rate
tw(TX)
Pulse duration, transmit data bit
OPP50
MIN
MAX
H - 2(1)
H + 2(1)
MIN
MAX
H - 2(1)
H + 2(1)
1
1
UNIT
Mbps
ns
(1) H = period of baud rate, 1/programmed baud rate.
1
DCANx_RX
2
DCANx_TX
Figure 5-17. DCANx Timings
140
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5.13.6 DMTimer
5.13.6.1 DMTimer Electrical Data and Timing
Table 5-21. Timing Requirements for DMTimer [1-11]
(see Figure 5-18)
NO.
1
(1)
MIN
tc(TCLKIN)
MAX
UNIT
4P+1 (1)
Cycle time, TCLKIN
ns
P = period of PICLKOCP (interface clock).
Table 5-22. Switching Characteristics for DMTimer [4-7]
(see Figure 5-18)
NO.
(1)
PARAMETER
MIN
MAX
UNIT
2
tw(TIMERxH)
Pulse duration, high
4P-3 (1)
ns
3
tw(TIMERxL)
Pulse duration, low
4P-3 (1)
ns
P = period of PICLKTIMER (functional clock).
1
TCLKIN
2
3
TIMER[x]
Figure 5-18. Timer Timing
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5.13.7 Ethernet Media Access Controller (EMAC) and Switch
5.13.7.1 Ethernet MAC and Switch Electrical Data and Timing
The Ethernet MAC and Switch implemented in the device supports GMII mode, but the design does not
pin out 9 of the 24 GMII signals. This was done to reduce the total number of package terminals.
Therefore, the device does not support GMII mode. MII mode is supported with the remaining GMII
signals.
The AM437x Sitara Processors Technical Reference Manual and this document may reference internal
signal names when discussing peripheral input and output signals because many of the package terminals
can be multiplexed to one of several peripheral signals. For example, the terminal names for port 1 of the
Ethernet MAC and switch have been changed from GMII to MII to indicate their Mode 0 function, but the
internal signal is named GMII. However, documents that describe the Ethernet switch reference these
signals by their internal signal name. For a cross-reference of internal signal names to terminal names,
see Table 4-10.
Operation of the Ethernet MAC and switch in RGMII mode is not supported for OPP50.
Table 5-23. Ethernet MAC and Switch Timing Conditions
TIMING CONDITION PARAMETER
MIN
TYP
MAX
UNIT
Input Conditions
tR
Input signal rise time
tF
Input signal fall time
1(1)
5(1)
ns
(1)
(1)
ns
30
pF
1
5
Output Condition
CLOAD
Output load capacitance
3
(1) Except when specified otherwise.
5.13.7.1.1 Ethernet MAC/Switch MDIO Electrical Data and Timing
Table 5-24. Timing Requirements for MDIO_DATA
(see Figure 5-19)
NO.
MIN
1
tsu(MDIO-MDC)
Setup time, MDIO valid before MDC high
2
th(MDIO-MDC)
Hold time, MDIO valid from MDC high
TYP
MAX
UNIT
90
ns
0
ns
1
2
MDIO_CLK (Output)
MDIO_DATA (Input)
Figure 5-19. MDIO_DATA Timing - Input Mode
Table 5-25. Switching Characteristics for MDIO_CLK
(see Figure 5-20)
NO.
142
PARAMETER
MIN
TYP
MAX
UNIT
1
tc(MDC)
Cycle time, MDC
400
ns
2
tw(MDCH)
Pulse duration, MDC high
160
ns
3
tw(MDCL)
Pulse duration, MDC low
160
4
tt(MDC)
Transition time, MDC
Specifications
ns
5
ns
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4
1
3
2
MDIO_CLK
4
Figure 5-20. MDIO_CLK Timing
Table 5-26. Switching Characteristics for MDIO_DATA
(see Figure 5-21)
NO.
1
PARAMETER
td(MDC-MDIO)
MIN
Delay time, MDC high to MDIO valid
TYP
10
MAX
UNIT
390
ns
1
MDIO_CLK (Output)
MDIO_DATA (Output)
Figure 5-21. MDIO_DATA Timing - Output Mode
5.13.7.1.2 Ethernet MAC and Switch MII Electrical Data and Timing
Table 5-27. Timing Requirements for GMII[x]_RXCLK - MII Mode
(see Figure 5-22)
10 Mbps
NO.
MIN
TYP
100 Mbps
MAX
MIN
TYP
MAX
UNIT
1
tc(RX_CLK)
Cycle time, RX_CLK
399.96
400.04
39.996
40.004
ns
2
tw(RX_CLKH)
Pulse Duration, RX_CLK high
140
260
14
26
ns
3
tw(RX_CLKL)
Pulse Duration, RX_CLK low
140
260
14
26
ns
4
tt(RX_CLK)
Transition time, RX_CLK
5
ns
5
4
1
2
3
GMII[x]_RXCLK
4
Figure 5-22. GMII[x]_RXCLK Timing - MII Mode
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Table 5-28. Timing Requirements for GMII[x]_TXCLK - MII Mode
(see Figure 5-23)
10 Mbps
NO.
MIN
100 Mbps
TYP
MAX
MIN
TYP
MAX
UNIT
1
tc(TX_CLK)
Cycle time, TX_CLK
399.96
400.04
39.996
40.004
ns
2
tw(TX_CLKH)
Pulse Duration, TX_CLK high
140
260
14
26
ns
3
tw(TX_CLKL)
Pulse Duration, TX_CLK low
140
260
14
26
ns
4
tt(TX_CLK)
Transition time, TX_CLK
5
ns
5
4
1
3
2
GMII[x]_TXCLK
4
Figure 5-23. GMII[x]_TXCLK Timing - MII Mode
Table 5-29. Timing Requirements for GMII[x]_RXD[3:0], GMII[x]_RXDV, and GMII[x]_RXER - MII Mode
(see Figure 5-24)
10 Mbps
NO.
1
2
MIN
tsu(RXD-RX_CLK)
Setup time, RXD[3:0] valid before RX_CLK
tsu(RX_DV-RX_CLK)
Setup time, RX_DV valid before RX_CLK
tsu(RX_ER-RX_CLK)
Setup time, RX_ER valid before RX_CLK
th(RX_CLK-RXD)
Hold time RXD[3:0] valid after RX_CLK
th(RX_CLK-RX_DV)
Hold time RX_DV valid after RX_CLK
th(RX_CLK-RX_ER)
Hold time RX_ER valid after RX_CLK
100 Mbps
TYP
MAX
MIN
TYP
MAX
UNIT
8
8
ns
8
8
ns
1
2
GMII[x]_MRCLK (Input)
GMII[x]_RXD[3:0], GMII[x]_RXDV,
GMII[x]_RXER (Inputs)
Figure 5-24. GMII[x]_RXD[3:0], GMII[x]_RXDV, GMII[x]_RXER Timing - MII Mode
144
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Table 5-30. Switching Characteristics for GMII[x]_TXD[3:0], and GMII[x]_TXEN - MII Mode
(see Figure 5-25)
NO.
1
PARAMETER
td(TX_CLK-TXD)
Delay time, TX_CLK high to TXD[3:0] valid
td(TX_CLK-TX_EN)
Delay time, TX_CLK to TX_EN valid
10 Mbps
MIN
TYP
100 Mbps
MAX
MIN
25
5
5
TYP
MAX
25
UNIT
ns
1
GMII[x]_TXCLK (input)
GMII[x]_TXD[3:0],
GMII[x]_TXEN (outputs)
Figure 5-25. GMII[x]_TXD[3:0], GMII[x]_TXEN Timing - MII Mode
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5.13.7.1.3 Ethernet MAC and Switch RMII Electrical Data and Timing
Table 5-31. Timing Requirements for RMII[x]_REFCLK - RMII Mode
(see Figure 5-26)
NO.
MIN
TYP
MAX
UNIT
1
tc(REF_CLK)
Cycle time, REF_CLK
19.999
20.001
ns
2
tw(REF_CLKH)
Pulse Duration, REF_CLK high
7
13
ns
3
tw(REF_CLKL)
Pulse Duration, REF_CLK low
7
13
ns
1
2
RMII[x]_REFCLK
(Input)
3
Figure 5-26. RMII[x]_REFCLK Timing - RMII Mode
Table 5-32. Timing Requirements for RMII[x]_RXD[1:0], RMII[x]_CRS_DV, and RMII[x]_RXER - RMII Mode
(see Figure 5-27)
NO.
1
2
MIN
tsu(RXD-REF_CLK)
Setup time, RXD[1:0] valid before REF_CLK
tsu(CRS_DV-REF_CLK)
Setup time, CRS_DV valid before REF_CLK
tsu(RX_ER-REF_CLK)
Setup time, RX_ER valid before REF_CLK
th(REF_CLK-RXD)
Hold time RXD[1:0] valid after REF_CLK
th(REF_CLK-CRS_DV)
Hold time, CRS_DV valid after REF_CLK
th(REF_CLK-RX_ER)
Hold time, RX_ER valid after REF_CLK
TYP
MAX
UNIT
4
ns
2
ns
1
2
RMII[x]_REFCLK (input)
RMII[x]_RXD[1:0], RMII[x]_CRS_DV,
RMII[x]_RXER (inputs)
Figure 5-27. RMII[x]_RXD[1:0], RMII[x]_CRS_DV, RMII[x]_RXER Timing - RMII Mode
146
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Table 5-33. Switching Characteristics for RMII[x]_TXD[1:0], and RMII[x]_TXEN - RMII Mode
(see Figure 5-28)
NO.
1
2
3
PARAMETER
td(REF_CLK-TXD)
Delay time, REF_CLK high to TXD[1:0] valid
td(REF_CLK-TXEN)
Delay time, REF_CLK to TXEN valid
tr(TXD)
Rise time, TXD outputs
tr(TX_EN)
Rise time, TX_EN output
tf(TXD)
Fall time, TXD outputs
tf(TX_EN)
Fall time, TX_EN output
MIN
TYP
MAX
UNIT
2
14.2
ns
1
5
ns
1
5
ns
1
RMII[x]_REFCLK (Input)
RMII[x]_TXD[1:0],
RMII[x]_TXEN (Outputs)
3
2
Figure 5-28. RMII[x]_TXD[1:0], RMII[x]_TXEN Timing - RMII Mode
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5.13.7.1.4 Ethernet MAC and Switch RGMII Electrical Data and Timing
Table 5-34. Timing Requirements for RGMII[x]_RCLK - RGMII Mode
(see Figure 5-29)
10 Mbps
NO.
1
MIN
100 Mbps
TYP
MAX
MIN
TYP
1000 Mbps
MAX
MIN
TYP
MAX
UNIT
tc(RXC)
Cycle time, RXC
360
440
36
44
7.2
8.8
ns
2
tw(RXCH)
Pulse duration, RXC
high
160
240
16
24
3.6
4.4
ns
3
tw(RXCL)
Pulse duration, RXC low
160
240
16
24
3.6
4.4
ns
4
tt(RXC)
Transition time, RXC
0.75
ns
0.75
0.75
1
4
2
4
3
RGMII[x]_RCLK
Figure 5-29. RGMII[x]_RCLK Timing - RGMII Mode
Table 5-35. Timing Requirements for RGMII[x]_RD[3:0], and RGMII[x]_RCTL - RGMII Mode
(see Figure 5-30)
10 Mbps
NO.
MIN
MAX
MIN
TYP
1000 Mbps
MAX
MIN
TYP
MAX
tsu(RD-RXC)
Setup time, RD[3:0] valid
before RXC high or low
1
1
1
tsu(RX_CTL-RXC)
Setup time, RX_CTL valid
before RXC high or low
1
1
1
th(RXC-RD)
Hold time, RD[3:0] valid
after RXC high or low
1
1
1
th(RXC-RX_CTL)
Hold time, RX_CTL valid
after RXC high or low
1
1
1
tt(RD)
Transition time, RD
0.75
0.75
0.75
tt(RX_CTL)
Transition time, RX_CTL
0.75
0.75
0.75
1
2
3
TYP
100 Mbps
UNIT
ns
ns
ns
(A)
RGMII[x]_RCLK
1
1st Half-byte
2
2nd Half-byte
(B)
RGMII[x]_RD[3:0]
(B)
RGMII[x]_RCTL
RGRXD[3:0]
RGRXD[7:4]
RXDV
RXERR
3
A.
B.
RGMII[x]_RCLK must be externally delayed relative to the RGMII[x]_RD[3:0] and RGMII[x]_RCTL signals to meet the
respective timing requirements.
Data and control information is received using both edges of the clocks. RGMII[x]_RD[3:0] carries data bits 3-0 on the
rising edge of RGMII[x]_RCLK and data bits 7-4 on the falling edge of RGMII[x]_RCLK. Similarly, RGMII[x]_RCTL
carries RXDV on rising edge of RGMII[x]_RCLK and RXERR on falling edge of RGMII[x]_RCLK.
Figure 5-30. RGMII[x]_RD[3:0], RGMII[x]_RCTL Timing - RGMII Mode
148
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Table 5-36. Switching Characteristics for RGMII[x]_TCLK - RGMII Mode
(see Figure 5-31)
NO.
1
10 Mbps
PARAMETER
MIN
100 Mbps
TYP
MAX
MIN
1000 Mbps
TYP
MAX
MIN
TYP
MAX
UNIT
tc(TXC)
Cycle time, TXC
360
440
36
44
7.2
8.8
ns
2
tw(TXCH)
Pulse duration, TXC
high
160
240
16
24
3.6
4.4
ns
3
tw(TXCL)
Pulse duration, TXC low
160
240
16
24
3.6
4.4
ns
4
tt(TXC)
Transition time, TXC
0.75
ns
0.75
0.75
1
4
2
4
3
RGMII[x]_TCLK
Figure 5-31. RGMII[x]_TCLK Timing - RGMII Mode
Table 5-37. Switching Characteristics for RGMII[x]_TD[3:0], and RGMII[x]_TCTL - RGMII Mode
(see Figure 5-32)
NO.
10 Mbps
PARAMETER
1
2
MIN
TYP
100 Mbps
MAX
MIN
TYP
1000 Mbps
MAX
MIN
TYP
MAX
tsk(TD-TXC)
TD to TXC output skew
-0.5
0.5
-0.5
0.5
-0.5
0.5
tsk(TX_CTL-TXC)
TX_CTL to TXC output skew
-0.5
0.5
-0.5
0.5
-0.5
0.5
tt(TD)
Transition time, TD
0.75
0.75
0.75
tt(TX_CTL)
Transition time, TX_CTL
0.75
0.75
0.75
UNIT
ns
ns
(A)
RGMII[x]_TCLK
1
1
2
(B)
1st Half-byte
2nd Half-byte
(B)
TXEN
TXERR
RGMII[x]_TD[3:0]
RGMII[x]_TCTL
A.
B.
The Ethernet MAC and switch implemented in the device supports internal TX delay mode.
Data and control information is transmitted using both edges of the clocks. RGMII[x]_TD[3:0] carries data bits 3-0 on
the rising edge of RGMII[x]_TCLK and data bits 7-4 on the falling edge of RGMII[x]_TCLK. Similarly, RGMII[x]_TCTL
carries TXEN on rising edge of RGMII[x]_TCLK and TXERR of falling edge of RGMII[x]_TCLK.
Figure 5-32. RGMII[x]_TD[3:0], RGMII[x]_TCTL Timing - RGMII Mode
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5.13.8 External Memory Interfaces
The device includes the following external memory interfaces:
• General-purpose memory controller (GPMC)
• LPDDR2, DDR3, and DDR3L Memory Interface (EMIF)
5.13.8.1 General-Purpose Memory Controller (GPMC)
NOTE
For more information, see the Memory Subsystem and General-Purpose Memory Controller
section of the AM437x Sitara Processors Technical Reference Manual.
The GPMC is the unified memory controller used to interface external memory devices such as:
• Asynchronous SRAM-like memories and ASIC devices
• Asynchronous page mode and synchronous burst NOR flash
• NAND flash
5.13.8.1.1 GPMC and NOR Flash—Synchronous Mode
Table 5-39 and Table 5-40 assume testing over the recommended operating conditions and electrical
characteristic conditions below (see Figure 5-33 through Figure 5-37).
Table 5-38. GPMC and NOR Flash Timing Conditions—Synchronous Mode
TIMING CONDITION PARAMETER
MIN
TYP
MAX
UNIT
Input Conditions
tR
Input signal rise time
0.3
1.8
ns
tF
Input signal fall time
0.3
1.8
ns
3
30
pF
Output Condition
CLOAD
Output load capacitance
Table 5-39. GPMC and NOR Flash Timing Requirements—Synchronous Mode
OPP100
NO.
MIN
MAX
OPP50
MIN
MAX
UNIT
F12
tsu(dV-clkH)
Setup time, input data gpmc_ad[15:0] valid before output clock
gpmc_clk high
3.5
13.2
ns
F13
th(clkH-dV)
Hold time, input data gpmc_ad[15:0] valid after output clock
gpmc_clk high
2.5
2.75
ns
F21
tsu(waitV-clkH)
Setup time, input wait gpmc_wait[x](1) valid before output clock
gpmc_clk high
3.5
13.2
ns
F22
th(clkH-waitV)
Hold time, input wait gpmc_wait[x](1) valid after output clock
gpmc_clk high
2.5
2.5
ns
(1) In gpmc_wait[x], x is equal to 0 or 1.
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Table 5-40. GPMC and NOR Flash Switching Characteristics—Synchronous Mode
NO.
PARAMETER
OPP100
OPP50
MIN
MAX
MIN
MAX
UNIT
F0
1 / tc(clk)
Frequency(1), output clock gpmc_clk
F1
tw(clkH)
Typical pulse duration, output clock gpmc_clk high
0.5P(2)
0.5P(2)
0.5P(2)
0.5P(2)
ns
F1
tw(clkL)
Typical pulse duration, output clock gpmc_clk low
0.5P(2)
0.5P(2)
0.5P(2)
0.5P(2)
ns
tdc(clk)
Duty cycle error, output clock gpmc_clk
–500
500
–500
500
ps
100
(3)
50
MHz
tJ(clk)
Jitter standard deviation , output clock gpmc_clk
33.33
33.33
ps
tR(clk)
Rise time, output clock gpmc_clk
2
2
ns
tF(clk)
Fall time, output clock gpmc_clk
2
2
ns
tR(do)
Rise time, output data gpmc_ad[15:0]
2
2
ns
tF(do)
Fall time, output data gpmc_ad[15:0]
2
2
ns
F2
td(clkH-csnV)
Delay time, output clock gpmc_clk rising edge to
output chip select gpmc_csn[x](4) transition
F(5) – 2.2
F(5) + 4.5
F(5) – 3.2
F(5) + 9.5
ns
F3
td(clkH-csnIV)
Delay time, output clock gpmc_clk rising edge to
output chip select gpmc_csn[x](4) invalid
E(6) – 2.2
E(6) + 4.5
E(6) – 3.2
E(6) + 9.5
ns
F4
td(aV-clk)
Delay time, output address gpmc_a[27:1] valid to
output clock gpmc_clk first edge
B(7) – 4.5
B(7) + 3.1
B(7) – 5.5
B(7) + 13.1
ns
F5
td(clkH-aIV)
Delay time, output clock gpmc_clk rising edge to
output address gpmc_a[27:1] invalid
-2.3
4.5
-3.3
15.3
ns
F6
td(be[x]nV-clk)
Delay time, output lower byte enable and command
latch enable gpmc_be0n_cle, output upper byte
enable gpmc_be1n valid to output clock gpmc_clk
first edge
B(7) - 1.9
B(7) + 2.3
B(7) – 2.9
B(7) + 12.3
ns
F7
td(clkH-be[x]nIV)
Delay time, output clock gpmc_clk rising edge to
output lower byte enable and command latch enable
gpmc_be0n_cle, output upper byte enable
gpmc_be1n invalid(8)
D(9) – 2.3
D(9) + 1.9
D(9) – 3.3
D(9) + 6.9
ns
F7
td(clkL-be[x]nIV)
Delay time, gpmc_clk falling edge to
gpmc_nbe0_cle, gpmc_nbe1 invalid(10)
D(9) – 2.3
D(9) + 1.9
D(9) – 3.3
D(9) + 6.9
ns
F7
td(clkL-be[x]nIV)
Delay time, gpmc_clk falling edge to
gpmc_nbe0_cle, gpmc_nbe1 invalid(11)
D(9) – 2.3
D(9) + 1.9
D(9) – 3.3
D(9) + 11.9
ns
F8
td(clkH-advn)
Delay time, output clock gpmc_clk rising edge to
output address valid and address latch enable
gpmc_advn_ale transition
G(12) – 2.3 G(12) + 4.5 G(12) – 3.3
G(12) + 9.5
ns
F9
td(clkH-advnIV)
Delay time, output clock gpmc_clk rising edge to
output address valid and address latch enable
gpmc_advn_ale invalid
D(9) – 3.3
D(9) + 9.5
ns
F10
td(clkH-oen)
Delay time, output clock gpmc_clk rising edge to
output enable gpmc_oen transition
H(13) – 2.3 H(13) + 3.5 H(13) – 3.3
H(13) + 8.5
ns
F11
td(clkH-oenIV)
Delay time, output clock gpmc_clk rising edge to
output enable gpmc_oen invalid
H(13) – 2.3 H(13) + 3.5 H(13) – 3.3
H(13) + 8.5
ns
F14
td(clkH-wen)
Delay time, output clock gpmc_clk rising edge to
output write enable gpmc_wen transition
I(14) – 2.3
I(14) + 4.5
I(14) – 3.3
I(14) + 9.5
ns
F15
td(clkH-do)
Delay time, output clock gpmc_clk rising edge to
output data gpmc_ad[15:0] transition(8)
J(15) – 2.3
J(15) + 2.7
J(15) – 3.3
J(15) + 7.7
ns
F15
td(clkL-do)
Delay time, gpmc_clk falling edge to gpmc_ad[15:0]
data bus transition(10)
J(15) – 2.3
J(15) + 2.7
J(15) – 3.3
J(15) + 7.7
ns
F15
td(clkL-do)
Delay time, gpmc_clk falling edge to gpmc_ad[15:0]
data bus transition(11)
J(15) – 2.3
J(15) + 2.7
J(15) – 3.3
J(15) + 12.7
ns
F17
td(clkH-be[x]n)
Delay time, output clock gpmc_clk rising edge to
output lower byte enable and command latch enable
gpmc_be0n_cle transition(8)
J(15) – 2.3
J(15) + 1.9
J(15) – 3.3
J(15) + 6.9
ns
F17
td(clkL-be[x]n)
Delay time, gpmc_clk falling edge to
gpmc_nbe0_cle, gpmc_nbe1 transition(10)
J(15) – 2.3
J(15) + 1.9
J(15) – 3.3
J(15) + 6.9
ns
F17
td(clkL-be[x]n)
Delay time, gpmc_clk falling edge to
gpmc_nbe0_cle, gpmc_nbe1 transition(11)
J(15) – 2.3
J(15) + 1.9
J(15) – 3.3
J(15) + 11.9
ns
D(9) – 2.3
D(9) + 4.5
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Table 5-40. GPMC and NOR Flash Switching Characteristics—Synchronous Mode (continued)
NO.
F18
F19
F20
OPP100
PARAMETER
tw(csnV)
tw(be[x]nV)
tw(advnV)
MIN
OPP50
MAX
MIN
MAX
UNIT
Pulse duration, output chip select
gpmc_csn[x](4) low
Read
A(16)
A(16)
ns
Write
A
(16)
A(16)
ns
Pulse duration, output lower byte enable
and command latch enable
gpmc_be0n_cle, output upper byte enable
gpmc_be1n low
Read
C(17)
C(17)
ns
Write
C
(17)
(17)
ns
Pulse duration, output address valid and
address latch enable gpmc_advn_ale low
Read
K(18)
K(18)
ns
Write
(18)
(18)
ns
K
C
K
(1) Related to the gpmc_clk output clock maximum and minimum frequencies programmable in the GPMC module by setting the
GPMC_CONFIG1_CSx configuration register bit field GpmcFCLKDivider.
(2) P = gpmc_clk period in ns
(3) The jitter probability density can be approximated by a Gaussian function.
(4) In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
(5) For csn falling edge (CS activated):
–
–
–
Case GpmcFCLKDivider = 0:
– F = 0.5 × CSExtraDelay × GPMC_FCLK(19)
Case GpmcFCLKDivider = 1:
– F = 0.5 × CSExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and CSOnTime are odd) or (ClkActivationTime and
CSOnTime are even)
– F = (1 + 0.5 × CSExtraDelay) × GPMC_FCLK(19) otherwise
Case GpmcFCLKDivider = 2:
– F = 0.5 × CSExtraDelay × GPMC_FCLK(19) if ((CSOnTime – ClkActivationTime) is a multiple of 3)
– F = (1 + 0.5 × CSExtraDelay) × GPMC_FCLK(19) if ((CSOnTime – ClkActivationTime – 1) is a multiple of 3)
– F = (2 + 0.5 × CSExtraDelay) × GPMC_FCLK(19) if ((CSOnTime – ClkActivationTime – 2) is a multiple of 3)
(6) For single read: E = (CSRdOffTime – AccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst read: E = (CSRdOffTime – AccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst write: E = (CSWrOffTime – AccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
(7) B = ClkActivationTime × GPMC_FCLK(19)
(8) First transfer only for CLK DIV 1 mode.
(9) For single read: D = (RdCycleTime – AccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst read: D = (RdCycleTime – AccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst write: D = (WrCycleTime – AccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
(10) Half cycle; for all data after initial transfer for CLK DIV 1 mode.
(11) Half cycle of GPMC_CLK_OUT; for all data for modes other than CLK DIV 1 mode. GPMC_CLK_OUT divide down from GPMC_FCLK.
(12) For ADV falling edge (ADV activated):
– Case GpmcFCLKDivider = 0:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19)
– Case GpmcFCLKDivider = 1:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and ADVOnTime are odd) or (ClkActivationTime and
ADVOnTime are even)
– G = (1 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) otherwise
– Case GpmcFCLKDivider = 2:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19) if ((ADVOnTime – ClkActivationTime) is a multiple of 3)
– G = (1 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) if ((ADVOnTime – ClkActivationTime – 1) is a multiple of 3)
– G = (2 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) if ((ADVOnTime – ClkActivationTime – 2) is a multiple of 3)
For ADV rising edge (ADV deactivated) in Reading mode:
– Case GpmcFCLKDivider = 0:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19)
– Case GpmcFCLKDivider = 1:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and ADVRdOffTime are odd) or (ClkActivationTime and
ADVRdOffTime are even)
– G = (1 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) otherwise
– Case GpmcFCLKDivider = 2:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19) if ((ADVRdOffTime – ClkActivationTime) is a multiple of 3)
– G = (1 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) if ((ADVRdOffTime – ClkActivationTime – 1) is a multiple of 3)
– G = (2 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) if ((ADVRdOffTime – ClkActivationTime – 2) is a multiple of 3)
For ADV rising edge (ADV deactivated) in Writing mode:
– Case GpmcFCLKDivider = 0:
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–
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– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19)
Case GpmcFCLKDivider = 1:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and ADVWrOffTime are odd) or (ClkActivationTime and
ADVWrOffTime are even)
– G = (1 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) otherwise
Case GpmcFCLKDivider = 2:
– G = 0.5 × ADVExtraDelay × GPMC_FCLK(19) if ((ADVWrOffTime – ClkActivationTime) is a multiple of 3)
– G = (1 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) if ((ADVWrOffTime – ClkActivationTime – 1) is a multiple of 3)
– G = (2 + 0.5 × ADVExtraDelay) × GPMC_FCLK(19) if ((ADVWrOffTime – ClkActivationTime – 2) is a multiple of 3)
(13) For OE falling edge (OE activated) and IO DIR rising edge (Data Bus input direction):
– Case GpmcFCLKDivider = 0:
– H = 0.5 × OEExtraDelay × GPMC_FCLK(19)
– Case GpmcFCLKDivider = 1:
– H = 0.5 × OEExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and OEOnTime are odd) or (ClkActivationTime and
OEOnTime are even)
– H = (1 + 0.5 × OEExtraDelay) × GPMC_FCLK(19) otherwise
– Case GpmcFCLKDivider = 2:
– H = 0.5 × OEExtraDelay × GPMC_FCLK(19) if ((OEOnTime – ClkActivationTime) is a multiple of 3)
– H = (1 + 0.5 × OEExtraDelay) × GPMC_FCLK(19) if ((OEOnTime – ClkActivationTime – 1) is a multiple of 3)
– H = (2 + 0.5 × OEExtraDelay) × GPMC_FCLK(19) if ((OEOnTime – ClkActivationTime – 2) is a multiple of 3)
For OE rising edge (OE deactivated):
– Case GpmcFCLKDivider = 0:
– H = 0.5 × OEExtraDelay × GPMC_FCLK(19)
– Case GpmcFCLKDivider = 1:
– H = 0.5 × OEExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and OEOffTime are odd) or (ClkActivationTime and
OEOffTime are even)
– H = (1 + 0.5 × OEExtraDelay) × GPMC_FCLK(19) otherwise
– Case GpmcFCLKDivider = 2:
– H = 0.5 × OEExtraDelay × GPMC_FCLK(19) if ((OEOffTime – ClkActivationTime) is a multiple of 3)
– H = (1 + 0.5 × OEExtraDelay) × GPMC_FCLK(19) if ((OEOffTime – ClkActivationTime – 1) is a multiple of 3)
– H = (2 + 0.5 × OEExtraDelay) × GPMC_FCLK(19) if ((OEOffTime – ClkActivationTime – 2) is a multiple of 3)
(14) For WE falling edge (WE activated):
– Case GpmcFCLKDivider = 0:
– I = 0.5 × WEExtraDelay × GPMC_FCLK(19)
– Case GpmcFCLKDivider = 1:
– I = 0.5 × WEExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and WEOnTime are odd) or (ClkActivationTime and
WEOnTime are even)
– I = (1 + 0.5 × WEExtraDelay) × GPMC_FCLK(19) otherwise
– Case GpmcFCLKDivider = 2:
– I = 0.5 × WEExtraDelay × GPMC_FCLK(19) if ((WEOnTime – ClkActivationTime) is a multiple of 3)
– I = (1 + 0.5 × WEExtraDelay) × GPMC_FCLK(19) if ((WEOnTime – ClkActivationTime – 1) is a multiple of 3)
– I = (2 + 0.5 × WEExtraDelay) × GPMC_FCLK(19) if ((WEOnTime – ClkActivationTime – 2) is a multiple of 3)
For WE rising edge (WE deactivated):
– Case GpmcFCLKDivider = 0:
– I = 0.5 × WEExtraDelay × GPMC_FCLK (19)
– Case GpmcFCLKDivider = 1:
– I = 0.5 × WEExtraDelay × GPMC_FCLK(19) if (ClkActivationTime and WEOffTime are odd) or (ClkActivationTime and
WEOffTime are even)
– I = (1 + 0.5 × WEExtraDelay) × GPMC_FCLK(19) otherwise
– Case GpmcFCLKDivider = 2:
– I = 0.5 × WEExtraDelay × GPMC_FCLK(19) if ((WEOffTime – ClkActivationTime) is a multiple of 3)
– I = (1 + 0.5 × WEExtraDelay) × GPMC_FCLK(19) if ((WEOffTime – ClkActivationTime – 1) is a multiple of 3)
– I = (2 + 0.5 × WEExtraDelay) × GPMC_FCLK(19) if ((WEOffTime – ClkActivationTime – 2) is a multiple of 3)
(15) J = GPMC_FCLK(19)
(16) For single read: A = (CSRdOffTime – CSOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst read: A = (CSRdOffTime – CSOnTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst write: A = (CSWrOffTime – CSOnTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
With n being the page burst access number.
(17) For single read: C = RdCycleTime × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst read: C = (RdCycleTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For burst write: C = (WrCycleTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
With n being the page burst access number.
(18) For read: K = (ADVRdOffTime – ADVOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
For write: K = (ADVWrOffTime – ADVOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK(19)
(19) GPMC_FCLK is general-purpose memory controller internal functional clock period in ns.
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F1
F0
F1
gpmc_clk
F2
F3
F18
gpmc_csn[x]
(A)
F4
gpmc_a[10:1]
Valid Address
F6
F7
F19
gpmc_be0n_cle
F19
gpmc_be1n
F6
F8
F8
F20
F9
gpmc_advn_ale
F10
F11
gpmc_oen
F13
F12
gpmc_ad[15:0]
gpmc_wait[x]
A.
B.
D0
(B)
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-33. GPMC and NOR Flash—Synchronous Single Read—(GpmcFCLKDivider = 0)
154
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F1
F0
F1
gpmc_clk
F2
gpmc_csn[x]
F3
(A)
F4
gpmc_a[10:1]
Valid Address
F6
F7
gpmc_be0n_cle
F7
gpmc_be1n
F6
F8
F8
F9
gpmc_advn_ale
F10
F11
gpmc_oen
F13
F13
F12
gpmc_ad[15:0]
D0
F21
gpmc_wait[x]
A.
B.
F12
D1
D2
D3
F22
(B)
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-34. GPMC and NOR Flash—Synchronous Burst Read—4x16-bit (GpmcFCLKDivider = 0)
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F1
F1
F0
gpmc_clk
F2
gpmc_csn[x]
F3
(A)
F4
Valid Address
gpmc_a[10:1]
F17
F6
F17
F17
gpmc_be0n_cle
F17
F17
F17
gpmc_be1n
F6
F8
F8
F9
gpmc_advn_ale
F14
F14
gpmc_wen
F15
gpmc_ad[15:0]
gpmc_wait[x]
A.
B.
D0
F15
D1
D2
F15
D3
(B)
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-35. GPMC and NOR Flash—Synchronous Burst Write—(GpmcFCLKDivider > 0)
156
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F1
F0
F1
gpmc_clk
F2
gpmc_csn[x]
F3
(A)
F6
F7
gpmc_be0n_cle
Valid
F6
F7
gpmc_be1n
Valid
F4
gpmc_a[27:17]
Address (MSB)
F12
F4
gpmc_ad[15:0]
F5
Address (LSB)
F13
D0
F8
D1
F12
D2
D3
F8
F9
gpmc_advn_ale
F10
F11
gpmc_oen
gpmc_wait[x]
A.
B.
(B)
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-36. GPMC and Multiplexed NOR Flash—Synchronous Burst Read
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F1
F1
F0
gpmc_clk
F2
F3
F18
gpmc_csn[x]
(A)
F4
gpmc_a[27:17]
Address (MSB)
F17
F6
F17
F6
F17
F17
gpmc_be1n
F17
F17
gpmc_be0n_cle
F8
F8
F20
F9
gpmc_advn_ale
F14
F14
gpmc_wen
F15
gpmc_ad[15:0]
Address (LSB)
D0
F22
gpmc_wait[x]
A.
B.
D1
F15
D2
F15
D3
F21
(B)
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-37. GPMC and Multiplexed NOR Flash—Synchronous Burst Write
158
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5.13.8.1.2 GPMC and NOR Flash—Asynchronous Mode
Table 5-42 and Table 5-43 assume testing over the recommended operating conditions and electrical
characteristic conditions below (see Figure 5-38 through Figure 5-43).
Table 5-41. GPMC and NOR Flash Timing Conditions—Asynchronous Mode
TIMING CONDITION PARAMETER
MIN
TYP
MAX
UNIT
Input Conditions
tR
Input signal rise time
0.3
1.8
ns
tF
Input signal fall time
0.3
1.8
ns
3
30
pF
Output Condition
CLOAD
Output load capacitance
Table 5-42. GPMC and NOR Flash Internal Timing Parameters—Asynchronous Mode(1)(2)
OPP100
NO.
MIN
FI1
Delay time, output data gpmc_ad[15:0] generation from internal functional clock
GPMC_FCLK(3)
FI2
Delay time, input data gpmc_ad[15:0] capture from internal functional clock
GPMC_FCLK(3)
FI3
OPP50
MAX
MIN
MAX
UNIT
6.5
6.5
ns
4
4
ns
Delay time, output chip select gpmc_csn[x] generation from internal functional
clock GPMC_FCLK(3)
6.5
6.5
ns
FI4
Delay time, output address gpmc_a[27:1] generation from internal functional clock
GPMC_FCLK(3)
6.5
6.5
ns
FI5
Delay time, output address gpmc_a[27:1] valid from internal functional clock
GPMC_FCLK(3)
6.5
6.5
ns
FI6
Delay time, output lower-byte enable and command latch enable gpmc_be0n_cle,
output upper-byte enable gpmc_be1n generation from internal functional clock
GPMC_FCLK(3)
6.5
6.5
ns
FI7
Delay time, output enable gpmc_oen generation from internal functional clock
GPMC_FCLK(3)
6.5
6.5
ns
FI8
Delay time, output write enable gpmc_wen generation from internal functional
clock GPMC_FCLK(3)
6.5
6.5
ns
FI9
Skew, internal functional clock GPMC_FCLK(3)
100
100
ps
(1) The internal parameters table must be used to calculate data access time stored in the corresponding CS register bit field.
(2) Internal parameters are referred to the GPMC functional internal clock which is not provided externally.
(3) GPMC_FCLK is general-purpose memory controller internal functional clock.
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Table 5-43. GPMC and NOR Flash Timing Requirements—Asynchronous Mode
NO.
OPP100
MIN
FA5(1)
tacc(d)
(2)
FA20
tacc1-pgmode(d)
FA21(3)
tacc2-pgmode(d)
OPP50
MAX
MIN
UNIT
MAX
H(4)
H(4)
ns
Page mode successive data access time
P
(5)
P(5)
ns
Page mode first data access time
H(4)
H(4)
ns
Data access time
(1) The FA5 parameter illustrates the amount of time required to internally sample input data. It is expressed in number of GPMC functional
clock cycles. From start of read cycle and after FA5 functional clock cycles, input data is internally sampled by active functional clock
edge. FA5 value must be stored inside the AccessTime register bit field.
(2) The FA20 parameter illustrates amount of time required to internally sample successive input page data. It is expressed in number of
GPMC functional clock cycles. After each access to input page data, next input page data is internally sampled by active functional clock
edge after FA20 functional clock cycles. The FA20 value must be stored in the PageBurstAccessTime register bit field.
(3) The FA21 parameter illustrates amount of time required to internally sample first input page data. It is expressed in number of GPMC
functional clock cycles. From start of read cycle and after FA21 functional clock cycles, first input page data is internally sampled by
active functional clock edge. FA21 value must be stored inside the AccessTime register bit field.
(4) H = AccessTime × (TimeParaGranularity + 1) × GPMC_FCLK(6)
(5) P = PageBurstAccessTime × (TimeParaGranularity + 1) × GPMC_FCLK(6)
(6) GPMC_FCLK is general-purpose memory controller internal functional clock period in ns.
Table 5-44. GPMC and NOR Flash Switching Characteristics—Asynchronous Mode
NO.
OPP100
PARAMETER
MIN
OPP50
MAX
MIN
2
MAX
tR(d)
Rise time, output data gpmc_ad[15:0]
tF(d)
Fall time, output data gpmc_ad[15:0]
Read
FA0
tw(be[x]nV)
Pulse duration, output lower-byte
enable and command latch enable
gpmc_be0n_cle, output upper-byte
enable gpmc_be1n valid time
Write
N(1)
N(1)
FA1
tw(csnV)
Pulse duration, output chip select
gpmc_csn[x](2) low
Read
A(3)
A(3)
Write
(3)
A(3)
FA3
td(csnV-advnIV)
Delay time, output chip select
Read
gpmc_csn[x](2) valid to output address
valid and address latch enable
Write
gpmc_advn_ale invalid
FA4
td(csnV-oenIV)
FA9
UNIT
2
ns
2
2
ns
N(1)
N(1)
A
ns
ns
B(4) – 0.2
B(4) + 2.0
B(4) – 0.2
B(4) + 2.0
B(4) – 0.2
B(4) + 2.0
B(4) – 0.2
B(4) + 2.0
Delay time, output chip select gpmc_csn[x](2)
valid to output enable gpmc_oen invalid (Single
read)
C(5) – 0.2
C(5) + 2.0
C(5) – 0.2
C(5) + 2.0
ns
td(aV-csnV)
Delay time, output address gpmc_a[27:1] valid
to output chip select gpmc_csn[x](2) valid
J(6) – 0.2
J(6) + 2.0
J(6) – 0.2
J(6) + 2.0
ns
FA10
td(be[x]nV-csnV)
Delay time, output lower-byte enable and
command latch enable gpmc_be0n_cle, output
upper-byte enable gpmc_be1n valid to output
chip select gpmc_csn[x](2) valid
J(6) – 0.2
J(6) + 2.0
J(6) – 0.2
J(6) + 2.0
ns
FA12
td(csnV-advnV)
Delay time, output chip select gpmc_csn[x](2)
valid to output address valid and address latch
enable gpmc_advn_ale valid
K(7) – 0.2
K(7) + 2.0
K(7) – 0.2
K(7) + 2.0
ns
FA13
td(csnV-oenV)
Delay time, output chip select gpmc_csn[x](2)
valid to output enable gpmc_oen valid
L(8) – 0.2
L(8) + 2.0
L
L(8) + 2.0
ns
FA16
tw(aIV)
Pulse durationm output address gpmc_a[26:1]
invalid between 2 successive read and write
accesses
G(9)
FA18
td(csnV-oenIV)
Delay time, output chip select gpmc_csn[x](2)
valid to output enable gpmc_oen invalid (Burst
read)
I(10) – 0.2
FA20
tw(aV)
Pulse duration, output address gpmc_a[27:1]
valid — 2nd, 3rd, and 4th accesses
D(11)
FA25
td(csnV-wenV)
Delay time, output chip select gpmc_csn[x](2)
valid to output write enable gpmc_wen valid
E(12) – 0.2
160
Specifications
(8)
– 0.2
G(9)
I(10) + 2.0
I(10) – 0.2
ns
I(10) + 2.0
D(11)
E(12) + 2.0
E(12) – 0.2
ns
ns
ns
E(12) + 2.0
ns
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Table 5-44. GPMC and NOR Flash Switching Characteristics—Asynchronous Mode (continued)
NO.
OPP100
PARAMETER
FA27
td(csnV-wenIV)
Delay time, output chip select gpmc_csn[x](2)
valid to output write enable gpmc_wen invalid
FA28
td(wenV-dV)
Delay time, output write enable gpmc_ wen
valid to output data gpmc_ad[15:0] valid
FA29
td(dV-csnV)
Delay time, output data gpmc_ad[15:0] valid to
output chip select gpmc_csn[x](2) valid
FA37
td(oenV-aIV)
Delay time, output enable gpmc_oen valid to
output address gpmc_ad[15:0] phase end
OPP50
UNIT
MIN
MAX
MIN
MAX
F(13) – 0.2
F(13) + 2.0
F(13) – 0.2
F(13) + 2.0
ns
5
ns
J(6) + 2.8
ns
2.8
ns
2.8
J(6) – 0.2
J(6) + 2.8
J(6) – 0.2
2.8
GPMC_FCLK(14)
(14)
(1) For single read: N = RdCycleTime × (TimeParaGranularity + 1) ×
For single write: N = WrCycleTime × (TimeParaGranularity + 1) × GPMC_FCLK
For burst read: N = (RdCycleTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(14)
For burst write: N = (WrCycleTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(14)
(2) In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
(3) For single read: A = (CSRdOffTime – CSOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK(14)
For single write: A = (CSWrOffTime – CSOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK(14)
For burst read: A = (CSRdOffTime – CSOnTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(14)
For burst write: A = (CSWrOffTime – CSOnTime + (n – 1) × PageBurstAccessTime) × (TimeParaGranularity + 1) × GPMC_FCLK(14)
with n being the page burst access number
(4) For reading: B = ((ADVRdOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (ADVExtraDelay – CSExtraDelay)) ×
GPMC_FCLK(14)
For writing: B = ((ADVWrOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (ADVExtraDelay – CSExtraDelay)) ×
GPMC_FCLK(14)
(5) C = ((OEOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (OEExtraDelay – CSExtraDelay)) × GPMC_FCLK(14)
(6) J = (CSOnTime × (TimeParaGranularity + 1) + 0.5 × CSExtraDelay) × GPMC_FCLK(14)
(7) K = ((ADVOnTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (ADVExtraDelay – CSExtraDelay)) × GPMC_FCLK(14)
(8) L = ((OEOnTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (OEExtraDelay – CSExtraDelay)) × GPMC_FCLK(14)
(9) G = Cycle2CycleDelay × GPMC_FCLK(14)
(10) I = ((OEOffTime + (n – 1) × PageBurstAccessTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (OEExtraDelay – CSExtraDelay))
× GPMC_FCLK(14)
(11) D = PageBurstAccessTime × (TimeParaGranularity + 1) × GPMC_FCLK(14)
(12) E = ((WEOnTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (WEExtraDelay – CSExtraDelay)) × GPMC_FCLK(14)
(13) F = ((WEOffTime – CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (WEExtraDelay – CSExtraDelay)) × GPMC_FCLK(14)
(14) GPMC_FCLK is general-purpose memory controller internal functional clock period in ns.
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GPMC_FCLK
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(A)
gpmc_clk
FA5
(B)
FA1
gpmc_csn[x]
(C)
FA9
gpmc_a[10:1]
Valid Address
FA0
FA10
Valid
gpmc_be0n_cle
FA0
Valid
gpmc_be1n
FA10
FA3
FA12
gpmc_advn_ale
FA4
FA13
gpmc_oen
Data IN 0
gpmc_ad[15:0]
gpmc_wait[x]
A.
B.
C.
Data IN 0
(C)
GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally.
FA5 parameter illustrates amount of time required to internally sample input data. It is expressed in number of GPMC
functional clock cycles. From start of read cycle and after FA5 functional clock cycles, input data will be internally
sampled by active functional clock edge. FA5 value must be stored inside AccessTime register bits field.
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-38. GPMC and NOR Flash—Asynchronous Read—Single Word
162
Specifications
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GPMC_FCLK
(A)
gpmc_clk
FA5
(B)
FA5
FA1
gpmc_csn[x]
(B)
FA1
(C)
FA16
FA9
FA9
gpmc_a[10:1]
Address 0
Address 1
FA0
FA10
FA0
FA10
gpmc_be0n_cle
Valid
Valid
FA0
gpmc_be1n
FA0
Valid
FA10
Valid
FA10
FA3
FA3
FA12
FA12
gpmc_advn_ale
FA4
FA13
FA4
FA13
gpmc_oen
gpmc_ad[15:0]
gpmc_wait[x]
A.
B.
C.
Data Upper
(C)
GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally.
FA5 parameter illustrates amount of time required to internally sample input data. It is expressed in number of GPMC
functional clock cycles. From start of read cycle and after FA5 functional clock cycles, input data will be internally
sampled by active functional clock edge. FA5 value must be stored inside AccessTime register bits field.
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-39. GPMC and NOR Flash—Asynchronous Read—32-Bit
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GPMC_FCLK
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(A)
gpmc_clk
FA21
(B)
FA20
(C)
FA20
(C)
FA20
(C)
FA1
gpmc_csn[x]
(D)
FA9
Add0
gpmc_a[10:1]
Add1
Add2
Add3
D0
D1
D2
Add4
FA0
FA10
gpmc_be0n_cle
FA0
FA10
gpmc_be1n
FA12
gpmc_advn_ale
FA18
FA13
gpmc_oen
gpmc_ad[15:0]
gpmc_wait[x]
A.
B.
C.
D.
D3
D3
(D)
GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally.
FA21 parameter illustrates amount of time required to internally sample first input page data. It is expressed in
number of GPMC functional clock cycles. From start of read cycle and after FA21 functional clock cycles, first input
page data will be internally sampled by active functional clock edge. FA21 calculation must be stored inside
AccessTime register bits field.
FA20 parameter illustrates amount of time required to internally sample successive input page data. It is expressed in
number of GPMC functional clock cycles. After each access to input page data, next input page data will be internally
sampled by active functional clock edge after FA20 functional clock cycles. FA20 is also the duration of address
phases for successive input page data (excluding first input page data). FA20 value must be stored in
PageBurstAccessTime register bits field.
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-40. GPMC and NOR Flash—Asynchronous Read—Page Mode 4x16-Bit
164
Specifications
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gpmc_fclk
gpmc_clk
FA1
gpmc_csn[x]
(A)
FA9
gpmc_a[10:1]
Valid Address
FA0
FA10
gpmc_be0n_cle
FA0
FA10
gpmc_be1n
FA3
FA12
gpmc_advn_ale
FA27
FA25
gpmc_wen
FA29
gpmc_ad[15:0]
gpmc_wait[x]
A.
Data OUT
(A)
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-41. GPMC and NOR Flash—Asynchronous Write—Single Word
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GPMC_FCLK
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(A)
gpmc_clk
FA1
FA5
gpmc_csn[x]
(B)
(C)
FA9
gpmc_a[27:17]
Address (MSB)
FA0
FA10
gpmc_be0n_cle
Valid
FA0
FA10
gpmc_be1n
Valid
FA3
FA12
gpmc_advn_ale
FA4
FA13
gpmc_oen
FA29
gpmc_ad[15:0]
gpmc_wait[x]
A.
B.
C.
FA37
Data IN
Address (LSB)
Data IN
(C)
GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally.
FA5 parameter illustrates amount of time required to internally sample input data. It is expressed in number of GPMC
functional clock cycles. From start of read cycle and after FA5 functional clock cycles, input data will be internally
sampled by active functional clock edge. FA5 value must be stored inside AccessTime register bits field.
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-42. GPMC and Multiplexed NOR Flash—Asynchronous Read—Single Word
166
Specifications
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gpmc_fclk
gpmc_clk
FA1
gpmc_csn[x]
(A)
FA9
gpmc_a[27:17]
Address (MSB)
FA0
FA10
gpmc_be0n_cle
FA0
FA10
gpmc_be1n
FA3
FA12
gpmc_advn_ale
FA27
FA25
gpmc_wen
FA29
gpmc_ad[15:0]
gpmc_wait[x]
A.
FA28
Valid Address (LSB)
Data OUT
(A)
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-43. GPMC and Multiplexed NOR Flash—Asynchronous Write—Single Word
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5.13.8.1.3 GPMC and NAND Flash—Asynchronous Mode
Table 5-46 and Table 5-47 assume testing over the recommended operating conditions and electrical
characteristic conditions below (see Figure 5-44 through Figure 5-47).
Table 5-45. GPMC and NAND Flash Timing Conditions—Asynchronous Mode
TIMING CONDITION PARAMETER
MIN
TYP
MAX
UNIT
Input Conditions
tR
Input signal rise time
0.3
1.8
ns
tF
Input signal fall time
0.3
1.8
ns
3
30
pF
Output Condition
CLOAD
Output load capacitance
Table 5-46. GPMC and NAND Flash Internal Timing Parameters—Asynchronous Mode(1)(2)
OPP100
NO.
MIN
OPP50
MAX
MIN
MAX
UNIT
GNFI1
Delay time, output data gpmc_ad[15:0] generation from internal
functional clock GPMC_FCLK(3)
6.5
6.5
ns
GNFI2
Delay time, input data gpmc_ad[15:0] capture from internal functional
clock GPMC_FCLK(3)
4.0
4.0
ns
GNFI3
Delay time, output chip select gpmc_csn[x] generation from internal
functional clock GPMC_FCLK(3)
6.5
6.5
ns
GNFI4
Delay time, output address valid and address latch enable
gpmc_advn_ale generation from internal functional clock
GPMC_FCLK(3)
6.5
6.5
ns
GNFI5
Delay time, output lower-byte enable and command latch enable
gpmc_be0n_cle generation from internal functional clock
GPMC_FCLK(3)
6.5
6.5
ns
GNFI6
Delay time, output enable gpmc_oen generation from internal functional
clock GPMC_FCLK(3)
6.5
6.5
ns
GNFI7
Delay time, output write enable gpmc_wen generation from internal
functional clock GPMC_FCLK(3)
6.5
6.5
ns
GNFI8
Skew, functional clock GPMC_FCLK(3)
100
100
ps
(1) Internal parameters table must be used to calculate data access time stored in the corresponding CS register bit field.
(2) Internal parameters are referred to the GPMC functional internal clock which is not provided externally.
(3) GPMC_FCLK is general-purpose memory controller internal functional clock.
Table 5-47. GPMC and NAND Flash Timing Requirements—Asynchronous Mode
OPP100
NO.
GNF12(1)
MIN
tacc(d)
OPP50
MAX
J(2)
Access time, input data gpmc_ad[15:0]
MIN
MAX
J(2)
UNIT
ns
(1) The GNF12 parameter illustrates the amount of time required to internally sample input data. It is expressed in number of GPMC
functional clock cycles. From start of the read cycle and after GNF12 functional clock cycles, input data is internally sampled by the
active functional clock edge. The GNF12 value must be stored inside AccessTime register bit field.
(2) J = AccessTime × (TimeParaGranularity + 1) × GPMC_FCLK(3)
(3) GPMC_FCLK is general-purpose memory controller internal functional clock period in ns.
168
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Table 5-48. GPMC and NAND Flash Switching Characteristics—Asynchronous Mode
NO.
OPP100
PARAMETER
MIN
OPP50
MAX
MIN
MAX
UNIT
tR(d)
Rise time, output data gpmc_ad[15:0]
2
2
ns
tF(d)
Fall time, output data gpmc_ad[15:0]
2
2
ns
GNF0
tw(wenV)
Pulse duration, output write enable gpmc_wen
valid
GNF1
td(csnV-wenV)
Delay time, output chip select gpmc_csn[x](2)
valid to output write enable gpmc_wen valid
B(3) - 0.2
B(3) + 2.0
B(3) - 0.2
B(3) + 2.0
ns
GNF2
tw(cleH-wenV)
Delay time, output lower-byte enable and
command latch enable gpmc_be0n_cle high to
output write enable gpmc_wen valid
C(4) - 0.2
C(4) + 2.0
C(4) - 0.2
C(4) + 2.0
ns
GNF3
tw(wenV-dV)
Delay time, output data gpmc_ad[15:0] valid to
output write enable gpmc_wen valid
D(5) - 0.2
D(5) + 2.8
D(5) - 0.2
D(5) + 2.0
ns
GNF4
tw(wenIV-dIV)
Delay time, output write enable gpmc_wen
invalid to output data gpmc_ad[15:0] invalid
E(6) - 0.2
E(6) + 2.8
E(6) - 0.2
E(6) + 2.0
ns
GNF5
tw(wenIV-cleIV)
Delay time, output write enable gpmc_wen
invalid to output lower-byte enable and command
latch enable gpmc_be0n_cle invalid
F(7) - 0.2
F(7) + 2.0
F(7) - 0.2
F(7) + 2.0
ns
GNF6
tw(wenIV-csnIV)
Delay time, output write enable gpmc_wen
invalid to output chip select gpmc_csn[x](2)
invalid
G(8) - 0.2
G(8) + 2.0
G(8) - 0.2
G(8) + 2.0
ns
GNF7
tw(aleH-wenV)
Delay time, output address valid and address
latch enable gpmc_advn_ale high to output write
enable gpmc_wen valid
C(4) - 0.2
C(4) + 2.0
C(4) - 0.2
C(4) + 2.0
ns
GNF8
tw(wenIV-aleIV)
Delay time, output write enable gpmc_wen
invalid to output address valid and address latch
enable gpmc_advn_ale invalid
F(7) - 0.2
F(7) + 2.0
F(7) - 0.2
F(7) + 2.0
ns
GNF9
tc(wen)
Cycle time, write
H(9)
ns
(10)
(10)
(10)
(10)
+ 2.0
ns
K(11)
ns
A(1)
ns
H(9)
(2)
GNF10 td(csnV-oenV)
Delay time, output chip select gpmc_csn[x]
valid to output enable gpmc_oen valid
GNF13 tw(oenV)
Pulse duration, output enable gpmc_oen valid
GNF14 tc(oen)
Cycle time, read
GNF15 tw(oenIV-csnIV)
A(1)
Delay time, output enable gpmc_oen invalid to
output chip select gpmc_csn[x](2) invalid
I
- 0.2
I
+ 2.0
I
- 0.2
I
K(11)
L(12)
(13)
M
L(12)
(13)
- 0.2 M
+ 2.0
(13)
M
ns
(13)
- 0.2 M
+ 2.0
ns
(1) A = (WEOffTime - WEOnTime) × (TimeParaGranularity + 1) × GPMC_FCLK(14)
(2) In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
(3) B = ((WEOnTime - CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (WEExtraDelay - CSExtraDelay)) × GPMC_FCLK(14)
(4) C = ((WEOnTime - ADVOnTime) × (TimeParaGranularity + 1) + 0.5 × (WEExtraDelay - ADVExtraDelay)) × GPMC_FCLK(14)
(5) D = (WEOnTime × (TimeParaGranularity + 1) + 0.5 × WEExtraDelay) × GPMC_FCLK(14)
(6) E = ((WrCycleTime - WEOffTime) × (TimeParaGranularity + 1) - 0.5 × WEExtraDelay) × GPMC_FCLK(14)
(7) F = ((ADVWrOffTime - WEOffTime) × (TimeParaGranularity + 1) + 0.5 × (ADVExtraDelay - WEExtraDelay)) × GPMC_FCLK(14)
(8) G = ((CSWrOffTime - WEOffTime) × (TimeParaGranularity + 1) + 0.5 × (CSExtraDelay - WEExtraDelay)) × GPMC_FCLK(14)
(9) H = WrCycleTime × (1 + TimeParaGranularity) × GPMC_FCLK(14)
(10) I = ((OEOnTime - CSOnTime) × (TimeParaGranularity + 1) + 0.5 × (OEExtraDelay - CSExtraDelay)) × GPMC_FCLK(14)
(11) K = (OEOffTime - OEOnTime) × (1 + TimeParaGranularity) × GPMC_FCLK(14)
(12) L = RdCycleTime × (1 + TimeParaGranularity) × GPMC_FCLK(14)
(13) M = ((CSRdOffTime - OEOffTime) × (TimeParaGranularity + 1) + 0.5 × (CSExtraDelay - OEExtraDelay)) × GPMC_FCLK(14)
(14) GPMC_FCLK is general-purpose memory controller internal functional clock period in ns.
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GPMC_FCLK
gpmc_csn[x]
GNF1
GNF6
GNF2
GNF5
(A)
gpmc_be0n_cle
gpmc_advn_ale
gpmc_oen
GNF0
gpmc_wen
GNF3
GNF4
gpmc_ad[15:0]
A.
Command
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
Figure 5-44. GPMC and NAND Flash—Command Latch Cycle
GPMC_FCLK
gpmc_csn[x]
GNF1
GNF6
GNF7
GNF8
(A)
gpmc_be0n_cle
gpmc_advn_ale
gpmc_oen
GNF9
GNF0
gpmc_wen
GNF3
gpmc_ad[15:0]
A.
GNF4
Address
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
Figure 5-45. GPMC and NAND Flash—Address Latch Cycle
170
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GPMC_FCLK
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(A)
GNF12
(B)
GNF10
gpmc_csn[x]
GNF15
(C)
gpmc_be0n_cle
gpmc_advn_ale
GNF14
GNF13
gpmc_oen
gpmc_ad[15:0]
gpmc_wait[x]
A.
B.
C.
DATA
(C)
GPMC_FCLK is an internal clock (GPMC functional clock) not provided externally.
GNF12 parameter illustrates amount of time required to internally sample input data. It is expressed in number of
GPMC functional clock cycles. From start of read cycle and after GNF12 functional clock cycles, input data will be
internally sampled by active functional clock edge. GNF12 value must be stored inside AccessTime register bits field.
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6. In gpmc_wait[x], x is equal to 0 or 1.
Figure 5-46. GPMC and NAND Flash—Data Read Cycle
GPMC_FCLK
GNF1
gpmc_csn[x]
GNF6
(A)
gpmc_be0n_cle
gpmc_advn_ale
gpmc_oen
GNF9
GNF0
gpmc_wen
GNF3
gpmc_ad[15:0]
A.
GNF4
DATA
In gpmc_csn[x], x is equal to 0, 1, 2, 3, 4, 5, or 6.
Figure 5-47. GPMC and NAND Flash—Data Write Cycle
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5.13.8.2 Memory Interface
The device has a dedicated interface to LPDDR2, DDR3, and DDR3L SDRAM. It supports JEDEC
standard compliant LPDDR2, DDR3, and DDR3L SDRAM devices with a 16- or 32-bit data path to
external SDRAM memory.
For more details on the LPDDR2, DDR3, and DDR3L memory interface, see the EMIF section of the
AM437x Sitara Processors Technical Reference Manual.
5.13.8.2.1 DDR3 and DDR3L Routing Guidelines
This section provides the timing specification for the DDR3 and DDR3L interface as a PCB design and
manufacturing specification. The design rules constrain PCB trace length, PCB trace skew, signal
integrity, cross-talk, and signal timing. These rules, when followed, result in a reliable DDR3 or DDR3L
memory system without the need for a complex timing closure process. For more information regarding
the guidelines, see Understanding TI’s PCB Routing Rule-Based DDR Timing Specification. This
application report provides generic guidelines and approach. All the specifications provided in the data
manual take precedence over the generic guidelines and must be adhered to for a reliable DDR3 or
DDR3L interface operation.
NOTE
All references to DDR3 in this section apply to DDR3 and DDR3L devices, unless otherwise
noted.
5.13.8.2.1.1 Board Designs
TI only supports board designs using DDR3 memory that follow the guidelines in this document. The
switching characteristics and timing diagram for the DDR3 memory interface are shown in Table 5-49 and
Figure 5-48.
Table 5-49. Switching Characteristics for DDR3 Memory Interface
NO.
1
PARAMETER
tc(DDR_CK)
tc(DDR_CKn)
Cycle time, DDR_CK and DDR_CKn
MIN
MAX
UNIT
2.5
3.3(1)
ns
(1) The JEDEC JESD79-3F Standard defines the maximum clock period of 3.3 ns for all standard-speed bin DDR3 and DDR3L memory
devices. Therefore, all standard-speed bin DDR3 and DDR3L memory devices are required to operate at 303 MHz.
1
DDR_CK
DDR_CKn
Figure 5-48. DDR3 Memory Interface Clock Timing
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5.13.8.2.1.2 DDR3 Device Combinations
Because there are several possible combinations of device counts and single-side or dual-side mounting,
Table 5-50 summarizes the supported device configurations.
Table 5-50. Supported DDR3 Device Combinations
NUMBER OF DDR3 DEVICES
DDR3 DEVICE WIDTH (BITS)
MIRRORED?
DDR3 EMIF WIDTH (BITS)
1
16
N
16
2
8
Y (1)
16
2
16
Y (1)
32
(1)
32
4
(1)
8
Y
DDR3 devices are mirrored when half of the devices are placed on the top of the board and the other half are placed on the bottom of
the board.
5.13.8.2.1.3 DDR3 Interface
5.13.8.2.1.3.1 DDR3 Interface Schematic
The DDR3 interface schematic varies, depending upon the width of the DDR3 devices used.
Figure 5-49 shows the schematic connections for 16-bit interface using one x16 DDR3 device. Figure 5-50
shows the schematic connections for 16-bit interface without using VTT termination for the ADDR_CTRL
net class signals. Figure 5-51 shows the schematic connections for 16-bit interface using two x8 DDR3
devices.
Figure 5-52 shows the schematic connections for 32-bit interface using two x16 DDR3 device and
Figure 5-53 shows the schematic connections for 32-bit interface using four x8 DDR3 devices.
When not using all or part of a DDR3 interface, the proper method of handling the unused pins is to tie off
the DDR_DQS[x] pins to the VDDS_DDR supply via a 1-kΩ resistor and pulling the DDR_DQSn[x] pins to
ground via a 1k-Ω resistor. This must be done for each byte not used. Although these signals have
internal pullup and pulldown, external pullup and pulldown provide additional protection against external
electrical noise causing activity on the signals. Also, include the 49.9-Ω pulldown for DDR_VTP. The
VDDS_DDR and DDR_VREF power supply terminals need to be connected to their respective power
supplies even if the DDR3 interface is not being used. All other DDR3 interface pins can be left
unconnected. The supported modes for use of the DDR3 EMIF are 32 bits wide, 16 bits wide, or not used.
The device can only source one load connected to the DQS[x] and DQ[x] net class signals and up to four
loads connected to the CK and ADDR_CTRL net class signals. For more information related to net
classes, see Section 5.13.8.2.1.3.9.
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16-Bit DDR3
Interface
16-Bit DDR3
Device
DDR_D15
DQU7
8
DDR_D8
DQU0
DDR_DQM1
DDR_DQS1
DDR_DQSn1
DMU
DQSU
DQSUn
DDR_D7
DQL7
8
DDR_D0
DQL0
DDR_DQM0
DDR_DQS0
DDR_DQSn0
DML
DQSL
DQSLn
DDR_CK
DDR_CKn
CK
CKn
DDR_ODT0
DDR_CSn0
DDR_BA0
DDR_BA1
DDR_BA2
Zo
VDDS_DDR
Zo
ODT
CSn
BA0
BA1
BA2
DDR_A0
0.1 µF
DDR_VTT
A0
Zo
A15
Zo
16
DDR_A15
DDR_CASn
DDR_RASn
DDR_WEn
DDR_CKE0
DDR_RESETn
ZQ
DDR_VREF
0.1 µF
CASn
RASn
WEn
CKE
RESETn
ZQ
VREFDQ
VREFCA
0.1 µF
DDR_VREF
0.1 µF
DDR_VTP
49.9 Ω
(±1%, 20 mW)
Zo
ZQ
Termination is required. See terminator comments.
Value determined according to the DDR3 memory device data sheet.
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Figure 5-49. 16-Bit DDR3 Interface Using One 16-Bit DDR3 Device With VTT Termination
174
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16-Bit DDR3
Interface
16-Bit DDR3
Device
DDR_D15
DQU7
8
DDR_D8
DQU0
DDR_DQM1
DDR_DQS1
DDR_DQSn1
DMU
DQSU
DQSUn
DDR_D7
DQL7
8
DDR_D0
DQL0
DDR_DQM0
DDR_DQS0
DDR_DQSn0
DML
DQSL
DQSLn
DDR_CK
DDR_CKn
CK
CKn
DDR_ODT0
DDR_CSn0
DDR_BA0
DDR_BA1
DDR_BA2
ODT
CSn
BA0
BA1
BA2
DDR_A0
A0
16
DDR_A15
A15
DDR_CASn
DDR_RASn
DDR_WEn
DDR_CKE0
DDR_RESETn
ZQ
DDR_VREF
0.1 µF
CASn
RASn
WEn
CKE
RESETn
ZQ
VREFDQ
VREFCA
0.1 µF
VDDS_DDR
0.1 µF
(A)
1 K Ω 1%
DDR_VREF
0.1 µF
1 K Ω 1%
DDR_VTP
49.9 Ω
(±1%, 20 mW)
ZQ
Value determined according to the DDR3 memory device data sheet.
Copyright © 2016, Texas Instruments Incorporated
A.
VDDS_DDR is the power supply for the DDR3 memories and the DDR3 interface.
Figure 5-50. 16-Bit DDR3 Interface Using One 16-Bit DDR3 Device Without VTT Termination
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16-Bit DDR3
Interface
8-Bit DDR3
Devices
DDR_D15
DQ7
8
DDR_D8
DQ0
DDR_DQM1
NC
DDR_DQS1
DDR_DQSn1
DDR_D7
DM/TDQS
TDQSn
DQS
DQSn
DQ7
8
DDR_D0
DQ0
DDR_DQM0
NC
DDR_DQS0
DDR_DQSn0
DDR_CK
DDR_CKn
DDR_ODT0
DDR_CSn0
DDR_BA0
DDR_BA1
DDR_BA2
DDR_A0
DM/TDQS
TDQSn
DQS
DQSn
Zo
CK
CKn
CK
CKn
ODT
CSn
BA0
BA1
BA2
ODT
CSn
BA0
BA1
BA2
A0
A0
Zo
A15
A15
Zo
CASn
RASn
WEn
CKE
RESETn
ZQ
VREFDQ
VREFCA
CASn
RASn
WEn
CKE
RESETn
ZQ
VREFDQ
VREFCA
0.1 µF
VDDS_DDR
Zo
DDR_VTT
16
DDR_A15
DDR_CASn
DDR_RASn
DDR_WEn
DDR_CKE0
DDR_RESETn
ZQ
DDR_VREF
0.1 µF
0.1 µF
DDR_VREF
ZQ
0.1 µF
0.1 µF
DDR_VTP
49.9 Ω
(±1%, 20 mW)
Zo
ZQ
Termination is required. See terminator comments.
Value determined according to the DDR3 memory device data sheet.
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Figure 5-51. 16-Bit DDR3 Interface Using Two 8-Bit DDR3 Devices With VTT Termination
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32-bit DDR3 EMIF
DDR_CKE1
DDR_ODT1
DDR_CSn1
NC
NC
NC
16-Bit DDR3
Devices
DDR_D31
DQU7
8
DDR_D24
DQU0
DDR_DQM3
DDR_DQS3
DDR_DQSn3
DMU
DQSU
DQSUn
DDR_D23
DQL7
8
DDR_D16
DQL0
DDR_DQM2
DDR_DQS2
DDR_DQSn2
DML
DQSL
DQSLn
DDR_D15
DQU7
8
DDR_D8
DQU0
DDR_DQM1
DDR_DQS1
DDR_DQSn1
DMU
DQSU
DQSUn
DDR_D7
DQL7
8
DDR_D0
DQL0
DDR_DQM0
DDR_DQS0
DDR_DQSn0
DML
DQSL
DQSLn
DDR_CLK
DDR_CLKn
DDR_ODT0
DDR_CSn0
DDR_BA0
DDR_BA1
DDR_BA2
DDR_A0
Zo
CK
CKn
CK
CKn
ODT
CSn
BA0
BA1
BA2
ODT
CSn
BA0
BA1
BA2
A0
A0
Zo
A15
A15
Zo
CASn
RASn
WEn
CKE
RSTn
ZQ
VREFDQ
VREFCA
CASn
RASn
WEn
CKE
RSTn
0.1 µF
VDDS_DDR
Zo
DDR_VTT
16
DDR_A15
DDR_CASn
DDR_RASn
DDR_WEn
DDR_CKE0
DDR_RESETn
ZQ
DDR_VREF
0.1 µF
0.1 µF
DDR_VREF
ZQ
VREFDQ
VREFCA
ZQ
0.1 µF
DDR_VTP
49.9 Ω (±1% 20mW)
Zo
ZQ
Termination is required. See terminator comments.
Value determined according to the DDR memory device data sheet.
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Figure 5-52. 32-Bit DDR3 Interface Using Two 16-Bit DDR3 Devices With VTT Termination
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32-bit DDR3 EMIF
DDR_CKE1
DDR_ODT1
DDR_CSn1
NC
NC
NC
8-Bit DDR3
Devices
8-Bit DDR3
Devices
DDR_D31
DQ7
8
DDR_D24
DQ0
DDR_DQM3
NC
DDR_DQS3
DDR_DQSn3
DDR_D23
DM/TQS
TDQSn
DQS
DQSn
DQ7
8
DDR_D16
DQ0
DDR_DQM2
NC
DDR_DQS2
DDR_DQSn2
DDR_D15
DM/TQS
TDQSn
DQS
DQSn
DQ7
8
DDR_D8
DQ0
DDR_DQM1
NC
DDR_DQS1
DDR_DQSn1
DDR_D7
DM/TQS
TDQSn
DQS
DQSn
DQ7
8
DDR_D0
DQ0
DDR_DQM0
NC
DDR_DQS0
DDR_DQSn0
DM/TQS
TDQSn
DQS
DQSn
Zo
DDR_CLK
DDR_CLKn
CK
CKn
CK
CKn
CK
CKn
CK
CKn
DDR_ODT0
DDR_CSn0
DDR_BA0
DDR_BA1
DDR_BA2
ODT
CSn
BA0
BA1
BA2
ODT
CSn
BA0
BA1
BA2
ODT
CSn
BA0
BA1
BA2
ODT
CSn
BA0
BA1
BA2
DDR_A0
A0
A0
A0
A15
A15
CASn
RASn
WEn
CKE
RSTn
ZQ
VREFDQ
VREFCA
CASn
RASn
WEn
CKE
RSTn
A15
CASn
RASn
WEn
CKE
RSTn
ZQ
VREFDQ
VREFCA
0.1 µF
VDDS_DDR
Zo
DDR_VTT
A0
Zo
A15
Zo
16
DDR_A15
DDR_CASn
DDR_RASn
DDR_WEn
DDR_CKE0
DDR_RESETn
ZQ
DDR_VREF
0.1 µF
0.1 µF
ZQ
VREFDQ
VREFCA
0.1 µF
ZQ
ZQ
CASn
RASn
WEn
CKE
RSTn
ZQ
VREFDQ
VREFCA
DDR_VREF
ZQ
0.1 µF
0.1 µF
DDR_VTP
49.9 Ω (±1% 20mW)
Zo
ZQ
Termination is required. See terminator comments.
Value determined according to the DDR memory device data sheet.
Copyright © 2016, Texas Instruments Incorporated
Figure 5-53. 32-Bit DDR3 Interface Using Four 8-Bit DDR3 Devices With VTT Termination
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5.13.8.2.1.3.2 Compatible JEDEC DDR3 Devices
Table 5-51 shows the parameters of the JEDEC DDR3 devices that are compatible with this interface.
Table 5-51. Compatible JEDEC DDR3 Devices (Per Interface)
NO.
PARAMETER
1
JEDEC DDR3 device speed grade
2
JEDEC DDR3 device bit width
3
CONDITION
MIN
tC(DDR_CK) and
tC(DDR_CKn) = 2.5ns
MAX
UNIT
DDR3-1600
x8
x32
1
4
(1)
JEDEC DDR3 device count
Devices
(1) For valid DDR3 device configurations and device counts, see Section 5.13.8.2.1.3.1, Figure 5-49, and Figure 5-51.
5.13.8.2.1.3.3 DDR3 PCB Stackup
The minimum stackup for routing the DDR3 interface is a four-layer stack up as shown in Table 5-52.
Additional layers may be added to the PCB stackup to accommodate other circuitry, enhance signal
integrity and electromagnetic interference performance, or to reduce the size of the PCB footprint.
Table 5-52. Minimum PCB Stackup(1)
LAYER
TYPE
DESCRIPTION
1
Signal
Top signal routing
2
Plane
Ground
3
Plane
Split Power Plane
4
Signal
Bottom signal routing
(1) All signals that have critical signal integrity requirements should be routed first on layer 1. It may not be possible to route all of these
signals on layer 1 which requires some to be routed on layer 4. When this is done, the signal routes on layer 4 should not cross splits in
the power plane.
Table 5-53. PCB Stackup Specifications(1)
NO.
PARAMETER
MIN
1
PCB routing and plane layers
4
2
Signal routing layers
2
3
Full ground reference layers under DDR3 routing region(2)
1
4
Full VDDS_DDR power reference layers under the DDR3 routing region(2)
TYP
MAX
UNIT
1
(3)
5
Number of reference plane cuts allowed within DDR3 routing region
6
Number of layers between DDR3 routing layer and reference plane(4)
7
PCB routing feature size
8
PCB trace width, w
9
PCB BGA escape via pad size(5)
18
10
PCB BGA escape via hole size
10
13
Single-ended impedance, Zo(6)
50
75
Ω
Zo
Zo+5
Ω
14
0
0
4
mils
4
(7)(8)
Impedance control
Zo-5
mils
20
mils
mils
(1) For the DDR3 device BGA pad size, see the DDR3 device manufacturer documentation.
(2) Ground reference layers are preferred over power reference layers. Be sure to include bypass caps to accommodate reference layer
return current as the trace routes switch routing layers.
(3) No traces should cross reference plane cuts within the DDR3 routing region. High-speed signal traces crossing reference plane cuts
create large return current paths which can lead to excessive crosstalk and EMI radiation.
(4) Reference planes are to be directly adjacent to the signal plane to minimize the size of the return current loop.
(5) An 18-mil pad assumes Via Channel is the most economical BGA escape. A 20-mil pad may be used if additional layers are available
for power routing. An 18-mil pad is required for minimum layer count escape.
(6) Zo is the nominal singled-ended impedance selected for the PCB.
(7) This parameter specifies the AC characteristic impedance tolerance for each segment of a PCB signal trace relative to the chosen Zo
defined by the single-ended impedance parameter.
(8) Tighter impedance control is required to ensure flight time skew is minimal.
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5.13.8.2.1.3.4 DDR3 Placement
Figure 5-54 shows the required placement for the device as well as the DDR3 devices. The dimensions
for this figure are defined in Table 5-54. The placement does not restrict the side of the PCB on which the
devices are mounted. The ultimate purpose of the placement is to limit the maximum trace lengths and
allow for proper routing space.
X1
X2
X2
X2
DDR3
Controller
Y
Figure 5-54. Placement Specifications
Table 5-54. Placement Specifications(1)
NO.
PARAMETER
1
X1(2)(3)(4)
2
X2
(2)(3)
3
Y Offset(2)(3)(4)
4
Clearance from non-DDR3 signal to DDR3 keepout region(5)(6)
MIN
4
MAX
UNIT
1000
mils
600
mils
1500
mils
w
(1) DDR3 keepout region to encompass entire DDR3 routing area.
(2) For dimension definitions, see Figure 5-54.
(3) Measurements from center of device to center of DDR3 device.
(4) Minimizing X1 and Y improves timing margins.
(5) w is defined as the signal trace width.
(6) Non-DDR3 signals allowed within DDR3 keepout region provided they are separated from DDR3 routing layers by a ground plane.
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5.13.8.2.1.3.5 DDR3 Keepout Region
The region of the PCB used for DDR3 circuitry must be isolated from other signals. The DDR3 keepout
region is defined for this purpose and is shown in Figure 5-55. This region should encompass all DDR3
circuitry and the region size varies with component placement and DDR3 routing. Additional clearances
required for the keepout region are shown in Table 5-54. Non-DDR3 signals should not be routed on the
same signal layer as DDR3 signals within the DDR3 keepout region. Non-DDR3 signals may be routed in
the region provided they are routed on layers separated from DDR3 signal layers by a ground layer. No
breaks should be allowed in the reference ground or VDDS_DDR power plane in this region. In addition,
the VDDS_DDR power plane should cover the entire keepout region.
DDR3 Controller
DDR3 Keepout Region
Encompasses Entire DDR3 Routing Area
Figure 5-55. DDR3 Keepout Region
5.13.8.2.1.3.6 DDR3 Bulk Bypass Capacitors
Bulk bypass capacitors are required for moderate speed bypassing of the DDR3 and other circuitry.
Table 5-55 contains the minimum numbers and capacitance required for the bulk bypass capacitors. Note
that this table only covers the bypass needs of the DDR3 interface and DDR3 devices. Additional bulk
bypass capacitance may be needed for other circuitry.
Table 5-55. Bulk Bypass Capacitors(1)
NO.
PARAMETER
MIN
UNIT
1
VDDS_DDR bulk bypass capacitor count
2
VDDS_DDR bulk bypass total capacitance
3
DDR3#1 bulk bypass capacitor count
4
DDR3#1 bulk bypass total capacitance
20
μF
5
DDR3#2 bulk bypass capacitor count(2)
2
Devices
6
DDR3#2 bulk bypass total capacitance(2)
20
μF
2
Devices
(3)
7
DDR3#3 bulk bypass capacitor count
8
DDR3#3 bulk bypass total capacitance(3)
9
DDR3#4bulk bypass capacitor count(3)
10
DDR3#4 bulk bypass total capacitance(3)
2
MAX
Devices
20
μF
2
Devices
20
μF
2
Devices
20
μF
(1) These devices should be placed near the devices they are bypassing, but preference should be given to the placement of the highspeed (HS) bypass capacitors and DDR3 signal routing.
(2) Only used when two DDR3 devices are used.
(3) Only used when four DDR3 devices are used.
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5.13.8.2.1.3.7 DDR3 High-Speed Bypass Capacitors
High-speed (HS) bypass capacitors are critical for proper DDR3 interface operation. It is particularly
important to minimize the parasitic series inductance of the HS bypass capacitors, device DDR3 power,
and device DDR3 ground connections. Table 5-56 contains the specification for the HS bypass capacitors
as well as for the power connections on the PCB. Generally speaking, it is good to:
1. Fit as many HS bypass capacitors as possible.
2. Minimize the distance from the bypass cap to the power terminals being bypassed.
3. Use the smallest physical sized capacitors possible with the highest capacitance readily available.
4. Connect the bypass capacitor pads to their vias using the widest traces possible and using the largest
hole size via possible.
5. Minimize via sharing. Note the limites on via sharing shown in Table 5-56.
Table 5-56. High-Speed Bypass Capacitors
NO.
PARAMETER
MIN
(1)
1
HS bypass capacitor package size
2
Distance, HS bypass capacitor to VDDS_DDR and VSS terminal being
bypassed(2)(3)(4)
3
VDDS_DDR HS bypass capacitor count
4
VDDS_DDR HS bypass capacitor total capacitance
5
Trace length from VDDS_DDR and VSS terminal to connection via(2)
6
Distance, HS bypass capacitor to DDR3 device being bypassed(5)
TYP
MAX
UNIT
0201
0402
10 mils
400
mils
20
(6)
7
DDR3 device HS bypass capacitor count
8
DDR3 device HS bypass capacitor total capacitance(6)
9
Number of connection vias for each HS bypass capacitor(7)(8)
10
Trace length from bypass capacitor connect to connection via(2)(8)
11
Number of connection vias for each DDR3 device power and ground
terminal(9)
12
Trace length from DDR3 device power and ground terminal to connection
via(2)(7)
Devices
μF
1
35
70
mils
150
mils
12
Devices
μF
0.85
2
Vias
35
100
1
mils
Vias
35
60
mils
(1) LxW, 10-mil units; for example, a 0402 is a 40x20-mil surface-mount capacitor.
(2) Closer and shorter is better.
(3) Measured from the nearest VDDS_DDR and ground terminal to the center of the capacitor package.
(4) Three of these capacitors should be underneath the device, between the cluster of VDDS_DDR and ground terminals, between the
DDR3 interfaces on the package.
(5) Measured from the DDR3 device power and ground terminal to the center of the capacitor package.
(6) Per DDR3 device.
(7) An additional HS bypass capacitor can share the connection vias only if it is mounted on the opposite side of the board. No sharing of
vias is permitted on the same side of the board.
(8) An HS bypass capacitor may share a via with a DDR3 device mounted on the same side of the PCB. A wide trace should be used for
the connection and the length from the capacitor pad to the DDR3 device pad should be less than 150 mils.
(9) Up to two pairs of DDR3 power and ground terminals may share a via.
5.13.8.2.1.3.8 Return Current Bypass Capacitors
Use additional bypass capacitors if the return current reference plane changes due to DDR3 signals
hopping from one signal layer to another. The bypass capacitor here provides a path for the return current
to hop planes along with the signal. As many of these return current bypass capacitors should be used as
possible. Because these are returns for signal current, the signal via size may be used for these
capacitors.
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5.13.8.2.1.3.9 DDR3 Net Classes
Table 5-57 lists the clock net classes for the DDR3 interface. Table 5-58 lists the signal net classes, and
associated clock net classes, for signals in the DDR3 interface. These net classes are used for the
termination and routing rules that follow.
Table 5-57. Clock Net Class Definitions
CLOCK NET CLASS
CK
PIN NAMES
DDR_CK and DDR_CKn
DQS0
DDR_DQS0 and DDR_DQSn0
DQS1
DDR_DQS1 and DDR_DQSn1
DQS2
DDR_DQS2 and DDR_DQSn2
DQS3
DDR_DQS3 and DDR_DQSn3
Table 5-58. Signal Net Class Definitions
SIGNAL NET CLASS
ASSOCIATED CLOCK
NET CLASS
ADDR_CTRL
CK
DQ0
DQS0
DDR_D[7:0], DDR_DQM0
DQ1
DQS1
DDR_D[15:8], DDR_DQM1
DQ2
DQS2
DDR_D[23:16], DDR_DQM2
DQ3
DQS3
DDR_D[31:24], DDR_DQM3
PIN NAMES
DDR_BA[2:0], DDR_A[15:0], DDR_CSn0, DDR_CSn1, DDR_CASn,
DDR_RASn, DDR_WEn, DDR_CKE0, DDR_CKE1, DDR_ODT0,
DDR_ODT1
5.13.8.2.1.3.10 DDR3 Signal Termination
Signal terminations are required for the CK and ADDR_CTRL net class signals. On-device terminations
(ODTs) are required on the DQS[x] and DQ[x] net class signals. Detailed termination specifications are
covered in the routing rules in the following sections.
Figure 5-50 provides an example DDR3 schematic with one 16-bit DDR3 memory device that does not
have VTT termination on the address and control signals. A typical DDR3 point-to-point topology may
provide acceptable signal integrity without VTT termination. System performance should be verified by
performing signal integrity analysis using specific PCB design details before implementing this topology.
5.13.8.2.1.3.11 DDR3 DDR_VREF Routing
DDR_VREF is used as a reference by the input buffers of the DDR3 memories as well as the device.
DDR_VREF is intended to be half the DDR3 power supply voltage and is typically generated with a
voltage divider connected to the VDDS_DDR power supply. It should be routed as a nominal 20-mil wide
trace with 0.1 µF bypass capacitors near each device connection. Narrowing of DDR_VREF is allowed to
accommodate routing congestion.
5.13.8.2.1.3.12 DDR3 VTT
Like DDR_VREF, the nominal value of the VTT supply is half the DDR3 supply voltage. Unlike
DDR_VREF, VTT is expected to source and sink current, specifically the termination current for the
ADDR_CTRL net class Thevinen terminators. VTT is needed at the end of the address bus and it should
be routed as a power subplane. VTT should be bypassed near the terminator resistors.
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5.13.8.2.1.4 DDR3 CK and ADDR_CTRL Topologies and Routing Definition
The CK and ADDR_CTRL net classes are routed similarly and are length matched to minimize skew
between them. CK is a bit more complicated because it runs at a higher transition rate and is differential.
The following subsections show the topology and routing for various DDR3 configurations for CK and
ADDR_CTRL. The figures in the following subsections define the terms for the routing specification
detailed in Table 5-59.
5.13.8.2.1.4.1 Using Two DDR3 Devices (x8 or x16)
Two DDR3 devices are supported on the DDR3 interface consisting of two x8 DDR3 devices arranged as
one 16-bit bank or two x16 DDR3 devices arranged as one 32-bit bank. These two devices may be
mounted on one side of the PCB, or may be mirrored in a pair to save board space at a cost of increased
routing complexity and parts on the backside of the PCB.
5.13.8.2.1.4.2 CK and ADDR_CTRL Topologies, Two DDR3 Devices
Figure 5-56 shows the topology of the CK net classes and Figure 5-57 shows the topology for the
corresponding ADDR_CTRL net classes.
+ –
+ –
AS+
AS-
AS+
AS-
DDR3 Differential CK Input Buffers
Clock Parallel
Terminator
VDDS_DDR
Rcp
A1
Device
Differential Clock
Output Buffer
A2
A3
AT
Cac
+
–
Rcp
A1
A2
A3
0.1 µF
AT
Routed as Differential Pair
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
Figure 5-56. CK Topology for Two DDR3 Devices
Device
Address and Control
Output Buffer
A1
A2
AS
AS
DDR3 Address and Control Input Buffers
A3
Address and Control
Terminator
Rtt
Vtt
AT
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
Figure 5-57. ADDR_CTRL Topology for Two DDR3 Devices
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5.13.8.2.1.4.3 CK and ADDR_CTRL Routing, Two DDR3 Devices
A1
A1
Figure 5-58 shows the CK routing for two DDR3 devices placed on the same side of the PCB. Figure 5-59
shows the corresponding ADDR_CTRL routing.
VDDS_DDR
A3
A3
=
Rcp
Cac
Rcp
0.1 µF
AT
AT
AS+
AS-
A2
A2
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
A1
Figure 5-58. CK Routing for Two Single-Side DDR3 Devices
Rtt
A3
=
AT
Vtt
AS
A2
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
Figure 5-59. ADDR_CTRL Routing for Two Single-Side DDR3 Devices
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A1
A1
To save PCB space, the two DDR3 memories may be mounted as a mirrored pair at a cost of increased
routing and assembly complexity. Figure 5-60 and Figure 5-61 show the routing for CK and ADDR_CTRL,
respectively, for two DDR3 devices mirrored in a single-pair configuration.
VDDS_DDR
A3
A3
=
Rcp
Cac
Rcp
0.1 µF
AT
AT
AS+
AS-
A2
A2
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
A1
Figure 5-60. CK Routing for Two Mirrored DDR3 Devices
Rtt
=
AT
Vtt
AS
A3
A2
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
Figure 5-61. ADDR_CTRL Routing for Two Mirrored DDR3 Devices
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5.13.8.2.1.4.4 Using Four 8-Bit DDR3 Devices
Two DDR3 devices are supported on the DDR3 interface consisting of four x8 DDR3 devices arranged as
one 32-bit bank. These four devices may be mounted on one side of the PCB, or may be mirrored in pairs
to save board space at a cost of increased routing complexity and parts on the backside of the PCB.
5.13.8.2.1.4.5 CK and ADDR_CTRL Topologies, Four DDR3 Devices
Figure 5-62 shows the topology of the CK net classes and Figure 5-63 shows the topology for the
corresponding ADDR_CTRL net classes.
+ –
+ –
+ –
+ –
AS+
AS-
AS+
AS-
AS+
AS-
AS+
AS-
DDR Differential CK Input Buffers
Clock Parallel
Terminator
VDDS_DDR
Rcp
A1
Device
Differential Clock
Output Buffer
A2
A3
A3
A4
AT
Cac
+
–
Rcp
A1
A2
A3
A3
A4
0.1 µF
AT
Routed as Differential Pair
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
Figure 5-62. CK Topology for Four DDR3 Devices
Device
Address and Control
Output Buffer
A1
A2
A3
A4
AS
AS
AS
AS
DDR Address and Control Input Buffers
A3
Address and Control
Terminator
Rtt
Vtt
AT
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
Figure 5-63. ADDR_CTRL Topology for Four DDR3 Devices
5.13.8.2.1.4.6 CK and ADDR_CTRL Routing, Four DDR3 Devices
Figure 5-64 shows the CK routing for four DDR3 devices placed on the same side of the PCB. Figure 5-65
shows the corresponding ADDR_CTRL routing.
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A1
A1
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VDDS_DDR
A3
A3
=
A3
A3
A4
A4
Rcp
Cac
Rcp
0.1 µF
AT
AT
AS+
AS-
A2
A2
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
A1
Figure 5-64. CK Routing for Four Single-Side DDR3 Devices
Rtt
A3
=
A4
A3
AT
Vtt
AS
A2
NOTE: For routing definitions, see Table 5-59, CK and ADDR_CTRL Routing Specification.
Figure 5-65. ADDR_CTRL Routing for Four Single-Side DDR3 Devices
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A1
A1
To save PCB space, the four DDR3 memories may be mounted as a mirrored pair at a cost of increased
routing and assembly complexity. Figure 5-66 and Figure 5-67 show the routing for CK and ADDR_CTRL,
respectively, for four DDR3 devices mirrored in a single-pair configuration.
VDDS_DDR
A3
A3
=
A3
A3
A4
A4
Rcp
Cac
Rcp
0.1 µF
AT
AT
AS+
AS-
A2
A2
A1
Figure 5-66. CK Routing for Four Mirrored DDR3 Devices
Rtt
=
A4
A3
AT
Vtt
AS
A3
A2
Figure 5-67. ADDR_CTRL Routing for Four Mirrored DDR3 Devices
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5.13.8.2.1.4.7 One 16-Bit DDR3 Device
One DDR3 device is supported on the DDR3 interface consisting of one x16 DDR3 device arranged as
one 16-bit bank.
5.13.8.2.1.4.8 CK and ADDR_CTRL Topologies, One DDR3 Device
Figure 5-68 shows the topology of the CK net classes and Figure 5-69 shows the topology for the
corresponding ADDR_CTRL net classes.
DDR3 Differential CK Input Buffer
AS+
AS-
+ –
Clock Parallel
Terminator
VDDS_DDR
Rcp
A1
Device
Differential Clock
Output Buffer
A2
AT
Cac
+
–
Rcp
A1
A2
0.1 µF
AT
Routed as Differential Pair
Figure 5-68. CK Topology for One DDR3 Device
AS
DDR3 Address and Control Input Buffers
Device
Address and Control
Output Buffer
A1
A2
Address and Control
Terminator
Rtt
AT
Vtt
Figure 5-69. ADDR_CTRL Topology for One DDR3 Device
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5.13.8.2.1.4.9 CK and ADDR_CTRL Routing, One DDR3 Device
A1
A1
Figure 5-70 shows the CK routing for one DDR3 device. Figure 5-71 shows the corresponding
ADDR_CTRL routing.
VDDS_DDR
Rcp
Cac
Rcp
0.1 µF
AT
AT
=
AS+
AS-
A2
A2
A1
Figure 5-70. CK Routing for One DDR3 Device
Rtt
AT
=
Vtt
AS
A2
Figure 5-71. ADDR_CTRL Routing for One DDR3 Device
5.13.8.2.1.5 Data Topologies and Routing Definition
No matter the number of DDR3 devices used, the data line topology is always point to point, so its
definition is simple.
5.13.8.2.1.5.1 DQS[x] and DQ[x] Topologies, Any Number of Allowed DDR3 Devices
DQS[x] lines are point-to-point differential, and DQ[x] lines are point-to-point singled ended. Figure 5-72
and Figure 5-73 show these topologies.
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Device
DQS[x]
IO Buffer
DDR3
DQS[x]
IO Buffer
DQS[x]+
DQS[x]Routed Differentially
x = 0, 1, 2, 3
Figure 5-72. DQS[x] Topology
Device
DQ[x]
IO Buffer
DDR3
DQ[x]
IO Buffer
DQ[x]
x = 0, 1, 2, 3
Figure 5-73. DQ[x] Topology
5.13.8.2.1.5.2 DQS[x] and DQ[x] Routing, Any Number of Allowed DDR3 Devices
Figure 5-74 and Figure 5-75 show the DQS[x] and DQ[x] routing.
DQS[x]+
DQS[x]-
DQS[x]
Routed Differentially
x = 0, 1, 2, 3
Figure 5-74. DQS[x] Routing With Any Number of Allowed DDR3 Devices
DQ[x]
x = 0, 1, 2, 3
Figure 5-75. DQ[x] Routing With Any Number of Allowed DDR3 Devices
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5.13.8.2.1.6 Routing Specification
5.13.8.2.1.6.1 CK and ADDR_CTRL Routing Specification
Skew within the CK and ADDR_CTRL net classes directly reduces setup and hold margin and, thus, this
skew must be controlled. The only way to practically match lengths on a PCB is to lengthen the shorter
traces up to the length of the longest net in the net class and its associated clock. A metric to establish
this maximum length is Manhattan distance. The Manhattan distance between two points on a PCB is the
length between the points when connecting them only with horizontal or vertical segments. A reasonable
trace route length is to within a percentage of its Manhattan distance. CACLM is defined as Clock Address
Control Longest Manhattan distance.
Given the clock and address pin locations on the device and the DDR3 memories, the maximum possible
Manhattan distance can be determined given the placement. Figure 5-76 shows this distance for two
loads. It is from this distance that the specifications on the lengths of the transmission lines for the
address bus are determined. CACLM is determined similarly for other address bus configurations; that is,
it is based on the longest net of the CK and ADDR_CTRL net class. For CK and ADDR_CTRL routing,
these specifications are contained in Table 5-59.
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(A)
A1
A8
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CACLMY
CACLMX
A8
(A)
A8
(A)
Rtt
A3
=
Vtt
(A)
A1
A8
AT
AS
A2
CACLMY
CACLMX
A8
(A)
A8
(A)
A8
(A)
A8
(A)
Rtt
A3
=
A.
A4
A3
AT
Vtt
AS
A2
It is very likely that the longest CK and ADDR_CTRL Manhattan distance will be for Address Input 8 (A8) on the
DDR3 memories. CACLM is based on the longest Manhattan distance due to the device placement. Verify the net
class that satisfies this criteria and use as the baseline for CK and ADDR_CTRL skew matching and length control.
The length of shorter CK and ADDR_CTRL stubs as well as the length of the terminator stub are not included in this
length calculation. Nonincluded lengths are grayed out in the figure.
Assuming A8 is the longest, CACLM = CACLMY + CACLMX + 300 mils.
The extra 300 mils allows for routing down lower than the DDR3 memories and returning up to reach A8.
Figure 5-76. CACLM for Two or Four Address Loads on One Side of PCB
Table 5-59. CK and ADDR_CTRL Routing Specification(1)(2)(3)
NO.
PARAMETER
MIN
TYP
MAX
UNIT
2500
mils
25
mils
660
mils
1
A1+A2 length
2
A1+A2 skew
3
A3 length
4
A3 skew(4)
25
mils
5
(5)
125
mils
194
A3 skew
Specifications
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Table 5-59. CK and ADDR_CTRL Routing Specification(1)(2)(3) (continued)
NO.
PARAMETER
MAX
UNIT
660
mils
A4 skew
25
mils
AS length
100
mils
9
AS skew
25
mils
10
AS+ and AS- length
70
mils
11
AS+ and AS- skew
5
mils
12
AT length(6)
6
A4 length
7
8
MIN
TYP
500
(7)
13
AT skew
14
AT skew(8)
15
CK and ADDR_CTRL nominal trace length(9)
16
Center-to-center CK to other DDR3 trace spacing(10)
mils
100
CACLM-50
(10)(11)
CACLM
mils
5
mils
CACLM+50
mils
4
w
4
w
3
w
17
Center-to-center ADDR_CTRL to other DDR3 trace spacing
18
Center-to-center ADDR_CTRL to other ADDR_CTRL trace spacing(10)
19
CK center-to-center spacing(12)
20
CK spacing to other net(10)
21
Rcp(13)
Zo-1
Zo
Zo+1
Ω
22
Rtt(13)(14)
Zo-5
Zo
Zo+5
Ω
4
w
(1) CK represents the clock net class, and ADDR_CTRL represents the address and control signal net class.
(2) The use of vias should be minimized.
(3) Additional bypass capacitors are required when using the VDDS_DDR plane as the reference plane to allow the return current to jump
between the VDDS_DDR plane and the ground plane when the net class switches layers at a via.
(4) Mirrored configuration (one DDR3 device on top of the board and one DDR3 device on the bottom).
(5) Nonmirrored configuration (all DDR3 memories on same side of PCB).
(6) While this length can be increased for convenience, its length should be minimized.
(7) ADDR_CTRL net class only (not CK net class). Minimizing this skew is recommended, but not required.
(8) CK net class only.
(9) CACLM is the longest Manhattan distance of the CK and ADDR_CTRL net classes + 300 mils. For definition, see Section 5.13.8.2.1.6.1
and Figure 5-76.
(10) Center-to-center spacing is allowed to fall to minimum (w) for up to 1250 mils of routed length.
(11) Signals from one DQ net class should be considered other DDR3 traces to another DQ net class.
(12) CK spacing set to ensure proper differential impedance. Differential impedance should be Zo x 2, where Zo is the single-ended
impedance defined in Table 5-53.
(13) Source termination (series resistor at driver) is specifically not allowed.
(14) Termination values should be uniform across the net class.
5.13.8.2.1.6.2 DQS[x] and DQ[x] Routing Specification
Skew within the DQS[x] and DQ[x] net classes directly reduces setup and hold margin and, thus, this skew
must be controlled. The only way to practically match lengths on a PCB is to lengthen the shorter traces
up to the length of the longest net in the net class and its associated clock. DQLMn is defined as DQ
Longest Manhattan distance n, where n is the byte number. For a 16-bit interface, there are two DQLMs,
DQLM0 and DQLM1.
NOTE
It is not required, nor is it recommended, to match the lengths across all bytes. Length
matching is only required within each byte.
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Given the DQS[x] and DQ[x] pin locations on the device and the DDR3 memories, the maximum possible
Manhattan distance can be determined given the placement. Figure 5-77 shows this distance for a twoload case. It is from this distance that the specifications on the lengths of the transmission lines for the
data bus are determined. For DQS[x] and DQ[x] routing, these specifications are contained in Table 5-60.
DQLMX0
DQ[0:7], DM0, DQS0
DQ0
DQ1
DQ[8:15], DM1, DQS1
DQLMX1
DQ[16:23], DM2, DQS2
DQ2
DQLMX2
DQ[24:31], DM3, DQS3
DQ3
DQLMY3 DQLMY2
DQLMY0
DQLMY1
DQLMX3
3
2
1
0
DQ0 - DQ3 represent data bytes 0 - 3.
There are four DQLMs, one for each byte (16-bit interface). Each DQLM is the longest Manhattan distance of the
byte; therefore:
DQLM0 = DQLMX0 + DQLMY0
DQLM1 = DQLMX1 + DQLMY1
DQLM2 = DQLMX2 + DQLMY2
DQLM3 = DQLMX3 + DQLMY3
Figure 5-77. DQLM for Any Number of Allowed DDR3 Devices
Table 5-60. DQS[x] and DQ[x] Routing Specification(1)(2)
NO.
MAX
UNIT
1
(3)(4)
PARAMETER
MIN
TYP
DQ0 nominal length
DQLM0
mils
2
DQ1 nominal length(3)(5)
DQLM1
mils
3
DQ2 nominal length
DQLM2
mils
4
DQ3 nominal length
DQLM3
mils
5
DQ[x] skew(6)
25
mils
6
DQS[x] skew
5
mils
25
mils
(6)(7)
7
DQS[x]-to-DQ[x] skew
8
Center-to-center DQ[x] to other DDR3 trace spacing(8)(9)
4
w
9
Center-to-center DQ[x] to other DQ[x] trace spacing(8)(10)
3
w
10
DQS[x] center-to-center spacing(11)
11
DQS[x] center-to-center spacing to other net(8)
4
w
(1) DQS[x] represents the DQS0 and DQS1 clock net classes, and DQ[x] represents the DQ0 and DQ1 signal net classes.
(2) External termination disallowed. Data termination should use built-in ODT functionality.
(3) DQLMn is the longest Manhattan distance of a byte. For definition, see Section 5.13.8.2.1.6.2 and Figure 5-77.
(4) DQLM0 is the longest Manhattan length for the DQ0 net class.
(5) DQLM1 is the longest Manhattan length for the DQ1 net class.
(6) Length matching is only done within a byte. Length matching across bytes is not required. To maintain tighter delay skew, route the
DQ[x] and DQS[x] signals within a byte to have same number of VIA and layer transitions.
(7) Each DQS clock net class is length matched to its associated DQ signal net class.
(8) Center-to-center spacing is allowed to fall to minimum for up to 1250 mils of routed length.
(9) Other DDR3 trace spacing means signals that are not part of the same DQ[x] signal net class.
(10) This applies to spacing within same DQ[x] signal net class.
(11) DQS[x] pair spacing is set to ensure proper differential impedance. Differential impedance should be Zo × 2, where Zo is the singleended impedance defined in Table 5-53.
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5.13.8.2.2 LPDDR2 Routing Guidelines
This section provides the timing specification for the LPDDR2 interface as a PCB design and
manufacturing specification. The design rules constrain PCB trace length, PCB trace skew, signal
integrity, cross-talk, and signal timing. These rules, when followed, result in a reliable LPDDR2 memory
system without the need for a complex timing closure process. For more information regarding guidelines
for using this LPDDR2 specification, see Understanding TI's PCB Routing Rule-Based DDR Timing
Specification. This application report provides generic guidelines and approach. All the specifications
provided in the data manual take precedence over the generic guidelines and must be adhered to for a
reliable LPDDR2 interface operation.
5.13.8.2.2.1 LPDDR2 Board Designs
TI only supports board designs using LPDDR2 memory that follow the guidelines in this document. The
switching characteristics and timing diagram for the LPDDR2 memory interface are shown in Table 5-61
and Figure 5-78.
Table 5-61. Switching Characteristics for LPDDR2 Memory Interface
NO.
1
PARAMETER
tc(DDR_CK)
Cycle time, DDR_CK and DDR_CKn
MIN
MAX
7.52
3.76(1)
UNIT
ns
(1) The JEDEC JESD209-2F standard defines the maximum clock period of 100 ns for all standard-speed bin LPDDR2 memory. The
device has only been tested per the limits published in this table.
1
DDR_CK
DDR_CKn
Figure 5-78. LPDDR2 Memory Interface Clock Timing
5.13.8.2.2.2 LPDDR2 Device Configurations
There are several possible combinations of device counts and single-side or dual-side mounting. Table 562 lists all the supported configurations.
Table 5-62. Supported LPDDR2 Device Combinations
NUMBER OF LPDDR2
DEVICES
LPDDR2 DEVICE WIDTH (BITS)
MIRRORED?(1)
LPDDR2 EMIF WIDTH (BITS)
1
32
N
32
(2)
32
N
32
1
16
N
16
2(2)
16
N
16
2
(1) Two LPDDR2 devices are mirrored when one device is placed on the top of the board and the second device is placed on the bottom of
the board.
(2) Two devices are supported only with twin-die configuration which embeds two devices in the same package.
Details on treating unused pins are listed in Section 5.13.8.2.2.3.1.
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5.13.8.2.2.3 LPDDR2 Interface
5.13.8.2.2.3.1 LPDDR2 Interface Schematic
The LPDDR2 interface schematic varies, depending upon the width of the LPDDR2 devices used.
Figure 5-79 shows the schematic connections for 16-bit interface using one x16 LPDDR2 device. Two x16
LPDDR2 devices are supported for twin-die configuration which embeds two devices in the same
package.
16-Bit LPDDR2
Interface
16-Bit LPDDR2
Device
DDR_D15
DQ15
8
DDR_D8
DQ8
DDR_DQM1
DDR_DQS1
DDR_DQSn1
DM1
DQS1_t
DQS1_c
DDR_D7
DQ7
8
DDR_D0
DQ0
DDR_DQM1
DDR_DQS1
DDR_DQSn1
DM0
DQS0_t
DQS0_c
DDR_CK
DDR_CKn
CK_t
CK_c
DDR_CKE0
DDR_CKE1
DDR_CSn0
DDR_CSn1
DDR_RASn
DDR_CASn
DDR_WEn
DDR_BA0
DDR_BA1
DDR_BA2
DDR_A1
DDR_A2
DDR_A10
DDR_A13
CKE0
CKE1
CS0_n
CS1_n
CA0
CA1
CA2
CA7
CA8
CA9
CA5
CA6
CA4
CA3
ZQ
DDR_VREF
0.1 µF
ZQ0/1
Vref(CA)
Vref(DQ)
0.1 µF
VDDS_DDR
0.1 µF
1K
DDR_VREF
0.1 µF
1K
DDR_VTP
49.9 Ω
(±1%, 20 mW)
Copyright © 2016, Texas Instruments Incorporated
Figure 5-79. 16-Bit Interface Using One 16-Bit LPDDR2 Device
Figure 5-80 shows the schematic connections for 32-bit interface using one x32 LPDDR2 device.
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32-Bit LPDDR2
Interface
32-Bit LPDDR2
Device
DDR_D31
DQ31
8
DDR_D24
DQ24
DDR_DQM3
DDR_DQS3
DDR_DQSn3
DM31
DQS3_t
DQS3_c
DDR_D23
DQ23
8
DDR_D16
DQ16
DDR_DQM2
DDR_DQS2
DDR_DQSn2
DM2
DQS2_t
DQS2_c
DDR_D15
DQ15
8
DDR_D8
DQ8
DDR_DQM1
DDR_DQS1
DDR_DQSn1
DM1
DQS1_t
DQS1_c
DDR_D7
DQ7
8
DQ0
DDR_D0
DDR_DQM0
DDR_DQS0
DDR_DQSn0
DDR_CK
DDR_CKn
DM0
DQS0_t
DQS0_c
CK_t
CK_c
DDR_CKE0
DDR_CKE1
DDR_CSn0
DDR_CSn1
DDR_RASn
DDR_CASn
DDR_WEn
DDR_BA0
DDR_BA1
DDR_BA2
DDR_A1
DDR_A2
DDR_A10
DDR_A13
CKE0
CKE1
CS0_n
CS1_n
CA0
CA1
CA2
CA7
CA8
CA9
CA5
CA6
CA4
CA3
ZQ
DDR_VREF
0.1 µF
ZQ0/1
Vref(CA)
Vref(DQ)
0.1 µF
VDDS_DDR
0.1 µF
1K
DDR_VREF
0.1 µF
1K
DDR_VTP
49.9 Ω (±1% 20mW)
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Figure 5-80. 32-Bit Interface Using One 32-Bit LPDDR2 Device
When not using a part of LPDDR2 interface (using x16 or not using the LPDDR2 interface):
• Connect the VDDS_DDR supply to 1.8 V
• Connect the DDR_VREF supply to 0.9 V
• Tie off DDR_DQS[x] (x=0,1,2,3) that are unused to VSS via 1 kΩ
• Tie off DDR_DQSn[x] (x=0,1,2,3) that are unused to VDDS_DDR via 1 kΩ
• All other unused pins can be left as NC.
Note: All the unused DDR ADDR_CTRL lines used for DDR3 operation should be left as NC.
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5.13.8.2.2.3.2 Compatible JEDEC LPDDR2 Devices
Table 5-63 shows the supported LPDDR2 device configurations which are compatible with this interface.
Table 5-63. Compatible JEDEC LPDDR2 Devices (Per Interface)
NO.
PARAMETER
1
JEDEC LPDDR2 device speed grade
2
JEDEC LPDDR2 device bit width
3
JEDEC LPDDR2 device count
CONDITION
MIN
tc(DDR_CK) and tc(DDR_CKn)
MAX
UNIT
LPDDR2-533
x16
x32
Bits
1
2(1)
Devices
(1) Two devices are supported only with twin-die configuration which embeds two devices in the same package.
5.13.8.2.2.3.3 LPDDR2 PCB Stackup
Table 5-64 shows the minimum stackup requirements. Additional layers may be added to the PCB
stackup to accommodate other circuitry, enhance signal integrity and electromagnetic interference
performance, or to reduce the size of the PCB footprint.
Table 5-64. Minimum PCB Stackup
LAYER
TYPE
DESCRIPTION
1
Signal
Top signal routing
2
Plane
Ground
3
Plane
Power
4
Signal
Bottom signal routing
PCB stackup specifications for LPDDR2 interface are listed in Table 5-65.
Table 5-65. PCB Stackup Specifications(1)
NO.
PARAMETER
MIN
TYP
MAX
UNIT
1
PCB routing and plane layers
4
2
Signal routing layers
2
3
Full ground reference layers under LPDDR2 routing region(1)
1
4
Full VDDS_DDR power reference layers under the LPDDR2 routing
region(1)
1
5
Number of reference plane cuts allowed within LPDDR2 routing region(2)
0
6
Number of layers between LPDDR2 routing layer and reference plane(3)
0
7
PCB routing feature size
4
8
PCB trace width, w
4
9
PCB BGA escape via pad size(4)
18
10
PCB BGA escape via hole size
10
11
Single-ended impedance, Zo(5)
50
75
Ω
12
Impedance control(6)(7)
Zo
Zo+5
Ω
Zo-5
mils
mils
20
mils
mils
(1) Ground reference layers are preferred over power reference layers. Be sure to include bypass caps to accommodate reference layer
return current as the trace routes switch routing layers.
(2) No traces should cross reference plane cuts within the LPDDR2 routing region. High-speed signal traces crossing reference plane cuts
create large return current paths which can lead to excessive crosstalk and EMI radiation.
(3) Reference planes are to be directly adjacent to the signal plane to minimize the size of the return current loop.
(4) An 18-mil pad assumes Via Channel is the most economical BGA escape. A 20-mil pad may be used if additional layers are available
for power routing. An 18-mil pad is required for minimum layer count escape.
(5) Zo is the nominal singled-ended impedance selected for the PCB.
(6) This parameter specifies the AC characteristic impedance tolerance for each segment of a PCB signal trace relative to the chosen Zo
defined by the single-ended impedance parameter.
(7) Tighter impedance control is required to ensure flight time skew is minimal.
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5.13.8.2.2.3.4 LPDDR2 Placement
Figure 5-81 shows the placement rules for the device as well as the LPDDR2 memory device. Placement
restrictions are provided as a guidance to restrict maximum trace lengths and allow for proper routing
space.
X1
Y
LPDDR2
interface
Figure 5-81. Placement Specifications
Table 5-66. Placement Specifications(1)
NO.
MAX
UNIT
1
X1 Offset(2)(3)
1500
mils
2
Y Offset(2)(3)(4)
1500
mils
3
PARAMETER
MIN
(4)(5)
Clearance from non-LPDDR2 signal to LPDDR2 keepout region
4
w
(1) LPDDR2 keepout region to encompass entire LPDDR2 routing area.
(2) Measurements from center of device to center of LPDDR2 device.
(3) Minimizing X1 and Y improves timing margins.
(4) w is defined as the signal trace width.
(5) Non-LPDDR2 signals allowed within LPDDR2 keepout region provided they are separated from LPDDR2 routing layers by a ground
plane.
5.13.8.2.2.3.5 LPDDR2 Keepout Region
The region of the PCB used for LPDDR2 circuitry must be isolated from other signals. The LPDDR2
keepout region is defined for this purpose and is shown in Figure 5-82. This region should encompass all
LPDDR2 circuitry and the region size varies with component placement and LPDDR2 routing. NonLPDDR2 signals should not be routed on the same signal layer as LPDDR2 signals within the LPDDR2
keepout region. Non-LPDDR2 signals may be routed in the region provided they are routed on layers
separated from LPDDR2 signal layers by a ground layer. No breaks should be allowed in the reference
ground or VDDS_DDR power plane in this region. In addition, the VDDS_DDR power plane should cover
the entire keepout region.
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LPDDR2
interface
LPDDR2 Keepout Region
Encompasses Entire
LPDDR2 Routing Area
Figure 5-82. LPDDR2 Keepout Region
5.13.8.2.2.3.6 LPDDR2 Net Classes
Table 5-67. Clock Net Class Definitions for the LPDDR2
Interface
CLOCK NET CLASS
CK
PIN NAMES
DDR_CK and DDR_CKn
DQS0
DDR_DQS0 and DDR_DQSn0
DQS1
DDR_DQS1 and DDR_DQSn1
DQS2
DDR_DQS2 and DDR_DQSn2
DQS3
DDR_DQS3 and DDR_DQSn3
Table 5-68. Signal Net Class and Associated Clock Net Class for LPDDR2 Interface
SIGNAL NET CLASS
ASSOCIATED CLOCK
NET CLASS
ADDR_CTRL
CK
DQ0
DQS0
DDR_D[7:0], DDR_DQM0
DQ1
DQS1
DDR_D[15:8], DDR_DQM1
DQ2
DQS2
DDR_D[23:16], DDR_DQM2
DQ3
DQS3
DDR_D[31:24], DDR_DQM3
PIN NAMES
DDR_BA[2:0], DDR_CSn0, DDR_CSn1, DDR_CKE0, DDR_CKE1,
DDR_RASn, DDR_CASn, DDR_WEn, DDR_A1, DDR_A2, DDR_A10,
DDR_A13
5.13.8.2.2.3.7 LPDDR2 Signal Termination
On-device termination (ODT) is available for DQ[3:0] signal net classes, but is not specifically required for
normal operation. System designers may evaluate the need for additional series termination if required
based on signal integrity, EMI and overshoot/undershoot reduction.
5.13.8.2.2.3.8 LPDDR2 DDR_VREF Routing
DDR_VREF is the reference voltage for the input buffers on the LPDDR2 memory as well as the device.
DDR_VREF is intended to be half the LPDDR2 power supply voltage and is typically generated with a
voltage divider connected to the VDDS_DDR power supply. It should be routed as a nominal 20-mil wide
trace with 0.1-µF bypass capacitors near each device connection. Narrowing of DDR_VREF is allowed to
accommodate routing congestion.
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5.13.8.2.2.4 Routing Specification
5.13.8.2.2.4.1 DQS[x] and DQ[x] Routing Specification
DQS[x] lines are point-to-point differential and DQ[x] lines are point-to-point single ended. Figure 5-83 and
Figure 5-84 represent the supported topologies. Figure 5-85 and Figure 5-86 show the DQS[x] and DQ[x]
routing. Figure 5-87 shows the DQLM for the LPDDR2 interface.
Device
DQS[x]
IO Buffer
DDR3
DQS[x]
IO Buffer
DQS[x]+
DQS[x]Routed Differentially
x = 0, 1, 2, 3
Figure 5-83. DQS[x] Topology
Device
DQ[x]
IO Buffer
DDR3
DQ[x]
IO Buffer
DQ[x]
x = 0, 1, 2, 3
Figure 5-84. DQ[x] Topology
DQS[x]+
DQS[x]-
DQS[x]
Routed Differentially
x = 0, 1, 2, 3
Figure 5-85. DQS[x] Routing
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DQ[x]
x = 0, 1, 2, 3
Figure 5-86. DQ[x] Routing
DQLMXi
DQi
LPDDR2
interface
i = 0, 1, 2, 3
DQLMYi
DQLM0 = DQLMX0 + DQLMY0
DQLM1 = DQLMX1 + DQLMY1
DQLM2 = DQLMX2 + DQLMY2
DQLM3 = DQLMX3 + DQLMY3
DQ0 - DQ3 represent data bytes 0 - 3.
There are four DQLMs, one for each data byte, in a 32-bit interface and two DQLMs, one for each data byte, in a 16bit interface. Each DQLM is the longest Manhattan distance of the byte.
Figure 5-87. DQLM for LPDDR2 Interface
Trace routing specifications for the DQ[x] and the DQS[x] are specified in Table 5-69.
Table 5-69. DQS[x] and DQ[x] Routing Specification(1)(2)
NO.
MAX
UNIT
1
DQ0 nominal length(3)(4)
PARAMETER
MIN
DQLM0
mils
2
DQ1 nominal length(3)(5)
DQLM1
mils
3
DQ2 nominal length
(3)(6)
DQLM2
mils
4
DQ3 nominal length (3)(7)
DQLM3
mils
5
DQ[x] skew(8)
50
mils
6
DQS[x] skew
10
mils
7
Via count per each trace in DQ[x], DQS[x]
8
Via count difference across a given DQ[x], DQS[x]
9
DQS[x]-to-DQ[x] skew(8)(9)
2
0
50
(10)(11)
10
Center-to-center DQ[x] to other LPDDR2 trace spacing
11
Center-to-center DQ[x] to other DQ[x] trace spacing(10)(12)
12
DQS[x] center-to-center spacing(13)
13
DQS[x] center-to-center spacing to other net(10)
204
Specifications
TYP
mils
4
w
3
w
4
w
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(1) DQS[x] represents the DQS0, DQS1, DQS2, DQS3 clock net classes, and DQ[x] represents the DQ0, DQ1, DQ2, DQ3 signal net
classes.
(2) External termination disallowed. Data termination should use built-in ODT functionality.
(3) DQLMn is the longest Manhattan distance of a byte.
(4) DQLM0 is the longest Manhattan length for the DQ0 net class.
(5) DQLM1 is the longest Manhattan length for the DQ1 net class.
(6) DQLM2 is the longest Manhattan length for the DQ2 net class.
(7) DQLM3 is the longest Manhattan length for the DQ3 net class.
(8) Length matching is only done within a byte. Length matching across bytes is not required.
(9) Each DQS clock net class is length matched to its associated DQ signal net class.
(10) Center-to-center spacing is allowed to fall to minimum for up to 1000 mils of routed length.
(11) Other LPDDR2 trace spacing means signals that are not part of the same DQ[x] signal net class.
(12) This applies to spacing within same DQ[x] signal net class.
(13) DQS[x] pair spacing is set to ensure proper differential impedance. Differential impedance should be Zo x 2, where Zo is the singleended impedance.
5.13.8.2.2.4.2 CK and ADDR_CTRL Routing Specification
CK signals are routed as point-to-point differential, and ADDR_CTRL signals are routed as point-to-point
single ended. The supported topology for CK and ADDR_CTRL are shown in Figure 5-88 through
Figure 5-91. ADDR_CTRL are routed very similar to DQ and CK is routed very similar to DQS.
CK+
Device CK
Output Buffer
LPDDR2
Input Buffer
CKRouted Differentially
Figure 5-88. CK Signals Topology
Device
ADDR_CTRL
Output Buffer
LPDDR2
ADDR_CTRL
Input Buffer
ADDR_CTRL
Figure 5-89. ADDR_CTRL Signals Topology
CK+
CK-
CK-
Routed Differentially
Figure 5-90. CK Signals Routing
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ADDR_CTRL
Figure 5-91. ADDR_CTRL Signals Routing
CACLMX
LPDDR2
interface
CACLM = CACLMX + CACLMY
CACLMY
CACLM is the longest Manhattan distance of the CK/ADDR_CTRL signal class.
Figure 5-92. CACLM for LPDDR2 Interface
Trace routing specifications for the CK and the ADD_CTRL are specified in Table 5-70.
Table 5-70. CK and ADDR_CTRL Routing Specification
NO.
PARAMETER
MIN
TYP
(1)
MAX
UNIT
1
CK and ADDR_CTRL nominal trace length
CACLM
mils
2
ADDR_CTRL skew
50
mils
3
CK skew
10
mils
4
Via count per each trace ADDR_CTRL, CK
5
Via count difference across ADDR_CTRL, CK
6
ADDR_CTRL-to-CK skew
7
Center-to-center ADDR_CTRL to other LPDDR2 trace spacing(2)(3)
2
0
50
8
Center-to-center ADDR_CTRL to other ADDR_CTRL trace spacing
9
CK center-to-center spacing(4)
10
CK center-to-center spacing to other net(2)
(2)
mils
4
w
3
w
4
w
(1) CACLM is the longest Manhattan distance of ADDR_CTRL and CK.
(2) Center-to-center spacing is allowed to fall to minimum for up to 1000 mils of routed length.
(3) Other LPDDR2 trace spacing means signals that are not part of the same CK, ADDR_CTRL signal net class.
(4) CK pair spacing is set to ensure proper differential impedance. Differential impedance should be Zo x 2, where Zo is the single ended
impedance.
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5.13.9 Display Subsystem (DSS)
NOTE
For more information, see the Display Subsystem chapter of the AM437x Sitara Processors
Technical Reference Manual.
The display subsystem (DSS) provides the logic to display the video frame from external (SDRAM) or
internal (SRAM) memory on an LCD panel or a TV set. The display subsystem integrates the following
elements:
• Display controller (DISPC) module
• Remote frame buffer interface (RFBI) module
The DSS can be used in the following configuration: LCD display with parallel interface
5.13.9.1 DSS—Parallel Interface
In parallel interface, the paths of the display subsystem modules are the display controller and the RFBI.
The display controller has two I/O pad modes and could be in the following configuration:
• Bypass mode (RFBI disabled), which implements the MIPI DPI protocol
• RFBI mode (RFBI enabled), which implements MIPI DBI 2.0 type B protocol
5.13.9.1.1 DSS—Parallel Interface—Bypass Mode
Two types of LCD panel are supported:
• Thin film transistor (TFT) or active matrix technology
• Supertwisted nematic (STN) or passive matrix technology
Both configurations are discussed in the following paragraphs.
5.13.9.1.1.1 DSS—Parallel Interface—Bypass Mode—TFT Mode
Table 5-72 assumes testing over the recommended operating conditions and electrical characteristic
conditions below (see Figure 5-93).
Table 5-71. DSS Timing Conditions—TFT Mode
VALUE
TIMING CONDITION PARAMETER
MIN
UNIT
MAX
Output Condition
CLOAD
Output load capacitance
10
pF
Table 5-72. DSS Switching Characteristics—TFT Mode
NO.
PARAMETER
OPP100
OPP50
MIN
MAX
MIN
MAX
UNIT
DL0
td(pclkA-hsync)
Delay time, output pixel clock dss_pclk active edge to
output horizontal synchronization dss_hsync transition
-2.4
2.4
-3.5
2.5
ns
DL1
td(pclkA-vsync)
Delay time, output pixel clock dss_pclk active edge to
output vertical synchronization dss_vsync transition
-2.4
2.4
-3.5
2.5
ns
DL2
td(pclkA-acbiasA)
Delay time, output pixel clock dss_pclk active edge to
output data enable dss_acbias active level
-2.4
2.4
-3.5
2.5
ns
DL3
td(pclkA-dV)
Delay time, output pixel clock dss_pclk active edge to
output data dss_data[23:0] valid
-2.4
2.4
-3.5
2.5
ns
DL4
1 / tc(pclk)
Frequency(1), output pixel clock dss_pclk
75
MHz
100
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Table 5-72. DSS Switching Characteristics—TFT Mode (continued)
NO.
OPP100
PARAMETER
DL5
tw(pclk)
Pulse duration, output pixel clock dss_pclk low or high
tJ(pclk)
Peak-peak jitter, output pixel clock dss_pclk
OPP50
UNIT
MIN
MAX
MIN
MAX
0.45P(2)
0.55P(2)(3)
0.45P(2)
0.55P(2)(3)
ns
200
ps
200
(1) The pixel clock frequency is software programmable via the pixel clock DISPC_DIVISOR register.
(2) P = dss_pclk period in ns
(3) tw(pclk) = 0.66P when DISPC_DIVISOR[7:0] PCD = 3
DL5
DL4
dss_pclk
DL1
dss_vsync
DL0
dss_hsync
DL2
dss_acbias
DL3
dss_data[23:0]
A.
B.
C.
D.
The pixel data bus depends on the use of 8-, 9-, 12-, 16-, 18-, or 24-bit per pixel data output pins.
The pixel clock frequency is programmable.
All timings not illustrated in the waveform are progammable by software, and control signal polarity and driven edge of
dss_pclk too.
For more information, see the DSS chapter in the AM437x Sitara Processors Technical Reference Manual.
Figure 5-93. DSS—TFT Mode
5.13.9.1.1.2 DSS—Parallel Interface—Bypass Mode—STN Mode
Table 5-74 assumes testing over the recommended operating conditions and electrical characteristic
conditions below (see Figure 5-94).
Table 5-73. DSS Timing Conditions—STN Mode
VALUE
TIMING CONDITION PARAMETER
MIN
UNIT
MAX
Output Condition
CLOAD
Output load capacitance
40
pF
Table 5-74. DSS Switching Characteristics—STN Mode (1)
NO.
PARAMETER
DL3
td(pclkA-dV)
Delay time, output pixel clock dss_pclk active edge to
output data dss_data[7:0] valid
DL4
1 / tc(pclk)
Frequency (2), output pixel clock dss_pclk
DL5
tw(pclk)
Pulse duration, output pixel clock dss_pclk low or high
(1)
(2)
(3)
(4)
208
OPP100
OPP50
UNIT
MIN
MAX
MIN
MAX
-6
6
-6
6
ns
45
MHz
0.45P (3)
0.55P (3) (4)
0.45P (3)
0.55P (3) (4)
ns
45
The DSS in STN mode is used with 4 or 8 pins only; unused pixel data bits always remain low.
The pixel clock frequency is software programmable via the pixel clock divider DISPC_DIVISOR register.
P = dss_pclk period in ns
tW(pclk) = 0.66P when DISPC_DIVISOR[7:0] PCD = 3
Specifications
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Table 5-74. DSS Switching Characteristics—STN Mode(1) (continued)
NO.
OPP100
PARAMETER
tJ(pclk)
MIN
Peak-peak jitter, output pixel clock dss_pclk
OPP50
MAX
MIN
200
UNIT
MAX
200
ps
DL5
DL4
dss_pclk
dss_vsync
dss_hsync
dss_acbias
DL3
dss_data[23:0]
A.
B.
C.
D.
E.
The pixel data bus depends on the use of 4-, 8-, 12-, 16-, 18-, or 24-bit per pixel data output pins.
All timings not illustrated in the waveform are progammable by software, and control signal polarity and driven edge of
dss_pclk too.
dss_vsync width must be programmed to be as small as possible.
The pixel clock frequency is programmable.
For more information, see the DSS chapter in the AM437x Sitara Processors Technical Reference Manual.
Figure 5-94. DSS—STN Mode
5.13.9.1.2 DSS—Parallel Interface—RFBI Mode—Applications
5.13.9.1.2.1 DSS—Parallel Interface—RFBI Mode—MIPI DBI 2.0—LCD Panel
The Remote Frame Buffer Interface (RFBI) module provides the necessary control signals and data
(MIPI® DBI 2.0 type B protocol) to interface to the LCD driver of the LCD panel.
Table 5-76 and Table 5-77 assume testing over the recommended operating conditions and electrical
characteristic conditions below (see Figure 5-95, Figure 5-96, and Figure 5-97).
Table 5-75. DSS Timing Conditions—RFBI Mode—MIPI DBI 2.0—LCD Panel (1)
TIMING CONDITION PARAMETER
VALUE
MIN
MAX
UNIT
Input Conditions
tR
Input signal rise time
7
ns
tF
Input signal fall time
7
ns
30
pF
Output Condition
CLOAD
(1)
Output load capacitance
For any information regarding the RFBI registers configuration, see the Display Subsystem / Display Subsystem Environment / LCD
Support / Parallel Interface / Parallel Interface in RFBI Mode (MIPI DBI Protocol) / Transaction Timing Diagrams section of the AM437x
Sitara Processors Technical Reference Manual.
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Table 5-76. DSS Timing Requirements—RFBI Mode—MIPI DBI 2.0—LCD Panel
NO.
PARAMETER
OPP100
MIN
OPP50
MAX
MIN
MAX
UNIT
DR0
tsu(dV-rdH)
Setup time, input data rfbi_da[15:0] valid to output
read enable rfbi_rd high
7
7
ns
DR1
th(rdH-dIV)
Hold time, output read enable rfbi_rd high to input data
rfbi_da[15:0] invalid
5
5
ns
td(Data
Input data rfbi_da[15:0] sampled at the end of the
access time
sampled)
N(1)
N(1)
ns
(1) N = (AccessTime) × (TimeParaGranularity + 1) × L4CLK
Table 5-77. DSS Switching Characteristics—RFBI Mode—MIPI DBI 2.0—LCD Panel
OPP100
PARAMETER
tw(wrH)
MIN
Pulse duration, output write enable rfbi_wr high
OPP50
MAX
MIN
MAX
UNIT
A(1)
A(1)
ns
(2)
(2)
ns
tw(wrL)
Pulse duration, output write enable rfbi_wr low
B
td(a0-wrL)
Delay time, output command/data control rfbi_a0 transition to
output write enable rfbi_wr low
C(3)
C(3)
B
ns
td(wrH-a0)
Delay time, output write enable rfbi_wr high to output
command/data control rfbi_a0 transition
D(4)
D(4)
ns
td(csx-wrL)
Delay time, output chip select rfbi_csx(14) low to output write
enable rfbi_wr low
E(5)
E(5)
ns
td(wrH-csxH)
Delay time, output write enable rfbi_wr high to output chip select
rfbi_csx(14) high
F(6)
F(6)
ns
td(dV)
Output data rfbi_da[15:0] valid
G(7)
G(7)
ns
(8)
(8)
ns
td(a0H-rdL)
Delay time, output command/data control rfbi_a0 high to output
read enable rfbi_rd low
H
H
td(rdlH-a0)
Delay time, output read enable rfbi_rd high to output
command/data control rfbi_a0 transition
I(9)
I(9)
ns
tw(rdH)
Pulse duration, output read enable rfbi_rd high
J(10)
J(10)
ns
(11)
K(11)
ns
tw(rdL)
Pulse duration, output read enable rfbi_rd low
K
td(rdL-csxL)
Delay time, output read enable rfbi_rd low to output chip select
rfbi_csx(14) low
L(12)
L(12)
ns
td(rdH-csxH)
Delay time, output read enable rfbi_rd high to output chip select
rfbi_csx(14) high
M(13)
M(13)
ns
tR(wr)
Rise time, output write enable rfbi_wr
7
7
ns
tF(wr)
Fall time, output write enable rfbi_wr
7
7
ns
tR(a0)
Rise time, output command/data control rfbi_a0
7
7
ns
tF(a0)
Fall time, output command/data control rfbi_a0
7
7
ns
(14)
tR(csx)
Rise time, output chip select rfbi_csx
7
7
ns
tF(csx)
Fall time, output chip select rfbi_csx(14)
7
7
ns
tR(d)
Rise time, output data rfbi_da[15:0]
7
7
ns
tF(d)
Fall time, output data rfbi_da[15:0]
7
7
ns
tR(rd)
Rise time, output read enable rfbi_rd
7
7
ns
tF(rd)
Fall time, output read enable rfbi_rd
7
7
ns
(1) A = (WECycleTime – WEOffTime) × (TimeParaGranularity + 1) × L4CLK
(2) B = (WEOffTime – WEOntime) × (TimeParaGranularity + 1) × L4CLK
(3) C = WEOnTime × (TimeParaGranularity + 1) × L4CLK
(4) D = (WECycleTime + CSPulseWidth – WEOffTime) × (TimeParaGranularity + 1) × L4CLK if mode Write to Read or Read to Write is
enabled
(5) E = (WEOnTime – CSOnTime) × (TimeParaGranularity + 1) × L4CLK
(6) F = (CSOffTime – WEOffTime) × (TimeParaGranularity + 1) × L4CLK
(7) G = WECycleTime × (TimeParaGranularity + 1) × L4CLK
210
Specifications
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(8) H = REOnTime × (TimeParaGranularity + 1) × L4CLK
(9) I = (RECycleTime + CSPulseWidth – REOffTime) × (TimeParaGranularity + 1) × L4CLK if mode Write to Read or Read to Write is
enabled
(10) J = (RECycleTime – REOffTime) × (TimeParaGranularity + 1) × L4CLK
(11) K = (REOffTime – REOntime) × (TimeParaGranularity + 1) × L4CLK
(12) L = (REOnTime – CSOnTime) × (TimeParaGranularity + 1) × L4CLK
(13) M = (CSOffTime – REOffTime) × (TimeParaGranularity + 1) × L4CLK
(14) In rfbi_csx, x is equal to 0 or 1.
CsPulseWidth
WeCycleTime
WeCycleTime
rfbi_a0
CsOffTime
CsOffTime
CsOnTime
rfbi_csx
CsOnTime
(A)
WeOffTime
WeOffTime
WeOnTime
WeOnTime
rfbi_wr
rfbi_da[n:0]
(B)
DATA0
DATA1
rfbi_rd
rfbi_te_vsync[1:0]
rfbi_hsync[1:0]
A.
B.
C.
In rfbi_csx, x is equal to 0 or 1.
rfbi_da[n:0], n up to 15
For more information, see the DSS chapter in the AM437x Sitara Processors Technical Reference Manual.
Figure 5-95. DSS—RFBI Mode—MIPI DBI 2.0—LCD Panel—Command / Data Write
AccessTime
AccessTime
ReCycleTime
ReCycleTime
CsPulseWidth
rfbi_a0
CsOffTime
rfbi_csx
CsOffTime
CsOnTime
CsOnTime
ReOffTime
ReOffTime
(A)
ReOnTime
ReOnTime
rfbi_rd
DR0
rfbi_da[n:0]
(B)
DATA0
DR1
DATA1
rfbi_wr
rfbi_te_vsync[1:0]
rfbi_hsync[1:0]
A.
B.
C.
In rfbi_csx, x is equal to 0 or 1.
rfbi_da[n:0], n up to 15
For more information, see the DSS chapter in the AM437x Sitara Processors Technical Reference Manual.
Figure 5-96. DSS—RFBI Mode—MIPI DBI 2.0—LCD Panel—Command / Data Read
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WECycleTime
ReCycleTime
AccessTime
WECycleTime
rfbi_a0
CsOffTime
CsOffTime
CsOnTime
rfbi_csx
CsOffTime
CsOnTime
CsOnTime
(A)
WEOffTime
WEOffTime
WEOnTime
WEOnTime
rfbi_wr
ReOffTime
ReOnTime
rfbi_rd
CsPulseWidth
rfbi_da[n:0]
(B)
WRITE
CsPulseWidth
WRITE
READ
rfbi_te_vsync[1:0]
rfbi_hsync[1:0]
A.
B.
C.
In rfbi_csx, x is equal to 0 or 1.
rfbi_da[n:0], n up to 15
For more information, see the DSS chapter in the AM437x Sitara Processors Technical Reference Manual.
Figure 5-97. DSS—RFBI Mode—MIPI DBI 2.0—LCD Panel—Command / Data Write to Read and Read to
Write Modes
5.13.9.1.2.2 DSS—Parallel Interface—RFBI Mode—Pico DLP
The Remote Frame Buffer Interface (RFBI) module can provide also the necessary control signals and
data to interface to the Pico DLP driver of the Pico DLP panel. Table 5-78 assumes testing over the
recommended operating conditions and electrical characteristic conditions below (see Figure 5-98).
Table 5-78. DSS Timing Conditions—RFBI Mode—Pico DLP
VALUE
TIMING CONDITION PARAMETER
MIN
MAX
UNIT
Output Condition
CLOAD
Output load capacitance
5
pF
To use Pico DLP application, RFBI register must be configured as shown in Table 5-79:
Table 5-79. DSS Register Configuration—RFBI Mode—Pico DLP
REGISTER AND BIT FIELD(1)
DESCRIPTION
BIT
VALUES
Selection parallel mode
RFBI_CONFIGi and
ParallelMode
[1:0]
Time Granularity (multiplies signal timing
latencies by 2).
RFBI_CONFIGi
andTimeGranularity
[4]
CS signal assertion time from Start Access
Time
RFBI_ONOFF_TIMEi and
CSOnTime
[3:0]
0b0000
CS signal deassertion time from Start Access
Time
RFBI_ONOFF_TIMEi and
CSOffTime
[9:4]
0b000100: 4 cycles
WE signal assertion time from Start Access
Time
RFBI_ONOFF_TIMEi and
WEOnTime
[13:10]
0b0000
WE signal deassertion time from Start Access
Time
RFBI_ONOFF_TIMEi and
WEOffTime
[19:14]
0b000010: 2 cycles
RE signal assertion time from Start Access
Time
RFBI_ONOFF_TIMEi and
REOnTime
[23:20]
0b0000
212
Specifications
0b11: 16-bit parallel output interface
selected
0b0: x2 latency disable
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Table 5-79. DSS Register Configuration—RFBI Mode—Pico DLP (continued)
REGISTER AND BIT FIELD(1)
DESCRIPTION
BIT
VALUES
RE signal deassertion time from Start Access
Time
RFBI_ONOFF_TIMEi and
REOffTime
[29:24]
0b0000
Write cycle time
RFBI_CYCLE_TIMEi and
WECycleTime
[5:0]
0b000100: 4 cycles
Read cycle time
RFBI_CYCLE_TIMEi and
ReCycleTime
[11:6]
0b000000
CS pulse width
RFBI_CYCLE_TIMEi and
CSPulseWidth
[17:12]
0b000000
Read to Write CS pulse width enable
RFBI_CYCLE_TIMEi and
RWEnable
[18]
0b0
Read to Read CS pulse width enable
RFBI_CYCLE_TIMEi and
RREnable
[19]
0b0
Write to Write CS pulse width enable
RFBI_CYCLE_TIMEi and
WWEnable
[20]
0b0
Write to Read CS pulse width enable
RFBI_CYCLE_TIMEi and
WREnable
[21]
0b0
From Start Access Time to CLK rising edge
used for the first data capture
RFBI_CYCLE_TIMEi and
AccessTime
[27:22]
0b000000
(1) i is equal to 0 or 1. For more information, see the DSS chapter in the AM437x Sitara Processors Technical Reference Manual.
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Table 5-80. DSS Switching Characteristics—RFBI Mode—Pico DLP(1)(2)(3)
OPP100
PARAMETER
MIN
OPP50
MAX
MIN
MAX
UNIT
tw(wrH)
Pulse duration, output write enable rfbi_wr high
A(4)
A(4)
ns
tw(wrL)
Pulse duration, output write enable rfbi_wr low
B(5)
B(5)
ns
(6)
(6)
ns
td(a0-wrL)
Delay time, output command/data control rfbi_a0
transition to output write enable rfbi_wr low
C
C
td(wrH-a0)
Delay time, output write enable rfbi_wr high to output
command/data control rfbi_a0 transition
D(7)
D(7)
ns
td(csx-wrL)
Delay time, output chip select rfbi_csx(8) low to output
write enable rfbi_wr low
E(9)
E(9)
ns
td(wrH-csxH)
Delay time, output write enable rfbi_wr high to output
chip select rfbi_csx(8) high
F(10)
F(10)
ns
td(dataV)
Output data rfbi_da[15:0](11) valid
G(12)
G(12)
ns
td(Skew)
Skew between output write enable falling rfbi_wr and
output data rfbi_da[15:0](11) high or low
15.5
15.5
ns
td(a0H-rdL)
Delay time, output command/data control rfbi_a0 high to
output read enable rfbi_rd low
H(13)
H(13)
ns
td(rdlH-a0)
Delay time, output read enable rfbi_rd high to output
command/data control rfbi_a0 transition
I(14)
I(14)
ns
tw(rdH)
Pulse duration, output read enable rfbi_rd high
J(15)
J(15)
ns
(16)
K(16)
ns
tw(rdL)
Pulse duration, output read enable rfbi_rd low
K
td(rdL-csxL)
Delay time, output read enable rfbi_rd low to output chip
select rfbi_csx(8) low
L(17)
L(17)
ns
td(rdL-csxH)
Delay time, output read enable rfbi_rd low to output chip
select rfbi_csx(8) high
M(18)
M(18)
ns
tR(wr)
Rise time, output write enable rfbi_wr
7
7
ns
tF(wr)
Fall time, output write enable rfbi_wr
7
7
ns
tR(a0)
Rise time, output command/data control rfbi_a0
7
7
ns
tF(a0)
Fall time, output command/data control rfbi_a0
7
7
ns
(8)
tR(csx)
Rise time, output chip select rfbi_csx
7
7
ns
tF(csx)
Fall time, output chip select rfbi_csx(8)
7
7
ns
tR(d)
Rise time, output data rfbi_da[15:0](11)
7
7
ns
(11)
tF(d)
Fall time, output data rfbi_da[15:0]
7
7
ns
tR(rd)
Rise time, output read enable rfbi_rd
7
7
ns
tF(rd)
Fall time, output read enable rfbi_rd
7
7
ns
(19)
CsOnTime
CS signal assertion time from Start Access Time –
RFBI_ONOFF_TIMEi Register
0
CsOffTime
CS signal deassertion time from Start Access Time –
RFBI_ONOFF_TIMEi Register
40(19)
ns
WeOnTime
WE signal assertion time from Start Access Time –
RFBI_ONOFF_TIMEi Register
0(19)
ns
WeOffTime
WE signal deassertion time from Start Access Time –
RFBI_ONOFF_TIMEi Register
20(19)
ns
ReOnTime
RE signal assertion time from Start Access Time –
RFBI_ONOFF_TIMEi Register
-
ns
ReOffTime
RE signal deassertion time from Start Access Time –
RFBI_ONOFF_TIMEi Register
-
ns
WeCycleTime
Write cycle time – RFBI_CYCLE_TIMEi Register
40(19)
ns
ReCycleTime
Read cycle time – RFBI_CYCLE_TIMEi Register
-
ns
CsPulseWidth
CS pulse width – RFBI_CYCLE_TIMEi Register
0(19)
ns
214
Specifications
ns
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(1) See DM Operating Condition Addendum for OPP voltages.
(2) At OPP100, L4 clock is 100 MHz and at OPP50, L4 clock is 50 MHz.
(3) rfbi_wr must be at 25 MHz.
(4) A = (WECycleTime – WEOffTime) × (TimeParaGranularity + 1) × L4CLK
(5) B = (WEOffTime – WEOntime) × (TimeParaGranularity + 1) × L4CLK
(6) C = WEOnTime × (TimeParaGranularity + 1) × L4CLK
(7) D = (WECycleTime + CSPulseWidth – WEOffTime) × (TimeParaGranularity + 1) × L4CLK if mode Write to Read or Read to Write is
enabled.
(8) In rfbi_csx, x is equal to 0 or 1.
(9) E = (WEOnTime – CSOnTime) × (TimeParaGranularity + 1) × L4CLK
(10) F = (CSOffTime – WEOffTime) × (TimeParaGranularity + 1) × L4CLK
(11) 16-bit parallel output interface is selected in DSS register.
(12) G = WECycleTime × (TimeParaGranularity + 1) × L4CLK
(13) H = REOnTime × (TimeParaGranularity + 1) × L4CLK
(14) I = (RECycleTime + CSPulseWidth – REOffTime) × (TimeParaGranularity + 1) × L4CLK if mode Write to Read or Read to Write is
enabled.
(15) J = (RECycleTime – REOffTime) × (TimeParaGranularity + 1) × L4CLK
(16) K = (REOffTime – REOntime) × (TimeParaGranularity + 1) × L4CLK
(17) L = (REOnTime – CSOnTime) × (TimeParaGranularity + 1) × L4CLK
(18) M = (CSOffTime – REOffTime) × (TimeParaGranularity + 1) × L4CLK
(19) These values are calculated by the following formula: RFBI Register (Value) × L4 Clock (ns).
CsPulseWidth
WeCycleTime
WeCycleTime
rfbi_a0
CsOffTime
CsOnTime
rfbi_csx
CsOffTime
CsOnTime
(A)
WeOffTime
WeOnTime
WeOffTime
WeOnTime
rfbi_wr
DATA0
(B)
rfbi_da[n:0]
rfbi_rd
DATA1
rfbi_te_vsync[1:0]
rfbi_hsync[1:0]
A.
B.
In rfbi_csx, x is equal to 0 or 1.
rfbi_da[n:0], n up to 15
Figure 5-98. DSS—RFBI Mode—Pico DLP—Command / Data Write
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5.13.10 Camera (VPFE)
The camera (VPFE) controller receives input video/image data from external capture devices and stores it
to external memory which is transferred into the external memory via a built-in DMA engine. An internal
buffer block provides a high bandwidth path between the module and the external memory. The Cortex-A9
will process the image data based on application requirements.
5.13.10.1 Camera (VPFE) Timing
The following tables assume testing over recommended operating conditions.
Table 5-81. VPFE Timing Requirements
1.8 V, 3.3 V
NO.
OPP50
MIN
OPP100
MAX
MIN
UNIT
MAX
VF1
tc(CAMx_CLK)
Cycle time, pixel clock input, CAMx_CLK
20
13.3
ns
VF2
tsu(CAMx_D-
Setup time, CAMx_D to CAMx_CLK rising edge
7.5
3.5
ns
Setup time, CAMx_HD to CAMx_CLK rising edge
7.5
3.5
ns
Setup time, CAMx_VD to CAMx_CLK rising edge
7.5
3.5
ns
Setup time, CAMx_WEN to CAMx_CLK rising edge
7.5
3.5
ns
CAMx_CLK)
VF3
tsu(CAMx_HDCAMx_CLK)
VF4
tsu(CAMx_VDCAMx_CLK)
VF5
tsu(CAMx_WENCAMx_CLK)
VF6
tsu(C_FLD-CAMx_CLK) Setup time, CAMx_FIELD to CAMx_CLK rising edge
7.5
3.5
ns
VF7
th(CAMx_CLK-
Hold time, CAMx_D valid after CAMx_CLK rising edge
6.5
2.5
ns
Hold time, CAMx_HD to CAMx_CLK rising edge
6.5
2.5
ns
Hold time, CAMx_VD to CAMx_CLK rising edge
6.5
2.5
ns
Hold time, CAMx_WEN to CAMx_CLK rising edge
6.5
2.5
ns
Hold time, CAMx_FIELD to CAMx_CLK rising edge
6.5
2.5
ns
CAMx_D)
VF8
th(VDIN-HDCAMx_CLK)
VF9
th(CAMx_VDCAMx_CLK)
VF10
th(CAMx_WENCAMx_CLK)
VF11 th(C_FLD-CAMx_CLK)
Table 5-82. VPFE Output Switching Characteristics
1.8 V, 3.3 V
NO.
PARAMETER
OPP50
MIN
VF12
td(CAMx_HD-
OPP100
MAX
MIN
UNIT
MAX
Output delay time, CAMx_HD to CLK rising edge
9
15
2
9
ns
Output delay time, CAMx_VD to CLK rising edge
9
15
2
9
ns
Output delay time, CAMx_WEN to CLK rising edge
9
15
2
9
ns
CAMx_CLK)
VF13
td(CAMx_VDCAMx_CLK)
VF14
td(CAMx_WENCAMx_CLK)
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VF1
CAMx_CLK
(Falling Edge)
CAMx_CLK
(Rising Edge)
VF7
VF2
VF7
CAMx_D[xx]
CAMx_HD,
CAMx_VD,
CAMx_FIELD
VF8, VF9, VF11
VF3, VF4, VF6
VF10
VF5
CAMx_WEN
Figure 5-99. Camera Input Timings
CAMx_CLK
(Falling Edge)
CAMx_CLK
(Rising Edge)
VF15, VF16,
VF17
VF12,
VF13, VF14
CAMx_HD,
CAMx_VD,
CAMx_FIELD
VF12, VF13, VF14
VF15, VF16,
VF17
Figure 5-100. Camera Output Timings
VF18
CAMx_HD
(Falling Edge)
CAMx_HD
(Rising Edge)
VF20
VF19
CAMx_D[xx]
Figure 5-101. Camera Input Timings With VDIN0_HD as Pixel Clock
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5.13.11 Inter-Integrated Circuit (I2C)
For more information, see the Inter-Integrated Circuit (I2C) section of the AM437x ARM Cortex-A9
Microprocessors (MPUs) Technical Reference Manual.
5.13.11.1 I2C Electrical Data and Timing
Table 5-83. I2C Timing Conditions - Slave Mode
TIMING CONDITION PARAMETER
STANDARD MODE
MIN
MAX
FAST MODE
MIN
MAX
UNIT
Output Condition
Cb
Capacitive load for each bus line
400
400
pF
Table 5-84. Timing Requirements for I2C Input Timings
(see Figure 5-102)
STANDARD MODE
NO.
MIN
MAX
FAST MODE
MIN
MAX
UNIT
1
tc(SCL)
Cycle time, SCL
10
2.5
us
2
tsu(SCLH-SDAL)
Setup Time, SCL high before SDA low (for a repeated
START condition)
4.7
0.6
us
3
th(SDAL-SCLL)
Hold time, SCL low after SDA low (for a START and a
repeated START condition)
4
0.6
us
4
tw(SCLL)
Pulse duration, SCL low
4.7
1.3
us
5
tw(SCLH)
Pulse duration, SCL high
4
0.6
us
6
tsu(SDAV-SCLH)
Setup time, SDA valid before SCL high
250
100(1)
7
(2)
3.45
(3)
0
(2)
ns
(3)
th(SCLL-SDAV)
Hold time, SDA valid after SCL low
0
8
tw(SDAH)
Pulse duration, SDA high between STOP and START
conditions
0.9
4.7
9
tr(SDA)
Rise time, SDA
1000
20 + 0.1Cb(4)
300
ns
10
tr(SCL)
Rise time, SCL
1000
20 + 0.1Cb(4)
300
ns
11
tf(SDA)
Fall time, SDA
300
20 + 0.1Cb(4)
300
ns
12
tf(SCL)
Fall time, SCL
300
20 + 0.1Cb(4)
300
ns
13
tsu(SCLH-SDAH)
Setup time, high before SDA high (for STOP condition)
4
14
tw(SP)
Pulse duration, spike (must be suppressed)
0
1.3
us
0.6
50
0
us
us
50
ns
(1) A fast-mode I2C-bus™ device can be used in a standard-mode I2C-bus system, but the requirement tsu(SDA-SCLH)≥ 250 ns must then be
met. This is automatically the case if the device does not stretch the LOW period of the SCL signal. If such a device stretches the LOW
period of the SCL signal, it must output the next data bit to the SDA line tr max + tsu(SDA-SCLH) = 1000 + 250 = 1250 ns (according to the
standard-mode I2C-Bus Specification) before the SCL line is released.
(2) A device must internally provide a hold time of at least 300 ns for the SDA signal (referred to the VIHmin of the SCL signal) to bridge the
undefined region of the falling edge of SCL.
(3) The maximum th(SDA-SCLL) has only to be met if the device does not stretch the low period [tw(SCLL)] of the SCL signal.
(4) Cb is line load in pF.
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9
11
I2C[x]_SDA
6
8
14
4
13
5
10
I2C[x]_SCL
1
12
3
7
2
3
Stop
Start
Repeated
Start
Stop
Figure 5-102. I2C Receive Timing
Table 5-85. Switching Characteristics for I2C Output Timings
(see Figure 5-120)
NO.
15
STANDARD MODE
PARAMETER
MIN
MAX
FAST MODE
MIN
MAX
UNIT
tc(SCL)
Cycle time, SCL
10
2.5
us
16
tsu(SCLH-SDAL)
Setup Time, SCL high before SDA low (for a repeated
START condition)
4.7
0.6
us
17
th(SDAL-SCLL)
Hold time, SCL low after SDA low (for a START and a
repeated START condition)
4
0.6
us
18
tw(SCLL)
Pulse duration, SCL low
4.7
1.3
us
19
tw(SCLH)
Pulse duration, SCL high
4
0.6
us
20
tsu(SDAV-SCLH)
Setup time, SDA valid before SCL high
21
th(SCLL-SDAV)
Hold time, SDA valid after SCL low
22
tw(SDAH)
Pulse duration, SDA high between STOP and START
conditions
23
tr(SDA)
Rise time, SDA
1000
20 + 0.1Cb(1)
300
ns
24
tr(SCL)
Rise time, SCL
1000
20 + 0.1Cb(1)
300
ns
25
tf(SDA)
Fall time, SDA
300
20 + 0.1Cb(1)
300
ns
300
(1)
300
ns
250
100
0
3.45
4.7
26
tf(SCL)
Fall time, SCL
27
tsu(SCLH-SDAH)
Setup time, high before SDA high (for STOP condition)
ns
0
0.9
1.3
4
20 + 0.1Cb
us
us
0.6
us
(1) Cb is line load in pF.
24
26
I2C[x]_SDA
21
23
19
28
20
25
I2C[x]_SCL
27
16
18
22
17
18
Stop
Start
Repeated
Start
Stop
Figure 5-103. I2C Transmit Timing
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5.13.12 Multichannel Audio Serial Port (McASP)
The multichannel audio serial port (McASP) functions as a general-purpose audio serial port optimized for
the needs of multichannel audio applications. The McASP is useful for time-division multiplexed (TDM)
stream, Inter-Integrated Sound (I2S) protocols, and inter-component digital audio interface transmission
(DIT).
5.13.12.1 McASP Device-Specific Information
The device includes two multichannel audio serial port (McASP) interface peripherals (McASP0 and
McASP1). The McASP module consists of a transmit and receive section. These sections can operate
completely independently with different data formats, separate master clocks, bit clocks, and frame syncs
or, alternatively, the transmit and receive sections may be synchronized. The McASP module also
includes shift registers that may be configured to operate as either transmit data or receive data.
The transmit section of the McASP can transmit data in either a time-division-multiplexed (TDM)
synchronous serial format or in a DIT format where the bit stream is encoded for SPDIF, AES-3, IEC60958, CP-430 transmission. The receive section of the McASP peripheral supports the TDM
synchronous serial format.
The McASP module can support one transmit data format (either a TDM format or DIT format) and one
receive format at a time. All transmit shift registers use the same format and all receive shift registers use
the same format; however, the transmit and receive formats need not be the same. Both the transmit and
receive sections of the McASP also support burst mode, which is useful for nonaudio data (for example,
passing control information between two devices).
The McASP peripheral has additional capability for flexible clock generation and error detection/handling,
as well as error management.
The device McASP0 and McASP1 modules have up to four serial data pins each. The McASP FIFO size
is 256 bytes and two DMA and two interrupt requests are supported. Buffers are used transparently to
better manage DMA, which can be leveraged to manage data flow more efficiently.
For more detailed information on and the functionality of the McASP peripheral, see the Multichannel
Audio Serial Port (McASP) section of the AM437x ARM Cortex-A9 Microprocessors (MPUs) Technical
Reference Manual.
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5.13.12.2 McASP Electrical Data and Timing
Table 5-86. McASP Timing Conditions
TIMING CONDITION PARAMETER
MIN
TYP
MAX
UNIT
Input Conditions
tR
Input signal rise time
tF
Input signal fall time
1(1)
4(1)
ns
(1)
4(1)
ns
15
30
pF
1
Output Condition
CLOAD
Output load capacitance
(1) Except when specified otherwise.
Table 5-87. Timing Requirements for McASP(1)
(see Figure 5-104)
OPP100
NO.
MIN
1
tc(AHCLKRX)
Cycle time, McASP[x]_AHCLKR and
McASP[x]_AHCLKX
2
tw(AHCLKRX)
Pulse duration, McASP[x]_AHCLKR and
McASP[x]_AHCLKX high or low
3
tc(ACLKRX)
Cycle time, McASP[x]_ACLKR and
McASP[x]_ACLKX
4
tw(ACLKRX)
Pulse duration, McASP[x]_ACLKR and
McASP[x]_ACLKX high or low
5
tsu(AFSRXACLKRX)
6
th(ACLKRXAFSRX)
Setup time, McASP[x]_AFSR and
McASP[x]_AFSX input valid before
McASP[x]_ACLKR and
McASP[x]_ACLKX
Hold time, McASP[x]_AFSR and
McASP[x]_AFSX input valid after
McASP[x]_ACLKR and
McASP[x]_ACLKX
7
tsu(AXR-ACLKRX)
th(ACLKRX-AXR)
Hold time, McASP[x]_AXR input
valid after McASP[x]_ACLKR and
McASP[x]_ACLKX
MIN
MAX
UNIT
38.46
ns
0.5P - 2.5(2)
0.5P - 2.5(2)
ns
20
38.46
ns
0.5R - 2.5(3)
0.5R - 2.5(3)
ns
12.3
15.5
ACLKR and
ACLKX ext in
4
6
ACLKR and
ACLKX ext out
4
6
-1
-1
ACLKR and
ACLKX ext in
1.6
2.3
ACLKR and
ACLKX ext out
1.6
2.3
12.3
15.5
ACLKR and
ACLKX ext in
4
6
ACLKR and
ACLKX ext out
4
6
-1
-1
ACLKR and
ACLKX ext in
1.6
2.3
ACLKR and
ACLKX ext out
1.6
2.3
ACLKR and
ACLKX int
ACLKR and
ACLKX int
ACLKR and
ACLKX int
8
MAX
20
ACLKR and
ACLKX int
Setup time, McASP[x]_AXR input
valid before McASP[x]_ACLKR and
McASP[x]_ACLKX
OPP50
ns
ns
ns
ns
(1) ACLKR internal: ACLKRCTL.CLKRM = 1, PDIR.ACLKR = 1
ACLKR external input: ACLKRCTL.CLKRM = 0, PDIR.ACLKR = 0
ACLKR external output: ACLKRCTL.CLKRM = 0, PDIR.ACLKR=1
ACLKX internal: ACLKXCTL.CLKXM = 1, PDIR.ACLKX = 1
ACLKX external input: ACLKXCTL.CLKXM = 0, PDIR.ACLKX = 0
ACLKX external output: ACLKXCTL.CLKXM = 0, PDIR.ACLKX = 1
(2) P = McASP[x]_AHCLKR and McASP[x]_AHCLKX period in nano seconds (ns).
(3) R = McASP[x]_ACLKR and McASP[x]_ACLKX period in ns.
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2
1
2
McASP[x]_ACLKR/X (Falling Edge Polarity)
McASP[x]_AHCLKR/X (Rising Edge Polarity)
4
4
3
McASP[x]_ACLKR/X (CLKRP = CLKXP = 0)
McASP[x]_ACLKR/X (CLKRP = CLKXP = 1)
(A)
(B)
6
5
McASP[x]_AFSR/X (Bit Width, 0 Bit Delay)
McASP[x]_AFSR/X (Bit Width, 1 Bit Delay)
McASP[x]_AFSR/X (Bit Width, 2 Bit Delay)
McASP[x]_AFSR/X (Slot Width, 0 Bit Delay)
McASP[x]_AFSR/X (Slot Width, 1 Bit Delay)
McASP[x]_AFSR/X (Slot Width, 2 Bit Delay)
8
7
McASP[x]_AXR[x] (Data In/Receive)
A.
B.
For CLKRP = CLKXP =
receiver is configured for
For CLKRP = CLKXP =
receiver is configured for
A0 A1
A30 A31 B0 B1
B30 B31 C0 C1 C2 C3
0, the McASP transmitter is configured for rising edge (to shift data out) and the McASP
falling edge (to shift data in).
1, the McASP transmitter is configured for falling edge (to shift data out) and the McASP
rising edge (to shift data in).
C31
Figure 5-104. McASP Input Timing
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Table 5-88. Switching Characteristics for McASP(1)
(see Figure 5-105)
OPP100
NO.
MIN
9
tc(AHCLKRX)
Cycle time, McASP[x]_AHCLKR and
McASP[x]_AHCLKX
10
tw(AHCLKRX)
Pulse duration, McASP[x]_AHCLKR and
McASP[x]_AHCLKX high or low
11
tc(ACLKRX)
Cycle time, McASP[x]_ACLKR and
McASP[x]_ACLKX
12
tw(ACLKRX)
Pulse duration, McASP[x]_ACLKR and
McASP[x]_ACLKX high or low
Delay time, McASP[x]_ACLKR and
McASP[x]_ACLKX transmit edge to
McASP[x]_AFSR and
McASP[x]_AFSX output valid
13
14
td(ACLKRX-AFSRX)
td(ACLKX-AXR)
Delay time, McASP[x]_ACLKR and
McASP[x]_ACLKX transmit edge to
McASP[x]_AFSR and
McASP[x]_AFSX output valid with
Pad Loopback
Delay time, McASP[x]_ACLKX
transmit edge to McASP[x]_AXR
output valid
Delay time, McASP[x]_ACLKX
transmit edge to McASP[x]_AXR
output valid with Pad Loopback
Disable time, McASP[x]_ACLKX
transmit edge to McASP[x]_AXR
output high impedance
15
tdis(ACLKX-AXR)
Disable time, McASP[x]_ACLKX
transmit edge to McASP[x]_AXR
output high impedance with Pad
Loopback
OPP50
MAX
MIN
MAX
UNIT
20(2)
38.46
ns
0.5P - 2.5(3)
0.5P - 2.5(3)
ns
20
38.46
ns
0.5P - 2.5(3)
0.5P - 2.5(3)
ns
ACLKR and
ACLKX int
0
7.25
0
8.5
ACLKR and
ACLKX ext in
2
14
2.7
18
ns
ACLKR and
ACLKX ext
out
2
14
2.7
18
ACLKX int
0
7.25
0
8.5
ACLKX ext in
2
14
2.7
18
ns
ACLKX ext
out
2
14
2.7
18
ACLKX int
0
7.25
0
8.5
ACLKX ext in
2
14
2.7
18
ns
ACLKX ext
out
2
14
2.7
18
(1) ACLKR internal: ACLKRCTL.CLKRM = 1, PDIR.ACLKR = 1
ACLKR external input: ACLKRCTL.CLKRM = 0, PDIR.ACLKR = 0
ACLKR external output: ACLKRCTL.CLKRM = 0, PDIR.ACLKR = 1
ACLKX internal: ACLKXCTL.CLKXM = 1, PDIR.ACLKX = 1
ACLKX external input: ACLKXCTL.CLKXM = 0, PDIR.ACLKX = 0
ACLKX external output: ACLKXCTL.CLKXM = 0, PDIR.ACLKX = 1
(2) 50 MHz
(3) P = AHCLKR and AHCLKX period.
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10
10
9
McASP[x]_ACLKR/X (Falling Edge Polarity)
McASP[x]_AHCLKR/X (Rising Edge Polarity)
12
11
McASP[x]_ACLKR/X (CLKRP = CLKXP = 1)
McASP[x]_ACLKR/X (CLKRP = CLKXP = 0)
12
(A)
(B)
13
13
13
13
McASP[x]_AFSR/X (Bit Width, 0 Bit Delay)
McASP[x]_AFSR/X (Bit Width, 1 Bit Delay)
McASP[x]_AFSR/X (Bit Width, 2 Bit Delay)
McASP[x]_AFSR/X (Slot Width, 0 Bit Delay)
13
13
13
McASP[x]_AFSR/X (Slot Width, 1 Bit Delay)
McASP[x]_AFSR/X (Slot Width, 2 Bit Delay)
McASP[x]_AXR[x] (Data Out/Transmit)
14
15
A0
A.
B.
For CLKRP = CLKXP =
receiver is configured for
For CLKRP = CLKXP =
receiver is configured for
A1
A30 A31 B0
B1
B30 B31 C0
C1 C2 C3
C31
1, the McASP transmitter is configured for falling edge (to shift data out) and the McASP
rising edge (to shift data in).
0, the McASP transmitter is configured for rising edge (to shift data out) and the McASP
falling edge (to shift data in).
Figure 5-105. McASP Output Timing
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5.13.13 Multichannel Serial Port Interface (McSPI)
For more information, see the Multichannel Serial Port Interface (McSPI) section of the AM437x ARM
Cortex-A9 Microprocessors (MPUs) Technical Reference Manual.
5.13.13.1 McSPI Electrical Data and Timing
The following timings are applicable to the different configurations of McSPI in master or slave mode for
any McSPI and any channel (n).
5.13.13.1.1 McSPI—Slave Mode
Table 5-89. McSPI Timing Conditions—Slave Mode
TIMING CONDITION PARAMETER
MIN
MAX
UNIT
Input Conditions
tr
Input signal rise time
5
ns
tf
Input signal fall time
5
ns
20
pF
Output Condition
Cload
Output load capacitance
Table 5-90. Timing Requirements for McSPI Input Timings—Slave Mode
(see Figure 5-106)
OPP100
NO.
MIN
1
tc(SPICLK)
Cycle time, SPI_CLK
2
tw(SPICLKL)
Typical Pulse duration, SPI_CLK low
3
OPP50
MIN
0.45P(1)
0.45P(1)
0.45P(1)
0.45P(1)
ns
(1)
(1)
(1)
(1)
ns
62.5
0.45P
MAX
UNIT
MAX
83.2
0.45P
0.45P
ns
tw(SPICLKH)
Typical Pulse duration, SPI_CLK high
4
tsu(SIMO-SPICLK)
Setup time, SPI_D[x] (SIMO) valid before SPI_CLK
active edge(2)(3)
0.45P
12
13
ns
5
th(SPICLK-SIMO)
Hold time, SPI_D[x] (SIMO) valid after SPI_CLK
active edge(2)(3)
12
13
ns
8
tsu(CS-SPICLK)
Setup time, SPI_CS valid before SPI_CLK first
edge(2)
12
13
ns
9
th(SPICLK-CS)
Hold time, SPI_CS valid after SPI_CLK last edge(2)
12
13
ns
(1) P = SPI_CLK period.
(2) This timing applies to all configurations regardless of MCSPIX_CLK polarity and which clock edges are used to drive output data and
capture input data.
(3) Pins SPIx_D0 and SPIx_D1 can function as SIMO or SOMI.
Table 5-91. Switching Characteristics for McSPI Output Timings—Slave Mode
(see Figure 5-107)
NO.
PARAMETER
OPP100
MIN
OPP50
UNIT
MAX
MIN
MAX
0
19
ns
29
ns
6
td(SPICLK-SOMI)
Delay time, SPI_CLK active edge to
SPI_D[x] (SOMI) transition(1)(2)
17
7
td(CS-SOMI)
Delay time, SPI_CS active edge to SPI_D[x]
(SOMI) transition(2)
26
(1) This timing applies to all configurations regardless of MCSPIX_CLK polarity and which clock edges are used to drive output data and
capture input data.
(2) Pins SPIx_D0 and SPIx_D1 can function as SIMO or SOMI.
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PHA=0
EPOL=1
SPI_CS[x] (In)
1
3
8
SPI_SCLK (In)
2
9
POL=0
1
3
2
POL=1
SPI_SCLK (In)
4
4
5
SPI_D[x] (SIMO, In)
5
Bit n-1
Bit n-3
Bit n-2
Bit 0
Bit n-4
PHA=1
EPOL=1
SPI_CS[x] (In)
1
3
8
SPI_SCLK (In)
9
2
POL=0
1
2
3
POL=1
SPI_SCLK (In)
4
5
SPI_D[x] (SIMO, In)
Bit n-1
4
5
Bit n-2
Bit n-3
Bit 1
Bit 0
Figure 5-106. SPI Slave Mode Receive Timing
226
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PHA=0
EPOL=1
SPI_CS[x] (In)
1
3
8
SPI_SCLK (In)
2
9
POL=0
1
3
2
POL=1
SPI_SCLK (In)
SPI_D[x] (SOMI, Out)
6
7
6
Bit n-1
Bit n-2
Bit n-3
Bit 0
Bit n-4
PHA=1
EPOL=1
SPI_CS[x] (In)
1
3
8
SPI_SCLK (In)
9
2
POL=0
1
2
3
POL=1
SPI_SCLK (In)
6
SPI_D[x] (SOMI, Out)
Bit n-1
6
6
Bit n-2
Bit n-3
6
Bit 1
Bit 0
Figure 5-107. SPI Slave Mode Transmit Timing
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5.13.13.1.2 McSPI—Master Mode
Table 5-92. McSPI Timing Conditions—Master Mode
LOW LOAD
TIMING CONDITION PARAMETER
MIN
HIGH LOAD
MAX
MIN
UNIT
MAX
Input Conditions
tr
Input signal rise time
4
8
ns
tf
Input signal fall time
4
8
ns
5
25
pF
Output Condition
Cload
Output load capacitance
Table 5-93. Timing Requirements for McSPI Input Timings—Master Mode
(see Figure 5-108)
OPP100
NO.
LOW LOAD
MIN
OPP50
HIGH LOAD
MAX
MIN
LOW LOAD
MAX
MIN
MAX
HIGH LOAD
MIN
UNIT
MAX
4
tsu(SOMI-SPICLK)(1)
Setup time, SPI_D[x]
(SOMI) valid before
SPI_CLK active edge(2)
3
4.5
4.5
4.5
ns
5
th(SPICLK-SOMI)(1)
Hold time, SPI_D[x]
(SOMI) valid after
SPI_CLK active edge(2)
6
6
6
6
ns
(1) This timing applies to all configurations regardless of MCSPIX_CLK polarity and which clock edges are used to capture input data.
(2) Pins SPIx_D0 and SPIx_D1 can function as SIMO or SOMI.
Table 5-94. Switching Characteristics for McSPI Output Timings—Master Mode
(see Figure 5-109)
OPP100
NO.
PARAMETER
LOW LOAD
MIN
1
2
3
6
8
9
MAX
MAX
Cycle time, SPI_CLK
tw(SPICLKL)
Typical Pulse duration,
SPI_CLK low
0.45P
tw(SPICLKH)
Typical Pulse duration,
SPI_CLK high
0.45P(1)
tr(SPICLK)
Rising time, SPI_CLK
3.5
3.5
tf(SPICLK)
Falling time, SPI_CLK
3.5
3.5
td(SPICLK-
20.8
MIN
LOW LOAD
tc(SPICLK)
SIMO)
7
OPP50
HIGH LOAD
Delay time, SPI_CLK active
edge to SPI_D[x] (SIMO)
transition(2)
td(CS-SIMO)
Delay time, SPI_CS active
edge to SPI_D[x] (SIMO)
transition(2)
td(CS-SPICLK)
Delay time, SPI_CS
active to SPI_CLK
first edge
td(SPICLK-CS)
Delay time,
SPI_CLK last edge
to SPI_CS inactive
(1)
41.6
0.45P
(1)
0.45P(1)
-1
4.5
0.45P
(1)
0.45P(1)
-1
4.5
MIN
HIGH LOAD
MAX
41.6
0.55P
(1)
0.55P(1)
0.45P
(1)
0.45P(1)
6.5
0
6.5
MIN
UNIT
MAX
41.6
ns
0.45P(1)
ns
3.5
3.82
ns
3.5
3.44
ns
6.5
ns
6.5
ns
0.45P(1)
6.5
0.45P
(1)
ns
(1)
0.45P
(1)
0.45P(1)
0
6.5
0.45P
Mode 1
and 3(3)
A - 4.2(4)
A - 4.2(4)
A - 5.2(4)
A - 5.2(4)
ns
Mode 0
and 2(3)
B - 4.2(5)
B - 4.2(5)
B - 5.2(5)
B - 5.2(5)
ns
Mode 1
and 3(3)
B - 4.2(5)
B - 4.2(5)
B - 5.2(5)
B - 5.2(5)
ns
Mode 0
and 2(3)
A - 4.2(4)
A - 4.2(4)
A - 5.2(4)
A - 5.2(4)
ns
(1) P = SPI_CLK period.
(2) Pins SPIx_D0 and SPIx_D1 can function as SIMO or SOMI.
(3) The polarity of SPIx_CLK and the active edge (rising or falling) on which mcspix_simo is driven and mcspix_somi is latched is all
software configurable:
– SPIx_CLK(1) phase programmable with the bit PHA of MCSPI_CH(i)CONF register: PHA = 1 (Modes 1 and 3).
– SPIx_CLK(1) phase programmable with the bit PHA of MCSPI_CH(i)CONF register: PHA = 0 (Modes 0 and 2).
228
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(4) Case P = 20.8 ns, A = (TCS+1)*TSPICLKREF (TCS is a bit field of MCSPI_CH(i)CONF register).
Case P > 20.8 ns, A = (TCS+0.5)*Fratio*TSPICLKREF (TCS is a bit field of MCSPI_CH(i)CONF register).
Note: P = SPI_CLK clock period.
(5) B = (TCS+0.5)*TSPICLKREF*Fratio (TCS is a bit field of MCSPI_CH(i)CONF register, Fratio: Even≥2).
PHA=0
EPOL=1
SPI_CS[x] (Out)
1
3
8
SPI_SCLK (Out)
9
2
POL=0
1
2
3
POL=1
SPI_SCLK (Out)
4
4
5
SPI_D[x] (SOMI, In)
5
Bit n-1
Bit n-3
Bit n-2
Bit 0
Bit n-4
PHA=1
EPOL=1
SPI_CS[x] (Out)
1
3
8
SPI_SCLK (Out)
9
2
POL=0
1
2
3
POL=1
SPI_SCLK (Out)
4
5
SPI_D[x] (SOMI, In)
Bit n-1
4
5
Bit n-2
Bit n-3
Bit 1
Bit 0
Figure 5-108. SPI Master Mode Receive Timing
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PHA=0
EPOL=1
SPI_CS[x] (Out)
1
3
8
SPI_SCLK (Out)
9
2
POL=0
1
2
3
POL=1
SPI_SCLK (Out)
6
7
SPI_D[x] (SIMO, Out)
Bit n-1
6
Bit n-3
Bit n-2
Bit 0
Bit n-4
PHA=1
EPOL=1
SPI_CS[x] (Out)
1
3
8
SPI_SCLK (Out)
9
2
POL=0
1
2
3
POL=1
SPI_SCLK (Out)
6
SPI_D[x] (SIMO, Out)
Bit n-1
6
Bit n-2
6
Bit n-3
6
Bit 1
Bit 0
Figure 5-109. SPI Master Mode Transmit Timing
230
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5.13.14 Quad Serial Port Interface (QSPI)
The Quad SPI (QSPI) module allows single, dual or quad read access to external SPI devices. This
module provides a memory mapped register interface, which provides a direct interface to access data
from external SPI devices and to simplify software requirements. It functions as a master only. There is
one QSPI module in the device and it is primary intended for fast booting from quad-SPI flash
memories.
General SPI features:
• Programmable clock divider
• Six pin interface (QSPI_CLK, QSPI_D0, QSPI_D1,QSPI_D2,QSPI_D3, QSPI_CS0)
• One external chip select signal
• Support for 3-, 4- or 6-pin SPI interface
• Programmable CS0 to DATA_OUT delay from 0 to 3 QSPI_CLKs
• Only supports SPI MODE 3
NOTE
For more information, see the Quad Serial Port Interface section of the AM437x ARM
Cortex-A9 Microprocessors (MPUs) Technical Reference Manual.
Table 5-95 displays the switching characteristics for the Quad SPI module.
Table 5-95. QSPI Switching Characteristics
(see Figure 5-110 and Figure 5-111)
NO.
MIN
OPP50
MAX
MIN
(1)
UNIT
ns
tc(QSPI_CLK)
Cycle time, QSPI_CLK
20.8
2
tw(QSPI_CLKL)
Pulse duration, QSPI_CLK low
9.77 (1)
9.77 (1)
ns
3
tw(QSPI_CLKH)
Pulse duration, QSPI_CLK high
9.77 (1)
9.77 (1)
ns
4
td(CS-QSPI_CLK) Delay time, QSPI_CSn active edge to
QSPI_CLK transition
M*P+5 (2) (3)
M*P+5 (2) (3)
ns
5
td(QSPI_CLK-
M*P+5 (2) (3)
M*P+5 (2) (3)
ns
Delay time, QSPI_CLK transition to
QSPI_CSn inactive edge
6
td(QSPI_CLK-D1) Delay time, QSPI_CLK active edge to
QSPI_D[0] transition
7
tsu(D-QSPI_CLK) Setup time, QSPI_D[3:0] valid before active
QSPI_CLK edge
8
th(QSPI_CLK-D)
20.8
MAX
(1)
1
QSPI_CSn)
(1)
(2)
(3)
OPP100
PARAMETER
0
Hold time, QSPI_D[3:0] valid after active
QSPI_CLK edge
5.5
0
5.5
ns
8.5
8.5
ns
0
0
ns
Maximum supported frequency is 48 MHz.
P = QSPI_CLK period.
M = Programmable via Data Delay Zero (DD0) register.
QSPI_CSn
5
1
4
3
2
QSPI_CLK
6
6
min
QSPI_D[3:0]
Command
n-1
7
max
Command
n-2
8
Read Data
1
7
8
Read Data
0
Figure 5-110. QSPI Read Active High Polarity
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QSPI_CS
5
1
4
3
2
QSPI_CLK
6
QSPI_D[0]
min
6
Command
n-1
max
6
Command
n-2
min
6
max
Write Data
1
Write Data
0
QSPI_D[3:1]
Figure 5-111. QSPI Write Active High Polarity
232
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5.13.15 HDQ/1-Wire Interface (HDQ/1-Wire)
NOTE
For more information, see HDQ/1-Wire Interface chapter of the AM437x ARM Cortex-A9
Microprocessors (MPUs) Technical Reference Manual.
The module is intended to work with both HDQ and 1-Wire protocols. The protocols use one wire to
communicate between the master and the slave. The protocols employ an asynchronous return to one
mechanism where, after any command, the line is pulled high.
5.13.15.1 HDQ Protocol
Table 5-96 and Table 5-97 assume testing over the recommended operating conditions (see Figure 5-112,
Figure 5-113, Figure 5-114, and Figure 5-115).
Table 5-96. HDQ Timing Requirements
PARAMETER
MIN
MAX
UNIT
μs
tCYCD
Bit window
190
tHW1
Reads 1
32
66
μs
tHW0
Reads 0
70
145
μs
tRSPS
Command to host respond time(1)
190
320
μs
MAX
UNIT
(1) Defined by software
Table 5-97. HDQ Switching Characteristics
PARAMETER
DESCRIPTION
MIN
tB
Break timing
190
tBR
Break recovery
40
tCYCH
Bit window
190
tDW1
Sends 1 (write)
tDW0
Sends 0 (write)
μs
μs
250
μs
0.5
50
μs
86
145
μs
tB
tBR
HDQ
Figure 5-112. HDQ Break (Reset) Timing
tCYCH
tHW0
tHW1
HDQ
Figure 5-113. HDQ Read Bit Timing (Data)
tCYCD
tDW0
tDW1
HDQ
Figure 5-114. HDQ Write Bit Timing (Command/Address or Data)
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Command_byte_written
Data_byte_received
0_(LSB)
Break
tRSPS
1
7_(MSB)
6
1
0_(LSB)
6
HDQ
Figure 5-115. HDQ Communication Timing
5.13.15.2 1-Wire Protocol
Table 5-98 and Table 5-99 assume testing over the recommended operating conditions (see Figure 5-116,
Figure 5-117, and Figure 5-118).
Table 5-98. HDQ/1-Wire Timing Requirements—1-Wire Mode
PARAMETER
MIN
MAX
UNIT
tPDH
Presence pulse delay high
15
60
μs
tPDL
Presence pulse delay low
60
240
μs
tRDV + tREL
Read bit-zero time
60
μs
Table 5-99. HDQ/1-Wire Switching Characteristics—1-Wire Mode
PARAMETER
MIN
MAX
UNIT
tRSTL
Reset time low
DESCRIPTION
480
960
μs
tRSTH
Reset time high
480
tSLOT
Bit cycle time
60
120
μs
tLOW1
Write bit-one time
1
15
μs
tLOW0
Write bit-zero time
60
120
μs
tREC
Recovery time
1
tLOWR
Read bit strobe time
1
μs
μs
15
μs
tRSTH
1-WIRE
tRTSL
tPDH
tPDL
Figure 5-116. 1-Wire Break (Reset) Timing
tSLOT_and_tREC
tRDV_and_tREL
1-WIRE
tLOWR
Figure 5-117. 1-Wire Read Bit Timing (Data)
tSLOT_and_tREC
tLOW0
1-WIRE
tLOW1
Figure 5-118. 1-Wire Write Bit Timing (Command/Address or Data)
234
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5.13.16 Programmable Real-Time Unit Subsystem and Industrial Communication
Subsystem (PRU-ICSS)
For more information, see the Programmable Real-Time Unit Subsystem and Industrial Communication
Subsystem Interface (PRU-ICSS) section of the AM437x Sitara Processors Technical Reference Manual.
5.13.16.1 Programmable Real-Time Unit (PRU-ICSS PRU)
Table 5-100. PRU-ICSS PRU Timing Conditions
TIMING CONDITION PARAMETER
MIN
MAX
UNIT
3
30
pF
MAX
UNIT
Output Condition
Cload
Capacitive load for each bus line
5.13.16.1.1 PRU-ICSS PRU Direct Input/Output Mode Electrical Data and Timing
Table 5-101. PRU-ICSS PRU Timing Requirements - Direct Input Mode
(see Figure 5-119)
NO.
1
2
3
(1)
(2)
MIN
2*P (1)
tw(GPI)
Pulse width, GPI
tr(GPI)
Rise time, GPI
1.00
3.00
ns
tf(GPI)
Fall time, GPI
1.00
3.00
tsk(GPI)
Internal skew between GPI[n:0] signals (2)
ns
5.00
ns
MAX
UNIT
P = L3_CLK (PRU-ICSS ocp clock) period.
n = 16, 11 for PRU-ICSS1 and 19 for PRU-ICSS0
1
2
GPI[m:0]
3
Figure 5-119. PRU-ICSS PRU Direct Input Timing
Table 5-102. PRU-ICSS PRU Switching Requirements - Direct Output Mode
(see Figure 5-120)
NO.
1
2
3
(1)
(2)
MIN
2*P (1)
tw(GPO)
Pulse width, GPO
tr(GPO)
Rise time, GPO
1.00
3.00
ns
tf(GPO)
Fall time, GPO
1.00
3.00
tsk(GPO)
Internal skew between GPO[n:0] signals (2)
5.00
ns
ns
P = L3_CLK (PRU-ICSS ocp clock) period.
n = 11 for PRU-ICSS1 and 19 for PRU-ICSS0
1
2
GPO[n:0]
3
Figure 5-120. PRU-ICSS PRU Direct Output Timing
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5.13.16.1.2 PRU-ICSS PRU Parallel Capture Mode Electrical Data and Timing
Table 5-103. PRU-ICSS PRU Timing Requirements - Parallel Capture Mode
(see Figure 5-121 and Figure 5-122)
NO.
MIN
MAX
UNIT
1
tc(CLOCKIN)
Cycle time, CLOCKIN
20.00
ns
2
tw(CLOCKIN_L)
Pulse duration, CLOCKIN low
10.00
ns
3
tw(CLOCKIN_H)
Pulse duration, CLOCKIN high
10.00
ns
4
tr(CLOCKIN)
Rising time, CLOCKIN
1.00
3.00
ns
5
tf(CLOCKIN)
Falling time, CLOCKIN
1.00
3.00
ns
6
tsu(DATAIN-CLOCKIN)
Setup time, DATAIN valid before CLOCKIN
4.00
ns
7
th(CLOCKIN-DATAIN)
Hold time, DATAIN valid after CLOCKIN
0
ns
tr(DATAIN)
Rising time, DATAIN
1.00
3.00
tf(DATAIN)
Falling time, DATAIN
1.00
3.00
8
ns
1
3
5
4
2
CLOCKIN
DATAIN
7
6
8
Figure 5-121. PRU-ICSS PRU Parallel Capture Timing - Rising Edge Mode
1
3
4
5
2
CLOCKIN
DATAIN
7
6
8
Figure 5-122. PRU-ICSS PRU Parallel Capture Timing - Falling Edge Mode
5.13.16.1.3
PRU-ICSS PRU Shift Mode Electrical Data and Timing
Table 5-104. PRU-ICSS PRU Timing Requirements - Shift In Mode
(see Figure 5-123)
NO.
MIN
MAX
tc(DATAIN)
Cycle time, DATAIN
2
tw(DATAIN)
Pulse width, DATAIN
0.45*P (1)
0.55*P (1)
ns
3
tr(DATAIN)
Rising time, DATAIN
1.00
3.00
ns
4
tf(DATAIN)
Falling time, DATAIN
1.00
3.00
ns
(1)
236
10.00
UNIT
1
ns
P = L3_CLK (PRU-ICSS ocp clock) period.
Specifications
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1
2
4
3
DATAIN
Figure 5-123. PRU-ICSS PRU Shift In Timing
Table 5-105. PRU-ICSS PRU Switching Requirements - Shift Out Mode
(see Figure 5-124)
NO.
MIN
MAX
UNIT
1
tc(CLOCKOUT)
Cycle time, CLOCKOUT
2
tw(CLOCKOUT)
Pulse width, CLOCKOUT
0.45*P (1)
10.00
0.55*P (1)
ns
ns
3
tr(CLOCKOUT)
Rising time, CLOCKOUT
1.00
3.00
ns
4
tf(CLOCKOUT)
Falling time, CLOCKOUT
5
td(CLOCKOUT-
Delay time, CLOCKOUT to DATAOUT Valid
1.00
3.00
ns
-1.50
3.00
ns
DATAOUT)
6
(1)
tr(DATAOUT)
Rising time, DATAOUT
1.00
3.00
tf(DATAOUT)
Falling time, DATAOUT
1.00
3.00
ns
P = L3_CLK (PRU-ICSS ocp clock) period.
1
2
4
3
CLOCKOUT
DATAOUT
5
6
Figure 5-124. PRU-ICSS PRU Shift Out Timing
5.13.16.1.4 PRU-ICSS Sigma Delta Electrical Data and Timing
Table 5-106. PRU-ICSS Timing Requirements - Sigma Delta Mode
(see Figure 5-125 and Figure 5-126)
NO.
MIN
MAX
UNIT
1
tw(SDx_CLK)
Pulse width, SDx_CLK
20.00
2
tr(SDx_CLK)
Rising time, SDx_CLK
1.00
3.00
ns
3
tf(SDx_CLK)
Falling time, SDx_CLK
1.00
3.00
ns
4
tsu(SDx_D-SDx_CLK)
Setup time, SDx_D valid before SDx_CLK active edge
10.00
ns
5
th(SDx_CLK-SDx_D)
Hold time, SDx_D valid before SDx_CLK active edge
5.00
ns
tr(SDx_D)
Rising time, SDx_D
1.00
3.00
tf(SDx_D)
Falling time, SDx_D
1.00
3.00
6
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ns
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1
2
3
SDx_CLK
SDx_D
4
5
6
Figure 5-125. PRU-ICSS Sigma Delta Timing - SD_CLK Rising Active Edge
1
3
2
SDx_CLK
SDx_D
4
5
6
Figure 5-126. PRU-ICSS Sigma Delta Timing - SD_CLK Falling Active Edge
5.13.16.1.5
PRU-ICSS ENDAT Electrical Data and Timing
Table 5-107. PRU-ICSS Timing Requirements - ENDAT Mode
(see Figure 5-127)
NO.
MIN
MAX
UNIT
1
tw(ENDATx_IN)
Pulse width, ENDATx_IN
40.00
ns
2
tr(ENDATx_IN)
Rising time, ENDATx_IN
1.00
10.00
ns
3
tf(ENDATx_IN)
Falling time, ENDATx_IN
1.00
10.00
ns
MAX
UNIT
Table 5-108. PRU-ICSS Switching Requirements - ENDAT Mode
(see Figure 5-127)
NO.
MIN
4
tw(ENDATx_CLK)
Pulse width, ENDATx_CLK
20.00
5
tr(ENDATx_CLK)
Rising time, ENDATx_CLK
1.00
3.00
ns
ns
6
tf(ENDATx_CLK)
Falling time, ENDATx_CLK
1.00
3.00
ns
7
td(ENDATx_OUT-
Delay time, ENDATx_CLK fall to ENDATx_OUT
-10.00
10.00
ns
ENDATx_CLK)
8
9
tr(ENDATx_OUT)
Rising time, ENDATx_OUT
1.00
3.00
tf(ENDATx_OUT)
Falling time, ENDATx_OUT
1.00
3.00
td(ENDATx_OUT_EN-
Delay time, ENDATx_CLK Fall to ENDATx_OUT_EN
-10.00
10.00
ns
ns
ENDATx_CLK)
238
Specifications
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3
2
ENDATx_IN
1
4
5
6
ENDATx_CLK
ENDATx_OUT
8
ENDATx_OUT_EN
9
Figure 5-127. PRU-ICSS ENDAT Timing
5.13.16.2
PRU-ICSS EtherCAT (PRU-ICSS ECAT)
Table 5-109. PRU-ICSS ECAT Timing Conditions
TIMING CONDITION PARAMETER
MIN
MAX
UNIT
Output Condition
Cload
Capacitive load for each bus line
30
pF
5.13.16.2.1 PRU-ICSS ECAT Electrical Data and Timing
Table 5-110. PRU-ICSS ECAT Timing Requirements - Input Validated With LATCH_IN
(see Figure 5-128)
NO.
MIN
MAX
UNIT
1
tw(EDIO_LATCH_IN)
Pulse width, EDIO_LATCH_IN
100.00
2
tr(EDIO_LATCH_IN)
Rising time, EDIO_LATCH_IN
1.00
3.00
ns
3
tf(EDIO_LATCH_IN)
Falling time, EDIO_LATCH_IN
1.00
3.00
ns
4
tsu(EDIO_DATA_IN-
Setup time, EDIO_DATA_IN valid before
EDIO_LATCH_IN active edge
20.00
ns
Hold time, EDIO_DATA_IN valid after EDIO_LATCH_IN
active edge
20.00
ns
EDIO_DATA_IN)
tr(EDIO_DATA_IN)
Rising time, EDIO_DATA_IN
1.00
3.00
tf(EDIO_DATA_IN)
Falling time, EDIO_DATA_IN
1.00
3.00
EDIO_LATCH_IN)
5
6
th(EDIO_LATCH_IN-
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2
3
EDIO_LATCH_IN
1
4
5
EDIO_DATA_IN[7:0]
6
Figure 5-128. PRU-ICSS ECAT Input Validated With LATCH_IN Timing
Table 5-111. PRU-ICSS ECAT Timing Requirements - Input Validated With SYNCx
(see Figure 5-129)
NO.
MIN
MAX
UNIT
1
tw(EDC_SYNCx_OUT)
Pulse width, EDC_SYNCx_OUT
100.00
2
tr(EDC_SYNCx_OUT)
Rising time, EDC_SYNCx_OUT
1.00
3.00
ns
3
tf(EDC_SYNCx_OUT)
Falling time, EDC_SYNCx_OUT
1.00
3.00
ns
4
tsu(EDIO_DATA_IN-
Setup time, EDIO_DATA_IN valid before
EDC_SYNCx_OUT active edge
24.50
ns
Hold time, EDIO_DATA_IN valid after EDC_SYNCx_OUT
active edge
22.00
ns
EDIO_DATA_IN)
tr(EDIO_DATA_IN)
Rising time, EDIO_DATA_IN
1.00
3.00
tf(EDIO_DATA_IN)
Falling time, EDIO_DATA_IN
1.00
3.00
EDC_SYNCx_OUT)
5
6
th(EDC_SYNCx_OUT-
2
ns
ns
3
EDC_SYNCx_OUT
1
4
5
EDIO_DATA_IN[7:0]
6
Figure 5-129. PRU-ICSS ECAT Input Validated With SYNCx Timing
240
Specifications
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Table 5-112. PRU-ICSS ECAT Timing Requirements - Input Validated With Start of Frame (SOF)
(see Figure 5-130)
NO.
MIN
MAX
UNIT
4*P (1)
5*P (1)
ns
Rising time, EDIO_SOF
1.00
3.00
ns
Falling time, EDIO_SOF
1.00
3.00
ns
1
tw(EDIO_SOF)
Pulse duration, EDIO_SOF
2
tr(EDIO_SOF)
3
tf(EDIO_SOF)
4
tsu(EDIO_DATA_IN-
Setup time, EDIO_DATA_IN valid before EDIO_SOF
active edge
EDIO_SOF)
5
th(EDIO_SOF-EDIO_DATA_IN) Hold time, EDIO_DATA_IN valid after EDIO_SOF active
edge
6
(1)
20.00
ns
20.00
ns
tr(EDIO_DATA_IN)
Rising time, EDIO_DATA_IN
1.00
3.00
tf(EDIO_DATA_IN)
Falling time, EDIO_DATA_IN
1.00
3.00
ns
P = PRU-ICSS IEP clock source period.
2
3
EDIO_SOF
1
4
5
EDIO_DATA_IN[7:0]
6
Figure 5-130. PRU-ICSS ECAT Input Validated With SOF
Table 5-113. PRU-ICSS ECAT Timing Requirements - LATCHx_IN
(see Figure 5-131)
NO.
(1)
MIN
3*P
MAX
UNIT
(1)
1
tw(EDC_LATCHx_IN)
Pulse duration, EDC_LATCHx_IN
2
tr(EDC_LATCHx_IN)
Rising time, EDC_LATCHx_IN
1.00
3.00
ns
ns
3
tf(EDC_LATCHx_IN)
Falling time, EDC_LATCHx_IN
1.00
3.00
ns
P = PRU-ICSS IEP clock source period.
2
3
EDC_LATCHx_IN
1
Figure 5-131. PRU-ICSS ECAT LATCHx_IN Timing
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Table 5-114. PRU-ICSS ECAT Switching Requirements - Digital IOs
NO.
MIN
MAX
14*P (1)
32*P (1)
ns
Rising time, EDIO_OUTVALID
1.00
3.00
ns
Falling time, EDIO_OUTVALID
1.00
3.00
ns
Delay time, EDIO_OUTVALID to EDIO_DATA_OUT
0.00
18*P (1)
ns
1
tw(EDIO_OUTVALID)
Pulse duration, EDIO_OUTVALID
2
tr(EDIO_OUTVALID)
3
tf(EDIO_OUTVALID)
4
td(EDIO_OUTVALID-
UNIT
EDIO_DATA_OUT)
5
tr(EDIO_DATA_OUT)
Rising time, EDIO_DATA_OUT
1.00
3.00
ns
6
tf(EDIO_DATA_OUT)
Falling time, EDIO_DATA_OUT
1.00
3.00
ns
7
tsk(EDIO_DATA_OUT)
EDIO_DATA_OUT skew
8.00
ns
(1)
P = PRU-ICSS IEP clock source period.
5.13.16.3 PRU-ICSS MII_RT and Switch
Table 5-115. PRU-ICSS MII_RT Switch Timing Conditions
TIMING CONDITION PARAMETER
MIN
TYP
MAX
UNIT
Input Conditions
tr
Input signal rise time
tf
Input signal fall time
1 (1)
5 (1)
ns
(1)
(1)
ns
20
pF
1
5
Output Condition
CLOAD
(1)
Output load capacitance
Except when specified otherwise.
5.13.16.3.1 PRU-ICSS MDIO Electrical Data and Timing
Table 5-116. PRU-ICSS MDIO Timing Requirements - MDIO_DATA
(see Figure 5-132)
NO.
MIN
1
tsu(MDIO-MDC)
Setup time, MDIO valid before MDC high
2
th(MDIO-MDC)
Hold time, MDIO valid from MDC high
TYP
MAX
UNIT
90
ns
0
ns
1
2
MDIO_CLK (Output)
MDIO_DATA (Input)
Figure 5-132. PRU-ICSS MDIO_DATA Timing - Input Mode
Table 5-117. PRU-ICSS MDIO Switching Characteristics - MDIO_CLK
(see Figure 5-133)
NO.
MIN
TYP
MAX
UNIT
1
tc(MDC)
Cycle time, MDC
400
ns
2
tw(MDCH)
Pulse duration, MDC high
160
ns
3
tw(MDCL)
Pulse duration, MDC low
160
4
tt(MDC)
Transition time, MDC
242
Specifications
ns
5
ns
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4
1
3
2
MDIO_CLK
4
Figure 5-133. PRU-ICSS MDIO_CLK Timing
Table 5-118. PRU-ICSS MDIO Switching Characteristics - MDIO_DATA
(see Figure 5-134)
NO.
1
MIN
td(MDC-MDIO)
Delay time, MDC high to MDIO valid
TYP
10
MAX
UNIT
390
ns
1
MDIO_CLK (Output)
MDIO_DATA (Output)
Figure 5-134. PRU-ICSS MDIO_DATA Timing - Output Mode
5.13.16.3.2 PRU-ICSS MII_RT Electrical Data and Timing
Table 5-119. PRU-ICSS MII_RT Timing Requirements - MII_RXCLK
(see Figure 5-135)
10 Mbps
NO.
MIN
TYP
100 Mbps
MAX
MIN
TYP
MAX
UNIT
1
tc(RX_CLK)
Cycle time, RX_CLK
399.96
400.04
39.996
40.004
ns
2
tw(RX_CLKH)
Pulse Duration, RX_CLK high
140
260
14
26
ns
3
tw(RX_CLKL)
Pulse Duration, RX_CLK low
140
260
14
26
ns
4
tt(RX_CLK)
Transition time, RX_CLK
3
ns
3
4
1
2
3
MII_RXCLK
4
Figure 5-135. PRU-ICSS MII_RXCLK Timing
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Table 5-120. PRU-ICSS MII_RT Timing Requirements - MII[x]_TXCLK
(see Figure 5-136)
10 Mbps
NO.
MIN
100 Mbps
TYP
MAX
MIN
TYP
MAX
UNIT
1
tc(TX_CLK)
Cycle time, TX_CLK
399.96
400.04
39.996
40.004
ns
2
tw(TX_CLKH)
Pulse Duration, TX_CLK high
140
260
14
26
ns
3
tw(TX_CLKL)
Pulse Duration, TX_CLK low
140
260
14
26
ns
4
tt(TX_CLK)
Transition time, TX_CLK
3
ns
3
4
1
3
2
MII_TXCLK
4
Figure 5-136. PRU-ICSS MII_TXCLK Timing
Table 5-121. PRU-ICSS MII_RT Timing Requirements - MII_RXD[3:0], MII_RXDV, and MII_RXER
(see Figure 5-137)
10 Mbps
NO.
1
2
MIN
tsu(RXD-RX_CLK)
Setup time, RXD[3:0] valid before RX_CLK
tsu(RX_DV-RX_CLK)
Setup time, RX_DV valid before RX_CLK
tsu(RX_ER-RX_CLK)
Setup time, RX_ER valid before RX_CLK
th(RX_CLK-RXD)
Hold time RXD[3:0] valid after RX_CLK
th(RX_CLK-RX_DV)
Hold time RX_DV valid after RX_CLK
th(RX_CLK-RX_ER)
Hold time RX_ER valid after RX_CLK
TYP
100 Mbps
MAX
MIN
TYP
MAX
UNIT
8
8
ns
8
8
ns
1
2
MII_MRCLK (Input)
MII_RXD[3:0],
MII_RXDV,
MII_RXER (Inputs)
Figure 5-137. PRU-ICSS MII_RXD[3:0], MII_RXDV, and MII_RXER Timing
244
Specifications
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Table 5-122. PRU-ICSS MII_RT Switching Characteristics - MII_TXD[3:0] and MII_TXEN
(see Figure 5-138)
10 Mbps
NO.
1
MIN
td(TX_CLK-TXD)
Delay time, TX_CLK high to TXD[3:0] valid
td(TX_CLK-TX_EN)
Delay time, TX_CLK to TX_EN valid
TYP
100 Mbps
MAX
MIN
25
5
5
TYP
MAX
UNIT
25
ns
1
MII_TXCLK (input)
MII_TXD[3:0],
MII_TXEN (outputs)
Figure 5-138. PRU-ICSS MII_TXD[3:0], MII_TXEN Timing
5.13.16.4 PRU-ICSS Universal Asynchronous Receiver Transmitter (PRU-ICSS UART)
Table 5-123. Timing Requirements for PRU-ICSS UART Receive
(see Figure 5-139)
NO.
3
(1)
tw(RX)
Pulse width, receive start, stop, data bit
MIN
MAX
0.96U (1)
1.05U (1)
UNIT
ns
U = UART baud time = 1/programmed baud rate.
Table 5-124. Switching Characteristics Over Recommended Operating Conditions for PRU-ICSS UART
Transmit
(see Figure 5-139)
NO.
(1)
1
fbaud(baud)
Maximum programmable baud rate
2
tw(TX)
Pulse width, transmit start, stop, data bit
MIN
MAX
UNIT
0
12
MHz
U - 2 (1)
U + 2 (1)
ns
U = UART baud time = 1/programmed baud rate.
3
2
Start
Bit
UART_TXD
Data Bits
5
4
Start
Bit
UART_RXD
Data Bits
Figure 5-139. PRU-ICSS UART Timing
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5.13.17 Multimedia Card (MMC) Interface
For more information, see the Multimedia Card (MMC) section of the AM437x ARM Cortex-A9
Microprocessors (MPUs) Technical Reference Manual.
5.13.17.1 MMC Electrical Data and Timing
Table 5-125. MMC Timing Conditions
TIMING CONDITION PARAMETER
MIN
TYP
MAX
UNIT
Input Conditions
tr
Input signal rise time
1
5
ns
tf
Input signal fall time
1
5
ns
3
30
pF
Output Condition
Cload
Output load capacitance
Table 5-126. Timing Requirements for MMC[0]_CMD and MMC[0]_DAT[7:0]
(see Figure 5-140)
OPP50/OPP100
NO.
1.8 V
MIN
TYP
3.3 V
MAX
MIN
TYP
UNIT
MAX
1
tsu(CMDV-CLKH)
Setup time, MMC_CMD valid before
MMC_CLK rising clock edge
4.1
4.1
ns
2
th(CLKH-CMDV)
Hold time, MMC_CMD valid after
MMC_CLK rising clock edge
1.5
1.5
ns
3
tsu(DATV-CLKH)
Setup time, MMC_DATx valid before
MMC_CLK rising clock edge
4.1
4.1
ns
4
th(CLKH-DATV)
Hold time, MMC_DATx valid after
MMC_CLK rising clock edge
1.5
1.5
ns
Table 5-127. Timing Requirements for MMC[1/2]_CMD and MMC[1/2]_DAT[7:0]
(see Figure 5-140)
OPP50/OPP100
NO.
1.8 V
MIN
1
tsu(CMDV-CLKH)
Setup time, MMC_CMD valid before
MMC_CLK rising clock edge
2
th(CLKH-CMDV)
Hold time, MMC_CMD valid after
MMC_CLK rising clock edge
3
tsu(DATV-CLKH)
Setup time, MMC_DATx valid before
MMC_CLK rising clock edge
4
th(CLKH-DATV)
Hold time, MMC_DATx valid after
MMC_CLK rising clock edge
246
Specifications
TYP
3.3 V
MAX
MIN
TYP
UNIT
MAX
4.1
4.1
ns
2.55
3.76
ns
4.1
4.1
ns
2.55
3.76
ns
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1
2
MMC[x]_CLK (Output)
MMC[x]_CMD (Input)
MMC[x]_DAT[7:0] (Inputs)
3
4
Figure 5-140. MMC[x]_CMD and MMC[x]_DAT[7:0] Input Timing
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Table 5-128. Switching Characteristics for MMC[x]_CLK
(see Figure 5-141)
NO.
5
STANDARD MODE
PARAMETER
MIN TYP
fop(CLK)
Operating frequency, MMC_CLK
tcop(CLK)
Operating period: MMC_CLK
fid(CLK)
Identification mode frequency, MMC_CLK
tcid(CLK)
Identification mode period: MMC_CLK
HIGH-SPEED MODE
MAX
MIN TYP
MAX
24
UNIT
48 MHz
41.7
20.8
ns
400
400
kHz
2500
2500
ns
tf(CLK)(1)
tr(CLK)(1)
tf(CLK)(1)
tr(CLK)(1)
ns
6
tw(CLKL)
Pulse duration, MMC_CLK low
(0.5*P) -
7
tw(CLKH)
Pulse duration, MMC_CLK high
(0.5*P) -
(0.5*P) -
8
tr(CLK)
Rise time, All Signals (10% to 90%)
2.2
2.2
ns
9
tf(CLK)
Fall time, All Signals (10% to 90%)
2.2
2.2
ns
(0.5*P) -
ns
(1) P = MMC_CLK period.
5
6
7
8
9
MMC[x]_CLK (Output)
Figure 5-141. MMC[x]_CLK Timing
Table 5-129. Switching Characteristics for MMC[x]_CMD and MMC[x]_DAT[7:0]—HSPE=0
(see Figure 5-142)
OPP50/OPP100
NO.
PARAMETER
1.8 V
MIN
3.3 V
TYP
MAX
MIN
TYP
UNIT
MAX
10
td(CLKL-CMD)
Delay time, MMC_CLK falling clock
edge to MMC_CMD transition
-4
14
-4
17.5
ns
11
td(CLKL-DAT)
Delay time, MMC_CLK falling clock
edge to MMC_DATx transition
-4
14
-4
17.5
ns
10
MMC[x]_CLK (Output)
MMC[x]_CMD (Output)
MMC[x]_DAT[7:0] (Outputs)
11
Figure 5-142. MMC[x]_CMD and MMC[x]_DAT[7:0] Output Timing—HSPE=0
248
Specifications
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Table 5-130. Switching Characteristics for MMC[x]_CMD and MMC[x]_DAT[7:0]—HSPE=1
(see Figure 5-143)
OPP50/OPP100
NO.
PARAMETER
1.8 V
MIN
3.3 V
TYP
MAX
MIN
TYP
MAX
UNIT
12
td(CLKL-CMD)
Delay time, MMC_CLK rising clock
edge to MMC_CMD transition
0.8
7.4
0.8
7.4
ns
13
td(CLKL-DAT)
Delay time, MMC_CLK rising clock
edge to MMC_DATx transition
0.8
7.4
0.8
7.4
ns
12
MMC[x]_CLK (Output)
MMC[x]_CMD (Output)
MMC[x]_DAT[7:0] (Outputs)
13
Figure 5-143. MMC[x]_CMD and MMC[x]_DAT[7:0] Output Timing—HSPE=1
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5.13.18 Universal Asynchronous Receiver/Transmitter (UART)
For more information, see the Universal Asynchronous Receiver/Transmitter (UART) section of the
AM437x ARM Cortex-A9 Microprocessors (MPUs) Technical Reference Manual.
5.13.18.1 UART Electrical Data and Timing
Table 5-131. Timing Requirements for UARTx Receive
(see Figure 5-144)
NO.
3
tw(RX)
Pulse width, receive start, stop, data bit
MIN
MAX
0.96U(1)
1.05U(1)
UNIT
ns
(1) U = UART baud time = 1/programmed baud rate.
Table 5-132. Switching Characteristics for UARTx Transmit
(see Figure 5-144)
NO.
PARAMETER
MIN
1
fbaud(baud)
Maximum programmable baud rate
2
tw(TX)
Pulse width, transmit start, stop, data bit
U - 2(1)
MAX
UNIT
3.6864
MHz
U + 2(1)
ns
(1) U = UART baud time = 1/programmed baud rate.
2
2
2
UARTx_TXD
Start
Bit
Stop Bit
Data Bits
3
3
UARTx_RXD
Start
Bit
3
Stop Bit
Data Bits
Figure 5-144. UART Timings
250
Specifications
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5.13.18.2 UART IrDA Interface
The IrDA module operates in three different modes:
• Slow infrared (SIR) (≤ 115.2 kbps)
• Medium infrared (MIR) (0.576 Mbps and 1.152 Mbps)
• Fast infrared (FIR) (4 Mbps).
Figure 5-145 shows the UART IrDA pulse parameters. Table 5-133 and Table 5-134 list the signaling
rates and pulse durations for UART IrDA receive and transmit modes.
Pulse Duration
50%
Pulse Duration
50%
50%
Figure 5-145. UART IrDA Pulse Parameters
Table 5-133. UART IrDA—Signaling Rate and Pulse Duration—Receive Mode
ELECTRICAL PULSE DURATION
SIGNALING RATE
UNIT
MIN
MAX
2.4 kbps
1.41
88.55
µs
9.6 kbps
1.41
22.13
µs
19.2 kbps
1.41
11.07
µs
38.4 kbps
1.41
5.96
µs
57.6 kbps
1.41
4.34
µs
115.2 kbps
1.41
2.23
µs
0.576 Mbps
297.2
518.8
ns
1.152 Mbps
149.6
258.4
ns
4 Mbps (Single pulse)
67
164
ns
4 Mbps (Double pulse)
190
289
ns
SIR
MIR
FIR
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Table 5-134. UART IrDA—Signaling Rate and Pulse Duration—Transmit Mode
SIGNALING RATE
ELECTRICAL PULSE DURATION
UNIT
MIN
MAX
2.4 kbps
78.1
78.1
µs
9.6 kbps
19.5
19.5
µs
19.2 kbps
9.75
9.75
µs
38.4 kbps
4.87
4.87
µs
57.6 kbps
3.25
3.25
µs
115.2 kbps
1.62
1.62
µs
0.576 Mbps
414
419
ns
1.152 Mbps
206
211
ns
4 Mbps (Single pulse)
123
128
ns
4 Mbps (Double pulse)
248
253
ns
SIR
MIR
FIR
252
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5.14 Emulation and Debug
5.14.1 IEEE 1149.1 JTAG
5.14.1.1 JTAG Electrical Data and Timing
Table 5-135. Timing Requirements for JTAG
(see Figure 5-146)
OPP100
NO.
MIN
OPP50
MAX
MIN
MAX
UNIT
1
tc(TCK)
Cycle time, TCK
60
60
ns
1a
tw(TCKH)
Pulse duration, TCK high (40% of tc)
24
24
ns
1b
tw(TCKL)
Pulse duration, TCK low (40% of tc)
24
24
ns
tsu(TDI-TCKH)
Input setup time, TDI valid to TCK high
3
3
ns
tsu(TMS-TCKH)
Input setup time, TMS valid to TCK high
3
3
ns
th(TCKH-TDI)
Input hold time, TDI valid from TCK high
8
8
ns
th(TCKH-TMS)
Input hold time, TMS valid from TCK high
8
8
ns
3
4
Table 5-136. Switching Characteristics for JTAG
(see Figure 5-146)
NO.
2
OPP100
PARAMETER
td(TCKL-TDO)
Delay time, TCK low to TDO valid
OPP50
MIN
MAX
MIN
MAX
0
23
0
23
UNIT
ns
1
1a
1b
TCK
2
TDO
3
4
TDI/TMS
Figure 5-146. JTAG Timing
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6 Device and Documentation Support
6.1
Device Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to the part numbers of all
processors and support tools. Each device has one of three prefixes: X, P, or null (no prefix) (for example,
XAM4379xZDN). Texas Instruments recommends two of three possible prefix designators for its support
tools: TMDX and TMDS. These prefixes represent evolutionary stages of product development from
engineering prototypes (TMDX) through fully qualified production devices and tools (TMDS).
Device development evolutionary flow:
X
Experimental device that is not necessarily representative of the final device's electrical
specifications and may not use production assembly flow.
P
Prototype device that is not necessarily the final silicon die and may not necessarily meet
final electrical specifications.
null
Production version of the silicon die that is fully qualified.
Support tool development evolutionary flow:
TMDX
Development-support product that has not yet completed Texas Instruments internal
qualification testing.
TMDS
Fully-qualified development-support product.
X and P devices and TMDX development-support tools are shipped against the following disclaimer:
"Developmental product is intended for internal evaluation purposes."
Production devices and TMDS development-support tools have been characterized fully, and the quality
and reliability of the device have been demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system
because their expected end-use failure rate still is undefined. Only qualified production devices are to be
used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the
package type (for example, ZDN), the temperature range (for example, blank is the default commercial
temperature range), and the device speed range, in megahertz (for example, 80 is 800 MHz). Figure 6-1
provides a legend for reading the complete device name for any device.
For orderable part numbers of AM437x devices in the ZDN package type, see the Package Option
Addendum of this document, the TI website, or contact your TI sales representative.
For additional description of the device nomenclature markings on the die, see the Sitara AM437x CortexA9 Processors Silicon ErrataSitara Cortex-A9 Processors Silicon Errata.
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X
AM4379
A
ZDN
(
)
(
)
S
PREFIX
X = Experimental device
Blank = Qualified device
SUFFIX
Blank = Only Public Boot Supported
S = High-Security (AM437xHS) device, Secure Boot Supported
(A)
DEVICE SPEED RANGE
30 = 300-MHZ Cortex-A9
80 = 800-MHz Cortex-A9
100 = 1000-MHz Cortex-A9
DEVICE
ARM Cortex-A9 MPU:
AM4376
AM4377
AM4378
AM4379
TEMPERATURE RANGE
Blank = 0°C to 90°C (commercial junction temperature)
A = -40°C to 105°C (extended junction temperature)
D = -40°C to 90°C (industrial junction temperature)
DEVICE REVISION CODE
A = silicon revision 1.1
B = silicon revision 1.2
A.
B.
(B)
PACKAGE TYPE
ZDN = 491-pin plastic BGA, with Pb-free solder balls
The device shown in this device nomenclature example is one of several valid part numbers for this family of devices.
For orderable device part numbers, see the Package Option Addendum of this document.
BGA = Ball Grid Array.
Figure 6-1. Device Nomenclature
6.2
Tools and Software
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the
device, generate code, and develop solutions are listed below.
Models
AM437x BSDL Model ZDN package BSDL model.
AM437x IBIS Model ZDN package IBIS model.
Design Kits and Evaluation Modules
AM437x Evaluation Module Enables developers to immediately start evaluating the AM437x processor
family (AM4376, AM4377, AM4378 and AM4379 ) and begin building applications such as
portable navigation, patient monitoring, home/building automation, barcode scanners,
portable data terminals and others.
AM437x Industrial Development Kit (IDK) An application development platform for evaluating the
industrial communication and control capabilities of Sitara AM4379 and AM4377 processors
for industrial applications.
AM437x Starter Kit Provides a stable and affordable platform to quickly start evaluation of Sitara ARM
Cortex-A9 AM437x Processors (AM4376, AM4378) and accelerate development for HMI,
industrial and networking applications. It is a low-cost development platform based on the
ARM Cortex-A9 processor that is integrated with options such as Dual Gigabit Ethernet,
DDR3L, Camera and Capacitive Touch Screen LCD.
TI PRU Cape A BeagleBone Black add-on board that allows users get to know TI’s powerful
Programmable Real-Time Unit (PRU) core and basic functionality. The PRU is a low-latency
microcontroller subsystem integrated in the Sitara AM335x and AM437x family of devices.
TI Designs
ARM MPU with Integrated BiSS C Master Interface Reference Design Impelementation of BiSS C
Master protocol on Industrial Communication Sub-System (PRU-ICSS). The design provides
full documentation and source code for Programmable Realtime Unit (PRU).
Sercos III Slave For AM437x Communication Development Platform Reference Design
Combines
the AM437x Sitara processor family from Texas Instruments (TI) and the Sercos III media
access control (MAC) layer into a single system-on-chip (SoC) solution. Targeted for Sercos
III slave communications, the TIDEP0039 allows designers to implement the real-time
Sercos III communication standard for a broad range of industrial automation equipment.
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EnDat 2.2 System Reference Design Implements the EnDat 2.2 Master protocol stack and hardware
interface solution based on the HEIDENHAIN EnDat 2.2 standard for position or rotary
encoders. The design is composed of the EnDat 2.2 Master protocol stack, half-duplex
communications using RS485 transceivers and the line termination implemented on the
Sitara AM437x Industrial Development Kit.
Acontis EtherCAT Master Stack Reference Design A highly portable software stack that can be used
on various embedded platforms. The EC-Master supports the high performane TI Sitara
MPUs, it provides a sophisticated EtherCAT Master solution which customers can use to
implement EtherCAT communication interface boards, EtherCAT based PLC or motion
control applications.
SPI Master with Signal Path Delay Compensation Reference Design Describes the implementation of
the SPI master protocol with signal path delay compensation on PRU-ICSS. It supports the
32-bit communication protocol of ADS8688 with a SPI clock frequency of up to 16.7MHz.
Isolated Current Shunt and Voltage Measurement Reference Design for Motor Drives Using
AM437x
Uses the AMC130x reinforced isolated delta-sigma modulators along with AM437x Sitara
ARM Cortex-A9 Processor, which implements Sinc filters on PRU-ICSS. The design
provides an ability to evaluate the performance of these measurements: three motor
currents, three inverter voltages, and the DC Link voltage.
Single Chip Drive for Industrial Communications and Motor Control Implements a hardware interface
solution based on the HEIDENHAIN EnDat 2.2 standard for position or rotary encoders. The
platform also allows designers to implement real-time EtherCAT communications standards
in a broad range of industrial automation equipment.
AM437x Low Power Suspend Mode with LPDDR2 Realizes processor power consumption less than 0.1
mW while keeping LPDDR2 memory in self refresh consuming ~ 1.6 mW. The system
solution is comprised of AM437x Sitara processor, LPDDR2 memory and TPS65218 power
management IC and optimized for new low power mode along with support for legacy low
power modes.
AM437x Discrete Power Reference Design Provides flexibility to power designers. This reference
design implementation is a BOM-optimized discrete power solution for the AM437x
processor with a minimal number of discrete ICs and basic feature set. T
Embedded USB 2.0 Reference Design The USB 2.0 reference design guidelines are extremely
important for designers considering USB2.0 electrical compliance testing. The guidelines are
applicable to AM335x and AM437x but also generic to other processors. The approach taken
for these guidelines is highly practical, without complex formulas or theory.
ARM MPU with Integrated HIPERFACE DSL Master Interface Reference Design Implementation of
HIPERFACE DSL Master protocol on Industrial Communication Sub-System (PRU-ICSS).
The two wire interface allows for integration of position feedback wires into motor cable.
Complete solution consists of AM437x PRU-ICSS firmware and TIDA-00177 transceiver
reference design.
Software
Processor SDK for AM437X Sitara Processors - Linux and TI-RTOS Support A unified software
platform for TI embedded processors providing easy setup and fast out-of-the-box access to
benchmarks and demos. All releases of Processor SDK are consistent across TI’s broad
portfolio, allowing developers to seamlessly reuse and migrate software across devices.
Programmable Real-time Unit (PRU) Software Support Package An add-on package that provides a
framework and examples for developing software for the Programmable Real-time Unit subsystem and Industrial Communication Sub-System (PRU-ICSS) in the supported TI
processors.
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SYS/BIOS Industrial Software Development Kit (SDK) for Sitara Processors Gives customers the
ability to easily add real-time industrial communications to their design so they can focus on
differentiating their application code.
TI Dual-Mode Bluetooth® Stack Comprised of Single-Mode and Dual-Mode offerings implementing the
Bluetooth 4.0 specification. The Bluetooth stack is fully Bluetooth Special Interest Group
(SIG) qualified, certified and royalty-free, provides simple command line sample applications
to speed development, and upon request has MFI capability.
Development Tools
Clock Tree Tool for Sitara ARM Processors Interactive clock tree configuration software that provides
information about the clocks and modules in Sitara devices.
Pin Mux Tool Provides a Graphical User Interface for configuring pin multiplexing settings, resolving
conflicts and specifying I/O cell characteristics for TI MPUs. Results are output as C
header/code files that can be imported into software development kits (SDK) or used to
configure customer's custom software. Version 3 of the Pin Mux utility adds the capability of
automatically selecting a mux configuration that satisfies the entered requirements.
Power Estimation Tool (PET) Provides users the ability to gain insight in to the power consumption of
select TI processors. The tool includes the ability for the user to choose multiple application
scenarios and understand the power consumption as well as how advanced power saving
techniques can be applied to further reduce overall power consumption.
XDS200 USB Debug Probe Connects to the target board via a TI 20-pin connector (with multiple
adapters for TI 14-pin, ARM 10-pin and ARM 20-pin) and to the host PC via USB2.0 High
Speed (480Mbps). It also requires a license of Code Composer Studio IDE running on the
host PC.
XDS560v2 System Trace USB and Ethernet Debug Probe Adds system pin trace in its large external
memory buffer. Available for selected TI devices, this external memory buffer captures
device-level information that allows obtaining accurate bus performance activity and
throughput, as well as power management of core and peripherals. Also, all XDS debug
probes support Core and System Trace in all ARM and DSP processors that feature an
Embedded Trace Buffer (ETB).
XDS560v2 System Trace USB Debug Probe Adds system pin trace in its large external memory buffer.
Available for selected TI devices, this external memory buffer captures device-level
information that allows obtaining accurate bus performance activity and throughput, as well
as power management of core and peripherals. Also, all XDS debug probes support Core
and System Trace in all ARM and DSP processors that feature an Embedded Trace Buffer
(ETB).
6.3
6.3.1
Documentation Support
Receiving Notification of Documentation Updates
To receive notification of documentation updates—including silicon errata—go to the product folder for
your device on ti.com (AM3359, AM3358, AM3357, AM3356, AM3354, AM3352, AM3351). In the upper
right corner, click the "Alert me" button. This registers you to receive a weekly digest of product
information that has changed (if any). For change details, check the revision history of any revised
document.
The current documentation that describes the processor, related peripherals, and other technical collateral
is listed below.
Errata
AM437x Sitara Processors Silicon Errata
Describes
specifications for this microprocessor.
the
known
exceptions
to
the
functional
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Application Reports
High-Speed Interface Layout Guidelines As modern bus interface frequencies scale higher, care must
be taken in the printed circuit board (PCB) layout phase of a design to ensure a robust
solution.
User's Guides
AM437x Sitara Processors Technical Reference Manual Collection of documents providing detailed
information on the device including power, reset, and clock control, interrupts, memory map,
and switch fabric interconnect. Detailed information on the microprocessor unit (MPU)
subsystem as well as a functional description of the peripherals supported is also included.
Discrete Power Solution for AM437x Details the implementation of a BOM-optimized discrete power
solution for the AM437x processor with a minimal number of discrete ICs and basic feature
set. The solution represents a baseline for a discrete power solution that can be extended for
additional features of the AM437x processor.
Powering the AM335x/AM437x with TPS65218 A reference for connectivity between the TPS65218
power management IC and the AM335x or AM437x processor.
AM437x GP EVM Hardware User's Guide Describes the hardware architecture of the AM437x
Evaluation Module (EVM) (part number TMDXEVM437X), which is based on the Texas
Instruments (TI) AM437x processor. This EVM is also commonly known as the AM437x
General Purpose (GP) EVM.
White Papers
Highly Integrated industrial Drive to Connect, Control and Communicate Discusses the overall drive
architecture with emphasis on the highly integrated industrial drive solution by Texas
Instruments.
Ensuring Real-Time Predictability High-performance processors like ARM Cortex-A cores have an
entirely different set of resources and pro- cessing capabilities than those of real-time
processing cores, like the Programmable Real-Time Unit (PRU) coprocessor in TI’s Sitara
processors.
Mainline Linux Ensures Stability and Innovation Enabling and empowering the rapid development of
new functionality starts at the foundational level of the system’s software environment – that
is, at the level of the Linux kernel – and builds upward from there.
Scalable Solutions for HMI A well designed HMI system decreases that gap between the production
process and operator through an intuitive visualization system, layers of detail to allow for a
bird’s eye view down to the minute details, as well as training material and documentation at
the operators’ fingertips.
Linaro Speeds Development in TI Linux SDKs Linaro’s software is not a Linux distribution; in fact, it is
distribution neutral. The focus of the organization’s 120 engineers is on optimizing base-level
open-source software in areas that interact directly with the silicon such as multimedia,
graphics, power management, the Linux kernel and booting processes.
Getting Started on TI ARM Embedded Processor Development Beginning with an overview of ARM
technology and available processor platforms, this paper will then explore the fundamentals
of embedded design that influence a system’s architecture and, consequently, impact
processor selection.
The Yocto Project: Changing the Way Embedded Linux Software Solutions are Developed Enabling
complex silicon devices such as SoC with operating firmware and application software can
be a challenge for equipment manufacturers who often are more comfortable with hardware
than software issues.
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Other Documents
Sitara AM437x Processor With ARM Cortex-A9 Core TI continues to optimize and expand its portfolio
of Sitara processor solutions for the embedded market. With the Sitara AM437x processors
support for the ARM Cortex-A9 core, extending performance by up to 40 percent over the
current Sitara AM335x processor line.
Sitara Processors Using the ARM Cortex-A series of cores, are optimized system solutions that go
beyond the core, delivering products that support rich graphics capabilities, LCD displays
and multiple industrial protocols.
AM437x Evaluation Module Quick Start Guide Designed to help you through the initial setup of the
EVM. This EVM allows you to experience Linux and other operating systems (OSs) that
showcase the AM437x Cortex-A9 processor, 3D graphics and more.
The following documents are related to the processor. Copies of these documents can be obtained
directly from the internet or from your Texas Instruments representative. To determine the revision of the
Cortex-A9 core used on your device, see the device-specific errata.
Cortex-A9 Technical Reference Manual Technical reference manual for the Cortex-A9 processor.
ARM Core Cortex-A9 (AT400/AT401) Errata Notice Provides a list of advisories for the different
revisions of the Cortex-A9 processor. For a copy of this document, contact your TI
representative.
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6.4
www.ti.com
Related Links
Table 6-1 lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 6-1. Related Links
6.5
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
AM4376
Click here
Click here
Click here
Click here
Click here
AM4377
Click here
Click here
Click here
Click here
Click here
AM4378
Click here
Click here
Click here
Click here
Click here
AM4379
Click here
Click here
Click here
Click here
Click here
Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the
respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;
see TI's Terms of Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster
collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,
explore ideas and help solve problems with fellow engineers.
TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help
developers get started with Embedded Processors from Texas Instruments and to foster
innovation and growth of general knowledge about the hardware and software surrounding
these devices.
6.6
Trademarks
Sitara, E2E are trademarks of Texas Instruments.
NEON is a trademark of ARM Ltd or its subsidiaries.
ARM, Cortex are registered trademarks of ARM Ltd or its subsidiaries.
Bluetooth is a registered trademark of Bluetooth SIG.
EtherCAT is a registered trademark of EtherCAT Technology Group.
PowerVR SGX is a trademark of Imagination Technologies Limited.
Linux is a registered trademark of Linus Torvalds.
1-Wire is a registered trademark of Maxim Integrated Products, Inc.
EtherNet/IP is a trademark of ODVA, Inc.
PROFIBUS, PROFINET are registered trademarks of PROFIBUS & PROFINET International (PI).
All other trademarks are the property of their respective owners.
6.7
Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
6.8
Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
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7 Mechanical, Packaging, and Orderable Information
7.1
Via Channel
The ZDN package has been specially engineered with Via Channel technology. This technology allows
larger than normal PCB via and trace sizes and reduced PCB signal layers to be used in a PCB design
with the 0.65-mm pitch package, and substantially reduces PCB costs. It allows PCB routing in only two
signal layers (four layers total) due to the increased layer efficiency of the Via Channel BGA technology.
NOTE
Via Channel technology implemented on the this package makes it possible to build a
product with a 4-layer PCB, but a 4-layer PCB may not meet system performance goals.
Therefore, system performance using a 4-layer PCB design must be evaluated during
product design.
7.2
Packaging Information
The following packaging information and addendum reflect the most current data available for the
designated device. This data is subject to change without notice and without revision of this document.
The following figure is a preliminary package drawing for the ZDN package option.
Note: The ZDN package is shown with a 17-mm × 17-mm array of 491 solder balls with 0.65-mm pitch,
with via channel array (VCA) technology.
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PACKAGE OPTION ADDENDUM
www.ti.com
2-Jun-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
AM4376BZDN100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
0 to 90
AM4376BZDN100
AM4376BZDN80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
0 to 90
AM4376BZDN80
AM4376BZDNA100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4376BZDNA100
AM4376BZDNA80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4376BZDNA80
AM4376BZDND100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 90
AM4376BZDND100
AM4376BZDND30
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 90
AM4376BZDND30
AM4376BZDND80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 90
AM4376BZDND80
AM4377BZDNA100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4377BZDNA100
AM4377BZDNA80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4377BZDNA80
AM4377BZDND100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 90
AM4377BZDND100
AM4377BZDND80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 90
AM4377BZDND80
AM4378BZDN100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
0 to 90
AM4378BZDN100
AM4378BZDN80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
0 to 90
AM4378BZDN80
AM4378BZDNA100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4378BZDNA100
AM4378BZDNA80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4378BZDNA80
AM4378BZDND100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 90
AM4378BZDND100
AM4378BZDND80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 90
AM4378BZDND80
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
2-Jun-2016
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
AM4379BZDNA100
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4379BZDNA100
AM4379BZDNA80
ACTIVE
NFBGA
ZDN
491
90
Green (RoHS
& no Sb/Br)
SNAGCU
Level-3-260C-168 HR
-40 to 105
AM4379BZDNA80
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
2-Jun-2016
Addendum-Page 3
IMPORTANT NOTICE
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